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1. 发明授权

US5798528A Correction of pattern dependent position errors in electron beam lithography 失效
标题翻译：电子束光刻中图案相关位置误差的校正
公开(公告)号：US5798528A
公开(公告)日：1998-08-25
申请号：US814211
申请日：1997-03-11
申请人： Rainer Butsch , John George Hartley , Werner Stickel
发明人： Rainer Butsch , John George Hartley , Werner Stickel
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/30433 , H01J2237/30444
摘要： A method is disclosed for improving the electron beam apparatus lithography process wherein the calibration procedure for the apparatus is improved by using the product pattern and stepping sequence used to make the mask on a calibration plate and/or calibration grid and to determine improved apparatus correction errors which errors are used to control the apparatus for making an improved mask. The well-known EMULATION procedure is improved by calculating additional field correction errors based on a two step registration procedure to determine X/Y apparatus stepping errors. The LEARN procedure based on a static calibration grid procedure is improved by employing the duty cycle of the product pattern to calibrate the apparatus to determine deflection beam errors.
摘要翻译：公开了一种用于改进电子束装置光刻处理的方法，其中通过使用产品图案和用于在校准板和/或校准网格上制作掩模的步进顺序来改进装置的校准程序，并且确定改进的装置校正误差哪些错误用于控制用于制造改进掩模的装置。通过基于两步注册过程来计算附加的场校正误差来确定X / Y设备的步进误差来改进众所周知的仿真程序。基于静态校准网格程序的LEARN程序通过采用产品图案的占空比校准装置来确定偏转光束误差得到改进。

2. 发明授权

US5916716A Emulation methodology for critical dimension control in E-Beam lithography 失效
标题翻译：电子束光刻中关键尺寸控制的仿真方法
公开(公告)号：US5916716A
公开(公告)日：1999-06-29
申请号：US816240
申请日：1997-03-13
申请人： Rainer Butsch , Timothy R. Groves , John G. Hartley
发明人： Rainer Butsch , Timothy R. Groves , John G. Hartley
IPC分类号： G03F7/20 , H01J37/317 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/3174 , H01J2237/3045 , H01J2237/30461 , Y10S430/143
摘要： Across chip line width variations and other repetitive deviations from the design pattern desired in E-Beam lithography are compensated for by examining each of the regions (i.e., frames, stripes, etc.) of a patterned substrate, determining the amount of deviation for each region, and using the determined regional deviation as a local bias when patterning subsequent substrates. Thus, the E-Beam lithography tool will utilize both global and local biases in order to produce new patterned substrates which lack the deviations found when local bias was not applied. In this way, the root cause of the deviation does not need to be determined. The local bias can be applied directly by modifying the E-Beam lithography system tool commands to provide for patterning wider or thinner lines or to provide for greater or lesser exposure time. Alternatively, the local bias can be applied by varying the emission current of the electron gun for different regions of the substrate.
摘要翻译：通过检查图案化衬底的每个区域（即，框架，条纹等），跨线切割线宽度变化和与E-Beam光刻中期望的设计图案的其它重复偏差得到补偿，确定每个并且当构图后续衬底时使用确定的区域偏差作为局部偏置。因此，E-Beam光刻工具将利用全局和局部偏压，以便产生新的图案化衬底，当没有施加局部偏压时，其缺少发现的偏差。以这种方式，不需要确定偏差的根本原因。可以通过修改E-Beam光刻系统工具命令来直接施加局部偏压，以提供更宽或更薄的线图案，或者提供更大或更小的曝光时间。或者，可以通过改变基板的不同区域的电子枪的发射电流来施加局部偏置。

3. 发明授权

US5838013A Method for monitoring resist charging in a charged particle system 失效
标题翻译：用于监测带电粒子系统中的抗蚀剂充电的方法
公开(公告)号：US5838013A
公开(公告)日：1998-11-17
申请号：US746534
申请日：1996-11-13
申请人： Rainer Butsch , William A. Enichen , Michael S. Gordon , John G. Hartley
发明人： Rainer Butsch , William A. Enichen , Michael S. Gordon , John G. Hartley
IPC分类号： G03F9/00 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F9/00 , H01J37/3174 , H01J2237/31796
摘要： A method for monitoring resist charging in an electron beam lithography system is disclosed. The method involves the use of a reference plate (REFP) registration scheme in which a resist-coated REFP having registration marks on a substrate is prepared and scanned. The scanning process includes the deposition of an amount of charge on the surface. Then the REFP is coated with a resist to be tested and scanned again. The difference between the two scans is calculated. Preferably, each scan is performed first with the stage moving in a forward-ordered serpentine path in the tool to determine the perceived positions of the registration marks and then in a backward-ordered serpentine path. As the tool's stage moves from field to field, a small charge is deposited on the REFP to simulate the effect of a writing process. The difference between the forward and reverse scan position measurements is then determined. As any intrinsic positional errors in measurement will cancel out, the forward/backward error provides a monitor of the magnitude of resist charging.
摘要翻译：公开了一种用于监测电子束光刻系统中的抗蚀剂充电的方法。该方法涉及使用参考板（REFP）配准方案，其中准备并扫描在衬底上具有配准标记的抗蚀剂涂覆的REFP。扫描过程包括在表面上沉积一定量的电荷。然后将REFP涂上待测试的抗蚀剂并再次扫描。计算两次扫描之间的差异。优选地，首先执行每个扫描，其中台架在工具中沿前进的蛇形路径移动，以确定注册标记的感知位置，然后在后向顺序的蛇形路径中。随着工具阶段从现场转移到现场，在REFP上存放一小笔费用来模拟写入过程的效果。然后确定正向和反向扫描位置测量之间的差异。由于测量中的任何固有的位置误差将被抵消，所以前向/后向误差提供了抗蚀剂充电量的监视。

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