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1. 发明授权

US07915071B2 Method for chemical mechanical planarization of chalcogenide materials 有权
标题翻译：硫族化物材料的化学机械平面化方法
公开(公告)号：US07915071B2
公开(公告)日：2011-03-29
申请号：US12193303
申请日：2008-08-18
申请人： Junaid Ahmed Siddiqui , Saifi Usmani
发明人： Junaid Ahmed Siddiqui , Saifi Usmani
IPC分类号： H01L21/00
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.
摘要翻译：描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。组合物和方法在CMP处理期间提供低缺陷水平（例如抛光期间产生的划痕）以及含硫属化物的衬底的低凹陷和局部侵蚀水平。

2. 发明申请

US20090057661A1 Method for Chemical Mechanical Planarization of Chalcogenide Materials 有权
标题翻译：硫族化物材料化学机械平面化方法
公开(公告)号：US20090057661A1
公开(公告)日：2009-03-05
申请号：US12193303
申请日：2008-08-18
申请人： Junaid Ahmed Siddiqui , Saifi Usmani
发明人： Junaid Ahmed Siddiqui , Saifi Usmani
IPC分类号： H01L21/306 , H01L29/12
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.
摘要翻译：描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。组合物和方法在CMP处理期间提供低缺陷水平（例如抛光期间产生的划痕）以及含硫属化物的衬底的低凹陷和局部侵蚀水平。

3. 发明申请

US20080149884A1 Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing 审中-公开
标题翻译：在化学机械抛光过程中调节低k对铜去除率的方法和浆料
公开(公告)号：US20080149884A1
公开(公告)日：2008-06-26
申请号：US11643519
申请日：2006-12-21
申请人： Junaid Ahmed Siddiqui , Rachel Dianne McConnell , Saifi Usmani
发明人： Junaid Ahmed Siddiqui , Rachel Dianne McConnell , Saifi Usmani
IPC分类号： C09K13/00 , B24B1/00 , H01L21/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.
摘要翻译：描述了用于半导体晶片上的金属衬底的化学机械平坦化（CMP）的组合物和相关方法。该组合物含有非离子型氟碳表面活性剂和每种类型的氧化剂（例如过氧化氢）。该组合物和相关方法在控制铜CMP期间低k膜的去除速率方面是有效的，并且提供了关于铜，钽和氧化物膜去除率的低k膜去除率的调谐能力。

4. 发明申请

US20080148652A1 Compositions for chemical mechanical planarization of copper 审中-公开
标题翻译：铜化学机械平面化的组成
公开(公告)号：US20080148652A1
公开(公告)日：2008-06-26
申请号：US11643309
申请日：2006-12-21
申请人： Junaid Ahmed Siddiqui , Rachel Dianne McConnell , Saifi Usmani
发明人： Junaid Ahmed Siddiqui , Rachel Dianne McConnell , Saifi Usmani
IPC分类号： B24B1/00 , C09C1/68
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A composition and associated method for chemical mechanical planarization of a copper-containing substrate are described and which afford low defectivity levels on copper during copper CMP processing. The composition comprises a colloidal silica that is substantially free of soluble polymeric silicates.
摘要翻译：描述了一种用于含铜衬底的化学机械平面化的组合物和相关方法，并且在铜CMP处理期间在铜上提供低的缺陷水平。该组合物包含基本上不含可溶性聚合物硅酸盐的胶体二氧化硅。

5. 发明申请

US20110165777A1 Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing 审中-公开
标题翻译：化学机械抛光过程中调低低K对铜去除率的方法和浆料
公开(公告)号：US20110165777A1
公开(公告)日：2011-07-07
申请号：US13052457
申请日：2011-03-21
申请人： Junaid Ahmed Siddiqui , Rachel Dianne McConnell , Saifi Usmani
发明人： Junaid Ahmed Siddiqui , Rachel Dianne McConnell , Saifi Usmani
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.
摘要翻译：描述了用于半导体晶片上的金属衬底的化学机械平坦化（CMP）的组合物和相关方法。该组合物含有非离子型氟碳表面活性剂和每种类型的氧化剂（例如过氧化氢）。该组合物和相关方法在控制铜CMP期间低k膜的去除速率方面是有效的，并且提供了关于铜，钽和氧化物膜去除率的低k膜去除率的调谐能力。

6. 发明申请

US20050194563A1 Bicine/tricine containing composition and method for chemical-mechanical planarization 审中-公开
标题翻译：含有二元/三氯化锰的组合物和化学机械平面化方法
公开(公告)号：US20050194563A1
公开(公告)日：2005-09-08
申请号：US11032593
申请日：2005-01-10
申请人： Junaid Siddiqui , Timothy Compton , Bin Hu , Robin Richards , Saifi Usmani
发明人： Junaid Siddiqui , Timothy Compton , Bin Hu , Robin Richards , Saifi Usmani
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/321 , C09K13/00 , B44C1/22 , C23F1/00 , H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivities for removal of copper in relation to tantalum and dielectric materials whilst minimizing local dishing and erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).
摘要翻译：描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。组合物包含研磨剂和三羟甲基型或二亚胺型化合物。该组合物具有相对于钽和介电材料去除铜的高选择性，同时最小化CMP中的局部凹陷和侵蚀效应。组合物还可以包含氧化剂，在这种情况下，组合物特别适用于金属CMP应用的相关方法（例如，铜CMP）。

7. 发明授权

US07188630B2 Method to passivate conductive surfaces during semiconductor processing 失效
标题翻译：在半导体加工过程中钝化导电表面的方法
公开(公告)号：US07188630B2
公开(公告)日：2007-03-13
申请号：US10431053
申请日：2003-05-07
申请人： John C. Flake , Kevin E. Cooper , Saifi Usmani
发明人： John C. Flake , Kevin E. Cooper , Saifi Usmani
IPC分类号： B08B6/00 , C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： C11D3/28 , C11D1/146 , C11D1/345 , C11D1/62 , C11D1/72 , C11D3/0073 , C11D3/2003 , C11D3/382 , C11D3/43 , C11D11/0047 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.
摘要翻译：公开了一种处理半导体晶片的方法。将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。该解决方案可以在CMP过程中或CMP后清洗过程中应用。溶液可以包括表面活性剂和腐蚀抑制剂。在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。溶液还可以包括溶剂和助溶剂。在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。

8. 发明授权

US07579279B2 Method to passivate conductive surfaces during semiconductor processing 有权
标题翻译：在半导体加工过程中钝化导电表面的方法
公开(公告)号：US07579279B2
公开(公告)日：2009-08-25
申请号：US11670176
申请日：2007-02-01
申请人： John C. Flake , Kevin E. Cooper , Saifi Usmani
发明人： John C. Flake , Kevin E. Cooper , Saifi Usmani
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C11D3/28 , C11D1/146 , C11D1/345 , C11D1/62 , C11D1/72 , C11D3/0073 , C11D3/2003 , C11D3/382 , C11D3/43 , C11D11/0047 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.
摘要翻译：公开了一种处理半导体晶片的方法。将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。该解决方案可以在CMP过程中或CMP后清洗过程中应用。溶液可以包括表面活性剂和腐蚀抑制剂。在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。溶液还可以包括溶剂和助溶剂。在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。

9. 发明申请

US20080038994A1 METHOD TO PASSIVATE CONDUCTIVE SURFACES DURING SEMICONDUCTOR PROCESSING 有权
标题翻译：在半导体加工过程中钝化导电表面的方法
公开(公告)号：US20080038994A1
公开(公告)日：2008-02-14
申请号：US11670176
申请日：2007-02-01
申请人： John Flake , Kevin Cooper , Saifi Usmani
发明人： John Flake , Kevin Cooper , Saifi Usmani
IPC分类号： B24B7/04 , B24B29/00 , C09K13/00
CPC分类号： C11D3/28 , C11D1/146 , C11D1/345 , C11D1/62 , C11D1/72 , C11D3/0073 , C11D3/2003 , C11D3/382 , C11D3/43 , C11D11/0047 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.
摘要翻译：公开了一种处理半导体晶片的方法。将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。该解决方案可以在CMP过程中或CMP后清洗过程中应用。溶液可以包括表面活性剂和腐蚀抑制剂。在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。溶液还可以包括溶剂和助溶剂。在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。

10. 发明申请

US20050076579A1 Bicine/tricine containing composition and method for chemical-mechanical planarization 审中-公开
公开(公告)号：US20050076579A1
公开(公告)日：2005-04-14
申请号：US10683233
申请日：2003-10-10
申请人： Junaid Siddiqui , Timothy Compton , Bin Hu , Robin Richards , Saifi Usmani
发明人： Junaid Siddiqui , Timothy Compton , Bin Hu , Robin Richards , Saifi Usmani
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/321 , B24D3/02 , H01L21/302 , H01L21/461
CPC分类号： C09G1/02 , H01L21/3212
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivities for removal of copper in relation to tantalum and dielectric materials whilst minimizing local dishing and erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

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