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1. 发明申请

US20180197828A1 VANISHING VIA FOR HARDWARE IP PROTECTION FROM REVERSE ENGINEERING 审中-公开
公开(公告)号：US20180197828A1
公开(公告)日：2018-07-12
申请号：US15863133
申请日：2018-01-05
申请人： University of Florida Research Foundation, Incorporated
发明人： Swarup Bhunia , Haoting Shen , Mark M. Tehranipoor , Domenic J. Forte , Navid Asadizanjani
IPC分类号： H01L23/00 , B81B7/00 , H01L23/522 , H01L23/525 , H01L23/528 , H01L23/532 , H01H59/00 , H01H29/02
CPC分类号： H01L23/573 , B81B7/0012 , B81B2201/01 , B81B2201/014 , B81B2201/018 , B81B2207/07 , H01H29/02 , H01H59/0009 , H01L23/5228 , H01L23/525 , H01L23/5252 , H01L23/528 , H01L23/53238
摘要： A semiconductor device can include a first metal trace, a first via disposed on the first metal trace, a second metal trace disposed on the first via, and an insulator interposed between the first metal trace and the first via. The insulator can be configured to lower an energy barrier or redistribute structure defects or charge carriers, such that the first metal trace and the first via are electrically connected to each other when power is applied. The semiconductor device can further include a dummy via disposed on the first metal trace.

2. 发明申请

US20130126317A1 MICRO-ELECTRO-MECHANICAL SWITCH BEAM CONSTRUCTION WITH MINIMIZED BEAM DISTORTION AND METHOD FOR CONSTRUCTING 有权
标题翻译：具有最小波束失真的微机电开关梁结构和构造方法
公开(公告)号：US20130126317A1
公开(公告)日：2013-05-23
申请号：US13741609
申请日：2013-01-15
申请人： Raymond GOGGIN , Padraig FITZGERALD
发明人： Raymond GOGGIN , Padraig FITZGERALD
IPC分类号： H01H57/00
CPC分类号： H01H57/00 , B81B7/0012 , B81B2201/014 , H01H59/0009
摘要： Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor, an anchor beam interface and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate. The anchor beam interface coupling the anchor to the hinge. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a voltage differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.
摘要翻译：公开了一种微电子机械开关，其包括耦合到衬底的具有栅极连接的衬底，源极连接，漏极连接和开关结构。开关结构包括梁构件，锚固件，锚梁接口和铰链。所述梁构件具有足以突出所述栅极连接和所述排出连接的长度。将开关结构连接到基板上。将锚杆与铰链连接的锚梁接口。铰链将梁构件沿着锚定件的长度在相应位置处联接到锚固件，铰链响应于门和梁构件之间建立的电压差而弯曲。开关结构在靠近铰链的区域中在基板和锚之间具有间隙。

3. 发明授权

US08368490B2 Micro-electro-mechanical switch beam construction with minimized beam distortion and method for constructing 有权
标题翻译：微电机械开关梁结构，最小化波束失真和构造方法
公开(公告)号：US08368490B2
公开(公告)日：2013-02-05
申请号：US12755285
申请日：2010-04-06
申请人： Raymond Goggin , Padraig Fitzgerald
发明人： Raymond Goggin , Padraig Fitzgerald
IPC分类号： H01H51/22
CPC分类号： H01H57/00 , B81B7/0012 , B81B2201/014 , H01H59/0009
摘要： Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor, an anchor beam interface and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate. The anchor beam interface coupling the anchor to the hinge. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a voltage differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.
摘要翻译：公开了一种微电子机械开关，其包括耦合到衬底的具有栅极连接的衬底，源极连接，漏极连接和开关结构。开关结构包括梁构件，锚固件，锚梁接口和铰链。所述梁构件具有足以突出所述栅极连接和所述排出连接的长度。将开关结构连接到基板上。将锚杆与铰链连接的锚梁接口。铰链将梁构件沿着锚定件的长度在相应位置处联接到锚固件，铰链响应于门和梁构件之间建立的电压差而弯曲。开关结构在接近铰链的区域中在基板和锚之间具有间隙。

4. 发明申请

US20100207216A1 CORROSION-RESISTANT MEMS COMPONENT AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：耐腐蚀MEMS组件及其生产方法
公开(公告)号：US20100207216A1
公开(公告)日：2010-08-19
申请号：US12452426
申请日：2008-06-27
申请人： Jürgen Drews , Karl-Ernst Ehwald , Katrin Schulz
发明人： Jürgen Drews , Karl-Ernst Ehwald , Katrin Schulz
IPC分类号： H01L29/84 , H01L21/30
CPC分类号： B81B7/0012 , G01N11/16
摘要： An MEMS component including a monolithically integrated electronic component with a multi-plane conductor track layer stack which is arranged on a substrate and into which is integrated a cantilevered elastically movable metallic actuator which is arranged in the multi-plane conductor track layer stack at the level of a conductor track plane and is connected by via contacts to conductor track planes which are arranged thereabove or therebeneath and which apart from an opening in the region of the actuator are separated from the conductor track plane of the actuator by a respective intermediate plane insulator layer, wherein the actuator is formed from a metallically conductive layer or layer combination which is resistant to corrosive liquids or gases and which contains titanium nitride or consists of titanium nitride.
摘要翻译：一种MEMS组件，包括具有多平面导体轨道层堆叠的单片集成电子部件，其布置在基板上并且集成有悬臂弹性可移动金属致动器，其布置在多平面导体轨道层堆叠中的导体轨道平面，并且通过通孔触点连接到布置在其上方或其下方的导体轨道平面，并且除了致动器的区域中的开口之外，通过相应的中间平面绝缘体层与致动器的导体轨道平面分离其中所述致动器由对腐蚀性液体或气体具有耐受氮化钛或由氮化钛组成的金属导电层或层组合形成。

5. 发明申请

US20100165314A1 MEMS DEVICE WITH CONTROLLED GAS SPACE CHEMISTRY 有权
标题翻译：具有控制气体空间化学的MEMS器件
公开(公告)号：US20100165314A1
公开(公告)日：2010-07-01
申请号：US10833527
申请日：2004-04-28
申请人： Walter M. Duncan , Simon Joshua Jacobs , Michael R. Douglass , Richard O. Gale
发明人： Walter M. Duncan , Simon Joshua Jacobs , Michael R. Douglass , Richard O. Gale
IPC分类号： G03B27/54 , G02B26/00
CPC分类号： G02B1/14 , B81B7/0012 , B81B2201/042 , G02B1/105 , G02B26/0833 , G03B27/42 , G03F7/70291 , G03F7/70983
摘要： A process for protecting a MEMS device used in a UV illuminated application from damage due to a photochemical activation between the UV flux and package gas constituents, formed from the out-gassing of various lubricants and passivants put in the device package to prevent sticking of the MEMS device's moving parts. This process coats the exposed surfaces of the MEMS device and package's optical window surfaces with a metal-halide film to eliminate this photochemical activation and therefore significantly extend the reliability and lifetime of the MEMS device.
摘要翻译：用于保护在紫外线照射应用中使用的MEMS器件的过程不会由于UV通量和封装气体成分之间的光化学活化而损坏，所述UV通量和封装气体成分由放置在器件封装中的各种润滑剂和钝化剂的排出物形成，以防止粘附 MEMS器件的运动部件。该方法用金属卤化物膜涂覆MEMS器件和封装的光学窗表面的暴露表面以消除该光化学活化，因此显着地延长了MEMS器件的可靠性和使用寿命。

6. 发明授权

US07504276B2 Micro device having micro system structure and method for method for manufacturing the same 有权
标题翻译：具有微系统结构的微型器件及其制造方法
公开(公告)号：US07504276B2
公开(公告)日：2009-03-17
申请号：US11196352
申请日：2005-08-04
申请人： Yuta Hasebe , Toshiki Ito , Yasutoshi Suzuki
发明人： Yuta Hasebe , Toshiki Ito , Yasutoshi Suzuki
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： B81B7/0012 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2924/16195 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A micro device having a micro system structure includes a protection film disposed on the micro system structure for protecting from a particle. The protection film includes a first protection film having a Vickers hardness equal to or larger than 2500 Hv or a nano indentation hardness equal to or larger than 13.64 GPa. The first protection film has a thickness in a range between 0.1 μm and 30 μm. The protection film has a total stress defined as a product of a film stress and a film thickness, and the total stress is equal to or smaller than 700 N/m.
摘要翻译：具有微系统结构的微器件包括设置在微系统结构上用于保护颗粒的保护膜。保护膜包括维氏硬度等于或大于2500Hv或纳米压痕硬度等于或大于13.64GPa的第一保护膜。第一保护膜的厚度在0.1μm和30μm之间的范围内。保护膜具有被定义为膜应力和膜厚度的乘积的总应力，总应力等于或小于700N / m。

7. 发明授权

US07405861B2 Method and device for protecting interferometric modulators from electrostatic discharge 失效
标题翻译：用于保护干涉式调制器免受静电放电的方法和装置
公开(公告)号：US07405861B2
公开(公告)日：2008-07-29
申请号：US11119651
申请日：2005-05-02
申请人： Philip D. Floyd
发明人： Philip D. Floyd
IPC分类号： G02B26/00 , G02B26/08
CPC分类号： H01L27/0248 , B81B7/0012 , B81B2201/047 , G02B26/001
摘要： A MEMS device such as an interferometric modulator includes an integrated ESD protection element capable of shunting to ground an excess current carried by an electrical conductor in the MEMS device. The protection element may be a diode and may be formed by depositing a plurality of doped semiconductor layers over the substrate on which the MEMS device is formed.
摘要翻译：诸如干涉式调制器之类的MEMS器件包括集成的ESD保护元件，其能够将由MEMS器件中的电导体携带的过剩电流分流到地。保护元件可以是二极管，并且可以通过在其上形成MEMS器件的衬底上沉积多个掺杂半导体层来形成。

8. 发明申请

US20070160247A1 Heat-resistant electret condenser microphone 失效
标题翻译：耐热驻极体电容话筒
公开(公告)号：US20070160247A1
公开(公告)日：2007-07-12
申请号：US10589281
申请日：2005-08-04
申请人： Katsuhiro Makihata , Hiroshi Ogura , Yoshinobu Yasuno
发明人： Katsuhiro Makihata , Hiroshi Ogura , Yoshinobu Yasuno
IPC分类号： H04R11/04
CPC分类号： B81B7/0012 , B81B2201/0257 , H04R19/016
摘要： The outer face of a case which accommodates a whole microphone is coated by a material having a heat conductivity which is lower than that of a metal, and a material transforming temperature which is higher than the charge dissipating temperature of a dielectric layer for forming an internal electret, and which is higher than 260° C., so that the internal temperature rise can be mitigated by the thermal resistance and the thermal capacity of the whole interior. When a microphone is attached to an application equipment, particularly, the microphone may be passed through a reflow solder bath for a short time period. A heat-resistant structure which can prevent the function from being impaired by a high temperature in the period is provided.
摘要翻译：容纳整个麦克风的壳体的外表面涂覆有导热率低于金属的材料，并且材料转化温度高于用于形成内部的介电层的电荷消散温度驻极体，并且高于260℃，使得内部温度升高可以通过整个内部的耐热性和热容量来缓解。当麦克风连接到应用设备时，特别地，麦克风可以在短时间内通过回流焊锡浴。提供了能够防止该功能在该时间段内被高温损坏的耐热结构。

9. 发明申请

US20050194662A1 Semiconductor component and micromechanical structure 审中-公开
标题翻译：半导体元件和微机械结构
公开(公告)号：US20050194662A1
公开(公告)日：2005-09-08
申请号：US11039068
申请日：2005-01-20
申请人： Gerhard Schmidt , Rudolf Zelsacher , Michael Bar , Wolfgang Werner , Bernhard Winkler
发明人： Gerhard Schmidt , Rudolf Zelsacher , Michael Bar , Wolfgang Werner , Bernhard Winkler
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , G01C19/56 , H01L23/00 , H01L23/29 , H01L23/58 , H01L29/84
CPC分类号： H01L23/564 , B81B7/0012 , B81C2201/0169 , H01L2924/0002 , H01L2924/13055 , H01L2924/00
摘要： A semiconductor component (1) includes a substrate, an active area (2), formed in/on the substrate, and a passivation layer (5) which is provided at least above part of the active area (2). The passivation layer (5) at least partially comprises amorphous, hydrogen-doped carbon. The provision of a passivation layer of this type allows the semiconductor component (1) to be effectively protected against environmental influences.
摘要翻译：半导体部件（1）包括衬底，形成在衬底中或衬底上的有源区（2）以及设置在有源区（2）的至少上方的钝化层（5）。钝化层（5）至少部分地包括无定形的氢掺杂碳。提供这种钝化层可以有效地保护半导体部件（1）免受环境影响。

10. 发明申请

US20040089069A1 High-G acceleration protection by caging 失效
标题翻译：高G加速保护
公开(公告)号：US20040089069A1
公开(公告)日：2004-05-13
申请号：US10292785
申请日：2002-11-12
申请人： Honeywell International Inc.
发明人： Mark W. Weber , William A. Harris , Max C. Glenn
IPC分类号： G01P015/13
CPC分类号： B81B7/0012 , G01C19/5719 , G01P15/08 , G01P15/097 , G01P2015/0814
摘要： For use in a MEMS device having a suspended proof mass, a method and apparatus for securing the MEMS device during a period of high acceleration. The method may include applying a DC voltage between the proof mass and a non-suspended structure of the device. The non-suspended structure may be mounted on a substrate, and the substrate or the non-suspended structure may be electrically isolated from the proof mass by an insulating layer or by one or more islands. Applying the DC voltage creates an electrostatic force that moves the proof mass toward (or holds the proof mass near) the substrate. Movement of the proof mass may be limited by mechanical contact between the proof mass and the insulating layer, the one or more islands, or by a cage mounted on the substrate during the period of high acceleration.
摘要翻译：用于具有悬挂质量的MEMS器件，用于在高加速度的时段期间固定MEMS器件的方法和装置。所述方法可以包括在所述检测质量块和所述器件的非悬浮结构之间施加DC电压。非悬挂结构可以安装在基板上，并且基板或非悬挂结构可以通过绝缘层或一个或多个岛与证明物质电隔离。施加直流电压会产生一个静电力，使静电质量向基板移动（或保持质量附近）。检测质量块的移动可以通过在高加速度期间的检测质量体与绝缘层，一个或多个岛状体之间的机械接触或由安装在基板上的保持架来限制。

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