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1. 发明授权

US11939696B2 Thin plate-shaped single-crystal production equipment and thin plate-shaped single-crystal production method 有权
公开(公告)号：US11939696B2
公开(公告)日：2024-03-26
申请号：US17610890
申请日：2021-02-12
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B15/10 , C30B15/16 , C30B15/30 , C30B23/00 , C30B35/00
CPC分类号： C30B15/16 , C30B15/10 , C30B15/30 , C30B23/00 , C30B35/002
摘要： [Object] To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method that can produce a thin plate-shaped single crystal having a uniform dopant concentration at an optimum chemical composition and a thickness of several hundreds of micrometers continuously at low cost with high precision even when the single crystal is a single crystal of an incongruent melting material or a solid solution material or a single crystal of a congruent melting material.
[Solution] Thin plate-shaped single-crystal production equipment includes: an infrared ray irradiation apparatus that irradiates an upper surface of a raw material lump for production of a thin plate-shaped single crystal with an infrared ray to melt the upper surface; and an elevator apparatus that causes a lower surface of a thin plate-shaped seed single crystal to be immersed in a melt melted using the infrared ray irradiation apparatus and formed on the upper surface and then pulls the thin plate-shaped seed single crystal immersed in the melt upward. The thin plate-shaped single-crystal production equipment is configured such that, by using the elevator apparatus to immerse the lower surface of the thin plate-shaped seed single crystal in the melt formed on the upper surface of the raw material lump for the production of the thin plate-shaped single crystal using the infrared ray irradiation apparatus, growth of a single crystal is started from the lower surface of the immersed thin plate-shaped seed single crystal and that, by using the elevator apparatus to pull the thin plate-shaped seed single crystal upward, the thin plate-shaped single crystal is produced continuously.

2. 发明授权

US11739435B2 Single-crystal fiber production equipment and single-crystal fiber production method 有权
公开(公告)号：US11739435B2
公开(公告)日：2023-08-29
申请号：US17610871
申请日：2021-02-12
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B13/22 , C30B13/00 , C30B13/32 , C30B15/16 , C30B29/12
CPC分类号： C30B13/005 , C30B13/22 , C30B13/32 , C30B15/16 , C30B29/12
摘要： [Object] To provide a single-crystal fiber production equipment and a single-crystal fiber production method that do not at all require high precision control necessary for a conventional single-crystal production equipment, can very easily maintain a stable steady state for a long time, and can stably produce a long single crystal fiber having a length of several hundreds of meters or more.
[Solution] The single-crystal fiber production equipment is used to produce a single crystal fiber by irradiating an upper surface of a raw material rod with a laser beam within a chamber to form a melt, immersing a seed single crystal in the melt, and pulling the seed single crystal upward. The single-crystal fiber production equipment includes: a laser light source that emits the laser beam as a collimated beam; a pulling device configured to be upward and downward movable in a vertical direction with the seed single crystal held thereby; and a flat reflector that reflects the laser beam such that the reflected laser beam is incident vertically on the upper surface of the raw material rod. The upper surface of the raw material rod is irradiated with the laser beam such that the melt has a donut-shaped temperature distribution.

3. 发明公开

US20240352614A1 Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plate-Shaped Single-Crystal Production Method 审中-公开
公开(公告)号：US20240352614A1
公开(公告)日：2024-10-24
申请号：US18294647
申请日：2022-06-14
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B15/16 , C30B15/04 , C30B15/22 , C30B15/30 , C30B29/64
CPC分类号： C30B15/16 , C30B15/04 , C30B15/22 , C30B15/30 , C30B29/64
摘要： To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method capable of applying a large raw material lump while suppressing an increase in output of an infrared ray, and capable of continuously producing a thin plate-shaped single crystal in which a dopant concentration is an optimum composition and uniform at low cost with high accuracy. Included are an infrared ray irradiation apparatus that irradiates an upper surface of a raw material lump for producing a thin plate-shaped single crystal with an infrared ray to melt a surface of the upper surface of the raw material lump; an elevator apparatus that immerses a lower surface of a thin plate-shaped seed single crystal in a melt melted by the infrared ray irradiation apparatus and obtained on the surface of the upper surface of the raw material lump, and lifts the seed single crystal upward from the immersed state; and a horizontal direction moving apparatus that moves the raw material lump in a horizontal direction. By immersing the lower surface of the seed single crystal in the melt obtained on the surface of the upper surface of the raw material lump by the infrared ray irradiation apparatus via the elevator apparatus, growth of a single crystal is started from the lower surface of the immersed seed single crystal. Furthermore, configured such that, by moving the raw material lump in the horizontal direction by the horizontal direction moving apparatus simultaneously with lifting the seed single crystal upward via the elevator apparatus, a thin plate-shaped single crystal is continuously produced while a molten region of the upper surface of the raw material lump is moved in the horizontal direction.

4. 发明申请

US20220411957A1 Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plate-Shaped Single-Crystal Production Method 有权
公开(公告)号：US20220411957A1
公开(公告)日：2022-12-29
申请号：US17610890
申请日：2021-02-12
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B15/16 , C30B23/00 , C30B15/10 , C30B35/00 , C30B15/30
摘要： [Object] To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method that can produce a thin plate-shaped single crystal having a uniform dopant concentration at an optimum chemical composition and a thickness of several hundreds of micrometers continuously at low cost with high precision even when the single crystal is a single crystal of an incongruent melting material or a solid solution material or a single crystal of a congruent melting material.
[Solution] Thin plate-shaped single-crystal production equipment includes: an infrared ray irradiation apparatus that irradiates an upper surface of a raw material lump for production of a thin plate-shaped single crystal with an infrared ray to melt the upper surface; and an elevator apparatus that causes a lower surface of a thin plate-shaped seed single crystal to be immersed in a melt melted using the infrared ray irradiation apparatus and formed on the upper surface and then pulls the thin plate-shaped seed single crystal immersed in the melt upward. The thin plate-shaped single-crystal production equipment is configured such that, by using the elevator apparatus to immerse the lower surface of the thin plate-shaped seed single crystal in the melt formed on the upper surface of the raw material lump for the production of the thin plate-shaped single crystal using the infrared ray irradiation apparatus, growth of a single crystal is started from the lower surface of the immersed thin plate-shaped seed single crystal and that, by using the elevator apparatus to pull the thin plate-shaped seed single crystal upward, the thin plate-shaped single crystal is produced continuously.

5. 发明授权

US11326270B2 Single-crystal production equipment and single-crystal production method 有权
公开(公告)号：US11326270B2
公开(公告)日：2022-05-10
申请号：US16303297
申请日：2018-03-29
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B13/08 , C30B13/28 , C30B13/14 , C30B13/24
摘要： A single-crystal production equipment which includes, at least: a raw material supply apparatus which supplies a granular raw material to a melting apparatus positioned therebelow; the melting apparatus heats and melts the granular raw material to generate a raw material melt and supplies the raw material melt into a single-crystal production crucible positioned therebelow; and a crystallization apparatus which includes the single-crystal production crucible in which a seed single crystal is placed on the bottom, and a first infrared ray irradiation equipment which irradiates an infrared ray to the upper surface of the seed single crystal in the single-crystal production crucible, and the single-crystal production equipment is configured such that the raw material melt is dropped into a melt formed by irradiating the upper surface of the seed single crystal with the infrared ray, and a single crystal is allowed to precipitate out of the thus formed mixed melt.

6. 发明授权

US10829869B2 Single-crystal production equipment and single-crystal production method 有权
公开(公告)号：US10829869B2
公开(公告)日：2020-11-10
申请号：US15736467
申请日：2017-05-31
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B35/00 , C30B11/08 , C30B29/06 , C30B17/00 , C30B11/00 , C30B13/14 , C30B13/08 , C30B15/02
摘要： Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration and contains only a small number of negative crystals and exsolution lamellae. A single-crystal production equipment includes at least: a quartz crucible in which a seed crystal is placed on its bottom; a powder raw material supply apparatus which supplies a powder raw material into the quartz crucible; and an infrared ray irradiation apparatus which applies an infrared ray to the powder raw material supplied into the quartz crucible from the powder raw material supply apparatus.

7. 发明申请

US20190032242A1 Single-Crystal Production Equipment 审中-公开
公开(公告)号：US20190032242A1
公开(公告)日：2019-01-31
申请号：US15736507
申请日：2017-05-31
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B13/24 , C30B29/06 , C30B13/10
摘要： A single-crystal production equipment includes a transparent quartz tube, in which a seed crystal is placed; a powder raw material supply apparatus, which is arranged above the transparent quartz tube and supplies a powder raw material onto the seed crystal placed in the transparent quartz tube; and an infrared ray irradiation apparatus, which is arranged outside the transparent quartz tube and applies an infrared ray to the upper surface of the seed crystal placed in the transparent quartz tube as well as the powder raw material supplied into the transparent quartz tube by the powder raw material supply apparatus. The infrared ray melts the upper surface of the seed crystal and the powder raw material and subsequently the resulting melt solidifies on the seed crystal to provide a single crystal.

8. 发明申请

US20220349085A1 Single-Crystal Fiber Production Equipment and Single-Crystal Fiber Production Method 有权
公开(公告)号：US20220349085A1
公开(公告)日：2022-11-03
申请号：US17610871
申请日：2021-02-12
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B13/00 , C30B13/22 , C30B15/16 , C30B29/12 , C30B13/32
摘要： [Object] To provide a single-crystal fiber production equipment and a single-crystal fiber production method that do not at all require high precision control necessary for a conventional single-crystal production equipment, can very easily maintain a stable steady state for a long time, and can stably produce a long single crystal fiber having a length of several hundreds of meters or more.
[Solution] The single-crystal fiber production equipment is used to produce a single crystal fiber by irradiating an upper surface of a raw material rod with a laser beam within a chamber to form a melt, immersing a seed single crystal in the melt, and pulling the seed single crystal upward. The single-crystal fiber production equipment includes: a laser light source that emits the laser beam as a collimated beam; a pulling device configured to be upward and downward movable in a vertical direction with the seed single crystal held thereby; and a flat reflector that reflects the laser beam such that the reflected laser beam is incident vertically on the upper surface of the raw material rod. The upper surface of the raw material rod is irradiated with the laser beam such that the melt has a donut-shaped temperature distribution.

9. 发明申请

US20210222320A1 Method of Producing a Single-Crystal 有权
公开(公告)号：US20210222320A1
公开(公告)日：2021-07-22
申请号：US17222112
申请日：2021-04-05
申请人： Crystal Systems Corporation
发明人： Isamu Shindo
IPC分类号： C30B13/24 , C30B29/06 , C30B11/10 , C30B11/00 , C30B13/10
摘要： A method for producing a single crystal having a diameter of 200 mm or greater in which: (1) a seed crystal is provided; (2) an upper surface of the seed crystal is melted with an infrared ray supplied obliquely from above to create a melt covering the upper surface of the seed crystal; and (3) a powder raw material is supplied from above the seed crystal onto an area of the melt that is 90% or less of a diameter of the seed crystal, and the powder raw material supplied onto the melt is melted with the infrared ray supplied obliquely from above to melt the powder raw material while, simultaneously, a lower surface of the melt is solidified on the seed crystal. The infrared ray is applied to an area of the melt that is within 90% of the diameter of the seed crystal.

10. 发明申请

US20210222318A1 Single-Crystal Production Equipment and Single-Crystal Production Method 有权
公开(公告)号：US20210222318A1
公开(公告)日：2021-07-22
申请号：US16303254
申请日：2018-03-29
申请人： Crystal Systems Corporation
发明人： Isamu Shindo , Masayuki Habu
IPC分类号： C30B11/10 , C30B11/00
摘要： Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration. Provided is a single-crystal production equipment including, at least: a granular raw material supply apparatus which supplies a certain amount of a granular raw material downward; a granular raw material melting apparatus which heats and melts the granular raw material and supplies the thus obtained raw material melt downward; and a crystallization apparatus which allows a single crystal to precipitate out of a mixed melt that is formed upon receiving a melt formed by irradiating an infrared ray from a first infrared ray irradiation equipment to the upper surface of a seed single crystal and the raw material melt supplied from the granular raw material melting apparatus.

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