专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100167545A1 Method and Composition for Chemical Mechanical Planarization of A Metal 有权
标题翻译：金属化学机械平面化方法与组成
公开(公告)号：US20100167545A1
公开(公告)日：2010-07-01
申请号：US12632111
申请日：2009-12-07
申请人： Xiaobo Shi , Bentley J. Palmer , Rebecca A. Sawayda , Fadi Abdallah Coder , Victoria Perez
发明人： Xiaobo Shi , Bentley J. Palmer , Rebecca A. Sawayda , Fadi Abdallah Coder , Victoria Perez
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.
摘要翻译：本文描述了一种用于含金属衬底（例如，铜衬底）的化学机械平坦化的组合物和相关方法，其提供高的和可调谐的金属去除速率，以及在晶片内的非均匀性值和低残留量水平抛光后。

2. 发明申请

US20100081279A1 Method for Forming Through-base Wafer Vias in Fabrication of Stacked Devices 审中-公开
标题翻译：在堆叠设备制造中形成通孔晶圆通孔的方法
公开(公告)号：US20100081279A1
公开(公告)日：2010-04-01
申请号：US12242002
申请日：2008-09-30
申请人： Bentley J. Palmer , Rebecca A. Sawayda
发明人： Bentley J. Palmer , Rebecca A. Sawayda
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , C09G1/02 , H01L21/30625 , H01L21/3212
摘要： An effective method for forming through-base wafer vias in the fabrication of stacked devices is described. The base wafer can be a silicon wafer in which case the method relates to TSV (through-silicon via) technology. The method affords high removal rates of both silicon and metal (e.g., copper) under appropriate conditions and is tuneable with respect to base wafer material to metal selectivity.
摘要翻译：描述了在堆叠装置的制造中形成贯穿基底晶片通孔的有效方法。基底晶片可以是硅晶片，在这种情况下，该方法涉及TSV（穿硅通孔）技术。该方法在合适的条件下提供了硅和金属（例如铜）的高去除率，并且相对于基底晶片材料可调谐至金属选择性。

3. 发明授权

US07524346B2 Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates 有权
标题翻译：化学机械平面化浆料的组合物接触贵金属特征的基材
公开(公告)号：US07524346B2
公开(公告)日：2009-04-28
申请号：US10057206
申请日：2002-01-25
申请人： Robert J. Small , Zhefei J. Chen
发明人： Robert J. Small , Zhefei J. Chen
IPC分类号： C09G1/00 , C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/00 , H01L28/60
摘要： A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4. A method for planarizing a substrate surface having a feature thereon comprising at least one noble metal, noble metal alloy, or noble metal oxide, or a combination thereof, comprises providing a composition or slurry comprising periodic acid and an abrasive in a combined amount sufficient to planarize the substrate surface, and polishing the surface with the slurry. A substrate produced by such a method is also provided.
摘要翻译：用于化学机械平面化的组合物包括高碘酸和研磨剂，其组合量足以使其上具有特征的基材表面平坦化，其中包含贵金属，贵金属合金，贵金属氧化物或其任何组合。在一个实施方案中，高碘酸的存在量为约0.05至约0.3摩尔/千克，磨料的存在量为约0.2至约6重量％。在另一个实施方案中，组合物还包含pH调节剂，其量足以使组合物的pH在约pH 5至约pH 10或约pH 1至约pH 4的范围内包括至少一种贵金属，贵金属合金或贵金属氧化物或其组合的其上具有其特征的基材表面的平面化方法包括提供组合物或浆料，所述组合物或浆料包含合成量足够的高碘酸和磨料平坦化基板表面，并用浆料抛光表面。还提供了通过这种方法制造的基板。

4. 发明授权

US07514363B2 Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use 有权
标题翻译：具有苯磺酸和全复合氧化剂的化学机械平面化组合物及其相关使用方法
公开(公告)号：US07514363B2
公开(公告)日：2009-04-07
申请号：US11212628
申请日：2005-08-29
申请人： Gautam Banerjee , Timothy Frederick Compton , Junaid Ahmed Siddiqui , Ajoy Zutshi
发明人： Gautam Banerjee , Timothy Frederick Compton , Junaid Ahmed Siddiqui , Ajoy Zutshi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C09G1/02 , C11D3/3947 , C11D7/20 , C11D7/34 , C11D11/0047 , H01L21/02074 , H01L21/31053 , H01L21/3212 , H01L21/32125
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
摘要翻译：描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。该组合物含有磨料，苯磺酸化合物，每一化合物氧化剂和水。该组合物在金属CMP工艺中提供金属，阻挡层材料和介电层材料的去除速率的可调性。该组合物特别适用于金属CMP应用的相关方法（例如，步骤2铜CMP工艺）。

5. 发明申请

US20090057834A1 Method for Chemical Mechanical Planarization of Chalcogenide Materials 失效
标题翻译：硫族化物材料化学机械平面化方法
公开(公告)号：US20090057834A1
公开(公告)日：2009-03-05
申请号：US12190882
申请日：2008-08-13
申请人： James Allen Schlueter , Bentley J. Palmer
发明人： James Allen Schlueter , Bentley J. Palmer
IPC分类号： H01L29/24 , H01L21/306
CPC分类号： C09G1/02
摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.
摘要翻译：描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。组合物和方法在CMP处理期间在含硫属化物的衬底上提供低缺陷水平以及低的凹陷和局部侵蚀水平。

6. 发明申请

US20090029553A1 Free radical-forming activator attached to solid and used to enhance CMP formulations 审中-公开
标题翻译：自由基形成活化剂连接到固体上并用于增强CMP配方
公开(公告)号：US20090029553A1
公开(公告)日：2009-01-29
申请号：US12232712
申请日：2008-09-23
申请人： Brandon Shane Scott , Robert J. Small
发明人： Brandon Shane Scott , Robert J. Small
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： H01L21/3212 , B24B37/044 , C03C19/00 , C09G1/02 , C09K3/1436 , C09K3/1445 , C09K3/1463 , C23F3/00 , C23F3/04 , G11B5/3163 , G11B5/3169 , Y02P20/582
摘要： The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.
摘要翻译：本发明提供了一种用于化学机械抛光的组合物，其包括至少一种具有至少部分地被活化剂涂覆的表面的磨料颗粒。活化剂包括不同于第4组（b），第5组（b）或第6组（b）组的金属的金属。组合物还包含至少一种氧化剂。认为组合物由于在活化剂表面上涂覆在磨料颗粒表面上的活化剂与氧化剂之间的相互作用而有效，以形成自由基。本发明进一步提供了一种在基底表面上抛光特征或层如金属膜的组合物的方法。本发明另外提供了制造这种方法的基材。

7. 发明授权

US07022255B2 Chemical-mechanical planarization composition with nitrogen containing polymer and method for use 有权
标题翻译：含氮聚合物的化学机械平面化组合物及其使用方法
公开(公告)号：US07022255B2
公开(公告)日：2006-04-04
申请号：US10683258
申请日：2003-10-10
申请人： Junaid Ahmed Siddiqui , Bin Hu
发明人： Junaid Ahmed Siddiqui , Bin Hu
IPC分类号： C09K13/00 , C09K13/04
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an organometallic-modified colloidal abrasive and a nitrogen-containing polymer compound (e.g., a polyalkyleneimine, such as polyamidopolyethyleneimine). The composition possesses both high stability towards gelling and/or solids formation and high selectivity for metal removal in metal CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).
摘要翻译：描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。该组合物包含有机金属改性的胶体磨料和含氮高分子化合物（例如，聚亚烷基亚胺，如聚酰胺聚乙烯亚胺）。该组合物具有对胶凝和/或固体形成的高稳定性以及金属CMP中金属去除的高选择性。组合物还可以包含氧化剂，在这种情况下，组合物特别适用于金属CMP应用的相关方法（例如，铜CMP）。

8. 发明授权

US07014669B2 Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same 有权
公开(公告)号：US07014669B2
公开(公告)日：2006-03-21
申请号：US10619708
申请日：2003-07-14
申请人： Robert J. Small , Brandon S. Scott
发明人： Robert J. Small , Brandon S. Scott
IPC分类号： C09G1/02 , C09G1/04 , B24B1/00
CPC分类号： H01L21/3212 , B24B37/044 , C03C19/00 , C09G1/02 , C09K3/1436 , C09K3/1445 , C09K3/1463 , C23F3/00 , C23F3/04 , G11B5/3163 , G11B5/3169 , Y02P20/582
摘要： The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a catalyst. The catalyst comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the catalyst coated on the surface of the abrasive particles and the oxidizing agent, at the catalyst surface. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.

9. 发明申请

US20120028466A1 Method for Chemical Mechanical Planarization of a Tungsten-Containing Substrate 有权
标题翻译：含钨基材的化学机械平面化方法
公开(公告)号：US20120028466A1
公开(公告)日：2012-02-02
申请号：US13014009
申请日：2011-01-26
申请人： Rachel Dianne McConnell , Ann Marie Hurst , Xiaobo Shi
发明人： Rachel Dianne McConnell , Ann Marie Hurst , Xiaobo Shi
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02
摘要： The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound.
摘要翻译：标题方法在抛光的基材中提供低的凹陷度，同时提供高的金属去除速率。该方法利用相关的抛光组合物。组合物中的组分包括聚（亚烷基亚胺）如聚乙烯亚胺，研磨剂，酸和氧化剂，例如每一化合物。

10. 发明授权

US07915071B2 Method for chemical mechanical planarization of chalcogenide materials 有权
标题翻译：硫族化物材料的化学机械平面化方法
公开(公告)号：US07915071B2
公开(公告)日：2011-03-29
申请号：US12193303
申请日：2008-08-18
申请人： Junaid Ahmed Siddiqui , Saifi Usmani
发明人： Junaid Ahmed Siddiqui , Saifi Usmani
IPC分类号： H01L21/00
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.
摘要翻译：描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。组合物和方法在CMP处理期间提供低缺陷水平（例如抛光期间产生的划痕）以及含硫属化物的衬底的低凹陷和局部侵蚀水平。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式