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1. 发明申请

US20130126418A1 LIQUID FILTRATION MEDIA 审中-公开
标题翻译：液体过滤介质
公开(公告)号：US20130126418A1
公开(公告)日：2013-05-23
申请号：US13469431
申请日：2012-05-11
申请人： Hyun Sung Lim , Robert Anthony Marin , Patrick Henry Young , Guanghui Chen , Timothy Frederick Compton , Simon Frisk
发明人： Hyun Sung Lim , Robert Anthony Marin , Patrick Henry Young , Guanghui Chen , Timothy Frederick Compton , Simon Frisk
IPC分类号： B01D29/11
CPC分类号： B01D29/11 , B01D39/1623 , B01D2239/10
摘要： The present invention relates to a liquid filtration medium comprising at least one nonwoven sheet wherein the nonwoven sheet has a water flow rate of at least 10 ml/min/cm2/KPa and a tortuosity filter factor of at least 3.0. The liquid filtration medium can be used in a filter system with an optional pre-filter layer or microfiltration membrane.
摘要翻译：液体过滤介质技术领域本发明涉及一种液体过滤介质，其包括至少一个非织造片材，其中非织造片材具有至少10ml / min / cm 2 / KPa的水流速率和至少3.0的曲折过滤因子。液体过滤介质可用于具有可选的预过滤层或微滤膜的过滤系统中。

2. 发明申请

US20100200519A1 FILTERS FOR SELECTIVE REMOVAL OF LARGE PARTICLES FROM PARTICLE SLURRIES 审中-公开
标题翻译：从颗粒物中选择性去除大颗粒的过滤器
公开(公告)号：US20100200519A1
公开(公告)日：2010-08-12
申请号：US12633825
申请日：2009-12-09
申请人： YOGESHWAR K. VELU , Timothy Frederick Compton
发明人： YOGESHWAR K. VELU , Timothy Frederick Compton
IPC分类号： B01D37/00 , B01D29/46
CPC分类号： B01D39/1623 , B01D2239/025
摘要： A method for removing the high particle size tail of the particle size distribution of a slurry while leaving desirable smaller particles in the slurry. The method involves providing a filter media having a first and second side and being formed of at least one sheet of a fabric that has at least one layer comprising polymeric fibers having a mean number average fiber diameter of less than 1000 nm. A slurry stream is then supplied to one face of the fabric. The stream has a multiplicity of particle sizes comprising a first set of particles of maximum dimension less than 0.1 microns and a second set of particles of maximum individual dimension of greater than 0.45 microns to the first side of said filter media. The slurry stream is passed through said filter media to the second side thereof whereby at least a portion of the larger particles in the slurry are retained on the first side of said media. The filtration efficiency of the fabric towards the first set of particles is less than 0.05 and the filtration efficiency towards the second set of particles is greater than 0.8.
摘要翻译：一种用于除去浆料的粒度分布的高粒度尾部的方法，同时在浆料中留下期望的较小颗粒。该方法包括提供具有第一和第二侧面的过滤介质，并且由至少一层织物形成，该片材具有至少一层包含平均纤维直径小于1000nm的聚合物纤维。然后将浆料流供应到织物的一个面。流具有多个粒度，其包括最大尺寸小于0.1微米的第一组粒子和大于0.45微米的最大个体尺寸的第二组粒子至所述过滤介质的第一侧。浆料流通过所述过滤介质到其第二侧，其中浆料中的较大颗粒的至少一部分保留在所述介质的第一侧上。织物朝向第一组颗粒的过滤效率小于0.05，并且朝向第二组颗粒的过滤效率大于0.8。

3. 发明授权

US07691287B2 Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization 有权
标题翻译：将配体和有机金属化合物固定在二氧化硅表面上的方法及其在化学机械平面化中的应用
公开(公告)号：US07691287B2
公开(公告)日：2010-04-06
申请号：US11700526
申请日：2007-01-31
申请人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Robin Edward Richards
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , B24B37/044
摘要： A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.
摘要翻译：一种用包含氧化剂和具有表面的磨料颗粒的抛光组合物抛光基材的方法，所述磨料颗粒的所述表面至少部分地用1）至少一种包含铝，硼，钨或两者的稳定剂化合物进行改性，所述稳定剂化合物通过共价键与所述研磨颗粒结合，和2）有机螯合化合物，所述螯合化合物通过共价键与所述稳定剂化合物结合。有机螯合化合物包括1）含氮部分和1至5个其它极性基团中的一种或多种; 2）含硫部分和1至5个其它极性基团; 和3）选自羧酸基团或其盐和羟基的两个和五个极性基团之间。

4. 发明授权

US07316977B2 Chemical-mechanical planarization composition having ketooxime compounds and associated method for use 失效
标题翻译：具有酮肟化合物的化学机械平面化组合物及其相关使用方法
公开(公告)号：US07316977B2
公开(公告)日：2008-01-08
申请号：US11508427
申请日：2006-08-23
申请人： Junaid Ahmed Siddiqui , Timothy Frederick Compton
发明人： Junaid Ahmed Siddiqui , Timothy Frederick Compton
IPC分类号： H01L21/302 , H01L21/461 , C11D7/32 , C09K13/00
CPC分类号： H01L21/7684 , C09G1/02 , H01L21/3212
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketoxime compound and water. The composition may also contain an abrasive and/or a per compound oxidizing agent. The composition affords tunability of removal rates for metal, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
摘要翻译：描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。该组合物含有酮肟化合物和水。组合物还可以含有磨料和/或每一种化合物氧化剂。该组合物提供金属CMP中金属，阻挡材料和介电层材料的去除速率的可调性。该组合物特别适用于金属CMP应用的相关方法（例如，步骤2铜CMP工艺）。

5. 发明授权

US07247179B2 Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal 有权
标题翻译：用于金属去除的高选择性的化学机械平面化的组成和相关方法
公开(公告)号：US07247179B2
公开(公告)日：2007-07-24
申请号：US10914113
申请日：2004-08-09
申请人： Junaid Ahmed Siddiqui , Timothy Frederick Compton
发明人： Junaid Ahmed Siddiqui , Timothy Frederick Compton
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , C09K3/1409 , C09K3/1463 , Y10T428/259
摘要： A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).
摘要翻译：描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。组合物可以包含研磨剂和分散的杂化有机/无机颗粒。组合物还可以包含炔化合物。公开了用于化学机械平面化的两种不同的方法。在一种方法（方法A）中，该方法中使用的CMP浆料组合物包括研磨剂和分散的杂化有机/无机颗粒。在另一种方法（方法B）中，该方法中使用的CMP浆料组合物包括研磨剂和炔化合物。组合物还可以包含氧化剂，在这种情况下，组合物特别适用于金属CMP应用（例如，钨CMP）的相关方法（A和B）。

6. 发明授权

US09200180B2 Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use 有权
公开(公告)号：US09200180B2
公开(公告)日：2015-12-01
申请号：US12419619
申请日：2009-04-07
申请人： Gautam Banerjee , Timothy Frederick Compton , Junaid Ahmed Siddiqui , Ajoy Zutshi
发明人： Gautam Banerjee , Timothy Frederick Compton , Junaid Ahmed Siddiqui , Ajoy Zutshi
IPC分类号： C09K13/00 , C09G1/02 , C11D7/34 , C11D11/00 , H01L21/02 , H01L21/321
CPC分类号： C09G1/02 , C11D3/3947 , C11D7/20 , C11D7/34 , C11D11/0047 , H01L21/02074 , H01L21/31053 , H01L21/3212 , H01L21/32125
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

7. 发明申请

US20090261291A1 Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid and Per-Compound Oxidizing Agents, and Associated Method for Use 有权
标题翻译：具有苯磺酸和全复合氧化剂的化学机械平面化组合物及其相关方法
公开(公告)号：US20090261291A1
公开(公告)日：2009-10-22
申请号：US12419619
申请日：2009-04-07
申请人： Gautam Banerjee , Timothy Frederick Compton , Junaid Ahmed Siddiqui , Ajoy Zutshi
发明人： Gautam Banerjee , Timothy Frederick Compton , Junaid Ahmed Siddiqui , Ajoy Zutshi
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C11D3/3947 , C11D7/20 , C11D7/34 , C11D11/0047 , H01L21/02074 , H01L21/31053 , H01L21/3212 , H01L21/32125
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
摘要翻译：描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。该组合物含有磨料，苯磺酸化合物，每一化合物氧化剂和水。该组合物在金属CMP工艺中提供金属，阻挡层材料和介电层材料的去除速率的可调性。该组合物特别适用于金属CMP应用的相关方法（例如，步骤2铜CMP工艺）。

8. 发明授权

US06893476B2 Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal 失效
公开(公告)号：US06893476B2
公开(公告)日：2005-05-17
申请号：US10315398
申请日：2002-12-09
申请人： Junaid Ahmed Siddiqui , Timothy Frederick Compton
发明人： Junaid Ahmed Siddiqui , Timothy Frederick Compton
IPC分类号： B24B1/00 , B24D3/00 , B24D3/02 , C09C1/68 , C09G1/02 , C09G1/04 , C09K3/14 , H01L21/321
CPC分类号： H01L21/3212 , C09K3/1409 , C09K3/1463 , Y10T428/259
摘要： A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

9. 发明授权

US07351662B2 Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization 失效
标题翻译：在化学机械平面化期间催化介电膜去除速率的组成和相关方法
公开(公告)号：US07351662B2
公开(公告)日：2008-04-01
申请号：US11233110
申请日：2005-09-22
申请人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo, II , Robin Edward Richards , Timothy Frederick Compton
发明人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo, II , Robin Edward Richards , Timothy Frederick Compton
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , B24B37/044 , C09G1/02 , C09K3/1463
摘要： A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.
摘要翻译：描述了一种用于抛光（例如化学机械平面化）的含固体含量低的浆料，其包含电介质和使用该浆料的相关方法。浆料和相关方法在抛光过程中提供高电介质的去除速率，即使浆料具有低的固体含量。该浆料包括碳酸氢盐，其作为用于在抛光这些基材期间提高介电膜的去除速率的催化剂。

10. 发明授权

US07153335B2 Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole 有权
标题翻译：天门冬氨酸/甲苯基三唑化学机械平面化的可调组合物和方法
公开(公告)号：US07153335B2
公开(公告)日：2006-12-26
申请号：US10683232
申请日：2003-10-10
申请人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Bin Hu , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Timothy Frederick Compton , Bin Hu , Robin Edward Richards
IPC分类号： C09G1/02 , C09G1/04 , C09K13/14 , B24B1/00
CPC分类号： C09G1/02
摘要： A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.
摘要翻译：描述了用于化学机械平面化（或其他抛光）的组合物和相关方法，其在铜CMP中提供高的钽到铜选择性，并且其可调谐（相对于抛光性能）。该组合物包含磨料和N-酰基-N-烃氧烷基天冬氨酸化合物和/或甲苯基三唑衍生物。

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