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1. 发明授权

US06758898B2 Method for single crystal growth of barium titanate and barium titanate solid solution 有权
标题翻译：钛酸钡和钛酸钡固溶体的单晶生长方法
公开(公告)号：US06758898B2
公开(公告)日：2004-07-06
申请号：US10163526
申请日：2002-06-07
申请人： Ho-Yong Lee , Jao-Suk Kim , Jong-Bong Lee , Tae-Moo Hur , Doe-Yeon Kim , Nong-Moon Hwang , Byoung-Ki Lee , Sung-Yoon Chung , Suk-Joong L. Kang
发明人： Ho-Yong Lee , Jao-Suk Kim , Jong-Bong Lee , Tae-Moo Hur , Doe-Yeon Kim , Nong-Moon Hwang , Byoung-Ki Lee , Sung-Yoon Chung , Suk-Joong L. Kang
IPC分类号： C30B102
CPC分类号： C30B11/00 , C30B29/32
摘要： The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1−x)(TiyN1−y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment. The method for growing single crystals of barium titanate and barium titanate solid solutions according to this invention is also applicable to other material systems showing abnormal grain growth behavior.
摘要翻译：本发明涉及一种生长钛酸钡[BaTiO3]和钛酸钡固溶体[（BaxM1-x）（TiyN1-y）O3]单晶的方法。本发明涉及一种用于生长钛酸钡或钛酸钡固体溶液的单晶的方法，其显示出主要和次要的异常晶粒生长，其温度高于液体形成温度，其特征在于包括少量次级异常晶粒继续的步骤在略低于次生异常晶粒生长开始发生的临界温度的温度下生长。根据本发明的用于生长钛酸钡或钛酸钡固溶体的单晶的方法具有通过使用常规热处理工艺而不需要特殊设备来提供单晶制造工艺的有效低成本的优点。根据本发明的用于生长钛酸钡和钛酸钡固溶体的单晶的方法也适用于显示异常晶粒生长行为的其它材料体系。

2. 发明授权

US06582512B2 Method of forming three-dimensional photonic band structures in solid materials 失效
公开(公告)号：US06582512B2
公开(公告)日：2003-06-24
申请号：US09861770
申请日：2001-05-22
申请人： Joseph E. Geusic , Kevin G. Donohoe
发明人： Joseph E. Geusic , Kevin G. Donohoe
IPC分类号： C30B102
CPC分类号： B82Y20/00 , G02B6/1225 , G02B6/13 , H01L29/04 , H01L29/06 , H01S5/105
摘要： A method of forming a periodic index of refraction pattern in a superlattice of a solid material to achieve photonic bandgap effects at desired optical wavelengths is disclosed. A plurality of space group symmetries, including a plurality of empty-spaced buried patterns, are formed by drilling holes in the solid material and annealing the solid material to form empty-spaced patterns of various geometries. The empty-spaced patterns may have various sizes and may be formed at different periodicities, so that various photonic band structures can be produced for wavelength regions of interest.

3. 发明授权

US06592661B1 Method for processing wafers in a semiconductor fabrication system 失效
标题翻译：在半导体制造系统中处理晶片的方法
公开(公告)号：US06592661B1
公开(公告)日：2003-07-15
申请号：US09028979
申请日：1998-02-25
申请人： Randhir P. S. Thakur , Ronald A. Weimer
发明人： Randhir P. S. Thakur , Ronald A. Weimer
IPC分类号： C30B102
CPC分类号： C30B31/12
摘要： A method of manufacturing semiconductor wafers in a processing chamber having at least one radiant heat source is provided. The method includes the steps of applying a predetermined amount of power to the radiant heat source and positioning a wafer within the processing chamber. The predetermined amount of power applied to the at least one radiant heat source is set such that the wafer reaches a predetermined temperature in a predetermined amount of time for carrying out a desired process in the processing chamber. The processing chamber is particularly suited for very low pressure environments and may be used to form HSG in a clustered or non-clustered system. A reflective plate may be used so that the radiated properties of the wafer are substantially independent of the emissivity of the wafer thereby minimizing emissivity variation from one wafer to another. Another plate may be used to form an isothermal cavity between the plate and the wafer to minimize emissivity variation from one wafer to another.
摘要翻译：提供了在具有至少一个辐射热源的处理室中制造半导体晶片的方法。该方法包括以下步骤：向辐射热源施加预定量的功率并将晶片定位在处理室内。设置施加到至少一个辐射热源的预定量的功率，使得晶片在预定时间内达到预定温度，以在处理室中进行所需的处理。处理室特别适用于非常低压的环境，并可用于在集群或非集群系统中形成HSG。可以使用反射板，使得晶片的辐射特性基本上与晶片的发射率无关，从而使从一个晶片到另一个晶片的发射率变化最小化。可以使用另一个板来在板和晶片之间形成等温腔，以使从一个晶片到另一个晶片的发射率变化最小化。

4. 发明授权

US06537368B2 Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor 有权
标题翻译：理想的氧气沉淀外延硅晶片和氧气外扩散工艺
公开(公告)号：US06537368B2
公开(公告)日：2003-03-25
申请号：US09928739
申请日：2001-08-13
申请人： Robert J. Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
发明人： Robert J. Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
IPC分类号： C30B102
CPC分类号： H01L21/3225 , Y10S257/913 , Y10T428/21 , Y10T428/249969
摘要： A process for preparing a silicon epitaxial wafer. The wafer has a front surface having an epitaxial layer deposited thereon, a back surface, and a bulk region between the front and back surfaces, wherein the bulk region contains a concentration of oxygen precipitates. In the process, the wafer is first subjected to an ideal oxygen precipitating heat treatment to causes the formation of a non-uniform distribution of crystal lattice vacancies with the concentration of vacancies in the bulk region being greater than the distribution of vacancies in the front surface. The ideal precipitating wafer is then subjected to an oxygen precipitation heat treatment to cause the nucleation and growth of oxygen precipitates to a size sufficient to stabilize the oxygen precipitates, with the oxygen precipitates being formed primarily according to the vacancy profile. An epitaxial layer is then deposited on the surface of the oxygen precipitate stabilized wafer.
摘要翻译：一种制备硅外延晶片的方法。晶片具有在其上沉积有外延层的前表面，后表面和前表面和后表面之间的主体区域，其中主体区域含有氧沉淀物的浓度。在此过程中，首先对晶片进行理想的氧沉淀热处理，导致晶体空位的不均匀分布形成，其中本体区域中的空位浓度大于前表面空位的分布。然后对理想的沉淀晶片进行氧沉淀热处理，使氧沉淀物的成核和生长达到足以稳定氧沉淀物的尺寸，其中主要根据空位曲线形成氧沉淀物。然后在氧沉淀稳定晶片的表面上沉积外延层。

5. 发明授权

US06726763B2 Increased wavelength coverage in nonlinear optics by nonuniformly chirped quasi-phase-matching 失效
标题翻译：通过不均匀啁啾准相位匹配增加了非线性光学元件的波长覆盖
公开(公告)号：US06726763B2
公开(公告)日：2004-04-27
申请号：US09993025
申请日：2001-11-06
申请人： Gregory Steven Lee , Roger Lee Jungerman
发明人： Gregory Steven Lee , Roger Lee Jungerman
IPC分类号： C30B102
CPC分类号： G02F1/3558 , G02F1/3775 , G02F2001/3548
摘要： A nonlinear crystal has increased spectral acceptance. The nonlinear crystal includes a plurality of domains. The domains are arranged serially across the nonlinear crystal. The domains have alternating polarity. The poling periods of the domains are varied across the nonlinear crystal so as to provide nonuniform chirping of phase matching of focused optical signals propagated through the nonlinear crystal.
摘要翻译：非线性晶体增加了光谱接收。非线性晶体包括多个畴。这些域串联地布置在非线性晶体上。这些域具有交替的极性。域的极化周期在非线性晶体之间变化，以便提供通过非线性晶体传播的聚焦光信号的相位匹配的不均匀啁啾。

6. 发明授权

US06328794B1 Method of controlling stress in a film 失效
标题翻译：控制薄膜应力的方法
公开(公告)号：US06328794B1
公开(公告)日：2001-12-11
申请号：US08944852
申请日：1997-10-06
申请人： Donald Walter Brouillette , Timothy Charles Krywanczyk , Jerome Brett Lasky , Rick Lawrence Mohler , Wolfgang Otto Rauscher
发明人： Donald Walter Brouillette , Timothy Charles Krywanczyk , Jerome Brett Lasky , Rick Lawrence Mohler , Wolfgang Otto Rauscher
IPC分类号： C30B102
CPC分类号： H01L21/02667 , B81C1/00666 , B81C2201/0167 , B81C2201/0169 , H01L21/02532 , H01L21/2022 , H01L27/1087 , H01L29/66181
摘要： A method of providing a predetermined level and state of stress in a film deposited on a surface of a substrate. In one embodiment, a layer of crystalline material is deposited on a surface of a substrate and then a layer of amorphous material is deposited on the layer of crystalline material. Then, the layers are heated, causing the amorphous material to crystallize. Such crystallization reduces, or even changes the state of, stress in the amorphous layer, which in turn alters the forces applied by the layer to adjacent regions of the substrate. The method may be used for filling a deep-trench capacitor of the type used in trench-storage DRAMs.
摘要翻译：在沉积在基板的表面上的膜中提供预定水平和应力状态的方法。在一个实施例中，将一层结晶材料沉积在衬底的表面上，然后将非晶材料层沉积在结晶材料层上。然后，层被加热，导致无定形材料结晶。这种结晶减少或者甚至改变了非晶层中的应力状态，这进一步改变了由层施加到衬底的相邻区域的力。该方法可以用于填充在沟槽存储DRAM中使用的类型的深沟槽电容器。

7. 发明授权

US06217647B1 Method for producing a monocrystalline layer of a conducting or semiconducting material 失效
标题翻译：用于制造导电或半导体材料的单晶层的方法
公开(公告)号：US06217647B1
公开(公告)日：2001-04-17
申请号：US09235018
申请日：1999-01-21
申请人： Franz Laermer , Wilhelm Frey
发明人： Franz Laermer , Wilhelm Frey
IPC分类号： C30B102
CPC分类号： C23C16/24 , C30B1/023 , C30B29/06
摘要： To produce monocrystalline layers of conducting or semiconducting materials on porous monocrystalline layers of the same material in a reproducible and time-saving manner, a method is provided which involves applying an amorphous layer of the same material to the porous material and converting the amorphous layer to a monocrystalline layer by tempering.
摘要翻译：为了以可重复且节省时间的方式在相同材料的多孔单晶层上制造导电或半导体材料的单晶层，提供了一种方法，其包括将相同材料的非晶层施加到多孔材料并将非晶层转化为单晶层通过回火处理。

8. 发明授权

US06193796B1 Method of crystallizing silicon layer 有权
标题翻译：硅层结晶方法
公开(公告)号：US06193796B1
公开(公告)日：2001-02-27
申请号：US09212506
申请日：1998-12-15
申请人： Myoung-Su Yang
发明人： Myoung-Su Yang
IPC分类号： C30B102
CPC分类号： C30B29/06 , C30B13/24 , Y10S117/904
摘要： A method of crystallizing an amorphous silicon layer to form a polycrystalline silicon layer having uniform and large grain sizes using an improved laser beam profile despite a reduced overlapping ratio. The polycrystalline layer is formed by melting the amorphous silicon layer completely, forming a polycrystalline silicon layer having fine grains by crystallizing the melted silicon layer, re-melting the fine grains in the polycrystalline silicon layer except a portion of the layer at a lower interface thereof, and re-crystallizing the silicon layer including the unmelted portion.
摘要翻译：使用改进的激光束轮廓来结晶非晶硅层以形成具有均匀且大的晶粒尺寸的多晶硅层的方法，尽管重叠比率降低。通过使非晶硅层完全熔融而形成多晶硅层，通过使熔融的硅层结晶而形成具有微细晶粒的多晶硅层，再次熔融多晶硅层中的细晶粒，除了其下部界面处的该层的一部分并且使包含未熔化部分的硅层再结晶。

9. 发明授权

US06783588B2 BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator 失效
标题翻译： BaTiO3-PbTiO3系列单晶及其制造方法，使用这种压电式致动器的压电式致动器和排液头
公开(公告)号：US06783588B2
公开(公告)日：2004-08-31
申请号：US10014355
申请日：2001-12-14
申请人： Hiroshi Aoto , Akira Unno , Tetsuro Fukui , Akio Ikesue
发明人： Hiroshi Aoto , Akira Unno , Tetsuro Fukui , Akio Ikesue
IPC分类号： C30B102
CPC分类号： C04B35/4684 , C30B1/00 , C30B29/32 , H01L41/1871 , H01L41/39
摘要： BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.
摘要翻译： BaTiO3-PbTiO3系单晶通过加热BaTiO3-PbTiO3致密粉末构件或具有比含Ba摩尔数更小的含Pb摩尔数的烧结构件，同时保持粉末或物质处于非熔融状态而单晶。以这种方式，这种单晶可以更快地以晶体生长速度制造和稳定化，显着地有助于提高各种性能中优良的BaTiO3-PbTiO3系列单晶的介电损耗和机电耦合系数，以及为了提供压电性能和生产率特别优异的铅含量比小的压电材料。

10. 发明授权

US06440210B1 Method for producing self-polarized ferro-electric layers, especially PZT layers, with a rhombohedral crystal structure 失效
标题翻译：用于生产具有菱形晶体结构的自偏极化铁电层，特别是PZT层的方法
公开(公告)号：US06440210B1
公开(公告)日：2002-08-27
申请号：US09787378
申请日：2001-03-16
申请人： Rainer Bruchhaus , Dana Pitzer , Robert Primig , Matthias Schreiter
发明人： Rainer Bruchhaus , Dana Pitzer , Robert Primig , Matthias Schreiter
IPC分类号： C30B102
CPC分类号： H01L28/56 , H01L21/31691
摘要： A method for producing self-polarized ferroelectric layers, in particular PZT layers, with a rhombohedral crystal structure includes providing a substrate and heating it to a temperature T1. Afterward the layer with a rhombohedral crystal structure is applied to the substrate by means of a sputtering method. This layer includes a Zr-deficient layer with a Curie temperature TC1 and a Zr-abundant layer with a Curie temperature TC2 wherein TC2
摘要翻译：用于制造具有菱形晶体结构的自极化铁电体层，特别是PZT层的方法包括提供衬底并将其加热到温度T1。之后，通过溅射法将具有菱形晶体结构的层施加到衬底。该层包括具有居里温度TC1的Zr缺陷层和具有居里温度TC2的Zr丰富层，其中TC2

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