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1. 发明申请

US20200075967A1 COLLECTOR PLATE AND REDOX FLOW BATTERY 审中-公开
公开(公告)号：US20200075967A1
公开(公告)日：2020-03-05
申请号：US16466403
申请日：2017-12-06
申请人： SHOW A DENKO K.K.
发明人： Masatoshi ICHIKAWA , Keizo ISEKI , Kenzo HANAWA
IPC分类号： H01M8/0258 , H01M8/18
摘要： This collector plate includes a plurality of grooves through which an electrolyte is capable of flowing, and which are provided in at least one surface of the collector plate, in which a surface roughness (Ra) of an internal surface of each groove is smaller than a surface roughness (Ra) of a first surface connecting together the grooves.

2. 发明授权

US08999580B2 Composite graphite particles and lithium rechargeable battery using the same 有权
标题翻译：复合石墨颗粒和锂可充电电池使用相同
公开(公告)号：US08999580B2
公开(公告)日：2015-04-07
申请号：US12097001
申请日：2006-12-20
申请人： Chiaki Sotowa , Masataka Takeuchi
发明人： Chiaki Sotowa , Masataka Takeuchi
IPC分类号： H01M4/13 , H01M4/58 , H01M10/0525 , H01M4/133 , H01M4/587 , H01M10/0569 , H01M4/02
CPC分类号： H01M10/0525 , H01M4/133 , H01M4/587 , H01M10/0569 , H01M2004/021 , Y02E60/122 , Y02P70/54 , Y02T10/7011 , Y10T428/2991
摘要： The invention provides composite graphite particles, comprising a core material consisting of graphite having a interlayer distance d(002) of 0.337 nm or less and a surface layer consisting of graphite in which the intensity ratio ID/IG (R value) between the peak intensities (ID) in a range of 1300 to 1400 cm−1 and ( IG) in a range of 1580 to 1620 cm−1 as measured by Raman scattering spectroscopy is 0.3 or higher, wherein the peak intensity ratio I110/I004 between the peak intensities (I110)of face (110) and (I004)of face (004) obtained by XRD measurement on the graphite crystal is 0.15 or higher when the graphite has been mixed with a binder and pressure-molded to a density of 1.55 to 1.65 g/cm3, which composite graphite particles are useful in a secondary battery negative electrode having a high capacity, high charge/discharge characteristics and an excellent charging property, and also provides a paste for negative electrode, a negative electrode and a lithium secondary battery using the composite graphite.
摘要翻译：本发明提供复合石墨颗粒，其包含由石墨构成的芯材，其中层间距离d（002）为0.337nm或更小，以及由石墨组成的表面层，其中峰强度之间的强度比ID / IG（R值）通过拉曼散射光谱法测定的范围为1300〜1400cm -1的范围（（IG））为1580〜1620cm -1的范围（IG）为0.3以上，峰强度之间的峰强度比I110 / I004 当将石墨与粘合剂混合并加压成型为1.55至1.65克的密度时，在石墨晶体上通过XRD测量获得的面（004）的面（110）和（I004）的（I110）为0.15以上 / cm3，该复合石墨颗粒可用于具有高容量，高充电/放电特性和优异的充电特性的二次电池负极中，并且还提供负极，负极和锂二次电池用糊料使用复合石墨。

3. 发明授权

US07393982B2 Processes for preparing β-diketone compound, metal complex thereof and metallic compound 失效
标题翻译：制备β-二酮化合物，其金属络合物和金属化合物的方法
公开(公告)号：US07393982B2
公开(公告)日：2008-07-01
申请号：US10559809
申请日：2004-05-20
申请人： Makoto Saito , Takashi Ueda , Takashi Tani , Keiichi Nakamura
发明人： Makoto Saito , Takashi Ueda , Takashi Tani , Keiichi Nakamura
IPC分类号： C07C45/72
CPC分类号： C07C49/92 , C07C45/455 , C07C45/77 , C07C45/80 , C07C49/12
摘要： Disclosed is a process for preparing a β-diketone compound such as 2,6-dimethyl-3,5-heptanedione, which comprises reacting an ester compound such as an alkyl isobutyrate with a ketone compound such as 3-methylbutanone in the presence of an alkali metal alkoxide as a catalyst. The process comprises a step 1 in which an ester compound CR1R2R3COOQ is reacted with a ketone compound CR4R5R6COCH2R7 using an alkali metal alkoxide catalyst to give a β-diketone compound CR1R2R2R3COCHR4R5R6. (In the formulae, R7 is hydrogen or an alkyl group of 1 to 4 carbon atoms while others are each independently hydrogen or an alkyl group of 1 to 3 carbon atoms, and at least one of R1 to R6 is hydrogen.)
摘要翻译：公开了一种制备2,6-二甲基-3,5-庚二酮的β-二酮化合物的方法，该方法包括使异氰酸烷基酯等酯化合物与3-甲基丁酮等酮化合物在碱金属醇盐作为催化剂。该方法包括步骤1，其中酯化合物CR 1 R 2 SO 3 COOQ与酮化合物CR 4 使用碱金属醇盐催化剂，得到β5，R 6，R 5，R 7，R 7，二酮化合物CR 1 1 R 2 R 2 R 3 SO 3 R 4 R 4 SUP> 5 6 （式中，R 7为氢或1〜4个碳原子的烷基，其余各自独立地为氢或1〜3个碳原子的烷基，R 1〜 SUP> 1至R 6是氢。）

4. 发明申请

US20070148803A1 Production method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070148803A1
公开(公告)日：2007-06-28
申请号：US10580107
申请日：2005-10-05
申请人： Kenji Yakushiji , Katsuki Kusunoki , Hisayuki Miki
发明人： Kenji Yakushiji , Katsuki Kusunoki , Hisayuki Miki
IPC分类号： H01L21/00
CPC分类号： H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/78 , H01L33/0095 , H01L33/20
摘要： An object of the present invention is to provide a method of producing a Group III nitride semiconductor device having a chip form which is pentagonal or more highly polygonal maintaining good area efficiency and at a low cost. The inventive method of producing a Group III nitride semiconductor device having a chip shape which is a pentagonal or more highly polygonal shape comprises a first step of epitaxially growing a Group III nitride semiconductor on a substrate to form a semiconductor wafer; a second step of irradiating said semiconductor wafer with a laser beam to form separation grooves; a third step of grinding and/or polishing the main surface side differently from the epitaxially grown main surface of the substrate; and a fourth step of division into individual chips by applying stress to said separation grooves.
摘要翻译：本发明的目的是提供一种具有五边形或更高多边形的芯片形式的维持良好的面积效率和低成本的III族氮化物半导体器件的方法。制造具有五边形或更高多边形形状的芯片形状的III族氮化物半导体器件的本发明的方法包括在衬底上外延生长III族氮化物半导体以形成半导体晶片的第一步骤; 用激光束照射所述半导体晶片以形成分离槽的第二步骤; 与衬底的外延生长的主表面不同的研磨和/或抛光主表面侧的第三步骤; 以及通过向所述分离槽施加应力的第四步骤，分割成单个碎屑。

5. 发明授权

US11154902B2 Transparent conductive substrate and method for producing same 有权
公开(公告)号：US11154902B2
公开(公告)日：2021-10-26
申请号：US16465317
申请日：2017-11-29
申请人： SHOW A DENKO K.K.
发明人： Masahiko Toba , Eri Nakazawa , Shigeru Yamaki
IPC分类号： B32B27/40 , B05D5/12 , B05D1/36 , B05D7/24 , B32B7/02 , B32B27/18 , C08G59/42 , C08K3/08 , C08K7/06 , C08L39/02 , H01B5/14 , H01B13/22 , H05K1/09 , B32B27/38 , B32B27/32 , B82Y10/00 , B82Y30/00
摘要： To provide: a transparent conductive substrate containing silver nanowires and having excellent optical characteristics, electrical characteristics and light resistance; and a method for producing the same. A transparent conductive substrate characterized by comprising: a substrate; a transparent conductive film formed on at least one principal surface of the substrate, and containing a binder resin and conductive fibers; and a protective film formed on the transparent conductive film, wherein the thermal decomposition starting temperature of the binder resin is 210° C. or higher, and the protective film is a thermal-cured film obtained using a thermosetting resin.

6. 发明授权

US10975227B2 Curing accelerator and radical polymerizable resin composition 有权
公开(公告)号：US10975227B2
公开(公告)日：2021-04-13
申请号：US16341151
申请日：2017-09-04
申请人： SHOW A DENKO K.K.
发明人： Yoichiro Sakaguchi , Takuya Minami , Yoshishige Okuno , Atsushi Umino , Yoshitaka Ishibashi
IPC分类号： C08F20/00 , C08K5/548
摘要： A curing accelerator can exhibit good curing acceleration performance and is excellent in storage stability, while maintaining sufficient pot life in a curing reaction of radical-polymerizable resins, and a radical-polymerizable resin composition uses the curing accelerator. The curing accelerator for radical-polymerizable resins includes a metal-containing compound (A), a thiol compound (B) and an aprotic solvent (C) having a dielectric constant of 10 or less, wherein the metal-containing compound (A) is one or more compounds selected from a metal soap (A1) and a β-diketone skeleton-having metal complex (A2), the thiol compound (B) is one or more compounds selected from a mono-functional primary thiol compound (B1), a secondary thiol compound (B2) and a tertiary thiol compound (B3), and the content of the aprotic solvent (C) is 10 to 1,000 parts by mass relative to 100 parts by mass of the total of the metal-containing compound (A) and the thiol compound (B).

7. 发明授权

US09789538B2 Method for producing ultrafine tungsten powder 有权
公开(公告)号：US09789538B2
公开(公告)日：2017-10-17
申请号：US14652163
申请日：2013-09-20
申请人： SHOWA DENKO K.K.
发明人： Kazumi Naito , Shoji Yabe
IPC分类号： B22F9/16 , C23C8/10 , B22F1/02 , C23C8/42 , C23C8/02 , C25D5/34 , C25D7/00 , C22C27/04 , B22F9/04 , H01G9/052
CPC分类号： B22F1/02 , B22F9/04 , B22F2998/10 , B22F2999/00 , C22C27/04 , C23C8/02 , C23C8/42 , C25D5/34 , C25D7/006 , H01G9/052 , H01G9/0525 , B22F1/0088
摘要： A method for finely powdering tungsten powder, which includes: a process for classifying a material tungsten powder into a fine powder having a relatively small average particle diameter and a coarse powder having a relatively large average particle diameter; an oxidation process for forming an oxide film on the particle surface of the coarse powder; and an alkali treatment process for removing the oxide film formed in the oxidation process and a natural oxide film formed on the fine powder with an alkali aqueous solution. Also disclosed is a method for producing ultrafine tungsten powder, which includes obtaining tungsten powder having an average particle diameter of 0.04 to 0.4 μm and a BET specific surface area of 5 to 15 m2/g by the above method for finely powdering.

8. 发明授权

US09248432B2 Titanium oxide photocatalyst having copper compounds supported thereon, and method for producing same 有权
标题翻译：其上负载有铜化合物的氧化钛光催化剂及其制造方法
公开(公告)号：US09248432B2
公开(公告)日：2016-02-02
申请号：US13882425
申请日：2012-06-22
申请人： Kazuhito Hashimoto , Masahiro Miyauchi , Xiaoqing Qiu , Kayano Sunada , Yasushi Kuroda , Yasuhiro Hosogi , Ding Li , Yoshiki Shimodaira
发明人： Kazuhito Hashimoto , Masahiro Miyauchi , Xiaoqing Qiu , Kayano Sunada , Yasushi Kuroda , Yasuhiro Hosogi , Ding Li , Yoshiki Shimodaira
IPC分类号： B01J23/72 , A01N59/20 , B01J21/06 , B01J35/00 , B01J37/06 , B01J37/16 , B01J37/34 , B01J37/00 , C09C1/36 , B01J37/04 , B01J35/10 , B82Y30/00 , B01J37/03 , B01J37/08
CPC分类号： B01J23/72 , A01N59/20 , B01J21/063 , B01J35/002 , B01J35/004 , B01J35/1014 , B01J37/0009 , B01J37/035 , B01J37/04 , B01J37/06 , B01J37/08 , B01J37/16 , B01J37/344 , B82Y30/00 , C01P2002/80 , C01P2004/64 , C01P2006/12 , C09C1/3653 , A01N25/08 , A01N2300/00
摘要： A copper compound-carried titanium oxide photocatalyst which is excellent in a photocatalytic activity and a viral inactivation property and a production process for the same can be provided by a copper compound-carried titanium oxide photocatalyst comprising titanium oxide in which a content of rutile type titanium oxide is 50% by mole or more and a monovalent copper compound and a divalent copper compound which are carried on a surface of the titanium oxide described above and a production process for a copper compound-carried titanium oxide photocatalyst, comprising a step of carrying a monovalent copper compound and a divalent copper compound on a surface of titanium oxide in which a content of rutile type titanium oxide is 50% by mole or more.
摘要翻译：具有优异的光催化活性和病毒灭活性的铜化合物负载的氧化钛光催化剂及其制备方法可以通过包含二氧化钛的铜化合物负载的氧化钛光催化剂提供，其中金红石型钛氧化物为50摩尔％以上，并且载持在上述氧化钛的表面上的一价铜化合物和二价铜化合物以及含有铜化合物的氧化钛光催化剂的制造方法，其特征在于，在金红石型氧化钛的含量为50摩尔％以上的氧化钛的表面上具有一价铜化合物和二价铜化合物。

9. 发明授权

US08496903B2 Catalyst, production process therefor and use thereof 有权
标题翻译：催化剂及其制备方法及其用途
公开(公告)号：US08496903B2
公开(公告)日：2013-07-30
申请号：US12863400
申请日：2009-01-16
申请人： Ryuji Monden , Tadatoshi Kurozumi , Toshikazu Shishikura
发明人： Ryuji Monden , Tadatoshi Kurozumi , Toshikazu Shishikura
IPC分类号： C01B21/12 , B01J27/22 , B01J27/228 , B01J27/24
CPC分类号： H01M4/9016 , B01J27/22 , B01J27/24 , H01M4/8828 , H01M4/90 , H01M2008/1095
摘要： Catalysts of the invention are not corroded in acidic electrolytes or at high potential and have excellent durability and high oxygen reducing ability. The catalysts include a niobium oxycarbonitride represented by a compositional formula NbCxNyOz (wherein x, y and z represent a ratio of the numbers of the atoms, 0.05≦x
摘要翻译：本发明的催化剂不会在酸性电解质中或高电位下腐蚀，具有优异的耐久性和高的氧还原能力。催化剂包括由组成式NbC x N y O z表示的铌碳氮氧化物（其中x，y和z表示原子数，0.05×x <0.7，0.01≤y≤0.7，0.4@z <2.5,1.0

10. 发明授权

US07875474B2 Gallium nitride-based compound semiconductor light-emitting device and production method thereof 有权
标题翻译：氮化镓系化合物半导体发光元件及其制造方法
公开(公告)号：US07875474B2
公开(公告)日：2011-01-25
申请号：US12065564
申请日：2006-09-05
申请人： Noritaka Muraki , Hironao Shinohara , Hiroshi Osawa
发明人： Noritaka Muraki , Hironao Shinohara , Hiroshi Osawa
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0062 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2933/0091 , H01L2924/00014
摘要： The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.
摘要翻译：本发明提供了一种具有优异的光提取效率的氮化镓基化合物半导体发光器件及其制造方法。从氮化镓系化合物半导体获得的发光元件包括：基板; 依次层叠在基板11上的n型半导体层13，发光层14和p型半导体层15，层叠在p型半导体层15上的透光性正极16; 设置在透光正极16上的正极焊盘17; 以及在n型半导体层13上设置的负极接合焊盘18，其中至少形成在p型半导体层15的表面15a的一部分上的无序的不平坦表面。

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