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    • 1. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US4947229A
    • 1990-08-07
    • US123969
    • 1987-11-23
    • Yutaka TanakaToshiki MorimotoSeiji Watanabe
    • Yutaka TanakaToshiki MorimotoSeiji Watanabe
    • H01L21/82H01L21/3205H01L21/822H01L23/528H01L27/04
    • H01L23/528H01L2924/0002Y10S257/923
    • A semiconductor integrated circuit (IC) comprises a functional block which includes a plurality or first and second power source wiring layers arranged parallel to one another and formed so as to extend in a predetermined direction. A plurality of element regions are located between adjacent pairs of the first and second power source wiring layers. A cell block on the (IC) includes a plurality of cell column areas each having third and fourth power source wiring layers which are arranged parallel to each other and formed so as to extend in the predetermined direction. An element region is located between the third and fourth power source wiring layers. A plurality of wiring regions are located between adjacent cell column areas. A wiring interconnection section is also included for connecting the first and second power source wiring layers to the function block and includes a fifth power source wiring layer of double-layered structure having upper and lower layers respectively connected to the first and second power source wiring layers. The wiring interconnection section includes first and second segments which are also formed to extend in the predetermined direction, so as to connect the lower and upper layers of the fifth power source wiring layer to the third and fourth power source wiring layers.
    • 半导体集成电路(IC)包括功能块,其包括彼此平行布置并且沿预定方向延伸的多个或第一和第二电源布线层。 多个元件区域位于第一和第二电源布线层的相邻对之间。 (IC)上的单元块包括多个单元列区域,每个单元列区域具有彼此平行布置并且沿预定方向延伸的第三和第四电源布线层。 元件区域位于第三和第四电源布线层之间。 多个布线区域位于相邻的单元列区域之间。 还包括用于将第一和第二电源布线层连接到功能块的布线互连部分,并且包括具有分别连接到第一和第二电源布线层的上层和下层的双层结构的第五电源布线层 。 布线互连部分包括也形成为沿预定方向延伸的第一和第二段,以便将第五电源布线层的下层和上层连接到第三和第四电源布线层。
    • 2. 发明授权
    • Semiconductor IC (integrated circuit) device
    • 半导体IC(集成电路)器件
    • US4883980A
    • 1989-11-28
    • US238229
    • 1988-08-26
    • Toshiki MorimotoSeiji Watanabe
    • Toshiki MorimotoSeiji Watanabe
    • H01L21/822H01L21/82H01L23/528H01L27/04H01L27/118
    • H01L23/528H01L2924/0002
    • A semiconductor integrated circuit device is disclosed which comprises a plurality of cell rows each including a plurality of standard cells, signal connection cells provided one at each of the cell rows and located on one straight line across that cell row array, a line for connection cells which is connected to the signal connection cell and adapted to supply a signal which is propagated via the signal connection cell to the cell in the corresponding cell row, and cell-to-cell connection lines each connecting the signal connection cells together and having a broader connection width than that of an ordinary connection line. In the semiconductor integrated circuit device of the present invention the respective signal connection cells are connected together by the cell-to-cell connection line having a broader connection width than that of the ordinary connection line, so that a signal is propagated to the respective cell row in a low-resistance way. The respective signal connection cells are each arranged at the respective cell row in a manner to be located on a single straight line to achieve the reduction of a distance between the signal connection lines. Since a signal coming from the signal connection cell at each cell row is supplied in a row unit to the associated cell in the respective cell row via the connection line for cell rows, a signal propagation over a minimum connection line length is assured.
    • 6. 发明申请
    • Voltage Controlled Oscillation Circuit
    • 电压控制振荡电路
    • US20080136539A1
    • 2008-06-12
    • US11885410
    • 2007-03-12
    • Takashi OkaSeiji Watanabe
    • Takashi OkaSeiji Watanabe
    • H03K3/03
    • H03K3/0315H03L7/0995
    • In a voltage controlled oscillation circuit including a cascade connection of a voltage-to-current conversion circuit (310) for generating an input voltage converted current which is a current corresponding to an input voltage and a current controlled oscillation circuit (120) of which an oscillation frequency varies according to the input voltage converted current, the voltage-to-current conversion circuit (310) includes a first current source for outputting a current in proportion to the input voltage and a plurality of second current sources for outputting a current in proportion to a voltage obtained by shifting the input voltage. Then, a current obtained by adding a current output from the first current source and currents output from the plurality of current sources is output as the input voltage converted current to the current controlled oscillation circuit (120).
    • 在包括用于产生作为与输入电压对应的电流的输入电压转换电流的电压 - 电流转换电路(310)的级联连接的电压控制振荡电路和电流控制振荡电路(120)中, 振荡频率根据输入电压转换电流而变化,电压 - 电流转换电路(310)包括用于输出与输入电压成比例的电流的第一电流源和用于按比例输出电流的多个第二电流源 达到通过移位输入电压而获得的电压。 然后,将从第一电流源输出的电流和从多个电流源输出的电流相加得到的电流作为输入电压转换电流被输出到电流控制振荡电路(120)。
    • 7. 发明申请
    • Semiconductor Integrated Circuit Having Jitter Measuring Function
    • 具有抖动测量功能的半导体集成电路
    • US20080129562A1
    • 2008-06-05
    • US11661404
    • 2005-04-13
    • Keisuke NakahiraSeiji WatanabeTetsuo ArakawaAkifumi TakeyaTakashi Oka
    • Keisuke NakahiraSeiji WatanabeTetsuo ArakawaAkifumi TakeyaTakashi Oka
    • H03M1/06
    • G11B7/005G01R31/31709G11B7/22G11B20/10009G11B20/10027G11B20/10203G11B20/24
    • A semiconductor integrated circuit having jitter measuring function includes a slicer (11), a T/V converter (12), an A/D converter (13), a processor (14), a multiplexer (15), and a correction section (16). The slicer (11) binarizes an input signal to generate a data signal. The T/V converter (12) outputs a voltage corresponding to the data length of an input signal. The multiplexer (15) selects the data signal or a reference signal as the input signal to the T/V converter (12). The A/D converter (13) converts the output voltage of the TN converter (12) to digital data. The processor (14) measures jitter in the input signal to the T/V converter (12) in accordance with the digital data. The correction section (16) compares the output voltage of the T/V converter (12) produced where the reference signal has been selected by the multiplexer (15) with a predetermined voltage, and corrects the output characteristics of the T/V converter (12) according to the comparison results.
    • 具有抖动测量功能的半导体集成电路包括限幅器(11),T / V转换器(12),A / D转换器(13),处理器(14),多路复用器(15)和校正部分 16)。 限幅器(11)对输入信号进行二值化以产生数据信号。 T / V转换器(12)输出与输入信号的数据长度对应的电压。 多路复用器(15)选择数据信号或参考信号作为到T / V转换器(12)的输入信号。 A / D转换器(13)将TN转换器(12)的输出电压转换成数字数据。 处理器(14)根据数字数据测量到T / V转换器(12)的输入信号的抖动。 校正部分(16)将由多路复用器(15)选择的参考信号所产生的T / V转换器(12)的输出电压与预定电压进行比较,并校正T / V转换器的输出特性( 12)根据比较结果。