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1. 发明授权

US07195993B2 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches 有权
标题翻译：通过横向生长形成沟槽来制造氮化镓半导体层的方法
公开(公告)号：US07195993B2
公开(公告)日：2007-03-27
申请号：US10915665
申请日：2004-08-10
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： H01L21/36
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

2. 发明授权

US06489221B2 High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates 有权
标题翻译：在蓝宝石衬底上制造氮化镓半导体层的高温双面外延方法
公开(公告)号：US06489221B2
公开(公告)日：2002-12-03
申请号：US09780715
申请日：2001-02-09
申请人： Thomas Gehrke , Kevin J. Linthicum , Robert F. Davis , Darren B. Thomson
发明人： Thomas Gehrke , Kevin J. Linthicum , Robert F. Davis , Darren B. Thomson
IPC分类号： H01L2120
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/0265 , H01S5/0213 , H01S2304/12
摘要： Embodiments of the present invention pendeoepitaxially grow sidewalls of posts in an underlying gallium nitride layer that itself is on a sapphire substrate, at high temperatures between about 1000° C. and about 1100° C. and preferably at about 1100° to reduce vertical growth of gallium nitride on the trench floor from interfering with the pendeoepitaxial growth of the gallium nitride sidewalls of the posts. Thus, widely available sapphire substrates may be used for pendeoepitaxial of gallium nitride, to thereby allow reduced cost and/or wider applications for gallium nitride devices. More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium nitride layer. The at least one post includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a trench floor. The gallium nitride sidewalls are laterally grown into the at least one trench, to thereby form a gallium nitride semiconductor layer.
摘要翻译：本发明的实施例在其本身在蓝宝石衬底上的下面的氮化镓层中，在约1000℃至约1100℃之间的高温下，优选在约1100°的高温下，将柱的侧壁生长成柱状外延，以减少垂直生长沟槽地板上的氮化镓干扰柱的氮化镓侧壁的外延生长。因此，可广泛使用的蓝宝石衬底可以用于氮化镓的双向外延，从而可以降低氮化镓器件的成本和/或更广泛的应用。更具体地，氮化镓半导体层可以通过蚀刻蓝宝石衬底上的下面的氮化镓层来限定下面的氮化镓层中的至少一个柱和下面的氮化镓层中的至少一个沟槽来制造。所述至少一个柱包括氮化镓顶部和氮化镓侧壁。所述至少一个沟槽包括沟槽底板。氮化镓侧壁横向生长到至少一个沟槽中，从而形成氮化镓半导体层。

3. 发明授权

US06265289B1 Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby 有权
标题翻译：通过从侧壁横向生长成沟槽来制造氮化镓半导体层的方法，以及由此制造的氮化镓半导体结构
公开(公告)号：US06265289B1
公开(公告)日：2001-07-24
申请号：US09327136
申请日：1999-06-07
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： H01L2136
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A sidewall of an underlying gallium nitride layer is laterally grown into a trench in the underlying gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. Microelectronic devices may then be formed in the lateral gallium nitride layer. Dislocation defects do not significantly propagate laterally from the sidewall into the trench in the underlying gallium nitride layer, so that the lateral gallium nitride semiconductor layer is relatively defect free. Moreover, the sidewall growth may be accomplished without the need to mask portions of the underlying gallium nitride layer during growth of the lateral gallium nitride layer. The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer. In one embodiment, the lateral gallium nitride layer is masked with a mask that includes an array of openings therein. The lateral gallium nitride layer is then grown through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer. In another embodiment, the lateral gallium nitride layer is grown vertically. A plurality of second sidewalls are formed in the vertically grown gallium nitride layer to define a plurality of second trenches. The plurality of second sidewalls of the vertically grown gallium nitride layer are then laterally grown into the plurality of second trenches, to thereby form a second lateral gallium nitride layer. Microelectronic devices are then formed in the gallium nitride semiconductor layer.
摘要翻译：下面的氮化镓层的侧壁横向生长在下面的氮化镓层中的沟槽中，从而形成横向氮化镓半导体层。然后可以在横向氮化镓层中形成微电子器件。位错缺陷不会从侧壁横向渗透到下面的氮化镓层中的沟槽中，使得侧向氮化镓半导体层相对无缺陷。此外，可以在横向氮化镓层的生长期间不需要掩盖下面的氮化镓层的部分来实现侧壁生长。通过从侧向氮化镓层生长第二氮化镓半导体层，可以进一步降低横向氮化镓半导体层的缺陷密度。在一个实施例中，横向氮化镓层用包括其中的开口阵列的掩模掩蔽。然后横向氮化镓层通过开口阵列生长到掩模上，从而形成过度生长的氮化镓半导体层。在另一个实施例中，横向氮化镓层垂直生长。在垂直生长的氮化镓层中形成多个第二侧壁以限定多个第二沟槽。然后将垂直生长的氮化镓层的多个第二侧壁横向生长成多个第二沟槽，从而形成第二横向氮化镓层。然后在氮化镓半导体层中形成微电子器件。

4. 发明授权

US07378684B2 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates 失效
标题翻译：在碳化硅衬底上的先进的外延氮化镓半导体层
公开(公告)号：US07378684B2
公开(公告)日：2008-05-27
申请号：US10193823
申请日：2002-07-12
申请人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
发明人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
IPC分类号： H01L29/20
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.
摘要翻译：在碳化硅衬底上的下面的氮化镓层用掩模进行掩模，该掩模包括其中的开口阵列，并且通过开口阵列蚀刻下面的氮化镓层，以在下面的氮化镓层和沟槽之间形成沟槽。所述柱各自包括侧壁和其上具有掩模的顶部。柱的侧壁横向生长到沟槽中，从而形成氮化镓半导体层。在这种侧向生长期间，面罩防止从柱的顶部成核和垂直生长。因此，生长横向进入沟槽，从柱的侧壁悬挂。柱的侧壁可以横向生长到沟槽中，直到横向生长的侧壁在沟槽中聚结，从而形成氮化镓半导体层。可以继续从柱的侧壁的横向生长，使得氮化镓层垂直地通过掩模中的开口生长，并且横向过度地延伸到柱的顶部上的掩模上，从而形成氮化镓半导体层。横向过度生长可以继续，直到生长的侧壁在掩模上聚结，从而形成连续的氮化镓半导体层。微电子器件可以形成在连续的氮化镓半导体层中。

5. 发明授权

US06897483B2 Second gallium nitride layers that extend into trenches in first gallium nitride layers 有权
标题翻译：第二氮化镓层延伸到第一氮化镓层中的沟槽中
公开(公告)号：US06897483B2
公开(公告)日：2005-05-24
申请号：US10426553
申请日：2003-04-30
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01S5/02 , H01L31/0312 , H01L21/15
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

6. 发明授权

US07217947B2 Semiconductor light source and method of making 有权
标题翻译：半导体光源及其制作方法
公开(公告)号：US07217947B2
公开(公告)日：2007-05-15
申请号：US10912153
申请日：2004-08-06
申请人： Rowland C. Clarke , Michel E. Aumer , Darren B. Thomson
发明人： Rowland C. Clarke , Michel E. Aumer , Darren B. Thomson
IPC分类号： H01L29/00
CPC分类号： H01L33/20 , H01L33/08 , H01L33/10 , H01L33/38
摘要： A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandwiched between the side wall of a finger member and a second semiconductor member of a conductivity type opposite to that of the finger member. Ohmic contacts are applied to the finger members and second semiconductor member for receiving a voltage. The device is GaN based such that emitted light will be in the UV region.
摘要翻译：一种固态发光器件，具有多个半导体指状元件，侧壁垂直于衬底。在侧壁上形成多个量子阱，并且也垂直于衬底。每个多量子阱被夹在指状构件的侧壁和与手指构件的相反的导电类型的第二半导体构件之间。欧姆接触被施加到用于接收电压的指状构件和第二半导体构件。器件是基于GaN的，使得发射的光将在UV区域中。

7. 发明授权

US06602764B2 Methods of fabricating gallium nitride microelectronic layers on silicon layers 有权
标题翻译：在硅层上制造氮化镓微电子层的方法
公开(公告)号：US06602764B2
公开(公告)日：2003-08-05
申请号：US09850687
申请日：2001-05-07
申请人： Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis , Darren B. Thomson , Kieran M. Tracy
发明人： Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis , Darren B. Thomson , Kieran M. Tracy
IPC分类号： H01L2120
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02502 , H01L21/02516 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L21/0265 , H01L21/02658 , H01L21/02664 , H01L29/267
摘要： A gallium nitride microelectronic layer is fabricated by converting a surface of a (111) silicon layer to 3C-silicon carbide. A layer of 3C-silicon carbide is then epitaxially grown on the converted surface of the (111) silicon layer. A layer of 2H-gallium nitride then is grown on the epitaxially grown layer of 3C-silicon carbide. The layer of 2H-gallium nitride then is laterally grown to produce the gallium nitride microelectronic layer. The silicon layer is a (111) silicon substrate, the surface of which is converted to 3C-silicon carbide, or the (111) silicon layer is part of a Separation by IMplanted OXygen (SIMOX) silicon substrate which includes a layer of implanted oxygen that defines the (111) layer on the (111) silicon substrate, or the (111) silicon layer is a portion of a Silicon-On-Insulator (SOI) substrate in which a (111) silicon layer is bonded to a substrate.
摘要翻译：通过将（111）硅层的表面转化为3C-碳化硅来制造氮化镓微电子层。然后在（111）硅层的转化表面上外延生长3C碳化硅层。然后在3C-碳化硅的外延生长层上生长一层2H-氮化镓。然后将2H-氮化镓层横向生长以产生氮化镓微电子层。硅层是（111）硅衬底，其表面转化为3C-碳化硅，或（111）硅层是通过嵌入式氧气（SIMOX）硅衬底分离的一部分，其包括一层注入的氧其限定（111）硅衬底上的（111）层，或（111）硅层是其中（111）硅层结合到衬底的绝缘体上硅衬底的一部分。

8. 发明授权

US06255198B1 Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby 有权
公开(公告)号：US06255198B1
公开(公告)日：2001-07-03
申请号：US09441754
申请日：1999-11-17
申请人： Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis , Darren B. Thomson , Kieran M. Tracy
发明人： Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis , Darren B. Thomson , Kieran M. Tracy
IPC分类号： H01L2120
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02502 , H01L21/02516 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L21/0265 , H01L21/02658 , H01L21/02664 , H01L29/267
摘要： A gallium nitride microelectronic layer is fabricated by converting a surface of a (111) silicon layer to 3C-silicon carbide. A layer of 3C-silicon carbide is then epitaxially grown on the converted surface of the (111) silicon layer. A layer of 2H-gallium nitride then is grown on the epitaxially grown layer of 3C-silicon carbide. The layer of 2H-gallium nitride then is laterally grown to produce the gallium nitride microelectronic layer. In one embodiment, the silicon layer is a (111) silicon substrate, the surface of which is converted to 3C-silicon carbide. In another embodiment, the (111) silicon layer is part of a Separation by IMplanted OXygen (SIMOX) silicon substrate which includes a layer of implanted oxygen that defines the (111) layer on the (111) silicon substrate. In yet another embodiment, the (111) silicon layer is a portion of a Silicon-On-Insulator (SOI) substrate in which a (111) silicon layer is bonded to a substrate. Lateral growth of the layer of 2H-gallium nitride may be performed by Epitaxial Lateral Overgrowth (ELO) wherein a mask is formed on the layer of 2H-gallium nitride, the mask including at least one opening that exposes the layer of 2H-gallium nitride. The layer of 2H-gallium nitride then is laterally grown through the at least one opening and onto the mask. A second, offset mask also may be formed on the laterally grown layer of 2H-gallium nitride and a second laterally grown layer of 2H-gallium nitride may be overgrown onto the offset mask. Lateral growth of the layer of 2H-gallium nitride also may be performed using pendeoepitaxial techniques wherein at least one trench and/or post is formed in a layer of 2H-gallium nitride to define at least one sidewall therein. The layer of 2H-gallium nitride is then laterally grown from the at least one sidewall. Pendeoepitaxial lateral growth preferably continues until the laterally grown sidewalls coalesce on the top of the posts or trenches. The top of the posts and/or the trench floors may be masked to promote lateral growth and reduce nucleation and vertical growth.

9. 发明授权

US06462355B1 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates 有权
公开(公告)号：US06462355B1
公开(公告)日：2002-10-08
申请号：US09717717
申请日：2000-11-21
申请人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
发明人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
IPC分类号： H01L29267
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

10. 发明授权

US06376339B2 PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SILICON CARBIDE SUBSTRATES BY LATERAL GROWTH FROM SIDEWALLS OF MASKED POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY 有权
标题翻译：通过边缘生长形成的硅碳化物基板上的氮化钛半导体层的制备方法和氮化钛半导体结构的制备方法
公开(公告)号：US06376339B2
公开(公告)日：2002-04-23
申请号：US09780072
申请日：2001-02-09
申请人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
发明人： Kevin J. Linthicum , Thomas Gehrke , Darren B. Thomson , Eric P. Carlson , Pradeep Rajagopal , Robert F. Davis
IPC分类号： H01L2120
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.
摘要翻译：在碳化硅衬底上的下面的氮化镓层用掩模进行掩模，该掩模包括其中的开口阵列，并且通过开口阵列蚀刻下面的氮化镓层，以在下面的氮化镓层和沟槽之间形成沟槽。所述柱各自包括侧壁和其上具有掩模的顶部。柱的侧壁横向生长到沟槽中，从而形成氮化镓半导体层。在这种侧向生长期间，面罩防止从柱的顶部成核和垂直生长。因此，生长横向进入沟槽，从柱的侧壁悬挂。柱的侧壁可以横向生长到沟槽中，直到横向生长的侧壁在沟槽中聚结，从而形成氮化镓半导体层。可以继续从柱的侧壁的横向生长，使得氮化镓层垂直地通过掩模中的开口生长，并且横向过度地延伸到柱的顶部上的掩模上，从而形成氮化镓半导体层。横向过度生长可以继续，直到生长的侧壁在掩模上聚结，从而形成连续的氮化镓半导体层。微电子器件可以形成在连续的氮化镓半导体层中。

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