发明申请
US20180197719A1 METHOD OF PROCESSING A SUBSTRATE USING AN ION BEAM AND APPARATUS FOR PERFORMING THE SAME
审中-公开
基本信息:
- 专利标题： METHOD OF PROCESSING A SUBSTRATE USING AN ION BEAM AND APPARATUS FOR PERFORMING THE SAME
- 申请号：US15606025 申请日：2017-05-26
- 公开(公告)号：US20180197719A1 公开(公告)日：2018-07-12
- 发明人： Yil-Hyung Lee , Yoo-Chul Kong , Jong-Kyu Kim , Seok-Woo Nam , Jong-Soon Park , Kyoung-Sub Shin
- 申请人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2017-0002342 20170106
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01J37/34 ; C23C14/34 ; C23C14/50
摘要：
In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.