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    • 8. 发明申请
    • Solar Cell And Production Thereof
    • 太阳能电池及其制作
    • US20070295396A1
    • 2007-12-27
    • US10564116
    • 2005-01-12
    • Yasuhito TakahashiYukiyoshi Ono
    • Yasuhito TakahashiYukiyoshi Ono
    • H01L31/00
    • H01L31/0749H01L31/022483H01L31/02363Y02E10/541Y02P70/521
    • A solar cell is configured to include: a substrate (21); a conductive film (22) formed on the substrate (21); a compound semiconductor layer (23) formed on the conductive film (22), including a p-type semiconductor crystal containing an element of Group Ib, an element of Group IIIb, and an element of Group VIb; a n-type window layer (24) formed on the compound semiconductor layer (23), having apertures (29); and a n-type transparent conductive film formed on the n-type window layer (24) and on portions of the compound semiconductor layer (23) at the apertures of the n-type window layer (24). The compound semiconductor layer (23) includes high-resistance parts (23B), in portions of the compound semiconductor layer (23) in the vicinity of a surface thereof on a side opposite to the conductive film (22), and the high-resistance parts (23B) contain a n-type impurity doped in the p-type semiconductor crystal. The high-resistance parts (23B) are located under the apertures (29) of the n-type window layer (24), respectively.
    • 太阳能电池被配置为包括:基板(21); 形成在所述基板(21)上的导电膜(22); 形成在导电膜(22)上的化合物半导体层(23),包括含有Ib族元素,IIIb族元素和VIb族元素的p型半导体晶体; 形成在化合物半导体层(23)上的具有孔(29)的n型窗口层(24); 以及形成在n型窗口层(24)上的n型透明导电膜和在n型窗口层(24)的孔处的化合物半导体层(23)的部分上。 化合物半导体层(23)在化合物半导体层(23)的与导电膜(22)相反的一侧的表面附近的部分包含高电阻部(23B) 电阻部分(23B)包含掺杂在p型半导体晶体中的n型杂质。 高电阻部分(23B)分别位于n型窗口层(24)的孔(29)的下方。