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1. 发明授权

US08313962B2 Method for attaching optical components onto silicon-based integrated circuits 有权
标题翻译：将光学部件安装在硅基集成电路上的方法
公开(公告)号：US08313962B2
公开(公告)日：2012-11-20
申请号：US12951667
申请日：2010-11-22
申请人： James A. Lott , Nikolai Ledentsov , Vitaly Shchukin
发明人： James A. Lott , Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01L33/00 , H01L31/0232
CPC分类号： H01L33/60 , G02B6/4214 , G02B6/43 , H01L21/6835 , H01L24/19 , H01L24/82 , H01L24/95 , H01L25/16 , H01L27/1446 , H01L31/028 , H01L33/48 , H01L2224/04105 , H01L2224/24226 , H01L2224/24227 , H01L2224/73267 , H01L2224/92244 , H01L2924/01019 , H01L2924/0102 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01S5/0217 , H01S5/02248 , H01S5/02276 , H01S5/18302 , H01S5/18305 , H01S5/18311 , H01S5/18394 , H01S5/423 , H01S2301/176 , H01L2924/00
摘要： Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A specific sacrificial or removable separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate. It is possible to place and interconnect VCSELs directly within the physical structure of the integrated circuit, thus greatly reducing the power requirements, the distance of interconnecting lines, and the resultant operational speed. A variation allows the selective placement of groups of physically-connected VCSELs, and the collection and placement of large numbers of fabricated VCSELs onto foreign substrates using a vacuum plating tool.
摘要翻译：垂直腔表面发射激光器（VCSEL）和/或其他光学器件组件与硅基集成电路的混合集成。在化合物半导体晶片的表面上处理多个单独的VCSEL或光学器件，然后转移到硅基集成电路。在光学部件和母体半导体衬底之间采用特定的牺牲或可移除的分离层。将光学部件转移到载体基板之后，消除牺牲层或分离层并同时去除母体基底。之后是将光学部件连接到一个集成电路的表面，或者嵌入到集成电路的上层中，然后从载体衬底释放部件。可以将VCSEL直接放置在集成电路的物理结构中，从而大大降低了功率需求，互连线的距离以及最终的操作速度。变体允许选择性地放置物理连接的VCSEL的组，并且使用真空电镀工具将大量制造的VCSELs收集和放置到异质衬底上。

2. 发明申请

US20060171440A1 Apparatus for generating improved laser beam 审中-公开
标题翻译：用于产生改进的激光束的装置
公开(公告)号：US20060171440A1
公开(公告)日：2006-08-03
申请号：US10548373
申请日：2004-03-14
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01S3/08
CPC分类号： G02B5/26 , G02B5/285 , H01S5/028 , H01S5/0281 , H01S5/0285 , H01S5/0425 , H01S5/0655 , H01S5/105 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/2027 , H01S5/32341
摘要： A selective reflector, for selectively preventing reflection of light passing therethrough. The selective reflector comprising at least one layer characterized by an angle-dependent reflectivity function. The angle-dependent reflectivity function being decreasing upon at least one interval of increasing impinging angle of the light on a surface of the at least one layer, such that when said impinging angle is within a predetermined range, the reflection of light is substantially prevented.
摘要翻译：选择性反射器，用于选择性地防止穿过其中的光的反射。所述选择反射器包括至少一层，其特征在于角度反射函数。所述角度反射率函数在所述至少一层的表面上的光的增加的角度的至少一个间隔的范围内减小，使得当所述入射角在预定范围内时，基本上防止了光的反射。

3. 发明申请

US20050040410A1 Tilted cavity semiconductor optoelectronic device and method of making same 审中-公开
标题翻译：倾斜腔半导体光电器件及其制造方法
公开(公告)号：US20050040410A1
公开(公告)日：2005-02-24
申请号：US10943044
申请日：2004-09-16
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01L33/10 , H01S5/00 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/0625 , H01S5/10 , H01S5/14 , H01S5/16 , H01S5/18 , H01S5/183 , H01S5/20 , H01S5/223 , H01S5/50 , H01L27/15 , H01L33/00
CPC分类号： H01L33/105 , H01S5/0028 , H01S5/0265 , H01S5/028 , H01S5/0425 , H01S5/06253 , H01S5/0654 , H01S5/1071 , H01S5/1085 , H01S5/141 , H01S5/162 , H01S5/18 , H01S5/183 , H01S5/2004 , H01S5/2027 , H01S5/204 , H01S5/2231 , H01S5/50
摘要： A novel class of semiconductor light-emitting devices, or “tilted cavity light-emitting devices” is disclosed. The device includes at least one active element, generally placed within a cavity, with an active region generating an optical gain by injection of a current and two mirrors. The device generates optical modes that propagate in directions, which are tilted with respect to both the p-n junction plane and the direction normal to this plane. A light-emitting diode is also disclosed, where the cavity and the mirrors are designed such that transmission of generated optical power within a certain spectral range and within a certain interval of angles to the substrate is minimized. Transmission of optical power within a certain spectral range, which corresponds to the emission range of the light-emitting active medium and within a certain interval of angles out of the device, is optimized to achieve a required output power level.
摘要翻译：公开了一种新型的半导体发光器件或“倾斜腔体发光器件”。该器件包括通常放置在空腔内的至少一个有源元件，其中有源区域通过注入电流和两个反射镜而产生光学增益。该装置产生在相对于p-n结平面和垂直于该平面的方向倾斜的方向上传播的光学模式。还公开了一种发光二极管，其中空腔和反射镜被设计成使得在特定光谱范围内并且在与衬底的一定角度范围内的所产生的光功率的传输最小化。对于与发光有源介质的发射范围相对应的特定光谱范围内的光功率在设备外的一定角度间隔内的光功率的传输被优化以实现所需的输出功率水平。

4. 发明授权

US08290016B2 Optoelectric device for high-speed data transfer with electrooptically tunable stopband edge of a bragg-reflector 有权
标题翻译：用于高速数据传输的光电装置，具有布拉格反射器的电光可调阻带边缘
公开(公告)号：US08290016B2
公开(公告)日：2012-10-16
申请号：US12509775
申请日：2009-07-27
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01S3/11 , H01S5/183
CPC分类号： H01S5/0601 , H01L27/15 , H01L33/105 , H01S5/0014 , H01S5/0265 , H01S5/0607 , H01S5/1221 , H01S5/18302 , H01S5/1833 , H01S5/2027
摘要： A device contains at least one wavelength-tunable multilayer interference reflector controlled by an applied voltage and at least one cavity. The stopband edge wavelength of the wavelength-tunable multilayer interference reflector is preferably electrooptically tuned using the quantum confined Stark effect in the vicinity of the cavity mode (or a composite cavity mode), resulting in a modulated transmittance of the multilayer interference reflector. A light-emitting medium is preferably introduced in the cavity or in one of the cavities permitting the optoelectronic device to work as an intensity-modulated light-emitting diode or diode laser by applying an injection current. The device preferably contains at least three electric contacts to apply forward or reverse bias and may operate as a vertical cavity surface-emitting light emitter or modulator or as an edge-emitting light emitter or modulator. Using a multilayer interference reflector containing tunable section allows also obtaining a wavelength-tunable laser or a wavelength-tunable resonant cavity photodetector in the case where the optical field profile in the active cavity or cavities is affected by the stopband wavelength shift. Adding additional modulator sections enables applications in semiconductor optical amplifiers, frequency converters or lock-in optical amplifiers.
摘要翻译：装置包含由施加的电压和至少一个空腔控制的至少一个波长可调多层干涉反射器。波长可调多层干涉反射器的阻带边缘波长优选地在腔模式（或复合腔模式）附近使用量子限制斯塔克效应进行电光学调谐，导致多层干涉反射器的调制透射率。发光介质优选地引入空腔中或其中一个空腔中，允许光电子器件通过施加注入电流作为强度调制发光二极管或二极管激光器工作。该装置优选地包含至少三个电触点以施加正向或反向偏压，并且可以作为垂直腔表面发射光发射器或调制器或作为边缘发射光发射器或调制器来操作。使用包含可调谐部分的多层干涉反射镜还允许在有源腔或空腔中的光场分布受到阻带波长偏移的影响的情况下获得波长可调激光器或波长可调谐谐振腔光电探测器。添加额外的调制器部分可应用于半导体光放大器，变频器或锁定光放大器。

5. 发明申请

US20110076026A1 Method for encoding and decoding of optical signals 有权
标题翻译：光信号编码和解码方法
公开(公告)号：US20110076026A1
公开(公告)日：2011-03-31
申请号：US12923465
申请日：2010-09-23
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H04B10/00
CPC分类号： H04B10/524 , H04B10/66 , H04B2210/517
摘要： The present invention refers to a method for robust multi-level encoding of optical signals. The method uses a transmitter that transforms electric signals into optical signals and a receiver capable to transform optical signals into electric signals. The transmitter is capable to generate optical pulses having at least two different durations. The amplitudes of the pulses are preferably close to each other. The transmitter is fast, and the receiver is slow such that the response time of the receiver exceeds at least the shortest of the durations of the optical pulses. Then the receiver effectively integrates the optical signal and generates the electric signal having a larger amplitude when the optical signal has a larger duration. Thus, the method converts the modulation in pulse duration into the modulation in signal amplitude. In different embodiments of the present invention, the transmitter can be realized by a light-emitting diode, superluminescent light-emitting diode, or a diode laser. The receiver can be realized by a p-i-n diode, by a resonant cavity photodetector, or by an avalanche photodiode.
摘要翻译：本发明涉及用于光信号的鲁棒多级编码的方法。该方法使用将电信号转换为光信号的发射机和能够将光信号转换成电信号的接收机。发射机能够产生具有至少两个不同持续时间的光脉冲。脉冲的振幅优选彼此接近。发射机是快速的，并且接收机慢，使得接收机的响应时间至少超过光脉冲持续时间的最短时间。然后，当光信号具有较大持续时间时，接收器有效地集成光信号并产生振幅较大的电信号。因此，该方法将脉冲宽度的调制转换为信号幅度的调制。在本发明的不同实施例中，发射机可以通过发光二极管，超发光发光二极管或二极管激光器实现。接收机可以由p-i-n二极管，谐振腔光电检测器或雪崩光电二极管实现。

6. 发明申请

US20100278201A1 WAVELENGTH DIVISION MULTIPLEXING SYSTEM 有权
标题翻译：波长段多路复用系统
公开(公告)号：US20100278201A1
公开(公告)日：2010-11-04
申请号：US12828773
申请日：2010-07-01
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01S3/10
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/02325 , H01L31/147 , H01S5/0265 , H04J14/02
摘要： A wavelength division multiplexing system has an array of wavelength-tunable lasers with at least two wavelength-tunable lasers emitting laser light at mutually different wavelengths, a first diffraction grating, an optical fiber, a second diffraction grating, and an array of photodetectors. The laser light emitted by the different wavelength-tunable lasers wavelengths impinges upon the first diffraction grating where it is reflected so as to impinge on an input end of the optical fiber. The light then propagates in the optical fiber and comes out from an output end of the optical fiber. Then the laser light having at least two different wavelengths further impinges on a second diffraction grating, whereupon it is reflected such that laser light having a first wavelength impinges on a first photodetector, and laser light having a second wavelength impinges on a second photodetector, which is different from the first photodetector.
摘要翻译：波分多路复用系统具有波长可调谐激光器阵列，其具有至少两个在相互不同波长发射激光的波长可调激光器，第一衍射光栅，光纤，第二衍射光栅和光电检测器阵列。由不同波长可调激光器波长发射的激光照射在第一衍射光栅上，在该衍射光栅被反射，以便撞击光纤的输入端。光然后在光纤中传播并从光纤的输出端出来。然后具有至少两个不同波长的激光进一步撞击在第二衍射光栅上，于是其被反射，使得具有第一波长的激光照射在第一光电检测器上，并且具有第二波长的激光照射在第二光电检测器上，与第一光电检测器不同。

7. 发明授权

US07772615B2 Anti stark electrooptic medium and electrooptically modulated optoelectronic device based thereupon 有权
标题翻译：基于此的抗电泳介质和电光调制光电器件
公开(公告)号：US07772615B2
公开(公告)日：2010-08-10
申请号：US12187721
申请日：2008-08-07
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01L31/00 , H01S3/10
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/02325 , H01L31/147 , H01S5/0265 , H04J14/02
摘要： Semiconductor electrooptic medium shows behavior different from a medium based on quantum confined Stark Effect. A preferred embodiment has a type-II heterojunction, selected such, that, in zero electric field, an electron and a hole are localized on the opposite sides of the heterojunction having a negligible or very small overlap of the wave functions, and correspondingly, a zero or a very small exciton oscillator strength. Applying an electric field results in squeezing of the wave functions to the heterojunction which strongly increases the overlap of the electron and the hole wave functions, resulting in a strong increase of the exciton oscillator strength. Another embodiment of the novel electrooptic medium includes a heterojunction between a layer and a superlattice, wherein an electron and a hole in the zero electric field are localized on the opposite sides of the heterojunction, the latter being effectively a type-II heterojunction. Yet another embodiment has a heterojunction between two superlattices, wherein an electron and a hole in a zero electric field are localized on the opposite sides of the heterojunction, the latter operating effectively as a type-II heterojunction.
摘要翻译：半导体电光介质表现出与基于量子限制斯塔克效应的介质不同的行为。优选实施例具有II型异质结，其选择为：在零电场中，电子和空穴位于具有可忽略或非常小的波函数重叠的异质结的相对侧上，相应地，零或非常小的激子振子强度。施加电场导致对异质结的波函数的挤压，这强烈地增加了电子和空穴波函数的重叠，导致激子振子强度的强烈增加。新型电光介质的另一实施例包括层与超晶格之间的异质结，其中零电场中的电子和空穴位于异质结的相对侧，后者实际上是II型异质结。另一个实施例在两个超晶格之间具有异质结，其中电场和零电场中的空穴位于异质结的相对侧，后者有效地作为II型异质结起作用。

8. 发明授权

US07583712B2 Optoelectronic device and method of making same 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US07583712B2
公开(公告)日：2009-09-01
申请号：US11648551
申请日：2007-01-03
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01S3/13
CPC分类号： H01S5/183 , G02F2001/3542 , H01L33/105 , H01S5/005 , H01S5/0092 , H01S5/0421 , H01S5/0425 , H01S5/1021 , H01S5/1032 , H01S5/1035 , H01S5/1096 , H01S5/14 , H01S5/18305 , H01S5/2027
摘要： A light emitting device is disclosed that emits light from the surface in a broad spectral range and in a broad range of angles tilted with respect to the direction normal to the exit surface. An apparatus for generating wavelength-stabilized light is formed of a light-emitting device, an external cavity and at least one external mirror. Light emitted by the light-emitting device at a certain preselected angle, propagates through the external cavity, impinges on the external mirror and is reflected back. Light emitted at other angles does not impinge on the external mirror. Thus, a feedback occurs only for the light emitted at a preselected angle. Light impinged on the external mirror and reflected back undergoes interference with the emitted light. The interference can be constructive or destructive. Constructive interference results in a positive feedback. The positive feedback occurs, if light emitted by the light-emitting device is reflected back and reaches the active region in phase, i.e. if the phase matching between emitted and reflected light waves occurs. The positive feedback conditions are met at one or a few selected wavelengths within the luminescence spectrum of the active region. Then the apparatus generates wavelength-stabilized light. In different embodiments, an apparatus may operate as a wavelength-stabilized light-emitting diode, a wavelength-stabilized superluminescent light-emitting diode, or a wavelength-stabilized laser.Various embodiments are possible which are distinguished in a way of optical coupling between a light-emitting device and an external mirror. The coupling can be realized via the far-field zone of the light emitted by the light-emitting device, via the near-field zone, or via a single epitaxial structure.An apparatus for the frequency conversion is disclosed further comprising a non-linear crystal located within the external cavity.
摘要翻译：公开了一种发光器件，其在宽光谱范围内和在相对于垂直于出射表面的方向倾斜的宽范围的角度上从表面发射光。用于产生波长稳定的光的装置由发光装置，外部空腔和至少一个外部反射镜形成。由发光器件以一定的预选角度发射的光通过外部空腔传播，撞击在外部反射镜上并被反射回来。在其他角度发射的光不会撞击到外部镜子上。因此，反馈仅针对以预选角度发射的光发生。撞在外部反射镜上并反射回来的光受到发射光的干扰。干扰可能是建设性的或破坏性的。建设性干扰导致积极的反馈。如果由发光装置发出的光被反射并且相位到达有源区域，即发射和反射光波之间的相位匹配发生，则发生正反馈。在有效区域的发光光谱内的一个或几个选定波长处满足正反馈条件。然后该装置产生波长稳定的光。在不同的实施例中，装置可以作为波长稳定的发光二极管，波长稳定的超发光发光二极管或波长稳定的激光器工作。各种实施例是可能的，其以发光装置和外部反射镜之间的光耦合的方式来区分。耦合可以通过由发光装置发射的光的远场区域，经由近场区域，或经由单个外延结构实现。公开了一种用于频率转换的装置，还包括位于外部空腔内的非线性晶体。

9. 发明授权

US06611539B2 Wavelength-tunable vertical cavity surface emitting laser and method of making same 有权
公开(公告)号：US06611539B2
公开(公告)日：2003-08-26
申请号：US09867167
申请日：2001-05-29
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01S310
CPC分类号： H01S5/18302 , H01S5/0264 , H01S5/06206 , H01S5/1833 , H01S5/18341
摘要： A wavelength tunable semiconductor vertical cavity surface emitting laser which includes at least one active element including an active layer generating an optical gain by injection of a current, and at least one phase control element, and mirrors. The phase control element contains a modulator exhibiting a strong narrow optical absorption peak on a short wavelength side from the wavelength of the laser generation. The wavelength control is realized by using a position-dependent electro-optical effect. If a reverse bias is applied, the absorption maximum is shifted to longer wavelengths due to the Stark effect. If a forward bias is applied, a current is injected and results in the bleaching and reduction of the peak absorption. In both cases a strong modulation of the refractive index in the phase control element occurs. The effect tunes the wavelength of the cavity mode, and the sign and the value of the wavelength shift are defined by the position of the modulator. Two phase control cascades can be implemented into the laser, one of which shifts the wavelength of the emitted light to larger values, and the other shifts the wavelength of the emitted light to smaller values. A power equalizing element can be used in such laser allowing either to maintain the constant output power at different emission wavelengths or to realize an independent frequency and amplitude modulation. A photodetecting element can be implemented in the laser allowing calibration of the laser for all operations.

10. 发明授权

US07369583B2 Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer 有权
标题翻译：电光波长可调共振腔光电器件，用于高速数据传输
公开(公告)号：US07369583B2
公开(公告)日：2008-05-06
申请号：US11144482
申请日：2005-06-02
申请人： Nikolai Ledentsov , Vitaly Shchukin
发明人： Nikolai Ledentsov , Vitaly Shchukin
IPC分类号： H01S3/10
CPC分类号： H01S5/18302 , G02B5/28 , H01S5/0078 , H01S5/0607 , H01S5/1021 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/2027
摘要： A device contains at least one wavelength-tunable element controlled by an applied voltage and at least two resonant cavities, where the resonant wavelength of the tunable element is preferably elecrooptically tuned using the quantum confined Stark effect around the resonant wavelength of the other cavity or cavities, resulting in a modulated transmittance of the system. A light-emitting medium is preferably introduced into one of the cavities, permitting the optoelectronic device to work as an intensity-modulated light-emitting diode or diode laser by applying an injection current. The device preferably contains at least three electric contacts to apply a forward or a reverse bias and may operate as a vertical cavity surface emitting light-emitter or modulator or as a tilted cavity light emitter or modulator. Adding a few modulator sections enables applications in semiconductor optical amplifiers, frequency converters or lock-in optical amplifiers.
摘要翻译：器件包含由施加的电压和至少两个谐振腔控制的至少一个波长可调谐元件，其中可调谐元件的谐振波长优选地使用围绕另一腔或腔的谐振波长的量子限制斯塔克效应进行电光学调谐，导致系统的调制透射率。优选地，将发光介质引入到一个空腔中，使得光电子器件通过施加注入电流而作为强度调制的发光二极管或二极管激光器工作。该装置优选地包含至少三个电触点以施加正向或反向偏压，并且可以作为发射发光体或调制器的垂直腔表面或者作为倾斜腔光发射器或调制器来操作。增加一些调制器部分可以应用于半导体光放大器，变频器或锁定光放大器。

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