专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06793966B2 Chemical vapor deposition apparatus and method 有权
标题翻译：化学气相沉积装置及方法
公开(公告)号：US06793966B2
公开(公告)日：2004-09-21
申请号：US09950013
申请日：2001-09-10
申请人： Bruce M. Warnes , Andrew L. Purvis , Daniel L. Near
发明人： Bruce M. Warnes , Andrew L. Purvis , Daniel L. Near
IPC分类号： C23C1608
CPC分类号： C23C16/4557 , C23C16/4488
摘要： Chemical vapor deposition apparatus and method are provided with external metal halide gas generators that reduce leakage of air into the generators so as to improve efficiency of use of the metal charge residing in each generator.
摘要翻译：化学气相沉积装置和方法设置有外部金属卤化物气体发生器，其减少空气向发生器的泄漏，以提高驻留在每个发电机中的金属电荷的使用效率。

2. 发明授权

US06767582B1 Method of modifying source chemicals in an ald process 有权
标题翻译：在ald过程中修改源化学品的方法
公开(公告)号：US06767582B1
公开(公告)日：2004-07-27
申请号：US10110598
申请日：2002-04-11
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： C23C1608
CPC分类号： C30B29/38 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/4488 , C23C16/45525 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28568 , H01L21/76843 , H01L21/76877 , H01L2221/1078
摘要： This invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention transition metal source materials are reduced by vaporizing a metal source material, conducting the vaporized metal source material, into a reducing zone comprising a solid reducing agent maintained at an elevated temperature. Thereafter, the metal source material is contacted with the solid or liquid reducing agent in order to convert the source material into a reduced metal compound and reaction byproducts having a sufficiently high vapor pressure for transporting in gaseous form.
摘要翻译：本发明涉及一种用于修改ALD工艺中使用的源材料的方法，一种通过ALD工艺沉积过渡金属氮化物薄膜的方法和用于该工艺的设备。根据本发明，过渡金属源材料通过将金属源材料蒸发，将蒸发的金属源材料蒸发到包含保持在高温下的固体还原剂的还原区域而被还原。此后，金属源材料与固体或液体还原剂接触，以将源材料转化为还原金属化合物和具有足够高蒸汽压力的反应副产物，以便以气态形式输送。

3. 发明授权

US06475276B1 Production of elemental thin films using a boron-containing reducing agent 有权
标题翻译：使用含硼还原剂生产元素薄膜
公开(公告)号：US06475276B1
公开(公告)日：2002-11-05
申请号：US09687205
申请日：2000-10-13
申请人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C1608
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
摘要翻译：本发明一般涉及沉积元素薄膜。特别地，本发明涉及使用硼化合物作为还原剂通过原子层沉积（ALD）生长元素金属薄膜的方法。在优选实施方案中，该方法包括将至少一种金属源化合物和至少一种硼源化合物的气相脉冲引入到其中沉积有金属薄膜的基底的反应空间中。优选地，硼化合物能够将金属源化合物的吸附部分还原成其元电态。

4. 发明授权

US06623790B2 Method of adjusting the size of cooling holes of a gas turbine component 有权
标题翻译：调整燃气轮机部件的冷却孔尺寸的方法
公开(公告)号：US06623790B2
公开(公告)日：2003-09-23
申请号：US09867625
申请日：2001-05-31
申请人： John Fernihough , Markus Oehl
发明人： John Fernihough , Markus Oehl
IPC分类号： C23C1608
CPC分类号： F01D5/186 , B23P2700/06 , C23C16/045 , C25D7/04 , F05D2230/11 , F05D2230/90
摘要： A method for adjusting the size of cooling holes of a gas turbine component is disclosed in which the component is shielded with an easily removable and non- conductive shielding material without shielding the cooling holes themselves. The cooling holes are then coated by a galvanic process and the size of the cooling holes is restored to within manufacturing tolerances. The shielding material is removed and, subsequently, a heat treatment for securing a bonding of the metallic coating is applied.
摘要翻译：公开了一种用于调节燃气轮机部件的冷却孔尺寸的方法，其中部件用易于拆卸和非导电的屏蔽材料屏蔽，而不会屏蔽冷却孔本身。然后通过电镀工艺涂覆冷却孔，并将冷却孔的尺寸恢复到制造公差内。去除屏蔽材料，随后进行用于确保金属涂层的粘结的热处理。

5. 发明授权

US06387445B1 Tungsten layer forming method and laminate structure of tungsten layer 失效
标题翻译：钨层的钨层成型方法和叠层结构
公开(公告)号：US06387445B1
公开(公告)日：2002-05-14
申请号：US09646038
申请日：2000-09-13
申请人： Yasushi Aiba , Yukio Koike
发明人： Yasushi Aiba , Yukio Koike
IPC分类号： C23C1608
CPC分类号： C23C16/0281 , C23C16/14 , H01L21/28556 , H01L21/28568
摘要： A tungsten layer is formed on the surface of an object to be treated (e.g., a semiconductor wafer), supplying a process gas which includes a material gas of a tungsten fluoride (e.g., WF6) gas and a reducing gas (e.g., H2 gas) for reducing the material gas. In this case, an intermediate tungsten film forming step is carried out between a nuclear crystalline film forming step of forming a nuclear crystalline film of tungsten on the surface of the object and a main tungsten film forming step of forming a main tungsten film on the nuclear crystalline film. At the intermediate tungsten film forming step, an intermediate tungsten film is formed while the flow ratio of the material gas to the reducing gas is smaller than that at the main tungsten film forming step. Thus, the incubation time T2 after the deposition of the nuclear crystalline film is removed, so that it is possible to enhance the whole mean deposition rate and to improve the uniformity of the thickness between objects to be processed.
摘要翻译：在待处理物体的表面（例如，半导体晶片）上形成钨层，供给包括氟化钨（例如WF 6）气体和还原气体（例如，H 2气体）的原料气体的处理气体）用于减少原料气体。在这种情况下，中间钨膜形成步骤是在物体表面上形成钨的核晶体膜的核晶形成步骤和在核上形成主钨膜的主钨膜形成步骤之间进行的结晶膜。在中间钨膜形成步骤中，形成中间钨膜，同时原料气体与还原气体的流量比主钨膜形成步骤小。因此，去除沉积核晶体膜后的孵育时间T2，从而可以提高整个平均沉积速率并提高待处理物体之间厚度的均匀性。

6. 发明授权

US06194314B1 Process for chemical vapor deposition layer production on a semiconductor surface with absorbing protective gasses 失效
标题翻译：在具有吸收保护气体的半导体表面上生成化学气相沉积层的方法
公开(公告)号：US06194314B1
公开(公告)日：2001-02-27
申请号：US09019612
申请日：1998-02-06
申请人： Wolfram Karcher , Lutz Labs
发明人： Wolfram Karcher , Lutz Labs
IPC分类号： C23C1608
CPC分类号： H01L21/76838 , C23C16/0218 , C23C16/42 , C23C16/4405
摘要： In chemical gaseous phase deposition (CVD=Chemical Vapor Deposition), there is frequently the problem of there still being an aggressive gas in the reaction chamber from the preceding layer production process. The aggressive gas can be a remainder of a process gas used for layer production or it can be a remainder gas produced by the reaction of the process gasses. The aggressive gas can cause undesirable reactions on the surface of the semiconductor product, which damage the semiconductor product. A process for layer production on a surface includes supplying at least one protective gas to the surface before and/or during the heating of the surface to the reaction temperature. Through the use of the protective gas, on one hand the aggressive gas still remaining in the reaction chamber is thinned and on the other hand a part of the protective gas adsorbs onto the cold surface so that on the surface, preferably reactions of the aggressive gas with the protective gas occur and the surface layers themselves remain essentially undamaged.
摘要翻译：在化学气相沉积（CVD =化学气相沉积）中，常常存在来自前一层生产过程的反应室中仍然存在侵蚀性气体的问题。侵蚀性气体可以是用于层生产的工艺气体的剩余部分，或者其可以是通过工艺气体的反应产生的剩余气体。侵蚀性气体可能在半导体产品的表面上引起不期望的反应，这损害半导体产品。用于在表面上层生产的方法包括在将表面加热到反应温度之前和/或期间向表面供应至少一种保护气体。通过使用保护气体，一方面仍然残留在反应室中的侵蚀性气体变薄，另一方面，保护气体的一部分吸附到冷表面上，使得在表面上优选侵蚀性气体发生保护气体并且表面层本身保持基本上没有损坏。

7. 发明授权

US06656540B2 Method for forming metallic film and apparatus for forming the same 有权
公开(公告)号：US06656540B2
公开(公告)日：2003-12-02
申请号：US09926624
申请日：2001-11-27
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C1608
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film. Specifically, the present invention relates to a method for the formation of a thin metal film which comprises the steps of feeding a chlorine-containing raw material gas 55 into an inlet vessel 11 having a perforated plate 12 made of Cu; converting the raw material gas 55 into a plasma; etching the perforated plate 12 with the raw material gas plasma to produce a precursor 13 composed of the Cu component contained in the perforated plate 12 and the chlorine contained in the raw material gas 55; converting hydrogen gas into a plasma; after discharging the precursor 13 from the inlet vessel 11, passing the precursor 13 through a rotating magnetic field so as to cause the precursor 13 to travel toward a substrate 15 in an accelerated manner; and passing the precursor 13 through the reducing gas plasma to remove chlorine from the precursor 13 and directing the resulting Cu ions onto the substrate 15 to form a thin Cu film 62 on the substrate 15, as well as an apparatus for carrying out this method.

8. 发明授权

US06616969B2 Apparatus and method for selectively coating internal and external surfaces of an airfoil 失效
标题翻译：用于选择性地涂覆翼型的内表面和外表面的装置和方法
公开(公告)号：US06616969B2
公开(公告)日：2003-09-09
申请号：US09929595
申请日：2001-08-14
申请人： Jeffrey A. Pfaendtner , Joseph D. Rigney , Nripendra N. Das , Ramgopal Darolia
发明人： Jeffrey A. Pfaendtner , Joseph D. Rigney , Nripendra N. Das , Ramgopal Darolia
IPC分类号： C23C1608
CPC分类号： C23C16/042 , C23C16/045 , Y02T50/67
摘要： A gas turbine airfoil has an external surface and an internal passage therethrough. The internal passage is selectively coated by providing a source of a flowable precursor coating material in contact with the internal passage of the airfoil, and providing a coating prevention structure overlying at least a portion of the external surface. The flowable precursor coating material is flowed from the source of the flowable precursor coating material and through the internal passage of the airfoil. The coating prevention structure prevents contact of the flowable precursor coating material with the external surface of the airfoil.
摘要翻译：燃气涡轮机翼型件具有外表面和穿过其的内部通道。通过提供与翼型件的内部通道接触的可流动的前体涂料的源，选择性地涂覆内部通道，并且提供覆盖在外表面的至少一部分上的防涂层结构。可流动的前体涂层材料从可流动的前体涂层材料的源头流过翼型件的内部通道。涂层防止结构防止可流动的前体涂层材料与翼型件的外表面的接触。

9. 发明授权

US06410432B1 CVD of integrated Ta and TaNx films from tantalum halide precursors 失效
标题翻译：来自卤化钽前体的集成Ta和TaNx膜的CVD
公开(公告)号：US06410432B1
公开(公告)日：2002-06-25
申请号：US09300632
申请日：1999-04-27
申请人： John J. Hautala , Johannes F. M. Westendorp
发明人： John J. Hautala , Johannes F. M. Westendorp
IPC分类号： C23C1608
CPC分类号： H01L21/76843 , C23C16/08 , C23C16/34
摘要： A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum/tantalum nitride (Ta/TaNx) bilayer films from inorganic tantalum pentahalide (TaX5) precursors and nitrogen is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated reaction chamber. The vapor is combined with a process gas to deposit a Ta film and a process gas containing nitrogen to deposit a TaNx film on a substrate that is heated to 300° C.-500° C. The deposited Ta/TaNx bilayer film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.
摘要翻译：描述了一种用于从无机钽五卤化物（TaX5）前体和氮沉积高质量保形钽/氮化钽（Ta / TaNx）双层膜的化学气相沉积（CVD）方法。无机卤化钽前体是五氟化钽（TaF5），五氯化钽（TaCl5）和五溴化钽（TaBr5）。将TaX5蒸气输送到加热的反应室中。将蒸气与处理气体结合以沉积Ta膜和含有氮的工艺气体，以将TaNx膜沉积在加热至300℃-500℃的基底上。沉积的Ta / TaNx双层膜可用于包含铜膜的集成电路，特别是在小高宽比特征中。这些膜的高共形性优于PVD沉积的膜。

10. 发明授权

US06180170B2 Device and method for preparing and/or coating the surfaces of hollow construction elements 失效
标题翻译：用于制备和/或涂覆中空构造元件表面的装置和方法
公开(公告)号：US06180170B2
公开(公告)日：2001-01-30
申请号：US09125655
申请日：1998-08-21
申请人： Valentin Grossmann , Horst Pillhoefer , Martin Thoma
发明人： Valentin Grossmann , Horst Pillhoefer , Martin Thoma
IPC分类号： C23C1608
CPC分类号： C23C10/06 , C23C10/48 , Y10S118/10 , Y10S118/11
摘要： In a method for preparing and/or coating the surfaces of metallic hollow structural elements that have at least two connection openings between their outer and inner surfaces, first and second reaction gas mixtures (I, II) are prepared by reaction gas sources for treating the outer and inner surfaces of the hollow structural elements. The first reaction gas mixture (I) is guided over the outer surfaces and thereafter over the inner surfaces of the structural elements, and then the second reaction gas mixture (II) is guided over the inner surfaces and thereafter over the outer surfaces of the structural elements. An apparatus for carrying out the method includes a reaction vessel enclosing an outer reaction space, a central holding pipe arranged in the reaction vessel and enclosing an inner space, and hollow support arms removably attached on the holding pipe to extend radially outwardly therefrom. Each structural element is mounted on a hollow support arm so that one of the connection openings communicates with the inner space through the hollow support arm and the other one of the connection openings communicates with the outer reaction space.
摘要翻译：在用于制备和/或涂覆在其外表面和内表面之间具有至少两个连接开口的金属中空结构元件的表面的方法中，第一和第二反应气体混合物（I，II）由反应气体源制备，用于处理中空结构元件的外表面和内表面。第一反应气体混合物（I）被引导在外表面上，然后在结构元件的内表面上引导，然后第二反应气体混合物（II）被引导到内表面上，然后在结构的外表面上引导元素。用于执行该方法的装置包括：包围外部反应空间的反应容器，布置在反应容器中并包围内部空间的中央保持管，以及可拆卸地附接在保持管上的径向向外延伸的中空支撑臂。每个结构元件安装在中空支撑臂上，使得一个连接开口通过中空支撑臂与内部空间连通，另一个连接开口与外部反应空间连通。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式