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1. 发明授权

US08882971B2 Sputtering apparatus and manufacturing method of semiconductor light-emitting element 有权
标题翻译：半导体发光元件的溅射装置及其制造方法
公开(公告)号：US08882971B2
公开(公告)日：2014-11-11
申请号：US12987828
申请日：2011-01-10
申请人： Hisayuki Miki , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki
IPC分类号： C23C14/06 , C23C14/34 , H01L33/00 , C23C14/54
CPC分类号： C23C14/34 , C23C14/0647 , C23C14/541 , H01L33/007
摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.
摘要翻译：溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。溅射装置（1）包括用于加热基板（110）的加热器（65）。通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。还公开了使用溅射装置制造半导体发光元件的方法。

2. 发明授权

US08557092B2 Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus 有权
标题翻译：用于溅射沉积设备的溅射沉积设备和背板
公开(公告)号：US08557092B2
公开(公告)日：2013-10-15
申请号：US12374974
申请日：2007-10-19
申请人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： C23C14/56 , C23C14/06 , C23C14/34
CPC分类号： C23C14/3407 , C23C14/0617
摘要： A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°.
摘要翻译：提供了能够稳定地保持Ga的溅射沉积设备中使用的背板和设置有背板的溅射沉积设备。这种用于溅射沉积设备的背板是用于保持含有Ga的靶材料的背板，并且至少其与目标材料接触的接触表面由易接触的材料构成，该材料具有接触角以Ga为液态不超过90°。

3. 发明授权

US08550645B2 Illumination device for display device, and display device 有权
标题翻译：显示装置的照明装置和显示装置
公开(公告)号：US08550645B2
公开(公告)日：2013-10-08
申请号：US13131494
申请日：2009-11-25
申请人： Hisayuki Miki , Kousuke Shioi , Naoto Hirosaki
发明人： Hisayuki Miki , Kousuke Shioi , Naoto Hirosaki
IPC分类号： G09F13/04 , G09F13/08 , H01J1/62 , H01J63/04
CPC分类号： C09K11/7734 , C04B35/597 , C04B35/6262 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3852 , C04B2235/3865 , C04B2235/3878 , C04B2235/3895 , C04B2235/5436 , C04B2235/5445 , C04B2235/761 , C09K11/0883 , H01L33/486 , H01L33/502 , H01L33/504 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/15747 , H01L2924/181 , H05B33/14 , Y02B20/181 , Y10T428/2993 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An illumination device for a display device, which is formed from a substrate and a plurality of white light-emitting devices disposed on top of the substrate, and can be used as a backlight for a liquid crystal display panel, wherein the white light-emitting devices have a light source and a phosphor that is excited by the light source and emits light, and a fluorescent material with a composition represented by a general formula: M(0)aM(1)bM(2)x−(vm+n)M(3)(vm+n)−yOnNz−n is used as the phosphor.
摘要翻译：一种用于显示装置的照明装置，其由基板和设置在基板顶部的多个白色发光装置形成，并且可以用作液晶显示面板的背光源，其中白色发光器件具有由光源激发并发光的光源和荧光体，以及具有由以下通式表示的组成的荧光材料：M（0）aM（1）bM（2）x-（vm + n ）M（3）（vm + n）-yOnNz-n用作荧光体。

4. 发明授权

US08097482B2 Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp 有权
标题翻译： III族氮化物半导体的制造方法，III族氮化物半导体发光元件的制造方法，III族氮化物半导体发光元件及灯
公开(公告)号：US08097482B2
公开(公告)日：2012-01-17
申请号：US12438047
申请日：2008-06-03
申请人： Kenzo Hanawa , Yasumasa Sasaki , Hisayuki Miki
发明人： Kenzo Hanawa , Yasumasa Sasaki , Hisayuki Miki
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L21/02631 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/1305 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.
摘要翻译：一种本发明的III族氮化物半导体的制造方法，其特征在于，包括：溅射工序，用于将基板和靶设置在室内，并通过反应溅射法在所述基板上形成掺杂了Mg的III族氮化物半导体，步骤包括各自的子步骤：用于在掺杂Mg时形成半导体薄膜的成膜步骤; 以及等离子体处理步骤，用于对在成膜步骤中形成的半导体薄膜施加惰性气体等离子体处理，并且通过层合半导体薄膜而形成第III族氮化物半导体，该方法是通过交替重复成膜步骤和等离子体处理步骤。

5. 发明申请

US20110198212A1 SPUTTERING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
标题翻译：半导体发光元件的溅射装置和制造方法
公开(公告)号：US20110198212A1
公开(公告)日：2011-08-18
申请号：US12987828
申请日：2011-01-10
申请人： Hisayuki MIKI , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki
发明人： Hisayuki MIKI , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , C23C14/0647 , C23C14/541 , H01L33/007
摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.
摘要翻译：溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。溅射装置（1）包括用于加热基板（110）的加热器（65）。通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。还公开了使用溅射装置制造半导体发光元件的方法。

6. 发明申请

US20110084307A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：用于生产III族氮化物半导体发光器件的方法，III族氮化物半导体发光器件和灯
公开(公告)号：US20110084307A1
公开(公告)日：2011-04-14
申请号：US12996329
申请日：2009-06-03
申请人： Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
发明人： Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L21/02458 , C23C14/022 , C23C14/0617 , C30B25/183 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02658 , H01L33/007 , H01L33/12 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x
摘要翻译：本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法在基板（11）上层叠由III族氮化物构成的缓冲层（12）的n型半导体层（14）的发光装置，其特征在于，包括：基底层（14a），发光层（15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0＆nlE; x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。

7. 发明授权

US07888687B2 Electrode for semiconductor light emitting device 有权
标题翻译：半导体发光装置用电极
公开(公告)号：US07888687B2
公开(公告)日：2011-02-15
申请号：US12066194
申请日：2006-09-06
申请人： Hisayuki Miki
发明人： Hisayuki Miki
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32 , H01L33/42
摘要： An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN-based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.
摘要翻译：本发明的目的是提供一种能够以低驱动电压产生强大的发光而不降低结晶度的电极。用于半导体发光器件的电极具有在发光器件的同一侧上具有n型或p型电极和相对的p型或n型电极的结构。两个电极都包括接合焊盘和透明导电层。优选地，发光器件是GaN基半导体发光器件。透明导电层的材料是诸如ITO的金属氧化物或诸如Al，Ni的金属。

8. 发明申请

US20100301379A1 METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：制造III族氮化物半导体的方法，制造III族氮化物半导体发光器件的方法，III族氮化物半导体发光器件和灯
公开(公告)号：US20100301379A1
公开(公告)日：2010-12-02
申请号：US12745304
申请日：2008-11-21
申请人： Yasunori Yokoyama , Hisayuki Miki
发明人： Yasunori Yokoyama , Hisayuki Miki
IPC分类号： H01L33/30 , H01L33/02 , C23C14/34
CPC分类号： C30B29/403 , C30B23/02 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/06 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2924/1305 , H01L2924/181 , H01L2924/30111 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.
摘要翻译：本发明的III族氮化物半导体的制造方法包括溅射工序，在基板和含Ga元素的靶的室中通过反应溅射法在基板上形成单晶III族氮化物半导体其中所述溅射步骤包括各自的子步骤：在将衬底的温度设定为温度T1的同时进行III族氮化物半导体的成膜的第一溅射步骤; 以及在将衬底的温度降低到低于温度T1的温度T2的同时继续进行III族氮化物半导体的成膜的第二溅射步骤。

9. 发明申请

US20100219445A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP 审中-公开
标题翻译： III类氮化物半导体发光器件，其制造方法和灯
公开(公告)号：US20100219445A1
公开(公告)日：2010-09-02
申请号：US12680445
申请日：2008-09-09
申请人： Yasunori Yokoyama , Hisayuki Miki
发明人： Yasunori Yokoyama , Hisayuki Miki
IPC分类号： H01L33/30 , H01L33/00
CPC分类号： H01L33/12 , H01L33/025 , H01L33/06 , H01L33/32 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/1305 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A buffer layer 12 composed of at least a Group III nitride compound is laminated on a substrate 11 composed of sapphire, and an n-type semiconductor layer 14, a light-emitting layer 15, and a p-type semiconductor layer 16 are laminated in a sequential manner on the buffer layer 12. The buffer layer 12 is formed by means of a reactive sputtering method, the buffer layer 12 contains oxygen, and the oxygen concentration in the buffer layer 12 is 1 atomic percent or lower. There are provided a Group III nitride compound semiconductor light-emitting device that comprises the buffer layer formed on the substrate by means of the reactive sputtering method, enables formation of a Group III nitride semiconductor having favorable crystallinity thereon, and has a superior light emission property, and a manufacturing method thereof, and a lamp.
摘要翻译：在由蓝宝石构成的基板11上层叠由至少III族氮化物化合物构成的缓冲层12，并且将n型半导体层14，发光层15和p型半导体层16层叠在缓冲层12的顺序方式。缓冲层12通过反应溅射法形成，缓冲层12含有氧，缓冲层12中的氧浓度为1原子％以下。提供了通过反应溅射法形成在衬底上的缓冲层的III族氮化物化合物半导体发光器件，能够在其上形成具有良好结晶性的III族氮化物半导体，并且具有优异的发光特性及其制造方法以及灯。

10. 发明授权

US07655491B2 P-type Group III nitride semiconductor and production method thereof 有权
标题翻译： P型III族氮化物半导体及其制造方法
公开(公告)号：US07655491B2
公开(公告)日：2010-02-02
申请号：US10585999
申请日：2005-05-11
申请人： Hisayuki Miki , Hitoshi Takeda
发明人： Hisayuki Miki , Hitoshi Takeda
IPC分类号： H01L21/00
CPC分类号： C30B29/403 , C23C16/303 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0075
摘要： An object of the present invention is to provide a method for producing a p-type Group III nitride semiconductor which can be used to produce a light-emitting device exhibiting a low operation voltage and a sufficiently high reverse voltage.The inventive method for producing a p-type Group III nitride semiconductor comprises, during lowering temperature after completion of growth of a Group III nitride semiconductor containing a p-type dopant, immediately after completion of the growth, starting, at a temperature at which the growth has been completed, supply of a carrier gas composed of an inert gas and reduction of the flow rate of a nitrogen source; and stopping supply of the nitrogen source at a time in the course of lowering the temperature.
摘要翻译：本发明的目的是提供一种可用于制造出具有低工作电压和足够高的反向电压的发光器件的p型III族氮化物半导体的制造方法。本发明的p型III族氮化物半导体的制造方法包括在生长完成后立即生长含有p型掺杂剂的III族氮化物半导体生长完成后的降低温度期间，在生长已经完成，供应由惰性气体组成的载气并降低氮源的流量; 并且在降低温度的过程中停止氮源的供给。

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