专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08365108B2 Generating cut mask for double-patterning process 失效
标题翻译：生成双图案工艺的切割面具
公开(公告)号：US08365108B2
公开(公告)日：2013-01-29
申请号：US12985643
申请日：2011-01-06
申请人： Zachary Baum , Henning Haffner , Scott M. Mansfield
发明人： Zachary Baum , Henning Haffner , Scott M. Mansfield
IPC分类号： G06F17/50 , G06F19/00 , G03F1/00 , G21K5/00 , G06K9/00
CPC分类号： G03F1/36 , G03F1/70
摘要： Aspects of the invention include a computer-implemented method of designing a photomask. In one embodiment, the method comprises: simulating a first photomask patterning process using a first photomask design to create simulated contours; comparing the simulated contours to a desired design; identifying regions not common to the simulated contours and the desired design; creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.
摘要翻译：本发明的方面包括设计光掩模的计算机实现的方法。在一个实施例中，该方法包括：使用第一光掩模设计来模拟第一光掩模图案化工艺以产生模拟轮廓; 将模拟轮廓与期望的设计进行比较; 识别不同于模拟轮廓和所需设计的区域; 在基于所识别的区域的第一光掩模图案化工艺之后，为第二光掩模图案化工艺创建期望的目标形状; 以及基于期望的目标形状提供用于形成第二光掩模设计的期望的目标形状。

2. 发明申请

US20090081563A1 Integrated Circuits and Methods of Design and Manufacture Thereof 有权
标题翻译：集成电路及其设计和制造方法
公开(公告)号：US20090081563A1
公开(公告)日：2009-03-26
申请号：US12126741
申请日：2008-05-23
申请人： Helen Wang , Scott D. Halle , Henning Haffner , Haoren Zhuang , Klaus Herold , Matthew E. Colburn , Allen H. Gabor , Zachary Baum , Scott M. Mansfield , Jason E. Meiring
发明人： Helen Wang , Scott D. Halle , Henning Haffner , Haoren Zhuang , Klaus Herold , Matthew E. Colburn , Allen H. Gabor , Zachary Baum , Scott M. Mansfield , Jason E. Meiring
IPC分类号： G03F1/14 , G03F7/26
CPC分类号： H01L21/32139 , G03F1/36 , G03F1/70 , H01L21/0274 , H01L21/28123 , H01L21/823437 , Y10S438/942
摘要： Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes depositing a gate material over a semiconductor substrate, and depositing a first resist layer over the gate material. A first mask is used to pattern the first resist layer to form first and second resist features. The first resist features include pattern for gate lines of the semiconductor device and the second resist features include printing assist features. A second mask is used to form a resist template; the second mask removes the second resist features.
摘要翻译：公开了集成电路及其制造和设计方法。例如，制造方法包括在半导体衬底上沉积栅极材料，并且在栅极材料上沉积第一抗蚀剂层。使用第一掩模来图案化第一抗蚀剂层以形成第一和第二抗蚀剂特征。第一抗蚀剂特征包括半导体器件的栅极线的图案，第二抗蚀剂特征包括印刷辅助特征。使用第二掩模形成抗蚀剂模板; 第二掩模移除第二抗蚀剂特征。

3. 发明申请

US20120180006A1 GENERATING CUT MASK FOR DOUBLE-PATTERNING PROCESS 失效
标题翻译：生成双面图案的切割面膜
公开(公告)号：US20120180006A1
公开(公告)日：2012-07-12
申请号：US12985643
申请日：2011-01-06
申请人： Zachary Baum , Henning Haffner , Scott M. Mansfield
发明人： Zachary Baum , Henning Haffner , Scott M. Mansfield
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/70
摘要： Aspects of the invention include a computer-implemented method of designing a photomask. In one embodiment, the method comprises: simulating a first photomask patterning process using a first photomask design to create simulated contours; comparing the simulated contours to a desired design; identifying regions not common to the simulated contours and the desired design; creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.
摘要翻译：本发明的方面包括设计光掩模的计算机实现的方法。在一个实施例中，该方法包括：使用第一光掩模设计来模拟第一光掩模图案化工艺以产生模拟轮廓; 将模拟轮廓与期望的设计进行比较; 识别不同于模拟轮廓和所需设计的区域; 在基于所识别的区域的第一光掩模图案化工艺之后，为第二光掩模图案化工艺创建期望的目标形状; 以及基于期望的目标形状提供用于形成第二光掩模设计的期望的目标形状。

4. 发明授权

US08039203B2 Integrated circuits and methods of design and manufacture thereof 有权
标题翻译：集成电路及其设计和制造方法
公开(公告)号：US08039203B2
公开(公告)日：2011-10-18
申请号：US12126741
申请日：2008-05-23
申请人： Helen Wang , Scott D. Halle , Henning Haffner , Haoren Zhuang , Klaus Herold , Matthew E. Colburn , Allen H. Gabor , Zachary Baum , Scott M. Mansfield , Jason E. Meiring
发明人： Helen Wang , Scott D. Halle , Henning Haffner , Haoren Zhuang , Klaus Herold , Matthew E. Colburn , Allen H. Gabor , Zachary Baum , Scott M. Mansfield , Jason E. Meiring
IPC分类号： H01L21/027
CPC分类号： H01L21/32139 , G03F1/36 , G03F1/70 , H01L21/0274 , H01L21/28123 , H01L21/823437 , Y10S438/942
摘要： Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes depositing a gate material over a semiconductor substrate, and depositing a first resist layer over the gate material. A first mask is used to pattern the first resist layer to form first and second resist features. The first resist features include pattern for gate lines of the semiconductor device and the second resist features include printing assist features. A second mask is used to form a resist template; the second mask removes the second resist features.
摘要翻译：公开了集成电路及其制造和设计方法。例如，制造方法包括在半导体衬底上沉积栅极材料，并且在栅极材料上沉积第一抗蚀剂层。使用第一掩模来图案化第一抗蚀剂层以形成第一和第二抗蚀剂特征。第一抗蚀剂特征包括半导体器件的栅极线的图案，第二抗蚀剂特征包括印刷辅助特征。使用第二掩模形成抗蚀剂模板; 第二掩模移除第二抗蚀剂特征。

5. 发明授权

US07945869B2 Mask and method for patterning a semiconductor wafer 有权
标题翻译：用于图案化半导体晶片的掩模和方法
公开(公告)号：US07945869B2
公开(公告)日：2011-05-17
申请号：US11841418
申请日：2007-08-20
申请人： Henning Haffner , Scott M. Mansfield
发明人： Henning Haffner , Scott M. Mansfield
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/30
摘要： A method for generating a mask pattern is provided. A target lithographic pattern comprising a plurality of first geometric regions is provided, wherein the regions between the plurality of first geometric regions comprise first spaces. The target lithographic pattern is transformed, and the transformed pattern is decomposed into a first pattern and a second pattern.
摘要翻译：提供了一种用于产生掩模图案的方法。提供包括多个第一几何区域的目标光刻图案，其中所述多个第一几何区域之间的区域包括第一空间。目标光刻图案被变换，变换图案被分解为第一图案和第二图案。

6. 发明授权

US06421820B1 Semiconductor device fabrication using a photomask with assist features 失效
标题翻译：使用具有辅助功能的光掩模的半导体器件制造
公开(公告)号：US06421820B1
公开(公告)日：2002-07-16
申请号：US09460034
申请日：1999-12-13
申请人： Scott M. Mansfield , Lars W. Liebmann , Shahid Butt , Henning Haffner
发明人： Scott M. Mansfield , Lars W. Liebmann , Shahid Butt , Henning Haffner
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G03F7/70441
摘要： A semiconductor device can be fabricated using a photomask that has been modified using an assist feature design method (see e.g., FIG. 4A) based on normalized feature spacing. Before the device can be fabricated, a layout of original shapes is designed (402). For at least some of the original shapes, the width of the shape and a distance to at least one neighboring shape are measured (404). A modified shape can then be generated by moving edges of the original shape based on the width and distance measurements (406). This modification can be performed on some or all of the original shapes (408). For each of the modified shapes, a normalized space and correct number of assist features can be computed (410). The layout is then modified by adding the correct number of assist features in a space between the modified shape and the neighboring shape (412). This modified layout can then be used in producing a photomask, which can in turn be used to produce a semiconductor device.
摘要翻译：可以使用已经基于归一化特征间隔使用辅助特征设计方法（参见例如图4A）修改的光掩模来制造半导体器件。在可以制造设备之前，设计原始形状的布局（402）。对于至少一些原始形状，测量形状的宽度和至少一个相邻形状的距离（404）。然后可以通过基于宽度和距离测量来移动原始形状的边缘来生成修改的形状（406）。可以对部分或全部原始形状执行该修改（408）。对于每个修改的形状，可以计算归一化空间和正确数量的辅助特征（410）。然后通过在修改的形状和相邻形状之间的空间中添加正确数量的辅助特征来修改布局（412）。然后，该修改后的布局可用于制造光掩模，光掩模又可用于制造半导体器件。

7. 发明申请

US20090053654A1 Mask and Method for Patterning a Semiconductor Wafer 有权
标题翻译：用于图案化半导体晶片的掩模和方法
公开(公告)号：US20090053654A1
公开(公告)日：2009-02-26
申请号：US11841418
申请日：2007-08-20
申请人： Henning Haffner , Scott M. Mansfield
发明人： Henning Haffner , Scott M. Mansfield
IPC分类号： G03C5/00
CPC分类号： G03F1/30
摘要： A method for generating a mask pattern is provided. A target lithographic pattern comprising a plurality of first geometric regions is provided, wherein the regions between the plurality of first geometric regions comprise first spaces. The target lithographic pattern is transformed, and the transformed pattern is decomposed into a first pattern and a second pattern.
摘要翻译：提供了一种用于产生掩模图案的方法。提供包括多个第一几何区域的目标光刻图案，其中所述多个第一几何区域之间的区域包括第一空间。目标光刻图案被变换，变换图案被分解为第一图案和第二图案。

8. 发明授权

US08875063B2 Mask layout formation 有权
标题翻译：面膜布局形成
公开(公告)号：US08875063B2
公开(公告)日：2014-10-28
申请号：US12901595
申请日：2010-10-11
申请人： Zachary Baum , Scott D. Halle , Henning Haffner
发明人： Zachary Baum , Scott D. Halle , Henning Haffner
IPC分类号： G06F17/50 , G03F1/00 , G03F1/30
CPC分类号： G03F1/30 , G03F1/0069
摘要： A method for forming a mask layout is described. A plurality of phase shapes are formed on either side of a critical feature of a design layout of an intergrated circuit chip having a plurality of critical features. A plurality of transition edges are identified from the edges of each phase shape. Each transition edge is parallel to critical feature. A transition space is identified as defined by one of the group including two transition edges and one transition edge. A transition polygon is formed by closing each transition space with at least one closing edge. Each transition polygon is transformed into a printing assist feature. A mask layout is formed from the printing assist features and critical features.
摘要翻译：描述了形成掩模布局的方法。在具有多个关键特征的集成电路芯片的设计布局的关键特征的任一侧上形成多个相位形状。从每个相位形状的边缘识别多个过渡边缘。每个过渡边缘与关键特征平行。识别由包括两个过渡边缘和一个过渡边缘的组之一所定义的过渡空间。通过用至少一个关闭边缘关闭每个过渡空间来形成过渡多边形。每个过渡多边形被转换成打印辅助功能。从打印辅助功能和关键特征形成面罩布局。

9. 发明申请

US20120089953A1 MASK LAYOUT FORMATION 有权
标题翻译：掩蔽布局形成
公开(公告)号：US20120089953A1
公开(公告)日：2012-04-12
申请号：US12901595
申请日：2010-10-11
申请人： Zachary Baum , Scott D. Halle , Henning Haffner
发明人： Zachary Baum , Scott D. Halle , Henning Haffner
IPC分类号： G06F17/50
CPC分类号： G03F1/30 , G03F1/0069
摘要： A method for mask layout formation including forming a plurality of phase shapes on either side of a critical feature of a design layout of an integrated circuit chip having a plurality of critical features, wherein each phase shape has an edge; identifying a plurality of transition edges from the edges, wherein each transition edge is parallel to a critical feature; identifying a transition space defined by one of a group including two transition edges, wherein the space is external to all phase shapes, and one transition edge, wherein the space is external to all phase shapes; forming a transition polygon by closing each transition space with at least one closing edge, wherein each closing edge is perpendicular to the plurality of transition edges; transforming each transition polygon into a printing assist feature; and forming a first mask layout or a second mask layout from the printing assist features and the critical features.
摘要翻译：一种用于掩模布局形成的方法，包括在具有多个关键特征的集成电路芯片的设计布局的关键特征的任一侧上形成多个相位形状，其中每个相位形状具有边缘; 从边缘识别多个过渡边缘，其中每个过渡边缘平行于关键特征; 识别由包括两个过渡边缘的组之一限定的过渡空间，其中所述空间在所有相位形状外部，以及一个过渡边缘，其中所述空间在所有相位形状外部; 通过用至少一个闭合边缘闭合每个过渡空间来形成过渡多边形，其中每个闭合边缘垂直于多个过渡边缘; 将每个过渡多边形变换为打印辅助特征; 以及从打印辅助特征和关键特征形成第一掩模布局或第二掩模布局。

10. 发明授权

US08426114B2 L-shaped feature, method of making an L-shaped feature and method of making an L-shaped structure 有权
标题翻译： L形特征，制作L形特征的方法和制作L形结构的方法
公开(公告)号：US08426114B2
公开(公告)日：2013-04-23
申请号：US13016841
申请日：2011-01-28
申请人： Henning Haffner , Martin Ostermayr
发明人： Henning Haffner , Martin Ostermayr
IPC分类号： G03F7/00
CPC分类号： G03F1/36 , G03F1/32
摘要： In accordance with an embodiment of the present invention, a method for making a semiconductor device comprises forming a photo sensitive layer on a semiconductive substrate, and forming an L-shaped structure in the photo sensitive layer by exposing the photo sensitive layer to light via a reticle, wherein the reticle comprises an L-shapes feature having a first non-orthogonal edge at an intersection of two legs of the L-shaped feature.
摘要翻译：根据本发明的实施例，制造半导体器件的方法包括在半导体衬底上形成感光层，并且通过经由光敏层曝光光敏层而在光敏层中形成L形结构掩模版，其中所述标线片包括在所述L形特征的两条腿的交叉处具有第一非正交边缘的L形特征。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式