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1. 发明申请

US20060266653A1 In-situ profile measurement in an electroplating process 失效
标题翻译：电镀工艺中的原位型材测量
公开(公告)号：US20060266653A1
公开(公告)日：2006-11-30
申请号：US11137711
申请日：2005-05-25
申请人： Manoocher Birang , Nicolay Kovarsky , Bernardo Donoso
发明人： Manoocher Birang , Nicolay Kovarsky , Bernardo Donoso
IPC分类号： C25D21/12
CPC分类号： G01B7/06 , C25D7/123 , C25D17/001 , C25D21/12 , G01B7/287 , H01L21/67253 , Y10T428/24802
摘要： A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.
摘要翻译：一种用于测量电化学电镀单元的电解质中的差分电压的方法和装置。电流密度根据测得的差分电压计算，并与电镀材料的厚度值相关。可以从厚度值产生实时厚度分布。

2. 发明申请

US20070068819A1 Electroplating apparatus based on an array of anodes 失效
标题翻译：基于阳极阵列的电镀设备
公开(公告)号：US20070068819A1
公开(公告)日：2007-03-29
申请号：US11435213
申请日：2006-05-16
申请人： Saravjeet Singh , Manoocher Birang , Nicolay Kovarsky , Aron Rosenfeld
发明人： Saravjeet Singh , Manoocher Birang , Nicolay Kovarsky , Aron Rosenfeld
IPC分类号： C25D17/00
CPC分类号： C25D17/12 , C25D17/10 , H01L21/2885 , Y10S204/07
摘要： The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows.
摘要翻译：本发明一般涉及在基片上镀敷导电材料的装置和方法。本发明的一个实施例提供一种用于在基板上镀覆导电材料的装置。该装置包括被配置为保持电解质的流体池，被配置为支撑基板并且电连接基板的接触环以及设置在流体槽中的阳极组件，其中阳极组件包括排成行的多个阳极元件。

3. 发明申请

US20110129616A1 OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS 有权
标题翻译：用于非碳离子组分CVD膜的氧气掺杂
公开(公告)号：US20110129616A1
公开(公告)日：2011-06-02
申请号：US12836991
申请日：2010-07-15
申请人： Nitin Ingle , Abhijit Basu Mallick , Earl Osman Solis , Nicolay Kovarsky , Olga Lyubimova
发明人： Nitin Ingle , Abhijit Basu Mallick , Earl Osman Solis , Nicolay Kovarsky , Olga Lyubimova
IPC分类号： H05H1/24
CPC分类号： C23C16/308 , C23C16/402 , C23C16/452 , C23C16/45565 , C23C16/56 , H01J37/32082 , H01J37/32357 , H01J37/32449
摘要： Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。自由基前体和含硅前体之一含有氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

4. 发明申请

US20070175752A1 ANOLYTE FOR COPPER PLATING 失效
标题翻译：铜镀层
公开(公告)号：US20070175752A1
公开(公告)日：2007-08-02
申请号：US11539477
申请日：2006-10-06
申请人： Michael Yang , Nicolay Kovarsky
发明人： Michael Yang , Nicolay Kovarsky
IPC分类号： C25B13/04
CPC分类号： C25D17/002 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , C07F9/103 , C25D7/123 , C25D17/001 , C25D21/22 , H01L21/2885 , H01L21/76877
摘要： Embodiments of the invention provide a method for plating copper into features formed on a semiconductor substrate. The method includes positioning the substrate in a plating cell, wherein the plating cell includes a catholyte volume containing a catholyte solution, an anolyte volume containing an anolyte solution, an ionic membrane positioned to separate the anolyte volume from the catholyte volume, and an anode positioned in the anolyte volume. The method further includes applying a plating bias between the anode and the substrate, plating copper ions onto the substrate from the catholyte solution, and replenishing the copper ions plated onto the substrate from the catholyte solution with copper ions transported from the anolyte solution via the ionic membrane, wherein the catholyte solution has a copper concentration of greater than about 51 g/L.
摘要翻译：本发明的实施例提供了一种将铜电镀到形成在半导体衬底上的特征的方法。该方法包括将基板定位在电镀槽中，其中镀覆电池包括含有阴极电解液的阴极电解液体积，含有阳极电解液的阳极电解液体，将阳极电解液体积与阴极电解液容积分离的离子膜，在阳极电解液中。该方法还包括在阳极和衬底之间施加电镀偏压，从阴极电解液将铜离子镀覆到衬底上，并从阴极电解液中补充镀在衬底上的铜离子，铜离子从阳极电解液通过离子膜，其中阴极电解液的铜浓度大于约51g / L。

5. 发明授权

US07247222B2 Electrochemical processing cell 失效
标题翻译：电化学处理池
公开(公告)号：US07247222B2
公开(公告)日：2007-07-24
申请号：US10268284
申请日：2002-10-09
申请人： Michael X. Yang , Dmitry Lubomirsky , Yezdi Dordi , Saravjeet Singh , Sheshraj Tulshibagwale , Nicolay Kovarsky
发明人： Michael X. Yang , Dmitry Lubomirsky , Yezdi Dordi , Saravjeet Singh , Sheshraj Tulshibagwale , Nicolay Kovarsky
IPC分类号： C25B9/00 , C25C7/04 , C25B9/08
CPC分类号： H01L21/2885 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , C07F9/103 , C25D7/123 , C25D17/001
摘要： Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.
摘要翻译：本发明的实施方案通常可以提供小体积的电化学电镀单元。电镀槽通常包括配置成在其中容纳电镀液的流体池，流体池具有基本上水平的堰。电池还包括位于流体槽的下部的阳极，阳极具有穿过其形成的多个平行通道，以及构造成容纳阳极的基座构件，底座构件具有形成为阳极接收的多个槽多个槽中的每一个终止于环形排水通道。提供了一种膜支撑组件，其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上，所述膜支撑组件具有形成在其中的多个通道和孔。

6. 发明授权

US06878258B2 Apparatus and method for removing contaminants from semiconductor copper electroplating baths 失效
标题翻译：从半导体铜电镀浴中去除污染物的设备和方法
公开(公告)号：US06878258B2
公开(公告)日：2005-04-12
申请号：US10074569
申请日：2002-02-11
申请人： Nicolay Kovarsky
发明人： Nicolay Kovarsky
IPC分类号： B01D61/44 , B01D61/52 , C25D21/18
CPC分类号： C25D21/18 , B01D61/44 , B01D61/52 , Y10S204/13
摘要： The present invention generally provides an apparatus and method for removing contaminants from a plating solution. The apparatus generally includes a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and an electrodialysis chamber in fluid communication with the electrolyte drain, wherein the electrodialysis chamber is generally configured to receive a portion of used electrolyte solution and remove contaminants therefrom. The method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with an electrodialysis cell.
摘要翻译：本发明通常提供一种从电镀液中除去污染物的装置和方法。该设备通常包括具有电解质入口和电解液排泄物的电镀池，与电解质入口流体连通的电解质储存单元以及与电解液排出流体连通的电渗析室，其中电渗析室通常构造成接收使用的电解质溶液的一部分并从其中除去污染物。该方法通常包括向镀铜电池提供电解质溶液，用电解液将铜镀在电镀液中的基底上，从电镀槽中除去使用的电解质溶液，并用电渗析池刷新一部分使用的电解液。

7. 发明申请

US20060108228A1 Method of stabilizing additive concentrations in an electroplating bath for interconnect formation 审中-公开
标题翻译：在电镀槽中稳定添加剂浓度以进行互连形成的方法
公开(公告)号：US20060108228A1
公开(公告)日：2006-05-25
申请号：US11282797
申请日：2005-11-17
申请人： Nicolay Kovarsky , Chunman Yu , Yezdi Dordi
发明人： Nicolay Kovarsky , Chunman Yu , Yezdi Dordi
IPC分类号： C25D21/06
CPC分类号： C25D21/14 , C25D21/18
摘要： Embodiments of the invention may further provide an electrochemical plating cell. The cell includes a fluid basin configured to contain an electrolyte plating solution, a fluid tank in fluid communication with the fluid basin and being configured to supply the electrolyte plating solution thereto, and an electrolyte solution stabilization device in fluid communication with the fluid tank. The stabilization device includes a fluid container having a fluid inlet and a fluid outlet, and an absorbent material positioned in the fluid container in a fluid path between the fluid inlet and the fluid outlet, wherein the absorbent material is configured to leach a solution additive into the electrolyte plating solution to maintain the solution additive within a processing window during an electrochemical plating process.
摘要翻译：本发明的实施例还可以提供一种电化学电镀单元。电池包括流体池，其构造成容纳电解液电镀溶液，与流体池流体连通的流体槽，并且被配置为向其提供电解镀液，以及与流体槽流体连通的电解液稳定装置。稳定装置包括具有流体入口和流体出口的流体容器和位于流体容器内的流体入口和流体出口之间的流体路径中的吸收材料，其中吸收材料构造成将溶液添加剂浸出在电化学电镀工艺期间将电解液电镀液维持在处理窗口内的溶液添加剂。

8. 发明申请

US20050274620A1 Copper replenishment system for interconnect applications 审中-公开
标题翻译：用于互连应用的铜补充系统
公开(公告)号：US20050274620A1
公开(公告)日：2005-12-15
申请号：US11006051
申请日：2004-12-06
申请人： Nicolay Kovarsky , John Dukovic
发明人： Nicolay Kovarsky , John Dukovic
IPC分类号： C25D3/38 , C25D3/58 , C25D17/00 , C25D21/12 , C25D21/18
CPC分类号： C25D21/18 , C25D3/38 , C25D21/12
摘要： In one example, an apparatus for dispensing copper into a plating solution is provided which includes a cartridge containing an inlet and an outlet and comprising a copper metal source therein, a dosing device containing an oxidizing agent in fluid communication with the inlet, a tank for containing the plating solution in fluid communication with the outlet, a pH electrode adapted to contact the plating solution, and a system controller which receives input from the pH electrode and sends output to the dosing device. In another example, a method for replenishing copper in a plating solution is provided which includes flowing the plating solution from a plating cell to a replenishing system comprising a dosing device and a cartridge, dosing an oxidizing agent from the dosing device to the plating solution, exposing the plating solution to a copper metal source contained in the cartridge, enriching the plating solution with copper ions derived from the copper metal source, and flowing the enriched plating solution to the plating cell.
摘要翻译：在一个示例中，提供了一种用于将铜分配到电镀液中的装置，其包括：包含入口和出口的盒，其中包括铜金属源，含有与入口流体连通的氧化剂的配量装置，包含与出口流体连通的电镀溶液，适于接触电镀溶液的pH电极，以及接收来自pH电极的输入并将输出发送到计量装置的系统控制器。在另一个实例中，提供了一种用于在电镀溶液中补充铜的方法，其包括将电镀液从电镀池流动到包括计量装置和药筒的补充系统，将计量装置的氧化剂计量给电镀溶液，将电镀溶液暴露于盒内所含的铜金属源，用铜金属源的铜离子对电镀溶液进行富集，并使富集的电镀液流到电镀槽。

9. 发明申请

US20050145499A1 Plating of a thin metal seed layer 审中-公开
标题翻译：电镀薄金属种子层
公开(公告)号：US20050145499A1
公开(公告)日：2005-07-07
申请号：US11072473
申请日：2005-03-03
申请人： Nicolay Kovarsky , You Wang , John Dukovic , Ivan Rodriguez
发明人： Nicolay Kovarsky , You Wang , John Dukovic , Ivan Rodriguez
IPC分类号： C25D5/18
CPC分类号： C25D17/10 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A method and apparatus for plating a metal layer onto a substrate is provided. The plating apparatus includes two or more segments of an anode and an auxiliary electrode. The plating method includes a first stage of plating a thin metal seed uniformly in the center of the substrate and near the edges of the substrate before metal gap filling and bulk metal plating are performed. The thin metal seed is plated on the substrate surface by applying a current pulse provided by a first power supply and a second power supply which are in electrical communication in reverse polarity with one segment of the anode and the auxiliary electrode. Thereafter, gap filling of features is performed by applying a second current pulse where current is provided to all segments of the anode.
摘要翻译：提供了一种用于将金属层电镀到基底上的方法和装置。电镀装置包括阳极和辅助电极的两个或更多个区段。电镀方法包括在执行金属间隙填充和块状金属电镀之前，在基板的中心和基板的边缘附近均匀地电镀薄金属种子的第一阶段。通过施加由与阳极和辅助电极的一个部分相反极性电连通的第一电源和第二电源提供的电流脉冲，将薄金属种子电镀在基板表面上。此后，通过施加第二电流脉冲来执行特征的间隙填充，其中电流被提供给阳极的所有段。

10. 发明申请

US20050056538A1 Insoluble anode with an auxiliary electrode 失效
标题翻译：具有辅助电极的不溶性阳极
公开(公告)号：US20050056538A1
公开(公告)日：2005-03-17
申请号：US10664277
申请日：2003-09-17
申请人： Nicolay Kovarsky , Dmitry Lubomirsky , Yevgeniy Rabinovich
发明人： Nicolay Kovarsky , Dmitry Lubomirsky , Yevgeniy Rabinovich
IPC分类号： B01D61/44 , B01D71/36 , C25D3/38 , C25D7/12 , C25D17/00 , C25D17/02 , C25D17/10 , C25D17/12 , C25D21/00 , C25D21/18 , C25B9/00
CPC分类号： C25D17/12 , B01D61/44 , B01D71/36 , C25D7/123 , C25D17/001 , C25D17/10 , C25D21/12
摘要： A method and apparatus for plating a metal onto a substrate. The apparatus includes a fluid basin configured to contain a plating solution, an anode fluid volume positioned in a lower portion of the fluid basin, a cathode fluid volume positioned in an upper portion of the fluid basin, an ionic membrane positioned to separate the anode fluid volume from the cathode fluid volume, a plating electrode centrally positioned in the anode fluid volume, and a deplating electrode positioned adjacent the plating electrode in the anode fluid volume.
摘要翻译：一种用于将金属电镀到基底上的方法和装置。该装置包括流体池，其构造成容纳镀液，位于流体槽的下部的阳极流体体积，位于流体池的上部的阴极流体体积，定位成将阳极流体分离的离子膜来自阴极流体体积的体积，位于阳极流体体积中心的电镀电极，以及位于阳极流体体积内的电镀电极附近的脱镀电极。

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