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    • 1. 发明授权
    • Inorganic-particle-dispersed sputtering target
    • 无机粒子分散溅射靶
    • US09034155B2
    • 2015-05-19
    • US13147782
    • 2010-07-27
    • Atsushi SatoYuichiro Nakamura
    • Atsushi SatoYuichiro Nakamura
    • C23C14/34G11B5/851
    • G11B5/851C23C14/3414
    • Provided is an inorganic-particle-dispersed sputtering target in which inorganic particles are dispersed in a Co base material, wherein the inorganic particles have an electric resistivity of 1×101 Ω·m or less and the volume ratio of the inorganic particles in the target is 50% or less. The sputtering target thus adjusted is advantageous in that, when sputtering is performed using a magnetron sputtering device comprising a DC power source, the inorganic particles are less charged, and arcing occurs less frequently. Accordingly, by using the sputtering target of the present invention, the occurrence of particles attributable to the arcing reduces, and a significant effect of improving the yield in forming a thin film is obtained.
    • 本发明提供一种无机粒子分散溅射靶,其中无机颗粒分散在Co基材料中,其中无机颗粒的电阻率为1×10 11Ω·m·m·m以下,无机颗粒的体积比 目标是50%以下。 如此调整的溅射靶的优点在于,当使用包括直流电源的磁控管溅射装置进行溅射时,无机颗粒的带电少,并且电弧放电频率较低。 因此,通过使用本发明的溅射靶,可以减少由于电弧引起的粒子的发生,并且获得提高薄膜形成的显着效果。