专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06793966B2 Chemical vapor deposition apparatus and method 有权
标题翻译：化学气相沉积装置及方法
公开(公告)号：US06793966B2
公开(公告)日：2004-09-21
申请号：US09950013
申请日：2001-09-10
申请人： Bruce M. Warnes , Andrew L. Purvis , Daniel L. Near
发明人： Bruce M. Warnes , Andrew L. Purvis , Daniel L. Near
IPC分类号： C23C1608
CPC分类号： C23C16/4557 , C23C16/4488
摘要： Chemical vapor deposition apparatus and method are provided with external metal halide gas generators that reduce leakage of air into the generators so as to improve efficiency of use of the metal charge residing in each generator.
摘要翻译：化学气相沉积装置和方法设置有外部金属卤化物气体发生器，其减少空气向发生器的泄漏，以提高驻留在每个发电机中的金属电荷的使用效率。

2. 发明授权

US06767582B1 Method of modifying source chemicals in an ald process 有权
标题翻译：在ald过程中修改源化学品的方法
公开(公告)号：US06767582B1
公开(公告)日：2004-07-27
申请号：US10110598
申请日：2002-04-11
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： C23C1608
CPC分类号： C30B29/38 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/4488 , C23C16/45525 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28568 , H01L21/76843 , H01L21/76877 , H01L2221/1078
摘要： This invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention transition metal source materials are reduced by vaporizing a metal source material, conducting the vaporized metal source material, into a reducing zone comprising a solid reducing agent maintained at an elevated temperature. Thereafter, the metal source material is contacted with the solid or liquid reducing agent in order to convert the source material into a reduced metal compound and reaction byproducts having a sufficiently high vapor pressure for transporting in gaseous form.
摘要翻译：本发明涉及一种用于修改ALD工艺中使用的源材料的方法，一种通过ALD工艺沉积过渡金属氮化物薄膜的方法和用于该工艺的设备。根据本发明，过渡金属源材料通过将金属源材料蒸发，将蒸发的金属源材料蒸发到包含保持在高温下的固体还原剂的还原区域而被还原。此后，金属源材料与固体或液体还原剂接触，以将源材料转化为还原金属化合物和具有足够高蒸汽压力的反应副产物，以便以气态形式输送。

3. 发明授权

US06475276B1 Production of elemental thin films using a boron-containing reducing agent 有权
标题翻译：使用含硼还原剂生产元素薄膜
公开(公告)号：US06475276B1
公开(公告)日：2002-11-05
申请号：US09687205
申请日：2000-10-13
申请人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C1608
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
摘要翻译：本发明一般涉及沉积元素薄膜。特别地，本发明涉及使用硼化合物作为还原剂通过原子层沉积（ALD）生长元素金属薄膜的方法。在优选实施方案中，该方法包括将至少一种金属源化合物和至少一种硼源化合物的气相脉冲引入到其中沉积有金属薄膜的基底的反应空间中。优选地，硼化合物能够将金属源化合物的吸附部分还原成其元电态。

4. 发明授权

US06623790B2 Method of adjusting the size of cooling holes of a gas turbine component 有权
标题翻译：调整燃气轮机部件的冷却孔尺寸的方法
公开(公告)号：US06623790B2
公开(公告)日：2003-09-23
申请号：US09867625
申请日：2001-05-31
申请人： John Fernihough , Markus Oehl
发明人： John Fernihough , Markus Oehl
IPC分类号： C23C1608
CPC分类号： F01D5/186 , B23P2700/06 , C23C16/045 , C25D7/04 , F05D2230/11 , F05D2230/90
摘要： A method for adjusting the size of cooling holes of a gas turbine component is disclosed in which the component is shielded with an easily removable and non- conductive shielding material without shielding the cooling holes themselves. The cooling holes are then coated by a galvanic process and the size of the cooling holes is restored to within manufacturing tolerances. The shielding material is removed and, subsequently, a heat treatment for securing a bonding of the metallic coating is applied.
摘要翻译：公开了一种用于调节燃气轮机部件的冷却孔尺寸的方法，其中部件用易于拆卸和非导电的屏蔽材料屏蔽，而不会屏蔽冷却孔本身。然后通过电镀工艺涂覆冷却孔，并将冷却孔的尺寸恢复到制造公差内。去除屏蔽材料，随后进行用于确保金属涂层的粘结的热处理。

5. 发明授权

US06387445B1 Tungsten layer forming method and laminate structure of tungsten layer 失效
标题翻译：钨层的钨层成型方法和叠层结构
公开(公告)号：US06387445B1
公开(公告)日：2002-05-14
申请号：US09646038
申请日：2000-09-13
申请人： Yasushi Aiba , Yukio Koike
发明人： Yasushi Aiba , Yukio Koike
IPC分类号： C23C1608
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28556 , H01L21/28568
摘要： A tungsten layer is formed on the surface of an object to be treated (e.g., a semiconductor wafer), supplying a process gas which includes a material gas of a tungsten fluoride (e.g., WF6) gas and a reducing gas (e.g., H2 gas) for reducing the material gas. In this case, an intermediate tungsten film forming step is carried out between a nuclear crystalline film forming step of forming a nuclear crystalline film of tungsten on the surface of the object and a main tungsten film forming step of forming a main tungsten film on the nuclear crystalline film. At the intermediate tungsten film forming step, an intermediate tungsten film is formed while the flow ratio of the material gas to the reducing gas is smaller than that at the main tungsten film forming step. Thus, the incubation time T2 after the deposition of the nuclear crystalline film is removed, so that it is possible to enhance the whole mean deposition rate and to improve the uniformity of the thickness between objects to be processed.
摘要翻译：在待处理物体的表面（例如，半导体晶片）上形成钨层，供给包括氟化钨（例如WF 6）气体和还原气体（例如，H 2气体）的原料气体的处理气体）用于减少原料气体。在这种情况下，中间钨膜形成步骤是在物体表面上形成钨的核晶体膜的核晶形成步骤和在核上形成主钨膜的主钨膜形成步骤之间进行的结晶膜。在中间钨膜形成步骤中，形成中间钨膜，同时原料气体与还原气体的流量比主钨膜形成步骤小。因此，去除沉积核晶体膜后的孵育时间T2，从而可以提高整个平均沉积速率并提高待处理物体之间厚度的均匀性。

6. 发明授权

US06194314B1 Process for chemical vapor deposition layer production on a semiconductor surface with absorbing protective gasses 失效
标题翻译：在具有吸收保护气体的半导体表面上生成化学气相沉积层的方法
公开(公告)号：US06194314B1
公开(公告)日：2001-02-27
申请号：US09019612
申请日：1998-02-06
申请人： Wolfram Karcher , Lutz Labs
发明人： Wolfram Karcher , Lutz Labs
IPC分类号： C23C1608
CPC分类号： H01L21/76838 , C23C16/0218 , C23C16/42 , C23C16/4405
摘要： In chemical gaseous phase deposition (CVD=Chemical Vapor Deposition), there is frequently the problem of there still being an aggressive gas in the reaction chamber from the preceding layer production process. The aggressive gas can be a remainder of a process gas used for layer production or it can be a remainder gas produced by the reaction of the process gasses. The aggressive gas can cause undesirable reactions on the surface of the semiconductor product, which damage the semiconductor product. A process for layer production on a surface includes supplying at least one protective gas to the surface before and/or during the heating of the surface to the reaction temperature. Through the use of the protective gas, on one hand the aggressive gas still remaining in the reaction chamber is thinned and on the other hand a part of the protective gas adsorbs onto the cold surface so that on the surface, preferably reactions of the aggressive gas with the protective gas occur and the surface layers themselves remain essentially undamaged.
摘要翻译：在化学气相沉积（CVD =化学气相沉积）中，常常存在来自前一层生产过程的反应室中仍然存在侵蚀性气体的问题。侵蚀性气体可以是用于层生产的工艺气体的剩余部分，或者其可以是通过工艺气体的反应产生的剩余气体。侵蚀性气体可能在半导体产品的表面上引起不期望的反应，这损害半导体产品。用于在表面上层生产的方法包括在将表面加热到反应温度之前和/或期间向表面供应至少一种保护气体。通过使用保护气体，一方面仍然残留在反应室中的侵蚀性气体变薄，另一方面，保护气体的一部分吸附到冷表面上，使得在表面上优选侵蚀性气体发生保护气体并且表面层本身保持基本上没有损坏。

7. 发明授权

US06544889B2 Method for tungsten chemical vapor deposition on a semiconductor substrate 有权
公开(公告)号：US06544889B2
公开(公告)日：2003-04-08
申请号：US09768151
申请日：2001-01-24
申请人： Hans Vercammen , Joris Baele
发明人： Hans Vercammen , Joris Baele
IPC分类号： C23C1608
CPC分类号： C23C16/14 , H01L21/28556 , H01L21/28568
摘要： This invention relates to a method for tungsten chemical vapor deposition on a semiconductor substrate, comprising positioning said substrate within a deposition chamber, heating said substrate and depositing under low pressure the tungsten on the substrate by contacting the latter with a mixture of gases flowing through the deposition chamber comprising tungsten hexafluoride (WF6), hydrogen (H2) and at least one carrier gas. The mixture of gases comprises also silane (SiH4) with such a flow rate that the flow ratio WF6/SiH4 is from 2.5 to 6, the flow rate of WF6 being from 30 to 60 sccm, while the pressure in the deposition chamber is maintained from 0.13 to 5.33 kPa (1 and 40 Torr).

8. 发明授权

US06465045B1 Low stress polysilicon film and method for producing same 失效
标题翻译：低应力多晶硅膜及其制造方法
公开(公告)号：US06465045B1
公开(公告)日：2002-10-15
申请号：US09691706
申请日：2000-10-18
申请人： Arthur H. Heuer , Harold Kahn , Jie Yang
发明人： Arthur H. Heuer , Harold Kahn , Jie Yang
IPC分类号： C23C1608
CPC分类号： H01L21/28525 , C23C16/24 , C23C16/44 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/0262 , Y10T428/12528 , Y10T428/12639 , Y10T428/12674
摘要： Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.
摘要翻译：公开了具有预定应力特性的多晶硅薄膜的多层组件和用于形成这种组件的技术。特别地，可以产生多晶硅薄膜的多层组件，其具有零的应力水平，或者基本如此。多层组件包括具有拉伸应力的至少一种构成薄膜和至少一种具有压应力的构成薄膜。形成多层组件的薄膜可以彼此紧邻地设置，而不需要在薄膜之间使用中间层。

9. 发明授权

US06319554B1 Method and apparatus for surface metallization 失效
标题翻译：表面金属化方法和装置
公开(公告)号：US06319554B1
公开(公告)日：2001-11-20
申请号：US09329893
申请日：1999-06-10
申请人： Govindarajan Natarajan , Robert W. Pasco
发明人： Govindarajan Natarajan , Robert W. Pasco
IPC分类号： C23C1608
CPC分类号： H05K3/24 , C23C16/08 , C23C16/44
摘要： The present invention relates generally to a CVD (Chemical Vapor Deposition) process where at least one source metal, such as, nickel (Ni) or alloys thereof, for example, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving the source metal, such as, refractory metal, for example, molybdenum, tungsten or alloys thereof, using at least one gaseous Iodide source, such as, an iodic fluid, for example, hydriodic acid gas. The source metal is securely held in place by at least one high strength inert material. The CVD of nickel or alloys thereof, on the surface of refractory metal, such as, molybdenum (Mo) or tungsten (W), where the nickel source is physically isolated from the refractory metal surface to be plated using at least one high strength inert material that is in physical floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof, and where the nickel source and the high strength inert material are embodied as a single bonded structure.
摘要翻译：本发明一般涉及一种CVD（化学气相沉积）方法，其中至少一种源金属例如镍（Ni）或其合金，例如Ni / Cu，Ni / Co沉积在金属表面上，能够使用至少一种碘化物源（例如碘酸液体，例如氢碘酸气体）接收源金属，例如难熔金属，例如钼，钨或其合金。源金属通过至少一种高强度惰性材料牢固地保持在适当位置。在难熔金属表面，例如钼（Mo）或钨（W）的镍或其合金的CVD，其中镍源使用至少一种高强度惰性物质从要镀覆的难熔金属表面物理隔离与需要涂覆有至少一层镍或其合金的难熔金属表面物理浮动接触的材料，以及其中镍源和高强度惰性材料被实施为单一结合结构的材料。

10. 发明授权

US06291014B1 Active element modified platinum aluminide diffusion coating and CVD coating method 有权
标题翻译：活性元素改性的铂铝化物扩散涂层和CVD涂层法
公开(公告)号：US06291014B1
公开(公告)日：2001-09-18
申请号：US09392766
申请日：1999-09-07
申请人： Bruce M. Warnes , Daniel L. Near , David C. Punola , William C. Basta
发明人： Bruce M. Warnes , Daniel L. Near , David C. Punola , William C. Basta
IPC分类号： C23C1608
CPC分类号： C23C28/321 , C23C10/02 , C23C10/28 , C23C16/08 , C23C28/325 , C23C28/345 , C23C28/3455 , Y02T50/67 , Y10S428/938 , Y10T428/1275 , Y10T428/12875 , Y10T428/12931
摘要： A CVD outwardly grown platinum aluminide diffusion coating on a nickel or cobalt base superalloy substrate wherein the platinum modified aluminide diffusion coating is modified to include silicon, hafnium, and optionally zirconium and/or other active elements (e.g. Ce, La, Y, etc.) each in a concentration of about 0.01 weight % to about 8 weight % of the outer additive (Ni,Pt)(Al,Si) layer of the coating. A particular coating includes about 0.01 weight % to less than 2 weight % of each of silicon, hafnium, and zirconium in the outer additive layer, preferably with a Hf/Si ratio less than about 1 and, when Zr also is present, a Hf+Zr/Si ratio of less than about 1. A coating microstructure is provided characterized by an inner diffusion zone or region adjacent the substrate and the outer additive (Ni,Pt)(Al,Si) layer including hafnium silicide second phase particles or regions dispersed throughout the outer additive layer of the coating.
摘要翻译：在镍或钴基超级合金基材上CVD外延生长的铂铝化物扩散涂层，其中铂改性的铝化物扩散涂层被修饰为包括硅，铪和任选的锆和/或其它活性元素（例如Ce，La，Y等）），其浓度为涂层的外添加剂（Ni，Pt）（Al，Si）层的约0.01重量％至约8重量％。特别的涂层在外添加层中包含约0.01重量％至小于2重量％的硅，铪和锆，优选Hf / Si比小于约1，当Zr也存在时，Hf + Zr / Si比小于约1.提供一种涂层微观结构，其特征在于与衬底相邻的内扩散区或区域，以及包括硅化铪第二相颗粒或区域的外添加剂（Ni，Pt）（Al，Si）分散在涂层的外部添加剂层中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式