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1. 发明授权

US06876009B2 Nitride semiconductor device and a process of manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US06876009B2
公开(公告)日：2005-04-05
申请号：US10314444
申请日：2002-12-09
申请人： Yukio Narukawa , Isamu Niki , Axel Scherer , Koichi Okamoto , Yoichi Kawakami , Mitsuru Funato , Shigeo Fujita
发明人： Yukio Narukawa , Isamu Niki , Axel Scherer , Koichi Okamoto , Yoichi Kawakami , Mitsuru Funato , Shigeo Fujita
IPC分类号： H01L21/20 , H01L33/24 , H01L33/32 , H01S5/323 , H01L31/0328
CPC分类号： H01L33/24 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/32
摘要： The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.
摘要翻译：包含形成在不同基板上的氮化镓系半导体层的氮化物半导体器件的发光效率提高。形成在基板上的缓冲层形成在其间的n型层包括沿纵向观察的凹凸部的一部分。有源层形成在凸起的至少两个侧面上，凹部位于它们之间。在凹部内形成p型层。绝缘层形成在突起的顶面上，在凹部的底面上。 n型层设置有n电极，而p型层设置有p电极接触层。从形成在氮化镓系半导体层的凹部内的p型层观察，有源层和n型层位于彼此相反的关系。从凹部的侧面观察，在n型层上形成有源层和p型层。

2. 发明授权

US07348600B2 Nitride semiconductor device, and its fabrication process 有权
标题翻译：氮化物半导体器件及其制造工艺
公开(公告)号：US07348600B2
公开(公告)日：2008-03-25
申请号：US10687768
申请日：2003-10-20
申请人： Yukio Narukawa , Isamu Niki , Axel Scherer , Koichi Okamoto , Yoichi Kawakami , Mitsuru Funato , Shigeo Fujita
发明人： Yukio Narukawa , Isamu Niki , Axel Scherer , Koichi Okamoto , Yoichi Kawakami , Mitsuru Funato , Shigeo Fujita
IPC分类号： H01L21/15
CPC分类号： H01L33/24 , B82Y20/00 , H01S5/0213 , H01S5/3202 , H01S5/3203 , H01S5/34333 , H01S2304/12
摘要： The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.
摘要翻译：本发明提供了一种氮化物半导体发光器件，其包括形成在异质衬底上的氮化镓半导体层，其中具有不同发光波长或不同颜色的发光具有相同的有源层。凹槽106通过在衬底上形成的第一导电（n）型半导体层102中蚀刻形成，其中缓冲层位于它们之间。每个凹槽以与主C平面不同的平面取向曝光。例如，A平面的平面取向被暴露。活性层生长并在该平面取向的平面上，在凹部的底部和非凹部的C面上表面上接合。第二导电（p）型半导体层形成在凹部的内表面上。由于活性层以两个或多个平面取向与半导体层连续形成，所以生长速率差导致量子阱（有源层）上的厚度差异，发出具有不同发光波长峰值或不同的发光波长峰值颜色。

3. 发明申请

US20050082544A1 Nitride semiconductor device, and its fabrication process 有权
标题翻译：氮化物半导体器件及其制造工艺
公开(公告)号：US20050082544A1
公开(公告)日：2005-04-21
申请号：US10687768
申请日：2003-10-20
申请人： Yukio Narukawa , Isamu Niki , Axel Scherer , Koichi Okamoto , Yoichi Kawakami , Mitsuru Funato , Shigeo Fujita
发明人： Yukio Narukawa , Isamu Niki , Axel Scherer , Koichi Okamoto , Yoichi Kawakami , Mitsuru Funato , Shigeo Fujita
IPC分类号： H01L27/15 , H01L33/24 , H01S5/02 , H01S5/32 , H01S5/343
CPC分类号： H01L33/24 , B82Y20/00 , H01S5/0213 , H01S5/3202 , H01S5/3203 , H01S5/34333 , H01S2304/12
摘要： The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.
摘要翻译：本发明提供了一种氮化物半导体发光器件，其包括形成在异质衬底上的氮化镓半导体层，其中具有不同发光波长或不同颜色的发光具有相同的有源层。凹槽106通过在衬底上形成的第一导电（n）型半导体层102中蚀刻形成，其中缓冲层位于它们之间。每个凹槽以与主C平面不同的平面取向曝光。例如，A平面的平面取向被暴露。活性层生长并在该平面取向的平面上，在凹部的底部和非凹部的C面上表面上接合。第二导电（p）型半导体层形成在凹部的内表面上。由于活性层以两个或多个平面取向与半导体层连续形成，所以生长速率差导致量子阱（有源层）上的厚度差异，发出具有不同发光波长峰值或不同的发光波长峰值颜色。

4. 发明申请

US20060158089A1 Fluorescent material and light-emitting apparatus employing the same 有权
标题翻译：荧光材料和采用该荧光材料的发光装置
公开(公告)号：US20060158089A1
公开(公告)日：2006-07-20
申请号：US11224131
申请日：2005-09-13
申请人： Hajime Saito , Tatsuya Morioka , Shizuo Fujita , Yoichi Kawakami , Mitsuru Funato , Masafumi Harada , Shigeo Fujita
发明人： Hajime Saito , Tatsuya Morioka , Shizuo Fujita , Yoichi Kawakami , Mitsuru Funato , Masafumi Harada , Shigeo Fujita
IPC分类号： H01J29/10
CPC分类号： C09K11/02 , C09K11/62 , H01L33/502 , H01L2924/0002 , H01S5/005 , H01S5/02244 , Y02B20/181 , Y10S977/774 , H01L2924/00
摘要： A fluorescent material excellent in emission efficiency in white emission and a light-emitting apparatus employing this fluorescent material and having excellent color rendering are provided with a fluorescent material comprising a two-layer structure of a core of a particle size having a quantum effect and a shell covering this core in which the ground state energy of the core is in the range of 1.85 to 2.05 eV, the high order energy of the core is not in the ranges of 2.3 to 2.5 eV and 2.65 to 2.8 eV, or the ground state energy of the core is in the range of 2.3 to 2.5 eV, the high order energy of the core is not in the range of 2.65 to 2.8 eV an light-emitting apparatus employing these fluorescent materials.
摘要翻译：提供了白色发光中发光效率优异的荧光材料和采用该荧光材料并且具有优异显色性的发光装置，具有包含具有量子效应的粒径的核心的二层结构的荧光材料和壳体覆盖该核心，其中核的基态能量在1.85至2.05eV的范围内，芯的高阶能量不在2.3至2.5eV和2.65至2.8eV的范围内，或基态芯的能量在2.3至2.5eV的范围内，使用这些荧光材料的发光装置的芯的高阶能量不在2.65至2.8eV的范围内。

5. 发明授权

US07560859B2 Fluorescent material having two layer structure and light emitting apparatus employing the same 有权
标题翻译：具有两层结构的荧光材料和采用该荧光材料的发光装置
公开(公告)号：US07560859B2
公开(公告)日：2009-07-14
申请号：US11224131
申请日：2005-09-13
申请人： Hajime Saito , Tatsuya Morioka , Shizuo Fujita , Yoichi Kawakami , Mitsuru Funato , Masafumi Harada , Kyoko Fujita, legal representative
发明人： Shigeo Fujita
IPC分类号： H01J1/62 , C09K11/77
CPC分类号： C09K11/02 , C09K11/62 , H01L33/502 , H01L2924/0002 , H01S5/005 , H01S5/02244 , Y02B20/181 , Y10S977/774 , H01L2924/00
摘要： A fluorescent material excellent in emission efficiency in white emission and a light-emitting apparatus employing this fluorescent material and having excellent color rendering are provided with a fluorescent material comprising a two-layer structure of a core of a particle size having a quantum effect and a shell covering this core in which the ground state energy of the core is in the range of 1.85 to 2.05 eV, the high order energy of the core is not in the ranges of 2.3 to 2.5 eV and 2.65 to 2.8 eV, or the ground state energy of the core is in the range of 2.3 to 2.5 eV, the high order energy of the core is not in the range of 2.65 to 2.8 eV an light-emitting apparatus employing these fluorescent materials.
摘要翻译：提供了白色发光中发光效率优异的荧光材料和采用该荧光材料并且具有优异显色性的发光装置，具有包含具有量子效应的粒径的核心的二层结构的荧光材料和壳体覆盖该核心，其中核的基态能量在1.85至2.05eV的范围内，芯的高阶能量不在2.3至2.5eV和2.65至2.8eV的范围内，或基态芯的能量在2.3至2.5eV的范围内，使用这些荧光材料的发光装置的芯的高阶能量不在2.65至2.8eV的范围内。

6. 发明授权

US08287760B2 Light-emitting apparatus, phosphorescent portion, and method of producing the same 有权
标题翻译：发光装置，磷光部分及其制造方法
公开(公告)号：US08287760B2
公开(公告)日：2012-10-16
申请号：US12710105
申请日：2010-02-22
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： F21K2/00
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译：由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

7. 发明申请

US20060187994A1 Light-emitting apparatus, phosphor, and method of producing it 审中-公开
标题翻译：发光装置，荧光体及其制造方法
公开(公告)号：US20060187994A1
公开(公告)日：2006-08-24
申请号：US11402926
申请日：2006-04-13
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： H01S3/09
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译：由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

8. 发明授权

US07700001B2 Light-emitting apparatus, phosphor and method of producing it 有权
标题翻译：发光装置，荧光体及其制造方法
公开(公告)号：US07700001B2
公开(公告)日：2010-04-20
申请号：US12073794
申请日：2008-03-10
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： C09K11/02 , C09K11/62
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译：由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

9. 发明申请

US20080217579A1 Light-emitting apparatus, phosphor and method of producing it 有权
标题翻译：发光装置，荧光体及其制造方法
公开(公告)号：US20080217579A1
公开(公告)日：2008-09-11
申请号：US12073794
申请日：2008-03-10
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： C09K11/62
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译：由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

10. 发明授权

US06554444B2 Gazing point illuminating device 失效
标题翻译：凝视点照明装置
公开(公告)号：US06554444B2
公开(公告)日：2003-04-29
申请号：US09798982
申请日：2001-03-06
申请人： Jun-ichi Shimada , Yoichi Kawakami , Shigeo Fujita
发明人： Jun-ichi Shimada , Yoichi Kawakami , Shigeo Fujita
IPC分类号： F21V2108
CPC分类号： G06F3/013 , A61B90/30 , F21L15/14 , F21W2131/20 , G02C11/04
摘要： A gazing point illuminating device is provided with: a light source; a direction changing mechanism for changing the lighting direction of the light source; a gazing direction detector for detecting the direction of the user's gazing line; and a controller for changing the lighting direction corresponding to the detected gazing direction. When, LEDs are used as the light source, and the light source is attached to the goggles worn by a user, the goggles can be useful gazing point illuminating device by themselves even if they do not include gazing point or direction detectors, because a person normally look straight ahead except for unusual occasions where he/she purposefully avert his/her gaze. Thus, an illuminating device fixed to a person's head for lighting forward is a gazing point illuminating device. It is preferred to provide an LED panel at the left and right ends of goggles.
摘要翻译：注视点照明装置设置有：光源; 用于改变光源的照明方向的方向改变机构; 用于检测使用者的注视线的方向的注视方向检测器; 以及控制器，用于改变与所检测的注视方向相对应的照明方向。当使用LED作为光源，并且将光源附着到用户佩戴的护目镜时，即使它们不包括注视点或方向检测器，护目镜也可以自己使用，因为一个人通常看起来很直前，除了他/她有目的地避开他/她的目光的异常场合。因此，固定在人的头部用于向前照明的照明装置是注视点照明装置。优选在护目镜的左右两端设置LED面板。

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