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    • 2. 发明申请
    • Growth of nanostructures with controlled diameter
    • 具有受控直径的纳米结构的生长
    • US20040247516A1
    • 2004-12-09
    • US10726394
    • 2003-12-02
    • Lisa PfefferleGary HallerDragos Ciuparu
    • D01F009/12
    • B82Y30/00D01F9/127Y10S977/842
    • Transition metal-substituted MCM-41 framework structures with a high degree of structural order and a narrow pore diameter distribution were reproducibly synthesized by a hydrothermal method using a surfactant and an anti-foaming agent. The pore size and the mesoporous volume depend linearly on the surfactant chain length. The transition metals, such as cobalt, are incorporated substitutionally and highly dispersed in the silica framework. Single wall carbon nanotubes with a narrow diameter distribution that correlates with the pore diameter of the catalytic framework structure were prepared by a Boudouard reaction. Nanostructures with a specified diameter or cross-sectional area can therefore be predictably prepared by selecting a suitable pore size of the framework structure.
    • 通过使用表面活性剂和消泡剂的水热法可重复合成具有高度结构顺序和窄孔径分布的过渡金属取代的MCM-41骨架结构。 孔径和介孔体积与表面活性剂链长度呈线性关系。 过渡金属,例如钴,被代替并且高度分散在二氧化硅骨架中。 通过Boudouard反应制备具有与催化骨架结构的孔直径相关的窄直径分布的单壁碳纳米管。 因此,可以通过选择合适的骨架结构孔径来预测具有特定直径或横截面面积的纳米结构。
    • 3. 发明申请
    • Single-wall carbon nanotubes from high pressure CO
    • 单壁碳纳米管由高压CO
    • US20040223901A1
    • 2004-11-11
    • US10730630
    • 2003-12-08
    • William Marsh Rice University
    • Richard E. SmalleyKen A. SmithDaniel T. ColbertPavel NikolaevMichael J. BronikowskiRobert K. BradleyFrank Rohmund
    • D01F009/12
    • B01J4/002B01J3/04B01J3/042B01J19/121B01J19/26B01J2219/0875B82Y30/00B82Y40/00C01B32/162C01B2202/02C01B2202/36D01F9/1278Y10S977/75Y10S977/751Y10S977/843Y10S977/845Y10S977/951Y10T428/30
    • The present invention discloses the process of supplying high pressure (e.g., 30 atmospheres) CO that has been preheated (e.g., to about 1000null C.) and a catalyst precursor gas (e.g., Fe(CO)5) in CO that is kept below the catalyst precursor decomposition temperature to a mixing zone. In this mixing zone, the catalyst precursor is rapidly heated to a temperature that results in (1) precursor decomposition, (2) formation of active catalyst metal atom clusters of the appropriate size, and (3) favorable growth of SWNTs on the catalyst clusters. Preferably a catalyst cluster nucleation agency is employed to enable rapid reaction of the catalyst precursor gas to form many small, active catalyst particles instead of a few large, inactive ones. Such nucleation agencies can include auxiliary metal precursors that cluster more rapidly than the primary catalyst, or through provision of additional energy inputs (e.g., from a pulsed or CW laser) directed precisely at the region where cluster formation is desired. Under these conditions SWNTs nucleate and grow according to the Boudouard reaction. The SWNTs thus formed may be recovered directly or passed through a growth and annealing zone maintained at an elevated temperature (e.g., 1000null C.) in which tubes may continue to grow and coalesce into ropes.
    • 本发明公开了在被保留的CO中提供已被预热(例如,约1000℃)的高压(例如,30个大气压)的CO和催化剂前体气体(例如,Fe(CO)5)的过程。 催化剂前体分解温度低于混合区。 在该混合区中,将催化剂前体快速加热到导致(1)前体分解的温度,(2)形成适当尺寸的活性催化剂金属原子簇,和(3)在催化剂簇上的SWNT的有利生长 。 优选使用催化剂簇成核剂来使催化剂前体气体快速反应以形成许多小的活性催化剂颗粒,而不是几个大的非活性催化剂颗粒。 这样的成核机构可以包括比主要催化剂更快地聚集的辅助金属前体,或者通过提供精确地指向需要簇形成的区域的额外的能量输入(例如来自脉冲或CW激光)。 在这些条件下,SWNT根据Boudouard反应成核并生长。 如此形成的SWNT可以直接回收或通过保持在高温(例如1000℃)的生长和退火区域,其中管可以继续生长并聚结成绳索。
    • 7. 发明申请
    • Method for selective enrichment of carbon nanotubes
    • 选择性富集碳纳米管的方法
    • US20040191157A1
    • 2004-09-30
    • US10404279
    • 2003-03-31
    • Avetik HarutyunyanToshio Tokune
    • D01F009/12
    • B82Y30/00B82Y40/00C01B32/168C01B2202/22D01F9/127
    • A method for treating carbon nanotubes with microwave energy to selective remove metallic-type carbon nanotubes is provided. A sample containing carbon nanotubes is positioned in a microwave cavity at a location corresponding to a maximum in the electric field component of a stationary wave having a microwave frequency. The sample is exposed to the microwave energy for a sufficient period of time to increase the proportion of semiconducting-type carbon nanotubes within the sample. Alternatively, a sample consisting essentially of metallic-type and semiconducting-type carbon nanotubes is exposed to microwave energy for a sufficient period of time to increase the proportion of semiconducting-type carbon nanotubes within the sample.
    • 提供了一种用微波能量处理碳纳米管以选择性去除金属型碳纳米管的方法。 含有碳纳米管的样品位于与微波频率的固定波的电场分量中的最大值相对应的位置处的微波空腔中。 将样品暴露于微波能量足够长的时间以增加样品中半导体型碳纳米管的比例。 或者,基本上由金属型和半导体型碳纳米管组成的样品暴露于微波能量足够的时间以增加样品中半导体型碳纳米管的比例。
    • 8. 发明申请
    • Crystals comprising single-walled carbon nanotubes
    • 包含单壁碳纳米管的晶体
    • US20040115114A1
    • 2004-06-17
    • US10416553
    • 2004-02-05
    • James GimzewskiJin Woo SeoReto SchlittlerMark E Welland
    • D01F009/12
    • B82Y30/00B82Y40/00C01B32/162C01B2202/02C30B1/00C30B23/00C30B23/005C30B29/02C30B29/605
    • The invention is directed to a method of manufacturing single-walled carbon nanotubes comprising the steps of providing on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst, and heating the at least one pillar. It further is directed to a precursor arrangement for manufacturing single-walled carbon nanotubes comprising on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst. A third aspect is a nanotube arrangement comprising a substrate and thereupon at least one crystal comprising a bundle of single-walled carbon nanotubes with essentially identical orientation and structure.
    • 本发明涉及一种制造单壁碳纳米管的方法,包括以下步骤:在基材上提供至少一个柱,该柱包括包含富勒烯分子的第一前体材料和包含催化剂的第二前体材料的交替层, 至少一个支柱。 本发明还涉及用于制造单壁碳纳米管的前体装置,其包括在至少一个支柱上的至少一个柱,所述至少一个柱包括包含富勒烯分子的第一前体材料的交替层和包含催化剂的第二前体材料。 第三方面是纳米管布置,其包括基底,并且随后至少一个晶体包括具有基本上相同取向和结构的单层碳纳米管束。
    • 9. 发明申请
    • Carbon nanotube array and method for making same
    • 碳纳米管阵列及其制造方法
    • US20040109815A1
    • 2004-06-10
    • US10640340
    • 2003-08-12
    • Liang LiuShou-Shan Fan
    • D01F009/12
    • D01F9/1275B82Y30/00D01F9/127Y10S977/742Y10S977/85
    • A carbon nanotube-based device (40) includes a substrate (10), a number of catalytic nano-sized particles (131) formed on the substrate, and an aligned carbon nanotube array (15) extending from the alloy catalytic nano-sized particles. The aligned carbon nanotube array progressively bends in a predetermined direction. A method for making the carbon nanotube-based device includes the steps of: providing a substrate; depositing a layer of catalyst on the substrate; depositing a layer of catalyst-doped material on the catalyst layer, for varying a reaction rate of synthesis of the aligned carbon nanotube array; annealing the catalyst and the catalyst-doped material in an oxygen-containing gas at a low temperature; and exposing the nano-sized particles and catalyst-doped material to a carbon-containing source gas at a predetermined temperature such that the aligned carbon nanotube array grows from the substrate.
    • 基于碳纳米管的器件(40)包括基板(10),形成在基板上的多个催化纳米尺寸颗粒(131)和从合金催化纳米尺寸颗粒延伸的排列的碳纳米管阵列(15) 。 对准的碳纳米管阵列沿预定方向逐渐弯曲。 制造碳纳米管的器件的方法包括以下步骤:提供衬底; 在衬底上沉积催化剂层; 在催化剂层上沉积催化剂掺杂材料层,以改变对准的碳纳米管阵列的合成反应速率; 在低温下在含氧气体中退火催化剂和催化剂掺杂材料; 以及将纳米尺寸颗粒和催化剂掺杂材料暴露于预定温度下的含碳源气体,使得对准的碳纳米管阵列从衬底生长。
    • 10. 发明申请
    • Method for manufacturing carbon nanotubes
    • 制造碳纳米管的方法
    • US20040105807A1
    • 2004-06-03
    • US10410069
    • 2003-04-08
    • Shoushan FanLiang LiuKaili Jiang
    • D01F009/12
    • B82Y30/00B82Y40/00C01B32/16C01B32/174C01B2202/08C01B2202/34D01F9/127D01F9/1271D01F9/1272D01F9/1275
    • The present invention provides a method for manufacturing carbon nanotubes. The method includes the following steps: (a) providing a substrate (3); (b) depositing a catalyst material (1) onto the substrate; (c) exposing the catalyst material to a carbon containing gas for a predetermined period of time in a predetermined temperature such that an array of carbon nanotube having a predetermined length grows from the substrate in a direction substantially perpendicular to the substrate; (d) removing the carbon nanotubes from the substrate; and (e) dispersing the carbon nanotubes via ultrasonication in a dispersant, the dispersant being ethanol or 1-2 dichloroethane. The carbon nanotubes of the present invention have a predetermined same length and are aligned parallel to each other.
    • 本发明提供一种碳纳米管的制造方法。 该方法包括以下步骤:(a)提供衬底(3); (b)将催化剂材料(1)沉积到所述基底上; (c)在预定温度下将催化剂材料暴露于含碳气体预定时间段,使得具有预定长度的碳纳米管阵列从基底沿基本垂直于基底的方向生长; (d)从基材除去碳纳米管; 和(e)通过超声波将碳纳米管分散在分散剂中,分散剂是乙醇或1-2二氯乙烷。 本发明的碳纳米管具有预定相同的长度并且彼此平行排列。