专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06750542B2 Sputter target, barrier film and electronic component 有权
标题翻译：溅射靶，阻挡膜和电子元件
公开(公告)号：US06750542B2
公开(公告)日：2004-06-15
申请号：US10257404
申请日：2002-10-21
申请人： Yukinobu Suzuki , Takashi Ishigami , Yasuo Kohsaka , Naomi Fujioka , Takashi Watanabe , Koichi Watanabe , Kenya Sano
发明人： Yukinobu Suzuki , Takashi Ishigami , Yasuo Kohsaka , Naomi Fujioka , Takashi Watanabe , Koichi Watanabe , Kenya Sano
IPC分类号： H01L2348
CPC分类号： H01L21/7687 , C23C14/0641 , C23C14/3414 , H01L21/2855 , H01L21/28568 , H01L28/55 , H01L28/75
摘要： A sputter target is made of a Ti—Al alloy containing Al in the range of 1 to 30 atm %. In the Ti—Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti—Al alloy is 500 &mgr;m or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti—Al—N film as a barrier film is formed by using the sputter target made of the Ti—Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate.
摘要翻译：溅射靶由含有1〜30atm％的Al的Ti-Al合金构成。在构成溅射靶的Ti-Al合金中，Al以Ti中的固溶态和Al与Ti形成金属间化合物的状态中的至少一种存在，并且整个靶中的Al含量的变化被限制在10 ％。此外，Ti-Al合金的平均晶粒直径为500μm以下，整个靶的晶粒直径的变化被限制在30％以内。通过使用如上所述的由Ti-Al合金制成的溅射靶，形成作为阻挡膜的Ti-Al-N膜。电子部件包括形成在半导体基板上的阻挡膜。

2. 发明授权

US09437486B2 Sputtering target 有权
标题翻译：溅射目标
公开(公告)号：US09437486B2
公开(公告)日：2016-09-06
申请号：US13280873
申请日：2011-10-25
申请人： Koichi Watanabe , Yasuo Kohsaka , Takashi Watanabe , Takashi Ishigami , Yukinobu Suzuki , Naomi Fujioka
发明人： Koichi Watanabe , Yasuo Kohsaka , Takashi Watanabe , Takashi Ishigami , Yukinobu Suzuki , Naomi Fujioka
IPC分类号： C22C27/02 , C23C14/34 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C14/3414
摘要： A sputtering target contains high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within ±30% as a whole target. Dispersion of the oxygen content is within ±80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.
摘要翻译：溅射靶包含Ta含量为3000ppm以下且氧含量为200ppm以下的高纯度Nb。所有溅射靶中的Ta含量的分散在整个靶内的±30％以内。氧含量的分散在整个目标的±80％以内。根据这样的溅射靶，可以实现低电阻率的互连膜。此外，溅射靶中的每个晶粒的晶粒直径在平均粒径的0.1〜10倍的范围内，相邻晶粒的晶粒比例在0.1〜10的范围内。根据这样的溅射靶，巨大的尘埃可以大大的抑制发生。溅射靶适合于形成作为Al互连的衬垫材料的Nb膜。

3. 发明申请

US20120038050A1 SPUTTERING TARGET 审中-公开
标题翻译：飞溅目标
公开(公告)号：US20120038050A1
公开(公告)日：2012-02-16
申请号：US13280873
申请日：2011-10-25
申请人： Koichi WATANABE , Yasuo Kohsaka , Takashi Watanabe , Takashi Ishigami , Yukinobu Suzuki , Naomi Fujioka
发明人： Koichi WATANABE , Yasuo Kohsaka , Takashi Watanabe , Takashi Ishigami , Yukinobu Suzuki , Naomi Fujioka
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L21/76843 , C23C14/3414
摘要： A sputtering target consists of high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within ±30% as a whole target. Dispersion of the oxygen content is within ±80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.
摘要翻译：溅射靶由Ta含量为3000ppm以下，氧含量为200ppm以下的高纯Nb构成。所有溅射靶中的Ta含量的分散在整个靶内的±30％以内。氧含量的分散在整个目标的±80％以内。根据这样的溅射靶，可以实现低电阻率的互连膜。此外，溅射靶中的每个晶粒的晶粒直径在平均粒径的0.1〜10倍的范围内，相邻晶粒的晶粒比例在0.1〜10的范围内。根据这样的溅射靶，巨大的尘埃可以大大的抑制发生。溅射靶适合于形成作为Al互连的衬垫材料的Nb膜。

4. 发明申请

US20050029094A1 Tungsten sputtering target and method of manufacturing the target 有权
标题翻译：钨溅射靶和制造目标的方法
公开(公告)号：US20050029094A1
公开(公告)日：2005-02-10
申请号：US10363257
申请日：2001-09-03
申请人： Koichi Watanabe , Yoichiro Yabe , Takashi Ishigami , Takashi Watanabe , Hitoshi Aoyama , Yasuo Kohsaka , Yukinobu Suzuki
发明人： Koichi Watanabe , Yoichiro Yabe , Takashi Ishigami , Takashi Watanabe , Hitoshi Aoyama , Yasuo Kohsaka , Yukinobu Suzuki
IPC分类号： C23C14/34 , C23C14/00
CPC分类号： C23C14/3414
摘要： The tungsten sputtering target of the present invention is characterized in that a half band width of a peak corresponding to a crystal plane (110) of the target is 0.35 or less when a surface of the target to be sputtered is analyzed by X-ray diffraction. Further, the method of manufacturing the tungsten sputtering target of the present invention is characterized by comprising the steps of: pressing a high purity tungsten powder to form a pressed compact; sintering the pressed compact to form a sintered body; working the sintered body to obtain a shape of a target; subjecting the target to a grinding work of at least one of rotary grinding and polishing; and subjecting the target to a finishing work of at least one of etching and reverse sputtering. According to the above structure, there can be provided a tungsten sputtering target and method of manufacturing the target capable of improving the in-plain uniformity in thickness of the W thin film formed on a substrate, and capable of effectively reducing the generation of the particles.
摘要翻译：本发明的钨溅射靶的特征在于，当通过X射线衍射分析待溅射靶的表面时，对应于靶的晶面（110）的峰的半带宽为0.35以下。此外，本发明的钨溅射靶的制造方法的特征在于包括以下步骤：将高纯度钨粉按压以形成压制成型体; 烧结压制成型体的烧结体; 加工烧结体以获得靶的形状; 使目标进行旋转研磨和抛光中的至少一个的研磨工作; 并对靶进行蚀刻和反溅镀中的至少一种的精加工。根据上述结构，可以提供一种钨溅射靶和能够提高形成在基板上的W薄膜的厚度均匀性均匀化的靶的方法，能够有效地减少粒子的产生。

5. 发明授权

US07718117B2 Tungsten sputtering target and method of manufacturing the target 有权
标题翻译：钨溅射靶和制造目标的方法
公开(公告)号：US07718117B2
公开(公告)日：2010-05-18
申请号：US10363257
申请日：2001-09-03
申请人： Koichi Watanabe , Yoichiro Yabe , Takashi Ishigami , Takashi Watanabe , Hitoshi Aoyama , Yasuo Kohsaka , Yukinobu Suzuki
发明人： Koichi Watanabe , Yoichiro Yabe , Takashi Ishigami , Takashi Watanabe , Hitoshi Aoyama , Yasuo Kohsaka , Yukinobu Suzuki
IPC分类号： B22F1/02 , C23C14/00
CPC分类号： C23C14/3414
摘要： A method of manufacturing a tungsten sputtering target includes pressing a high purity tungsten powder to form a pressed compact, first sintering the pressed compact at a temperature of 1450-1700° C. for one hour or longer after the pressed compact is heated at a heating-up rate of 2-5° C./min on the way to a maximum sintering temperature, second sintering the pressed compact to form a sintered body at a temperature of 1900° C. or higher for 5 hours or longer, working the sintered body to obtain a shape of a target, subjecting the target to a grinding work of at least one of rotary grinding and polishing, and subjecting the target to a finishing work of at least one of etching and reverse sputtering.
摘要翻译：制造钨溅射靶的方法包括：将高纯度钨粉压制成压制成形体，首先在压制成型体在加热加热后，在1450-1700℃的温度下烧结1小时以上的压制成形体在最高烧结温度的途中为2-5℃/分钟，在1900℃以上的温度下烧结压制成型体以烧结体5小时以上，加工烧结体以获得目标的形状，对所述目标进行旋转研磨和抛光中的至少一个的研磨加工，以及对所述靶进行蚀刻和反向溅射中的至少一种的精加工。

6. 发明授权

US6165607A Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using the same 失效
标题翻译：溅射靶和反铁磁膜和使用其形成的磁阻效应元件
公开(公告)号：US6165607A
公开(公告)日：2000-12-26
申请号：US101455
申请日：1998-07-17
申请人： Takashi Yamanobe , Naomi Fujioka , Takashi Ishigami , Nobuo Katsui , Hiromi Fuke , Kazuhiro Saito , Hitoshi Iwasaki , Masashi Sahashi , Takashi Watanabe
发明人： Takashi Yamanobe , Naomi Fujioka , Takashi Ishigami , Nobuo Katsui , Hiromi Fuke , Kazuhiro Saito , Hitoshi Iwasaki , Masashi Sahashi , Takashi Watanabe
IPC分类号： C23C14/06 , C23C14/14 , C23C14/34 , G11B5/39 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/12 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C23C14/14 , C23C14/3414 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3218 , H01F10/3268 , H01F41/183 , H01F41/302 , H01L43/12 , Y10S428/90 , Y10T428/1121 , Y10T428/26 , Y10T428/265
摘要： A sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target, at least as a part of target texture, comprises one member selected from a group of an alloy phase and a compound phase formed between the R element and Mn. In addition, oxygen content in the target is 1 weight % or less (including 0). With such a sputtering target, an anti-ferromagnetic material film consisting of RMn alloy excellent in corrosion resistivity and thermal performance can be stabilized in its film composition and film quality. By employing the anti-ferromagnetic material film, when an exchange coupling film is formed by stacking the anti-ferromagnetic material film and the ferromagnetic material film, sufficient exchange coupling force is obtained stably. Such an exchange coupling film can be used in a magneto-resistance effect element and the like.
摘要翻译： PCT No.PCT / JP97 / 04232 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年11月20日PCT公布。公开号WO98 / 22636 日期1998年5月28日一种主要由Mn和选自Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru中的至少一种R元素组成的溅射靶， Os，Cr，Mo，W和Re。至少作为目标结构的一部分的溅射靶包括选自由R元素和Mn之间形成的合金相和化合物相的组中的一种。此外，靶中的氧含量为1重量％以下（包括0）。通过这样的溅射靶，可以在其膜组成和膜质量中稳定由耐腐蚀性和耐热性优异的RMn合金构成的反铁磁性材料膜。通过采用反铁磁材料膜，当通过堆叠反铁磁材料膜和铁磁材料膜形成交换耦合膜时，稳定地获得了充分的交换耦合力。这种交换耦合膜可用于磁阻效应元件等。

7. 发明申请

US20080245656A1 Sputtering Target and Process For Producing Si Oxide Film Therewith 有权
标题翻译：用于生产氧化硅膜的溅射靶和工艺
公开(公告)号：US20080245656A1
公开(公告)日：2008-10-09
申请号：US10573406
申请日：2004-09-22
申请人： Koichi Watanabe , Yukinobu Suzuki , Takashi Ishigami
发明人： Koichi Watanabe , Yukinobu Suzuki , Takashi Ishigami
IPC分类号： C23C14/34
CPC分类号： C23C14/10 , C23C14/3414
摘要： A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I(111)) to peak intensity of (220) face (I(220)) of Si, (I(111)/I(220)), falling within the range of 1.8±0.3. The Si sputtering target comprises, for example, an Si sintered material of 70 to 95% relative density. With respect to sputtering films such as Si oxide film, the film thickness characteristics, film formation cost, etc. can be improved by the use of this Si sputtering target.
摘要翻译：根据X射线衍射测定溅射表面的晶面取向的Si溅射靶，表现出（111）面（I（111））的峰强度与峰面强度的比值（220）表面（I（220）），（I（111）/ I（220）），落在范围内为1.8±0.3。 Si溅射靶包括例如相对密度为70-95％的Si烧结材料。对于诸如Si氧化膜的溅射膜，可以通过使用该Si溅射靶来提高膜厚特性，成膜成本等。

8. 发明授权

US07998324B2 Sputtering target and process for producing si oxide film therewith 有权
标题翻译：溅射靶材及其制造方法
公开(公告)号：US07998324B2
公开(公告)日：2011-08-16
申请号：US10573406
申请日：2004-09-22
申请人： Koichi Watanabe , Yukinobu Suzuki , Takashi Ishigami
发明人： Koichi Watanabe , Yukinobu Suzuki , Takashi Ishigami
IPC分类号： C23C14/14
CPC分类号： C23C14/10 , C23C14/3414
摘要： A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I(111)) to peak intensity of (220) face (I(220)) of Si, (I(111)/I(220)), falling within the range of 1.8±0.3. The Si sputtering target comprises, for example, an Si sintered material of 70 to 95% relative density. With respect to sputtering films such as Si oxide film, the film thickness characteristics, film formation cost, etc. can be improved by the use of this Si sputtering target.
摘要翻译：在根据X射线衍射法测量溅射表面的晶面取向的Si溅射靶表现出（111）面（I（111））的峰强度与（220）面（I（111））的峰强度之比 220）），（I（111）/ I（220）），在1.8±0.3的范围内。 Si溅射靶包括例如相对密度为70-95％的Si烧结材料。对于诸如Si氧化膜的溅射膜，可以通过使用该Si溅射靶来提高膜厚特性，成膜成本等。

9. 发明授权

US06736947B1 Sputtering target, A1 interconnection film, and electronic component 有权
标题翻译：溅射靶，A1互连膜和电子元件
公开(公告)号：US06736947B1
公开(公告)日：2004-05-18
申请号：US09582284
申请日：2000-06-23
申请人： Koichi Watanabe , Takashi Ishigami
发明人： Koichi Watanabe , Takashi Ishigami
IPC分类号： C23C1432
CPC分类号： C22C21/00 , C22F1/04 , C23C14/3414 , H01L21/2855 , H01L21/32051 , H01L21/76838 , H01L23/53219 , H01L2924/0002 , Y10T428/10 , H01L2924/00
摘要： A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.
摘要翻译：溅射靶基本上由0.1〜50重量％的与Al形成金属间化合物的至少一种元素，余量为Al。与Al形成金属间化合物的元素在目标结构中均匀分散，在EPMA分析的映射中，元素的检测灵敏度的数量为22以上的部分的面积比例小于60％测量面积为20x20 mum。根据这样的溅射靶，即使在采用溅射溅射或回流溅射等溅射法的情况下，也可以抑制巨大的尘埃或大的凹坑。

10. 再颁专利

USRE45481E1 Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same 有权
标题翻译：薄膜互连线，用于形成布线膜的溅射靶和使用其的电子部件
公开(公告)号：USRE45481E1
公开(公告)日：2015-04-21
申请号：US11386117
申请日：2006-03-22
申请人： Takashi Ishigami , Koichi Watanabe , Akihisa Nitta , Toshihiro Maki , Noriaki Yagi
发明人： Takashi Ishigami , Koichi Watanabe , Akihisa Nitta , Toshihiro Maki , Noriaki Yagi
IPC分类号： H01L21/20 , C22C21/00
CPC分类号： C22C21/00
摘要： An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.
摘要翻译：包含0.001〜30原子％的至少一种能够构成铝的金属间化合物和/或具有比铝更高的标准电极电位的第一元素的互连线，例如至少一种选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb，Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re， Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au，Cd，Si，Pb和B; 和一种选自C，O，N和H的第二元素，其比例为0.01〜100原子％的比例，余量基本上为Al。除了具有低电阻之外，这种薄膜的Al互连线可以防止发生小丘和与ITO电极的电化学反应。可以通过使用具有相似组成的溅射靶以无尘的方式溅射来获得薄膜的互连线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式