会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Silicon carbide semiconductor device
    • 碳化硅半导体器件
    • US09240451B2
    • 2016-01-19
    • US14485572
    • 2014-09-12
    • FUJI ELECTRIC CO., LTD.
    • Fumikazu Imai
    • H01L27/095H01L29/47H01L21/00H01L21/338H01L29/16H01L29/872H01L29/66H01L29/06H01L21/04H01L29/40H01L29/45H01L29/04
    • H01L29/1608H01L21/0495H01L29/045H01L29/0619H01L29/401H01L29/45H01L29/47H01L29/6606H01L29/66227H01L29/872
    • A silicon carbide semiconductor device includes a low-concentration n-type drift layer deposited on a silicon carbide substrate to form a semiconductor substrate. A first front surface metal layer, which forms a Schottky contact with the semiconductor substrate, is formed on a front surface of the semiconductor substrate. An outer circumferential end of the first front surface metal layer extends on an interlayer insulating film which covers an edge portion. A second front surface metal layer which forms a front surface electrode is formed on the first front surface metal layer. When a portion of the second front surface metal layer is formed by dry etching, the entire first front surface metal layer, which will be Schottky contact metal, is covered with the second front surface metal layer. Thus, generation of an etching residue is prevented and a device with a front surface electrode structure with high reliability is provided.
    • 碳化硅半导体器件包括沉积在碳化硅衬底上以形成半导体衬底的低浓度n型漂移层。 与半导体衬底形成肖特基接触的第一表面金属层形成在半导体衬底的前表面上。 第一前表面金属层的外周端在覆盖边缘部分的层间绝缘膜上延伸。 形成前表面电极的第二前表面金属层形成在第一前表面金属层上。 当通过干法蚀刻形成第二前表面金属层的一部分时,将第二前表面金属层覆盖作为肖特基接触金属的整个第一前表面金属层。 因此,防止产生蚀刻残渣,并提供具有高可靠性的具有前表面电极结构的器件。
    • 7. 发明授权
    • Electronic component capable of negative dynamic resistance
    • 具有负动态电阻的电子元件
    • US5465001A
    • 1995-11-07
    • US178574
    • 1994-01-07
    • Tomasz SkotnickiGerard Merckel
    • Tomasz SkotnickiGerard Merckel
    • H01L21/822H01L21/33H01L21/8249H01L27/04H01L27/06H01L29/66H01L29/732H01L29/739H01L29/70H01L29/73
    • H01L29/66227H01L21/8249H01L29/732H01L29/739Y10S257/90
    • The semiconductor electronic component comprises, within a semiconductor substrate (3), a first active region (2,4) having a first type of conductivity (n, n.sup.++), and a second active region (10), having a second type of conductivity (p, p.sup.++), opposite that of the first type, located between the first active region (2) and the upper face (5) of the substrate. A projecting region (6), containing a third active region (7, 8) having the first type of conductivity (n.sup.+, n.sup.++) and surmounting a first part (10a) of the second active region, is provided on the upper face of the substrate. Metallizations (13, 14, 15) are respectively located in contact with the three active regions (4, 10e, 7). The second active region includes a depletable semiconductor zone (Z) extending outside the first part (10a) of the second active region, and between the first active region (2) and the upper face (5) of the substrate. Depletion means (11; 213b, 209b, 211), located in the immediate vicinity of this depletable zone (Z) and suitable for depleting the said depletable zone under the action of a selected bias voltage, are also provided.
    • 半导体电子部件包括在半导体衬底(3)内具有第一导电类型(n,n ++)的第一有源区(2,4)和具有第二类导电性的第二有源区(10) (p,p ++)与位于第一有源区域(2)和衬底的上表面(5)之间的与第一类型相反的方向。 包含具有第一类型导电性(n +,n + +)并覆盖第二活性区域的第一部分(10a)的第三有源区域(7,8)的突出区域(6)设置在第二有源区域 基质。 金属化(13,14,15)分别与三个有源区域(4,10e,7)接触。 第二有源区包括延伸到第二有源区的第一部分(10a)外部以及在第一有源区(2)和衬底的上表面(5)之间的可消耗的半导体区(Z)。 也提供位于该可消耗区域(Z)附近并且适合于在选定的偏置电压的作用下耗尽所述可消耗区域的消耗装置(11; 213b,209b,211)。