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1. 发明授权

US4985634A Ion beam lithography 失效
标题翻译：离子束光刻
公开(公告)号：US4985634A
公开(公告)日：1991-01-15
申请号：US226275
申请日：1988-07-29
申请人： Gerhard Stengl , Hilton F. Glavish
发明人： Gerhard Stengl , Hilton F. Glavish
IPC分类号： H01J37/30 , H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/304 , H01J37/3174 , H01J2237/04928 , H01J2237/1207 , H01J2237/30438 , H01J2237/31755 , H01J2237/31776
摘要： Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.
摘要翻译：描述了用于投影离子束光刻的装置和方法，其允许使用实际尺寸的光学柱在晶片平面处形成掩模图案的低失真，大场，缩小图像。所示的列包括加速的Einzel透镜，随后是间隙透镜，具有许多合作特征。通过协调选择光学柱的参数，同时最小化透镜失真和色彩模糊。在新场景的曝光之前和期间都采用相对于晶片上的现有图案的图像场的位置的实时测量，并且提供了将新场与现有图案相匹配的装置，即使后者具有被处理扭曲了。计量系统使仪器方便校准和调整。

2. 发明授权

US06365903B2 Method of forming a quadrupole device for projection lithography by means of charged particles 失效
标题翻译：通过带电粒子形成用于投影光刻的四极装置的方法
公开(公告)号：US06365903B2
公开(公告)日：2002-04-02
申请号：US09824620
申请日：2001-04-02
申请人： Marcellinus P. C. M. Krijn
发明人： Marcellinus P. C. M. Krijn
IPC分类号： H01J37153
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3175 , H01J2237/04928 , H01J2237/31788
摘要： According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over. The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.
摘要翻译：根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。在避免具有高电流浓度的区域中，本发明允许较大的束流。为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉。该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

3. 发明申请

US20010023926A1 Method of forming a quadrupole device for projection lithography by means of charged particles 失效
标题翻译：通过带电粒子形成用于投影光刻的四极装置的方法
公开(公告)号：US20010023926A1
公开(公告)日：2001-09-27
申请号：US09824620
申请日：2001-04-02
申请人： PHILIPS CORPORATION
发明人： Marcellinus P.C.M. Krijn
IPC分类号： G21K001/08
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3175 , H01J2237/04928 , H01J2237/31788
摘要： According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over. The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.
摘要翻译：根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。在避免具有高电流浓度的区域中，本发明允许较大的束流。为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉。该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

4. 发明授权

US06236052B1 Quadrupole device for projection lithography by means of charged particles 失效
标题翻译：用于通过带电粒子进行投影光刻的四极杆装置
公开(公告)号：US06236052B1
公开(公告)日：2001-05-22
申请号：US09392686
申请日：1999-09-09
申请人： Marcellinus P. C. M. Krijn
发明人： Marcellinus P. C. M. Krijn
IPC分类号： H01J37153
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3175 , H01J2237/04928 , H01J2237/31788
摘要： According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.
摘要翻译：根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。在避免具有高电流浓度的区域中，本发明允许较大的束流。为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉（18）。该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

5. 发明授权

US5285074A Dynamic compensation of non-linear electron beam landing angle in variable axis lenses 失效
标题翻译：可变轴透镜中非线性电子束着陆角的动态补偿
公开(公告)号：US5285074A
公开(公告)日：1994-02-08
申请号：US893172
申请日：1992-06-03
申请人： Don F. Haire , Cecil T. Ho , Guenther O. Langner , Werner Stickel , Edward V. Weber
发明人： Don F. Haire , Cecil T. Ho , Guenther O. Langner , Werner Stickel , Edward V. Weber
IPC分类号： G09G1/00 , G09G1/04 , H01J29/70 , H01J37/147 , H01J37/304 , H01L21/027 , H01L21/30 , H04N3/16
CPC分类号： H01J37/304 , H01J2237/04928 , H01J2237/1507 , H01J2237/153 , H01J2237/30461 , H01J2237/3175
摘要： A dynamic correction arrangement for an electron beam projection/deflection system provides high order correction values for deflection in accordance with a correction equation. Particularly as applied to high accuracy telecentric deflection, the coefficients of terms of the correction equation may be determined by calibration for a small number of test points. Correction values may be stored in a look-up table or computed in real time by using a math co-processor in a processing pipeline. The correction provided corrects landing angle errors through the third order in telecentric projection/deflection systems such as systems utilizing variable axis immersion lenses.
摘要翻译：电子束投影/偏转系统的动态校正装置根据校正方程为偏转提供高阶校正值。特别是应用于高精度远心偏转时，校正方程的项的系数可以通过少量测试点的校准来确定。校正值可以存储在查找表中或通过在处理流水线中使用数学协处理器实时计算。该校正提供了在诸如利用可变轴浸没透镜的系统的远心投影/偏转系统中通过第三级校正着陆角误差。

6. 发明授权

US09922799B2 Apparatus of plural charged-particle beams 有权
公开(公告)号：US09922799B2
公开(公告)日：2018-03-20
申请号：US15213781
申请日：2016-07-19
申请人： Hermes Microvision, Inc.
发明人： Shuai Li , Weiming Ren , Xuedong Liu , Juying Dou , Xuerang Hu , Zhongwei Chen
IPC分类号： H01J37/28 , H01J37/10 , H01J37/20 , H01J37/244
CPC分类号： H01J37/28 , H01J37/10 , H01J37/20 , H01J37/244 , H01J2237/0453 , H01J2237/0492 , H01J2237/04924 , H01J2237/04926 , H01J2237/04928 , H01J2237/1205 , H01J2237/1501 , H01J2237/1502 , H01J2237/2446 , H01J2237/2448 , H01J2237/2806 , H01J2237/2817
摘要： A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

7. 发明申请

US20170025241A1 Apparatus of Plural Charged-Particle Beams 有权
标题翻译：多次充电粒子束装置
公开(公告)号：US20170025241A1
公开(公告)日：2017-01-26
申请号：US15213781
申请日：2016-07-19
申请人： Hermes Microvision, Inc.
发明人： Shuai Li , Weiming Ren , Xuedong Liu , Juying Dou , Xuerang Hu , Zhongwei Chen
IPC分类号： H01J37/14 , H01J37/20 , H01J37/244 , H01J37/28
CPC分类号： H01J37/28 , H01J37/10 , H01J37/20 , H01J37/244 , H01J2237/0453 , H01J2237/0492 , H01J2237/04924 , H01J2237/04926 , H01J2237/04928 , H01J2237/1205 , H01J2237/1501 , H01J2237/1502 , H01J2237/2446 , H01J2237/2448 , H01J2237/2806 , H01J2237/2817
摘要： A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.
摘要翻译：提出了一种用于以高分辨率和高吞吐量和灵活变化的观察条件观察样品的多光束装置。该装置使用可移动准直透镜来灵活地改变多个探针点的电流而不影响其间隔，新的源转换单元形成单个电子源的多个图像并补偿多个探针点的离轴像差以及用于减小由于一次电子束引起的强烈的库仑效应的前束形成装置。

8. 发明授权

US6005250A Illumination deflection system for E-beam projection 失效
标题翻译：用于电子束投影的照明偏转系统
公开(公告)号：US6005250A
公开(公告)日：1999-12-21
申请号：US138595
申请日：1998-08-22
申请人： Werner Stickel , Steven Douglas Golladay
发明人： Werner Stickel , Steven Douglas Golladay
IPC分类号： H01L21/027 , G03F7/20 , H01J37/30 , H01J37/09
CPC分类号： H01J37/3007 , H01J2237/04928 , H01J2237/3175
摘要： An electron beam projection system comprises a source of an electron beam, a first doublet of condenser lenses with a first symmetry plane, a first aperture comprising a trim aperture located at the first symmetry plane of the first doublet also serving as a first blanking aperture. A second aperture comprises a shaping aperture located below the trim aperture. A second doublet of condenser lenses with a second symmetry plane is located below the second aperture, the second doublet having a symmetry plane. A third aperture is located at the symmetry plane of the second doublet wherein the third aperture comprises another blanking aperture. There are first blanking plates between the first condenser lens and the trim aperture, and second electrostatic alignment plates between the trim aperture and the second aperture. The second doublet comprises a pair of illuminator lenses including deflectors coaxial therewith and located inside the radius of the lenses and shielding rings located along the inner surfaces of the lenses, and correctors located coaxial with the deflectors and inside or outside of the radii thereof including stigmators, focus coils and a hexapole.
摘要翻译：电子束投影系统包括电子束源，具有第一对称平面的聚光透镜的第一双重透镜，第一孔包括位于第一双峰的第一对称平面处的微调孔，其也用作第一消隐孔。第二孔包括位于修剪孔下方的成形孔。具有第二对称平面的第二个具有第二对称平面的聚光透镜位于第二孔的下方，第二双峰具有对称平面。第三孔位于第二双层的对称平面处，其中第三孔包括另一消隐孔。在第一聚光透镜和调节孔之间存在第一遮挡板，以及在修剪孔和第二孔之间的第二静电对准板。第二双层包括一对照明器透镜，其包括与其同轴的偏转器，位于透镜的半径内并且沿着透镜的内表面定位的屏蔽环，以及与偏转器同轴并且其半径的内部或外部的校正器包括标示器，聚焦线圈和六极。

9. 发明授权

US5801388A Particle beam, in particular ionic optic imaging system 失效
标题翻译：粒子束，特别是离子光学成像系统
公开(公告)号：US5801388A
公开(公告)日：1998-09-01
申请号：US669481
申请日：1996-09-17
申请人： Gerhard Stengl , Alfred Chalupka , Herbert Vonach
发明人： Gerhard Stengl , Alfred Chalupka , Herbert Vonach
IPC分类号： H01J37/12 , H01J37/30 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3007 , H01J37/12 , H01J2237/04924 , H01J2237/04928 , H01J2237/31755
摘要： A particle beam, in particular in ionic on the reproduction system, preferably for lithographic purposes, has a particle source, in particular an ion source for reproducing on a wafer a structure designed in a masking foil as one or several transparent spots, in particular openings, through at least two electrostatic lenses arranged upstream of the wafer. One of the lenses is a grating lens constituted by one or two tubular electrodes and by a perforated plate arranged in the path of the beam perpendicularly to the optical axis. The plate is formed by a masking foil which forms the central or first electrode of the granting lens, in the direction of propagation of the beam.
摘要翻译： PCT No.PCT / AT95 / 00003 Sec。 371日期1996年9月17日 102（e）1996年9月17日PCT 1995年1月12日PCT PCT。公开号WO95 / 19637 日期1995年7月20日粒子束，特别是在再生系统上的离子，优选用于光刻目的，具有粒子源，特别是用于在晶片上再现设计在掩模箔中的结构作为一个或多个透明的离子源斑点，特别是开口，通过布置在晶片上游的至少两个静电透镜。其中一个透镜是由一个或两个管状电极和布置在垂直于光轴的光束路径中的多孔板构成的光栅透镜。该板由掩模箔形成，该掩模箔沿着光束的传播方向形成准许透镜的中心或第一电极。

10. 发明授权

US11705304B2 Apparatus of plural charged-particle beams 有权
公开(公告)号：US11705304B2
公开(公告)日：2023-07-18
申请号：US17373716
申请日：2021-07-12
申请人： ASML Netherlands B.V.
发明人： Shuai Li , Weiming Ren , Xuedong Liu , Juying Dou , Xuerang Hu , Zhongwei Chen
IPC分类号： H01J37/28 , H01J37/10 , H01J37/20 , H01J37/244
CPC分类号： H01J37/28 , H01J37/10 , H01J37/20 , H01J37/244 , H01J2237/0453 , H01J2237/0492 , H01J2237/04924 , H01J2237/04926 , H01J2237/04928 , H01J2237/1205 , H01J2237/1501 , H01J2237/1502 , H01J2237/2446 , H01J2237/2448 , H01J2237/2806 , H01J2237/2817
摘要： A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

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