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1. 发明申请

US20090242807A1 CORRECTING SUBSTRATE FOR CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS 有权
标题翻译：修正粒子束光刻机的校正基板
公开(公告)号：US20090242807A1
公开(公告)日：2009-10-01
申请号：US12408212
申请日：2009-03-20
申请人： Kaoru TSURUTA , Takashi KAMIKUBO , Rieko NISHIMURA , Shusuke YOSHITAKE , Shuichi TAMAMUSHI
发明人： Kaoru TSURUTA , Takashi KAMIKUBO , Rieko NISHIMURA , Shusuke YOSHITAKE , Shuichi TAMAMUSHI
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/30444
摘要： A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.
摘要翻译：用于带电粒子束光刻设备的校正衬底包括使用热膨胀低于氧化硅（SiO 2）材料的热膨胀材料的低热膨胀材料的衬底体; 布置在所述基板上方的第一导电膜; 以及选择性地布置在所述第一导电膜上并具有高于所述第一导电膜的反射率的第二导电膜，其中所述低热膨胀材料暴露在所述校正衬底的后表面上。

2. 发明申请

US20030085352A1 Method and apparatus for scanned instrument calibration 有权
标题翻译：用于扫描仪器校准的方法和装置
公开(公告)号：US20030085352A1
公开(公告)日：2003-05-08
申请号：US10186206
申请日：2002-06-27
发明人： Henri J. Lezec , Christian R. Musil
IPC分类号： G21K007/00 , G01N023/00
CPC分类号： G01N23/225 , H01J2237/28 , H01J2237/2826 , H01J2237/30444 , H01J2237/31749
摘要： Methods and apparatus for calibration of a scanned beam system are provided by sampling a calibration specimen containing an array of targets with a spacing between samples that is greater than the spacing between targets in the array and forming an image from the samples to reduce calibration specimen degradation and to magnify calibration errors to enable very fine calibration of the scanned beam system.
摘要翻译：用于校准扫描束系统的方法和装置通过对包含靶阵列的校准样本进行取样来提供，样本阵列之间的间距大于阵列中靶标之间的间距，并从样品中形成图像以减少校准样品降解并放大校准误差，以便对扫描光束系统进行非常精确的校准。

3. 发明授权

US07834997B2 Standard component for calibration and calibration method using it and electro beam system 有权
标题翻译：标准组件用于校准和校准方法及电子束系统
公开(公告)号：US07834997B2
公开(公告)日：2010-11-16
申请号：US11744906
申请日：2007-05-07
申请人： Yoshinori Nakayama
发明人： Yoshinori Nakayama
IPC分类号： G01J1/10
CPC分类号： H01J37/28 , G03F1/20 , H01J37/20 , H01J37/244 , H01J37/3045 , H01J2237/24578 , H01J2237/24592 , H01J2237/2816 , H01J2237/2817 , H01J2237/2826 , H01J2237/30444
摘要： The positions of diffraction gratings used for calibration can be checked easily by arranging marks near the diffraction gratings, the marks indicating the coordinate positions of the diffraction gratings. Dummy patterns including a pattern of cross marks are arranged around the array of the diffraction gratings. Consequently, a uniform diffraction grating pattern is accomplished in which the proximity effect is uniform across the diffraction grating array. Furthermore, cross marks can be disposed adjacent to the diffraction grating array. Therefore, the diffraction gratings can be placed in position and calibrated accurately and easily by using a standard component capable of realizing accurate positioning of the diffraction gratings. Hence, accurate metrology calibration coping with the next generation of semiconductor lithography technology can be accomplished.
摘要翻译：通过在衍射光栅附近设置标记，标记表示衍射光栅的坐标位置，可以容易地检查用于校准的衍射光栅的位置。包括交叉标记图案的虚拟图案围绕衍射光栅的阵列布置。因此，实现了均匀衍射光栅图案，其中邻近效应在衍射光栅阵列上是均匀的。此外，交叉标记可以设置在衍射光栅阵列附近。因此，可以通过使用能够实现衍射光栅的精确定位的标准部件，将衍射光栅放置在适当位置并且被准确且容易地校准。因此，可以实现应对下一代半导体光刻技术的精确计量校准。

4. 发明授权

US06262427B1 Variable transmission reticle for charged particle beam lithography tool 失效
标题翻译：用于带电粒子束光刻工具的可变透射掩模版
公开(公告)号：US06262427B1
公开(公告)日：2001-07-17
申请号：US09353793
申请日：1999-07-15
申请人： Michael S. Gordon
发明人： Michael S. Gordon
IPC分类号： H01J37304
CPC分类号： H01J37/304 , H01J2237/30444 , H01J2237/3175
摘要： A compound reticle having generally complementary clear and opaque areas on a portion of subfield in each of two reticle layers which can be moved relative to each other form a variable transmissivity shutter to regulate charged particle beam intensity independently of source beam current. Either homogeneous or inhomogeneous (e.g. having local variations in beam current density) can be produced at will and in rapid succession to study effects of beam current on beam pattern resolution and aberrations as well as optimum focus for particular patterned subfields having respectively differing transmissivities.
摘要翻译：在两个分划板层中的每一个中的子场的一部分上具有大致互补的透明和不透明区域的复合掩模版可以相对于彼此移动形成可变的透射遮挡板，以独立于源束流电流来调节带电粒子束强度。可以随意产生均匀的或不均匀的（例如具有束流密度的局部变化），并且可以快速连续地研究束电流对波束图案分辨率和像差的影响以及具有不同透射率的特定图案化子场的最佳聚焦。

5. 发明授权

US5798528A Correction of pattern dependent position errors in electron beam lithography 失效
标题翻译：电子束光刻中图案相关位置误差的校正
公开(公告)号：US5798528A
公开(公告)日：1998-08-25
申请号：US814211
申请日：1997-03-11
申请人： Rainer Butsch , John George Hartley , Werner Stickel
发明人： Rainer Butsch , John George Hartley , Werner Stickel
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/30433 , H01J2237/30444
摘要： A method is disclosed for improving the electron beam apparatus lithography process wherein the calibration procedure for the apparatus is improved by using the product pattern and stepping sequence used to make the mask on a calibration plate and/or calibration grid and to determine improved apparatus correction errors which errors are used to control the apparatus for making an improved mask. The well-known EMULATION procedure is improved by calculating additional field correction errors based on a two step registration procedure to determine X/Y apparatus stepping errors. The LEARN procedure based on a static calibration grid procedure is improved by employing the duty cycle of the product pattern to calibrate the apparatus to determine deflection beam errors.
摘要翻译：公开了一种用于改进电子束装置光刻处理的方法，其中通过使用产品图案和用于在校准板和/或校准网格上制作掩模的步进顺序来改进装置的校准程序，并且确定改进的装置校正误差哪些错误用于控制用于制造改进掩模的装置。通过基于两步注册过程来计算附加的场校正误差来确定X / Y设备的步进误差来改进众所周知的仿真程序。基于静态校准网格程序的LEARN程序通过采用产品图案的占空比校准装置来确定偏转光束误差得到改进。

6. 发明申请

US20150318139A1 TARGET DEVICE, LITHOGRAPHY APPARATUS, AND ARTICLE MANUFACTURING METHOD 审中-公开
标题翻译：目标设备，平面设备和制品制造方法
公开(公告)号：US20150318139A1
公开(公告)日：2015-11-05
申请号：US14700237
申请日：2015-04-30
申请人： CANON KABUSHIKI KAISHA
发明人： Mitsuaki Amemiya
IPC分类号： H01J37/04 , H01J37/147 , H01J37/20
CPC分类号： H01J37/3174 , H01J37/045 , H01J37/1474 , H01J37/20 , H01J37/3045 , H01J2237/043 , H01J2237/063 , H01J2237/15 , H01J2237/303 , H01J2237/30444
摘要： Provided is a target device for scattering a charged particle incident thereon, the device comprising: a base; a reference mark provided on the base and having a range of the charged particle therein smaller than a range of the charged particle in the base; and a shield provided on the base apart from the reference mark and having a range of the charged particle therein smaller than the range of the charged particle in the base.
摘要翻译：提供了用于散射入射到其上的带电粒子的目标装置，该装置包括：基座; 在基底上设置的参考标记，其中带电粒子的范围小于基底中的带电粒子的范围; 以及设置在所述基座上的与所述参考标记分开的屏蔽件，并且其带电粒子的范围小于所述基座中带电粒子的范围。

7. 发明申请

US20140027512A1 APPARATUS AND METHOD FOR INVESTIGATING AN OBJECT 有权
标题翻译：用于调查对象的装置和方法
公开(公告)号：US20140027512A1
公开(公告)日：2014-01-30
申请号：US14038148
申请日：2013-09-26
申请人： Carl Zeiss SMS GmbH
发明人： Christof Baur , Klaus Edinger , Thorsten Hofmann , Gabriel Baralia , Michael Budach
IPC分类号： G01B15/00 , G06K7/00
CPC分类号： G01B15/00 , B82Y35/00 , G01Q30/02 , G06K7/0004 , H01J37/244 , H01J37/28 , H01J37/3045 , H01J2237/2817 , H01J2237/2818 , H01J2237/2826 , H01J2237/30444
摘要： The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope and at least one scanning probe microscope with a probe, wherein the scanning particle microscope and the at least one scanning probe microscope are spaced with respect to each other in a common vacuum chamber so that a distance between the optical axis of the scanning particle microscope and the measuring point of the scanning probe microscope in the direction perpendicular to the optical axis of the scanning particle microscope is larger than the maximum field of view of both the scanning probe microscope and the scanning particle microscope, wherein the method comprises the step of determining the distance between the measuring point of the scanning probe microscope and the optical axis of the scanning particle microscope.
摘要翻译：本发明涉及一种使用扫描粒子显微镜和至少一个具有探针的扫描探针显微镜来研究物体的装置和方法，其中扫描粒子显微镜和至少一个扫描探针显微镜相对于彼此间隔开在共同的真空室中，使得扫描粒子显微镜的光轴与扫描探针显微镜的测量点在垂直于扫描粒子显微镜的光轴的方向上的距离大于两者的最大视场扫描探针显微镜和扫描粒子显微镜，其中，该方法包括确定扫描探针显微镜的测量点与扫描粒子显微镜的光轴之间的距离的步骤。

8. 发明申请

US20080067370A1 Electron microscope and scanning probe microscope calibration device 审中-公开
标题翻译：电子显微镜和扫描探针显微镜校准装置
公开(公告)号：US20080067370A1
公开(公告)日：2008-03-20
申请号：US11428388
申请日：2006-07-01
申请人： John Patrick McCaffrey
发明人： John Patrick McCaffrey
IPC分类号： G12B13/00
CPC分类号： G01Q40/02 , H01J37/263 , H01J37/3045 , H01J2237/28 , H01J2237/2818 , H01J2237/2823 , H01J2237/2826 , H01J2237/30444
摘要： An electron microscope or scanning probe microscope calibration device can provide accurate length calibrations in the ranges from sub-nanometer to several micrometers. The device material consists of a series of periodic structures grown on a single crystal semiconductor substrate. The device material is prepared as a cross-sectional sample for viewing the periodic structures in an electron or scanning probe microscope. The measurements of the indicator features are very accurate and verifiable, being directly referenced to the crystal lattice spacing of the substrate material of the device, as determined by cross-sectional TEM or XRD of periodic structures. The device provides consistency and accuracy across these calibration ranges, and between electron and scanning probe microscopes.
摘要翻译：电子显微镜或扫描探针显微镜校准装置可以在从亚纳米到几微米的范围内提供精确的长度校准。器件材料由在单晶半导体衬底上生长的一系列周期性结构组成。将器件材料制备成用于在电子或扫描探针显微镜中观察周期性结构的横截面样品。指示器特征的测量是非常精确和可验证的，直接参考由周期性结构的横截面TEM或XRD确定的器件的衬底材料的晶格间距。该设备在这些校准范围之间以及电子和扫描探针显微镜之间提供了一致性和准确性。

9. 发明授权

US5585211A Fabrication and use of sub-micron dimensional standard 失效
标题翻译：制造和使用亚微米尺寸标准
公开(公告)号：US5585211A
公开(公告)日：1996-12-17
申请号：US383922
申请日：1995-02-06
申请人： Leon A. Firstein , John L. Rogers , Arthur Noz
发明人： Leon A. Firstein , John L. Rogers , Arthur Noz
IPC分类号： G01B15/00 , G01Q40/02 , G03F7/20 , G03F7/26 , H01J37/20 , G03C5/00
CPC分类号： G03F7/70558 , B82Y35/00 , H01J2237/30444 , H01J2237/3045 , Y10S430/143
摘要： A sub-micron dimensional standard is embodied in a grating of equal-sized lines and spaces formed in an electron-sensitive material by means of E-beam lithography. Several gratings are generated in the material at different respective doses of electrons. For each dose, a plurality of gratings are formed with different respective energy deposition contours over the interface of a line and a space. At one dose the energy deposition contour will be the same for all of the different energy deposition contour values. The grating formed with this dose is chosen as the one having a part which forms the standard. The width of a line, as well as the width of a space, in the selected grating is known in absolute terms to the same degree of accuracy as the grating's period. With such an artifact, the systematic error inherent to a measurement system can be determined. Once this error is known, it can be employed as a compensating factor to correct measurements made via the system.
摘要翻译：亚微米尺寸标准体现在通过电子束光刻法形成在电子敏感材料中的等大小线和间隔的光栅中。在不同相应剂量的电子的材料中产生几个光栅。对于每个剂量，在线和空间的界面上形成具有不同的相应能量沉积轮廓的多个光栅。在一个剂量下，对于所有不同的能量沉积轮廓值，能量沉积轮廓将是相同的。选择用该剂量形成的光栅作为具有形成标准的部分的光栅。所选光栅中的线的宽度以及空间的宽度绝对地与光栅周期的精度相同。通过这样的假象，可以确定测量系统固有的系统误差。一旦知道这个错误，就可以将其用作校正通过系统进行的测量的补偿因子。

10. 发明授权

US09595419B1 Alignment and registration targets for multiple-column charged particle beam lithography and inspection 有权
标题翻译：多列带电粒子束光刻和检查的对准和配准目标
公开(公告)号：US09595419B1
公开(公告)日：2017-03-14
申请号：US14522563
申请日：2014-10-23
申请人： Multibeam Corporation
发明人： Kevin M. Monahan , Michael C. Smayling , Theodore A. Prescop , David K. Lam
IPC分类号： H01J37/22 , H01J37/26
CPC分类号： H01J37/3045 , G03F1/42 , G03F1/86 , G03F9/7076 , G03F9/7084 , H01J37/222 , H01J37/261 , H01J37/265 , H01J37/3005 , H01J37/3177 , H01J2237/063 , H01J2237/2611 , H01J2237/2826 , H01J2237/30444 , H01J2237/31762 , H01J2237/31764 , H01J2237/31774
摘要： The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use patterns generated using the Hadamard transform as alignment and registration marks (Hadamard targets) for multiple-column charged particle beam lithography and inspection tools. Further, superior substrate alignment and layer-to-layer pattern registration accuracy can be achieved using Hadamard targets patterned in edge-proximal portions of the substrate that are typically stripped bare of resist prior to lithography, in addition to Hadamard targets patterned in inner substrate portions. High-order Hadamard targets can also be patterned and imaged to obtain superior column performance metrics for applications such as super-rapid beam calibration DOE, column matching, and column performance tracking. Superior alignment and registration, and column parameter optimization, allow significant yield gains.
摘要翻译：本申请公开了使用带电粒子束工具来图案化和检查衬底的方法，系统和装置。本发明人已经发现使用Hadamard变换产生的图案作为用于多列带电粒子束光刻和检查工具的对准和对准标记（Hadamard靶）是非常有利的。此外，除了在内部衬底部分中图案化的Hadamard靶之外，还可以使用在光刻之前通常剥离光刻胶的基板的边缘近端部分图案化的Hadamard靶，从而实现优异的衬底对准和层间图案配准精度。高阶Hadamard靶也可以进行图案化和成像，以获得诸如超快速光束校准DOE，色谱柱匹配和色谱柱性能跟踪等应用的卓越色谱柱性能指标。优异的对齐和注册以及列参数优化，可显着提高收益。

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