专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20040087152A1 Interferometric endpoint determination in a substrate etching process 失效
标题翻译：基板蚀刻工艺中的干涉测量端点测定
公开(公告)号：US20040087152A1
公开(公告)日：2004-05-06
申请号：US10286402
申请日：2002-11-01
申请人： Applied Materials, Inc.
发明人： Lei Lian , Matthew F. Davis
IPC分类号： H01L021/00 , H01L021/302 , H01L021/461
CPC分类号： H01J37/32935 , G01B11/0675 , G01B11/0683 , H01J37/32963
摘要： In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.
摘要翻译：在确定蚀刻衬底的端点时，指向衬底的光从衬底反射。选择光的波长以在蚀刻处理的初始时间点局部地最大化反射光的强度。检测反射光以确定基板蚀刻工艺的端点。

2. 发明申请

US20020129903A1 Variable efficiency faraday shield 失效
标题翻译：可变效率法拉第盾
公开(公告)号：US20020129903A1
公开(公告)日：2002-09-19
申请号：US09808649
申请日：2001-03-14
申请人： Applied Materials, Inc.
发明人： Matthew F. Davis , Frank Hooshdaran
IPC分类号： C23F001/00 , C23C016/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/321
摘要： A Faraday shield for use with a plasma reactor has a variable shielding efficiency. The shield is divided into numerous shield segments that may each be selectively grounded or ungrounded. The rate of transition between fully ungrounded and fully grounded states is controllable so as to maintain stable plasma conditions in the plasma reactor during the transitional period. The time rate of change of the shielding efficiency can be controlled at a predetermined rate once plasma strike is achieved, or can be made conditional to successful matching at the previous shield setting. When the Faraday shield is fully grounded, the amount of on-wafer and on-chamber contamination is reduced by reducing the rate of sputtering of chamber surfaces.
摘要翻译：与等离子体反应器一起使用的法拉第屏蔽具有可变的屏蔽效率。屏蔽分为多个屏蔽段，每个屏蔽段可以选择性地接地或不接地。在完全不接地和完全接地状态之间的转换速率是可控的，以便在过渡期间保持等离子体反应器中稳定的等离子体条件。一旦实现等离子体击打，屏蔽效率的时间变化率可以以预定的速率被控制，或者可以在先前的屏蔽设置下成功地进行匹配。当法拉第屏蔽完全接地时，通过降低腔表面的溅射速率来降低片上和室内污染的量。

3. 发明申请

US20040200574A1 Method for controlling a process for fabricating integrated devices 审中-公开
标题翻译：用于控制用于制造集成器件的工艺的方法
公开(公告)号：US20040200574A1
公开(公告)日：2004-10-14
申请号：US10805136
申请日：2004-03-19
申请人： Applied Materials, Inc.
发明人： Matthew F. Davis , Lei Lian , Barbara Schmidt
IPC分类号： H01L021/66 , G01R031/26 , C23F001/00 , H01L021/306
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/37398 , G05B2219/45031 , G05B2219/45212 , H01J37/32935 , H01L21/3065 , H01L22/20 , Y02P90/20 , Y02P90/22
摘要： A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.
摘要翻译：一种用于控制在衬底上制造集成器件的工艺的方法。该方法包括用于在衬底上形成的结构的预蚀刻和蚀刻后尺寸的原位和原位测量，并且使用测量结果来调整工艺配方并控制蚀刻和外部衬底处理设备的操作状态。在一个示例性应用中，该方法在用于制造沟槽电容器的电容结构的多遍处理期间被使用。

4. 发明申请

US20040018647A1 Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry 审中-公开
标题翻译：使用光学反射法控制蚀刻轮廓中的切口或底切的程度的方法
公开(公告)号：US20040018647A1
公开(公告)日：2004-01-29
申请号：US10374464
申请日：2003-02-24
申请人： Applied Materials, Inc.
发明人： Steven J. Jones , Shashank C. Deshmukh , Matthew F. Davis , Lei Lian , Chan-Syun Yang
IPC分类号： H01L021/336 , H01L021/00
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/28114 , H01L21/28123 , H01L21/32137 , H01L21/67069
摘要： A method and apparatus for controlling lateral etching during an etching process. The method and apparatus includes laterally etching a lower layer of a stack of layers in a processing chamber, where an endpoint detection system radiates a spectrum of light over the lower layer being etched and an area over the stack of layers proximate to the lower layer being etched. The intensity of light reflected from at least one of the stacked layers positioned lateral to the lower layer being etched is then measured. An endpoint detection system terminates the etching process upon measuring a predetermined metric associated with the intensity of reflected light from the at least one of the stacked layers.
摘要翻译：一种用于在蚀刻工艺期间控制横向蚀刻的方法和装置。所述方法和装置包括在处理室中横向蚀刻层叠层的下层，其中端点检测系统在被蚀刻的下层上辐射光谱，并且靠近下层的层叠层上的区域是蚀刻。然后测量从被蚀刻的下层位于两侧的堆叠层中的至少一个反射的光的强度。端点检测系统在测量与来自至少一个堆叠层的反射光的强度相关联的预定度量时终止蚀刻工艺。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式