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1. 发明申请

US20130171799A1 CURRENT STEERING ELEMENT AND NON-VOLATILE MEMORY ELEMENT INCORPORATING CURRENT STEERING ELEMENT 有权
标题翻译：电流转向元件和非易失性存储元件包含电流转向元件
公开(公告)号：US20130171799A1
公开(公告)日：2013-07-04
申请号：US13823667
申请日：2011-09-16
申请人： Ryoko Miyanaga , Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Koji Arita
发明人： Ryoko Miyanaga , Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Koji Arita
IPC分类号： H01L45/00 , H01L21/768
CPC分类号： H01L45/16 , H01L21/768 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L45/00 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A current steering element (100) formed such that the current steering element covers a lower opening (105) of a via hole (104) formed in an interlayer insulating layer (102), comprises: a corrosion-suppressing layer (106) formed on a lower side of a lower opening of the via hole such that the corrosion-suppressing layer covers an entire portion of the lower opening; a second electrode layer (108) formed under the corrosion-suppressing layer and comprising a material different from a material of the corrosion-suppressing layer; a current steering layer (110) formed under the second electrode layer such that the current steering layer is physically in contact with the second electrode layer; and a first electrode layer (112) formed under the current steering layer such that the first electrode layer is physically in contact with the current steering layer; and the first electrode layer, the current steering layer and the second electrode layer constitute one of a MSM diode and a MIM diode.
摘要翻译：一种形成为当前的操舵元件覆盖形成在层间绝缘层（102）中的通孔（104）的下开口（105）的电流控制元件（100），包括：形成在通孔的下开口的下侧，使得防蚀层覆盖下开口的整个部分; 形成在所述腐蚀抑制层下方并且包含不同于所述腐蚀抑制层的材料的材料的第二电极层（108）形成在所述第二电极层下方的电流转向层（110），使得所述电流导向层物理地与所述第二电极层接触; 以及第一电极层（112），形成在所述电流导向层下方，使得所述第一电极层物理地与所述电流转向层接触; 并且第一电极层，电流导向层和第二电极层构成MSM二极管和MIM二极管之一。

2. 发明申请

US20120069632A1 CURRENT CONTROL, MEMORY ELEMENT, MEMORY DEVICE, AND PRODUCTION METHOD FOR CURRENT CONTROL ELEMENT 有权
标题翻译：电流控制，存储元件，存储器件和电流控制元件的生产方法
公开(公告)号：US20120069632A1
公开(公告)日：2012-03-22
申请号：US13321018
申请日：2011-03-10
申请人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
发明人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
IPC分类号： G11C11/00 , H01L21/66 , H01L47/00
CPC分类号： H01L27/2409 , H01L45/146
摘要： Provided is a current steering element that can prevent write didturb even when an electrical pulse with different polarities is applied and that can cause a large current to flow through a variable resistance element. The current steering element includes a first electrode (32), a second electrode (31), and a current steering layer (33). The current steering layer (33) comprises SiNx (where 0
摘要翻译：提供了即使当施加具有不同极性的电脉冲并且可能导致大电流流过可变电阻元件时也能够防止写入干扰的电流导向元件。当前的转向元件包括第一电极（32），第二电极（31）和电流转向层（33）。当前的转向层（33）包括添加有氢或氟的SiNx（其中0

3. 发明授权

US08759190B2 Current steering element and non-volatile memory element incorporating current steering element 有权
标题翻译：目前的导向元件和非易失性存储元件结合了当前的转向元件
公开(公告)号：US08759190B2
公开(公告)日：2014-06-24
申请号：US13823667
申请日：2011-09-16
申请人： Ryoko Miyanaga , Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Koji Arita
发明人： Ryoko Miyanaga , Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Koji Arita
IPC分类号： H01L21/20
CPC分类号： H01L45/16 , H01L21/768 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L45/00 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A current steering element (100) formed such that the current steering element covers a lower opening (105) of a via hole (104) formed in an interlayer insulating layer (102), comprises: a corrosion-suppressing layer (106) formed on a lower side of a lower opening of the via hole such that the corrosion-suppressing layer covers an entire portion of the lower opening; a second electrode layer (108) formed under the corrosion-suppressing layer and comprising a material different from a material of the corrosion-suppressing layer; a current steering layer (110) formed under the second electrode layer such that the current steering layer is physically in contact with the second electrode layer; and a first electrode layer (112) formed under the current steering layer such that the first electrode layer is physically in contact with the current steering layer; and the first electrode layer, the current steering layer and the second electrode layer constitute one of a MSM diode and a MIM diode.
摘要翻译：一种形成为当前的操舵元件覆盖形成在层间绝缘层（102）中的通孔（104）的下开口（105）的电流控制元件（100），包括：形成在通孔的下开口的下侧，使得防蚀层覆盖下开口的整个部分; 形成在所述腐蚀抑制层下方并且包含不同于所述腐蚀抑制层的材料的材料的第二电极层（108）形成在所述第二电极层下方的电流转向层（110），使得所述电流导向层物理地与所述第二电极层接触; 以及第一电极层（112），形成在所述电流导向层下方，使得所述第一电极层物理地与所述电流转向层接触; 并且第一电极层，电流导向层和第二电极层构成MSM二极管和MIM二极管之一。

4. 发明授权

US08482958B2 Current steering element, memory element, memory, and method of manufacturing current steering element 有权
标题翻译：当前的导向元件，存储元件，存储器以及制造电流转向元件的方法
公开(公告)号：US08482958B2
公开(公告)日：2013-07-09
申请号：US13321018
申请日：2011-03-10
申请人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
发明人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , H01L45/146
摘要： Provided is a current steering element that can prevent write didturb even when an electrical pulse with different polarities is applied and that can cause a large current to flow through a variable resistance element. The current steering element includes a first electrode (32), a second electrode (31), and a current steering layer (33). The current steering layer (33) comprises SiNx (where 0
摘要翻译：提供了即使当施加具有不同极性的电脉冲并且可能导致大电流流过可变电阻元件时也能够防止写入干扰的电流导向元件。当前的转向元件包括第一电极（32），第二电极（31）和电流转向层（33）。当前的转向层（33）包括加入氢或氟的SiNx（其中0 <0.85）。当D（D = D0×1022原子/ cm3）表示氢或氟的密度时，d（nm）表示电流导向层（33）的厚度，V0（V）表示适用于第一电极（32）和第二电极（31）D，x，d和V0满足下式。（ln（1000（C·exp（α·d）exp（β·x））-1）γ）2 @ V0 ）γ）2-（ln（10000（C·exp（α·d）exp（β·x））-1）γ）2/2> = 0其中C = k1×D0k2，α，β， k1和k2是常数。

5. 发明授权

US09000506B2 Variable resistance nonvolatile memory element and method for manufacturing the same 有权
标题翻译：可变电阻非易失性存储元件及其制造方法
公开(公告)号：US09000506B2
公开(公告)日：2015-04-07
申请号：US13501624
申请日：2011-11-18
申请人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
发明人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
IPC分类号： H01L27/108 , H01L45/00 , H01L27/24
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1675
摘要： A nonvolatile memory element which inhibits deterioration of an oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element are provided. The nonvolatile memory element includes a first electrode layer formed above a substrate, a variable resistance layer disposed on the first electrode layer, and a second electrode layer disposed on the variable resistance layer, and the variable resistance layer has a two-layer structure in which an oxygen- and/or nitrogen-deficient tantalum oxynitride layer and a tantalum oxide layer are stacked.
摘要翻译：提供一种非易失性存储元件，其抑制由于热预算导致的可变电阻层的氧浓度分布的劣化，并能够在低电压下稳定地工作，并且提供了一种制造非易失性存储元件的方法。非易失性存储元件包括形成在基板上的第一电极层，设置在第一电极层上的可变电阻层和设置在可变电阻层上的第二电极层，可变电阻层具有两层结构，其中氧和/或氮缺乏的氮氧化钽层和氧化钽层被堆叠。

6. 发明授权

US08530321B2 Variable resistance element and manufacturing method thereof 有权
标题翻译：可变电阻元件及其制造方法
公开(公告)号：US08530321B2
公开(公告)日：2013-09-10
申请号：US13515761
申请日：2010-12-14
申请人： Takeki Ninomiya , Yoshio Kawashima , Yukio Hayakawa , Takumi Mikawa
发明人： Takeki Ninomiya , Yoshio Kawashima , Yukio Hayakawa , Takumi Mikawa
IPC分类号： H01L21/20
CPC分类号： C23C26/00 , C23C28/00 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1675
摘要： A variable resistance element comprises, when M is a transition metal element, O is oxygen, and x and y are positive numbers satisfying y>x; a lower electrode; a first oxide layer formed on the lower electrode and comprising MOx when a content ratio of O with respect to M is x; a second oxide layer formed on the first oxide layer and comprising MOy when a content ratio of O with respect to M is y; an upper electrode formed on the second oxide layer; a protective layer formed on the upper electrode and comprising an electrically conductive material having a composition different from a composition of the upper electrode; an interlayer insulating layer formed to cover the protective layer; and an upper contact plug formed inside an upper contact hole penetrating the interlayer insulating layer.
摘要翻译：可变电阻元件包括当M是过渡金属元素时，O是氧，x和y是满足y> x的正数; 下电极当相对于M的含量比为O时，形成在下电极上并包含MOx的第一氧化物层; 当相对于M的含量比为O时，形成在第一氧化物层上并包含MOy的第二氧化物层; 形成在所述第二氧化物层上的上电极; 形成在上电极上并具有不同于上电极的组成的组成的导电材料的保护层; 形成为覆盖保护层的层间绝缘层; 以及形成在贯穿层间绝缘层的上接触孔内部的上接触插塞。

7. 发明申请

US20130178042A1 METHOD FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT 有权
标题翻译：制造可变电阻元件的方法
公开(公告)号：US20130178042A1
公开(公告)日：2013-07-11
申请号：US13809473
申请日：2012-01-30
申请人： Takeki Ninomiya , Yukio Hayakawa , Takumi Mikawa , Takeshi Takagi
发明人： Takeki Ninomiya , Yukio Hayakawa , Takumi Mikawa , Takeshi Takagi
IPC分类号： H01L45/00
CPC分类号： H01L45/1641 , G11C13/0007 , H01L45/08 , H01L45/146 , H01L45/1608 , H01L45/1675
摘要： Provided is a method for manufacturing a variable resistance element, the method including: forming a first electrode material layer above a substrate; forming a first tantalum oxide material layer; forming a second tantalum oxide material layer; forming a second electrode material layer; and annealing at least the first tantalum oxide material layer after forming the first tantalum oxide material layer and before forming the second electrode material layer, wherein an oxygen content percentage of one of the first tantalum oxide material layer and the second tantalum oxide material layer is higher than an oxygen content percentage of the other.
摘要翻译：提供一种制造可变电阻元件的方法，该方法包括：在衬底上形成第一电极材料层; 形成第一钽氧化物材料层; 形成第二钽氧化物材料层; 形成第二电极材料层; 以及在形成所述第一钽氧化物材料层之后并且在形成所述第二电极材料层之前至少退火所述第一钽氧化物材料层，其中所述第一钽氧化物材料层和所述第二氧化钽材料层中的一个的氧含量百分比较高比另一个的氧含量百分比。

8. 发明申请

US20130119344A1 NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失存储元件及其制造方法
公开(公告)号：US20130119344A1
公开(公告)日：2013-05-16
申请号：US13810800
申请日：2011-10-06
申请人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
发明人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/101 , H01L45/08 , H01L45/146 , H01L45/1608 , H01L45/1625
摘要： A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MOx (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MOy (where x>y), and the third transition metal oxide layer having a composition expressed as MOz (where y>z).
摘要翻译：可变电阻非易失性存储元件包括：第一电极; 第二电极; 以及可变电阻层，其具有基于施加在所述电极之间的电信号而可逆地变化的电阻值，其中所述可变电阻层具有通过堆叠第一过渡金属氧化物层，第二过渡金属氧化物层和第三过渡金属氧化物层而形成的结构过渡金属氧化物层，第一过渡金属氧化物层具有以MOx表示的组成（其中M是过渡金属，O是氧），第二过渡金属氧化物层具有以MOy表示的组成（其中x> y ）和具有表示为MOz（其中y> z）的组成的第三过渡金属氧化物层。

9. 发明授权

US09184381B2 Nonvolatile storage element and method for manufacturing same 有权
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US09184381B2
公开(公告)日：2015-11-10
申请号：US13810800
申请日：2011-10-06
申请人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
发明人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
IPC分类号： H01L47/00 , H01L45/00 , H01L27/10
CPC分类号： H01L45/145 , H01L27/101 , H01L45/08 , H01L45/146 , H01L45/1608 , H01L45/1625
摘要： A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MOx (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MOy (where x>y), and the third transition metal oxide layer having a composition expressed as MOz (where y>z).
摘要翻译：可变电阻非易失性存储元件包括：第一电极; 第二电极; 以及可变电阻层，其具有基于施加在所述电极之间的电信号而可逆地变化的电阻值，其中所述可变电阻层具有通过堆叠第一过渡金属氧化物层，第二过渡金属氧化物层和第三过渡金属氧化物层而形成的结构过渡金属氧化物层，第一过渡金属氧化物层具有以MOx表示的组成（其中M是过渡金属，O是氧），第二过渡金属氧化物层具有以MOy表示的组成（其中x> y ）和具有表示为MOz（其中y> z）的组成的第三过渡金属氧化物层。

10. 发明授权

US08889478B2 Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element 有权
标题翻译：非易失性半导体存储元件的制造方法及非易失性半导体存储元件
公开(公告)号：US08889478B2
公开(公告)日：2014-11-18
申请号：US13637465
申请日：2011-11-18
申请人： Takumi Mikawa , Yukio Hayakawa , Yoshio Kawashima , Takeki Ninomiya
发明人： Takumi Mikawa , Yukio Hayakawa , Yoshio Kawashima , Takeki Ninomiya
IPC分类号： H01L45/00 , H01L21/8239 , H01L21/02 , H01L27/24 , H01L27/102
CPC分类号： H01L45/1233 , H01L27/1021 , H01L27/2409 , H01L45/08 , H01L45/146 , H01L45/1675
摘要： Provided is a method for manufacturing a variable resistance nonvolatile semiconductor memory element, and a nonvolatile semiconductor memory element which make it possible to operate at a low voltage and high speed when initial breakdown is caused, and exhibit favorable diode element characteristics. The method for manufacturing the nonvolatile semiconductor memory element includes, after forming a top electrode of a variable resistance element and at least before forming a top electrode of an MSM diode element, oxidizing to insulate a portion of a variable resistance film in a region around an end face of a variable resistance layer.
摘要翻译：提供一种用于制造可变电阻非易失性半导体存储元件的方法，以及使得可以在初始击穿时以低电压和高速操作的可变电阻非易失性半导体存储元件，并且表现出良好的二极管元件特性。制造非易失性半导体存储元件的方法包括：在形成可变电阻元件的顶部电极之后，并且至少在形成MSM二极管元件的顶部电极之前，氧化以使可变电阻膜的一部分在一个周围的区域中绝缘可变电阻层的端面。

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