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1. 发明授权

US07442253B2 Process for forming low defect density, ideal oxygen precipitating silicon 有权
标题翻译：形成低缺陷密度的工艺，理想的氧沉淀硅
公开(公告)号：US07442253B2
公开(公告)日：2008-10-28
申请号：US11753294
申请日：2007-05-24
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B25/12
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process either comprises exposing the wafer's front and back surfaces to different atmospheres, or thermally annealing two wafers in a face-to-face arrangement.
摘要翻译：本发明涉及一种用于制造硅晶片的方法，其在基本上任意的任何电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含轴对称区域其基本上没有附聚的固有点缺陷。该方法包括将晶片的前表面和后表面暴露于不同的气氛，或者以面对面的布置热退火两个晶片。

2. 发明授权

US06537368B2 Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor 有权
标题翻译：理想的氧气沉淀外延硅晶片和氧气外扩散工艺
公开(公告)号：US06537368B2
公开(公告)日：2003-03-25
申请号：US09928739
申请日：2001-08-13
申请人： Robert J. Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
发明人： Robert J. Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
IPC分类号： C30B102
CPC分类号： H01L21/3225 , Y10S257/913 , Y10T428/21 , Y10T428/249969
摘要： A process for preparing a silicon epitaxial wafer. The wafer has a front surface having an epitaxial layer deposited thereon, a back surface, and a bulk region between the front and back surfaces, wherein the bulk region contains a concentration of oxygen precipitates. In the process, the wafer is first subjected to an ideal oxygen precipitating heat treatment to causes the formation of a non-uniform distribution of crystal lattice vacancies with the concentration of vacancies in the bulk region being greater than the distribution of vacancies in the front surface. The ideal precipitating wafer is then subjected to an oxygen precipitation heat treatment to cause the nucleation and growth of oxygen precipitates to a size sufficient to stabilize the oxygen precipitates, with the oxygen precipitates being formed primarily according to the vacancy profile. An epitaxial layer is then deposited on the surface of the oxygen precipitate stabilized wafer.
摘要翻译：一种制备硅外延晶片的方法。晶片具有在其上沉积有外延层的前表面，后表面和前表面和后表面之间的主体区域，其中主体区域含有氧沉淀物的浓度。在此过程中，首先对晶片进行理想的氧沉淀热处理，导致晶体空位的不均匀分布形成，其中本体区域中的空位浓度大于前表面空位的分布。然后对理想的沉淀晶片进行氧沉淀热处理，使氧沉淀物的成核和生长达到足以稳定氧沉淀物的尺寸，其中主要根据空位曲线形成氧沉淀物。然后在氧沉淀稳定晶片的表面上沉积外延层。

3. 发明授权

US07229693B2 Low defect density, ideal oxygen precipitating silicon 有权
标题翻译：低缺陷密度，理想的氧沉淀硅
公开(公告)号：US07229693B2
公开(公告)日：2007-06-12
申请号：US11058996
申请日：2005-02-16
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： B32B9/04
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.
摘要翻译：本发明涉及一种硅晶片，其在基本上任何任意的电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含基本上为空的轴对称区域的团聚内在点缺陷。

4. 发明授权

US06896728B2 Process for producing low defect density, ideal oxygen precipitating silicon 有权
标题翻译：生产低缺陷密度的工艺，理想的氧沉淀硅
公开(公告)号：US06896728B2
公开(公告)日：2005-05-24
申请号：US10373899
申请日：2003-02-25
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/00 , C30B33/02 , H01L21/322 , C30B15/04 , C30B25/16
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process including growing a single crystal silicon ingot from molten silicon, and as part of the growth process, controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and (iii) a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. A silicon wafer is then sliced from the ingot, subjected to a heat-treatment to form crystal lattice vacancies in the front surface and bulk layers of the wafer and cooled at a rate sufficient to cause a non-uniform vacancy concentration profile in the wafer such that a thermal treatment at a temperature in excess of 750° C., is capable of forming in the wafer a denuded zone in the front surface layer and oxygen clusters or precipitates in the bulk zone with the concentration of the oxygen clusters or precipitates in the bulk layer being primarily dependant upon the concentration of vacancies.
摘要翻译：本发明涉及一种用于制造硅晶片的方法，其在基本上任意的任何电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含轴对称区域其基本上没有附聚的固有点缺陷。该方法包括从熔融硅生长单晶硅锭，并且作为生长过程的一部分，控制（i）恒定直径部分生长期间的生长速度v，（ii）平均轴向温度梯度G0 的晶体在从凝固到不低于约1325℃的温度的温度范围内，和（iii）晶体从固化温度至约1050℃的冷却速率，以便形成基本上没有凝聚的固有点缺陷的轴对称段。然后将硅晶片从锭切片，进行热处理以在晶片的前表面和本体层中形成晶格空位，并以足以在晶片中引起不均匀的空位浓度分布的速率冷却，如在超过750℃的温度下的热处理能够在晶片中形成前表面层中的剥离区域，并且在本体区域中的氧簇或沉淀物中的氧簇或沉淀物的浓度在主体层主要取决于空位的浓度。

5. 发明授权

US06849119B2 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor 有权
标题翻译：理想的氧气沉淀硅晶片和氧气外扩散工艺
公开(公告)号：US06849119B2
公开(公告)日：2005-02-01
申请号：US10430798
申请日：2003-05-06
申请人： Robert J. Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
发明人： Robert J. Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
IPC分类号： C30B29/06 , H01L21/26 , H01L21/322 , C30B1/02
CPC分类号： H01L21/3225 , Y10S257/913 , Y10T428/21 , Y10T428/249969
摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.
摘要翻译：一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。该晶片具有前表面，后表面和在前表面和后表面之间的中心平面。在该过程中，对晶片进行热处理以形成晶格空位，空位形成在大部分硅中。然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到前表面的速率冷却，以产生具有空位浓度分布的晶片，其中峰密度在或者靠近中心平面，其浓度通常在晶片前表面的方向上减小。

6. 发明授权

US08969119B2 Processes for suppressing minority carrier lifetime degradation in silicon wafers 有权
标题翻译：抑制硅晶片中少数载流子寿命衰退的方法
公开(公告)号：US08969119B2
公开(公告)日：2015-03-03
申请号：US13486463
申请日：2012-06-01
申请人： Robert J. Falster , Vladimir V. Voronkov
发明人： Robert J. Falster , Vladimir V. Voronkov
IPC分类号： H01L31/18 , H01L21/322
CPC分类号： H01L29/16 , H01L21/3221 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.
摘要翻译：公开了抑制硅晶片中的少数载流子寿命劣化的方法。该方法包括骤冷冷却晶片以增加硅晶片中的纳米沉淀物的密度以及间隙原子被纳米沉淀物消耗的速率。

7. 发明申请

US20090004426A1 Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates 审中-公开
标题翻译：在重掺杂的单晶硅衬底中抑制氧沉淀
公开(公告)号：US20090004426A1
公开(公告)日：2009-01-01
申请号：US11771667
申请日：2007-06-29
申请人： Robert J. Falster , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
IPC分类号： B32B3/02 , C30B33/06
CPC分类号： H01L21/3225 , Y10T428/21
摘要： This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.
摘要翻译：本发明一般涉及一种通过将现有的氧簇和沉淀物溶解在衬底中来抑制具有重掺杂硅衬底和轻掺杂N掺杂硅外延层的外延硅晶片中的氧沉淀的方法。此外，在随后的氧沉淀热处理时，防止形成氧析出物。

8. 发明授权

US07105050B2 Method for the production of low defect density silicon 失效
标题翻译：生产低缺陷密度硅的方法
公开(公告)号：US07105050B2
公开(公告)日：2006-09-12
申请号：US11058885
申请日：2005-02-16
申请人： Vladimir V. Voronkov , Robert J. Falster , Mohsen Banan
发明人： Vladimir V. Voronkov , Robert J. Falster , Mohsen Banan
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , A61K31/427 , A61K31/513 , A61K31/675 , A61K31/7008 , A61K31/704 , C30B15/203 , C30B15/206
摘要： A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.
摘要翻译：根据Czochralski法制备硅单锭的方法。用于生长单晶硅锭的方法包括在晶体的恒定直径部分的生长期间控制（i）生长速度v，（ii）平均轴向温度梯度G <0> 在从固化到不低于约1325℃的温度的温度范围内，以最初在锭的恒定直径部分中产生一系列主要的固有点缺陷，包括空位主导区域和硅自填隙主导区域，沿着并且以允许硅自间隙原子径向扩散到侧表面并且轴向扩散到空位主导区域的速率从固化温度冷却区域，以减少每个区域中的固有点缺陷的浓度。

9. 发明授权

US06955718B2 Process for preparing a stabilized ideal oxygen precipitating silicon wafer 有权
标题翻译：制备稳定的理想氧沉淀硅晶片的方法
公开(公告)号：US06955718B2
公开(公告)日：2005-10-18
申请号：US10615127
申请日：2003-07-08
申请人： Robert J. Falster , Vladimir V. Voronkov
发明人： Robert J. Falster , Vladimir V. Voronkov
IPC分类号： C30B33/00 , C30B15/20
CPC分类号： C30B29/06 , C30B33/00
摘要： The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of stabilized oxygen precipitate nucleation centers therein. Specifically, the peak concentration is located in the wafer bulk and a precipitate-free zone extends inward from a surface.
摘要翻译：本发明涉及单晶Czochralski型硅晶片及其制备方法，其中稳定的氧沉淀物成核中心具有不均匀的分布。具体地，峰值浓度位于晶片体积中，并且无沉淀区域从表面向内延伸。

10. 发明授权

US06858307B2 Method for the production of low defect density silicon 失效
标题翻译：生产低缺陷密度硅的方法
公开(公告)号：US06858307B2
公开(公告)日：2005-02-22
申请号：US09972608
申请日：2001-10-05
申请人： Vladimir V. Vornokov , Robert J. Falster , Mohsen Banan
发明人： Vladimir V. Vornokov , Robert J. Falster , Mohsen Banan
IPC分类号： A61K31/427 , A61K31/513 , A61K31/675 , A61K31/7008 , A61K31/704 , C30B15/00 , C30B33/02 , C30B29/06
CPC分类号： C30B29/06 , A61K31/427 , A61K31/513 , A61K31/675 , A61K31/7008 , A61K31/704 , C30B15/203 , C30B15/206 , Y10T428/2973 , Y10T428/298
摘要： A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.
摘要翻译：根据Czochralski法制备硅单锭的方法。用于生长单晶硅锭的方法包括：在凝固的恒定直径部分的晶体生长过程中控制（i）生长速度v，（ii）平均轴向温度梯度G0，温度不低于约1325℃，以最初在锭的恒定直径部分中产生一系列主要的固有点缺陷，包括空位主导区域和硅自填隙主导区域，沿轴线交替，并且从固化温度以允许硅自间隙原子径向扩散到侧表面并且轴向扩散到空位主导区的速率，以减少每个区域内的固有点缺陷的浓度。

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