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1. 再颁专利

USRE41975E1 Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same 失效
标题翻译：薄膜互连线，用于形成布线膜的溅射靶和使用其的电子部件
公开(公告)号：USRE41975E1
公开(公告)日：2010-11-30
申请号：US10732888
申请日：1996-10-14
申请人： Takashi Ishigami , Koichi Watanabe , Akihisa Nitta , Toshihiro Maki , Noriaki Yagi
发明人： Takashi Ishigami , Koichi Watanabe , Akihisa Nitta , Toshihiro Maki , Noriaki Yagi
IPC分类号： H01L21/20
CPC分类号： H01L21/32051 , C22C21/00 , C23C14/14 , C23C14/165 , C23C14/3414 , G02F2001/136295 , H01L21/2855 , H01L23/53214 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/16152 , H01L2924/181 , H03H9/14538 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.
摘要翻译：包含0.001〜30原子％的至少一种能够构成铝的金属间化合物和/或具有比铝更高的标准电极电位的第一元素的互连线，例如至少一种选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb，Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re， Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au，Cd，Si，Pb和B; 和一种选自C，O，N和H的第二元素，其比例为0.01〜100原子％的比例，余量基本上为Al。除了具有低电阻之外，这种薄膜的Al互连线可以防止发生小丘和与ITO电极的电化学反应。可以通过使用具有相似组成的溅射靶以无尘的方式溅射来获得薄膜的互连线。

2. 发明申请

US20050037677A1 Method and structure for connecting a terminal with a wire 有权
标题翻译：将端子与电线连接的方法和结构
公开(公告)号：US20050037677A1
公开(公告)日：2005-02-17
申请号：US10944875
申请日：2004-09-21
申请人： Yasumichi Kuwayama , Toshihiro Maki , Masanori Onuma , Nobuyuki Asakura
发明人： Yasumichi Kuwayama , Toshihiro Maki , Masanori Onuma , Nobuyuki Asakura
IPC分类号： H01R4/18 , H01R11/28 , H01R43/058 , H01R4/10
CPC分类号： H01R43/0585 , H01R4/188 , H01R11/28 , Y10T29/49174 , Y10T29/49183 , Y10T29/49185 , Y10T29/49199
摘要： In a method of connecting a terminal with a wire in which a core (2) of a wire is inserted into a tubular wire connecting portion (1) of a terminal, and the wire connecting portion is crimped in a radial direction of the wire, the wire connecting portion is compressed in a radial direction of the wire and uniformly over the whole circumference. While rotating dies (7′) by using a rotary swaging machine, the wire connecting portion is compressed by the dies in a radial direction of the wire and uniformly over the whole circumference. The wire connecting portion is compressed in a radial direction of the wire and uniformly over the whole circumference, and the outer periphery of a compressed part of the wire connecting portion has a true circular section shape.
摘要翻译：在将端子与电线的芯线（2）连接在端子的管状电线连接部（1）中并且电线连接部沿导线的径向方向压接的方法中，电线连接部在电线的径向方向上被压缩，并且在整个圆周上均匀地压缩。通过使用旋转模锻机旋转模具（7'），线材连接部分被模具沿导线的径向方向压缩，并且在整个圆周上均匀地压缩。电线连接部在电线的径向上被压缩，并且在整个圆周上均匀地压缩，并且电线连接部的压缩部的外周具有真正的圆形截面形状。

3. 发明授权

US6113441A Metal terminal and wire connector 失效
标题翻译：金属端子和电线连接器
公开(公告)号：US6113441A
公开(公告)日：2000-09-05
申请号：US148188
申请日：1998-09-04
申请人： Yoshihiro Fukase , Toshihiro Maki
发明人： Yoshihiro Fukase , Toshihiro Maki
IPC分类号： G01M99/00 , H01R4/18 , H01R43/00 , H01R43/048 , H01R4/10
CPC分类号： H01R43/0486 , Y10T29/49174 , Y10T29/49181 , Y10T29/49185 , Y10T29/49192 , Y10T29/53209 , Y10T29/53226 , Y10T29/53235
摘要： A method of determining whether a metal terminal including a conductor clamping section for clamping a wire thereto is satisfactorily connected to the wire or not, the method includes steps of: providing a first metal terminal including a first conductor clamping section for clamping a first wire thereto; calculating one of dimensional variation and a rate of a dimensional change of the first conductor clamping section in an axial direction of the first metal terminal are caused before and after clamping the first conductor clamping section; and preparing compressibility comparison data by calculating, from a section of the first conductor clamping section after clamping the first conductor clamping section, compressibility of the first wire with respect to the first conductor clamping section based on the one of the dimensional variation and the rate of the dimensional change. In the method, after preparing the compressibility comparison data, a second metal terminal including a second conductor clamping section for clamping a second wire is provided, and one of dimensional variation and a rate of a dimensional change in distance between marks applied along formation reference positions on the second conductor clamping section is calculated and is compared with the compressibility comparison data, thereby determining whether or not the second metal terminal is satisfactorily connected to the second wire. Furthermore, each width of the marks is made equal to range of dimensional tolerance of each of the bellmouths in the formation thereof. Therefore, whether state of the formation of bellmouths is acceptable or not can be determined by detecting positions of base end portions of the bellmouths.
摘要翻译：一种确定包括用于夹紧导线的导体夹紧部分的金属端子是否令人满意地连接到导线的方法，所述方法包括以下步骤：提供包括第一金属端子，第一金属端子包括用于将第一导线夹紧到其上的第一导体夹紧部分 ; 在夹持第一导体夹紧部之前和之后，计算第一导体夹持部在第一金属端子的轴向上的尺寸变化和尺寸变化率之一; 以及通过根据所述第一导体夹持部的所述第一导体夹持部的所述尺寸变化和所述第一导体夹持部的所述第一导体夹持部的所述第一导体夹持部尺寸变化。在该方法中，在准备压缩率比较数据之后，提供包括用于夹紧第二线的第二导体夹持部的第二金属端子，并且沿着沿着地面基准位置施加的标记之间的距离的尺寸变化和尺寸变化率计算第二导体夹紧部分并与压缩率比较数据进行比较，从而确定第二金属端子是否令人满意地连接到第二导线。此外，使标记的每个宽度等于其形成中每个喇叭口的尺寸公差的范围。因此，可以通过检测喇叭口的基端部的位置来确定形成喇叭口的状态是否可接受。

4. 发明授权

US5913100A Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film 失效
标题翻译：用于形成布线的Mo-W材料，Mo-W靶及其制造方法，以及Mo-W布线薄膜
公开(公告)号：US5913100A
公开(公告)日：1999-06-15
申请号：US663251
申请日：1996-09-06
申请人： Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
发明人： Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
IPC分类号： B22F1/00 , C22C27/04 , C23C14/34 , G02F1/1362 , H01L21/02 , H01L21/768 , H01L23/532 , B22F3/00
CPC分类号： H01L28/60 , B22F1/0003 , C22C27/04 , C23C14/3414 , G02F1/136286 , H01L21/76838 , H01L23/53257 , G02F2001/136295 , H01L2924/0002 , Y10T428/12014 , Y10T428/12826 , Y10T428/1284 , Y10T428/2951
摘要： A Mo-W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo-W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo-W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo-W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo-W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo-W wiring thin film to be produced with high repeatability.
摘要翻译： PCT No.PCT / JP94 / 02095 Sec。 371日期1996年9月6日 102（e）1996年9月6日PCT PCT 1994年12月14日PCT公布。公开号WO95 / 16797 日期：1995年6月22日公开了用于形成配线的Mo-W材料，其整体观察包含20至95％的钨，余量为钼和不可避免的杂质的原子百分数。用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品以上。含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

5. 发明授权

US5458697A Highly purified metal material and sputtering target using the same 失效
标题翻译：高纯金属材料和使用其的溅射靶
公开(公告)号：US5458697A
公开(公告)日：1995-10-17
申请号：US351542
申请日：1994-12-07
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L21/477
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
摘要翻译：这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。高纯度金属的Al含量不大于10ppm。氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

6. 发明授权

US06893301B2 Method and structure for connecting a terminal with a wire 有权
公开(公告)号：US06893301B2
公开(公告)日：2005-05-17
申请号：US10650725
申请日：2003-08-29
申请人： Yasumichi Kuwayama , Toshihiro Maki , Masanori Onuma , Nobuyuki Asakura
发明人： Yasumichi Kuwayama , Toshihiro Maki , Masanori Onuma , Nobuyuki Asakura
IPC分类号： H01R4/18 , H01R11/28 , H01R43/058 , H01R4/10
CPC分类号： H01R43/0585 , H01R4/188 , H01R11/28 , Y10T29/49174 , Y10T29/49183 , Y10T29/49185 , Y10T29/49199
摘要： In a method of connecting a terminal with a wire in which a core (2) of a wire is inserted into a tubular wire connecting portion (1) of a terminal, and the wire connecting portion is crimped in a radial direction of the wire, the wire connecting portion is compressed in a radial direction of the wire and uniformly over the whole circumference. While rotating dies (7′) by using a rotary swaging machine, the wire connecting portion is compressed by the dies in a radial direction of the wire and uniformly over the whole circumference. The wire connecting portion is compressed in a radial direction of the wire and uniformly over the whole circumference, and the outer periphery of a compressed part of the wire connecting portion has a true circular section shape.

7. 发明授权

US06626711B2 Press-clamping terminal and method of examining press-clamped condition thereof 有权
标题翻译：压夹端子及其压紧状态的检查方法
公开(公告)号：US06626711B2
公开(公告)日：2003-09-30
申请号：US09876147
申请日：2001-06-08
申请人： Hironori Kitagawa , Naoki Ito , Tsutomu Takayama , Toshihiro Maki
发明人： Hironori Kitagawa , Naoki Ito , Tsutomu Takayama , Toshihiro Maki
IPC分类号： H01R410
CPC分类号： H01R9/2683 , H01R4/184 , H01R4/188 , H01R4/206
摘要： To provide a press-clamping terminal in which a press-clamped condition can be easily examined, an examination mark (14), which can be deformed upon press-deforming of a barrel (11), is impressed on or stamped in an outer surface of a bottom portion (12) of a press-clamping terminal (10). (See FIG. 8.) To provide a press-clamping terminal in which an examination can be easily carried out with the need for using a bulky apparatus and tools, grooves (160), serving as a criterion for confirming a press-clamped condition, are impressed on or stamped in an outer surface of a bottom portion (120) of a barrel (110). Also, a mark (170), indicating a press-clamping position, is formed or impressed in this outer surface. (See FIG. 24.)
摘要翻译：为了提供一种可以容易地检查压力夹紧状态的压合夹紧端子，可以在筒体（11）的压缩变形时变形的检查标记（14）被压印在或压在外表面的夹紧端子（10）的底部（12）。（参见图8）为了提供一种能够容易地进行检查的压紧夹紧端子，其中需要使用体积大的装置和工具，作为用于确认压制条件的标准的槽（160）印在或冲压在桶（110）的底部（120）的外表面上。此外，在该外表面上形成或印刷表示压合夹持位置的标记（170）。（参见图24）

8. 发明授权

US06329275B1 Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same 失效
标题翻译：薄膜互连线，用于形成布线膜的溅射靶和使用其的电子部件
公开(公告)号：US06329275B1
公开(公告)日：2001-12-11
申请号：US09051567
申请日：1998-04-10
申请人： Takashi Ishigami , Koichi Watanabe , Akihisa Nitta , Toshihiro Maki , Noriaki Yagi
发明人： Takashi Ishigami , Koichi Watanabe , Akihisa Nitta , Toshihiro Maki , Noriaki Yagi
IPC分类号： H01L2120
CPC分类号： H01L21/32051 , C22C21/00 , C23C14/14 , C23C14/165 , C23C14/3414 , G02F2001/136295 , H01L21/2855 , H01L23/53214 , H01L23/53219 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/16152 , H01L2924/181 , H03H9/14538 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.
摘要翻译：包含0.001〜30原子％的至少一种能够构成铝的金属间化合物和/或具有比铝更高的标准电极电位的第一元素的互连线，例如至少一种选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb，Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re， Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au，Cd，Si，Pb和B; 和一种选自C，O，N和H的第二元素，其比例为0.01〜100原子％的比例，余量基本上为Al。除了具有低电阻之外，这种薄膜的Al互连线可以防止发生小丘和与ITO电极的电化学反应。可以通过使用具有相似组成的溅射靶以无尘的方式溅射来获得薄膜的互连线。

9. 发明授权

US06200694B1 Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film 有权
标题翻译：用于形成布线的Mo-W材料，Mo-W靶及其制造方法，以及Mo-W布线薄膜
公开(公告)号：US06200694B1
公开(公告)日：2001-03-13
申请号：US09203678
申请日：1998-12-01
申请人： Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
发明人： Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
IPC分类号： H01L2978
CPC分类号： H01L28/60 , B22F1/0003 , C22C27/04 , C23C14/3414 , G02F1/136286 , G02F2001/136295 , H01L21/76838 , H01L23/53257 , H01L2924/0002 , Y10T428/12014 , Y10T428/12826 , Y10T428/1284 , Y10T428/2951 , H01L2924/00
摘要： A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo—W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo—W wiring thin film to be produced with high repeatability.
摘要翻译：公开了用于形成布线的Mo-W材料，其一体地观察到包含20-95％的钨，余量为钼和不可避免的杂质的原子百分数。用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品以上。含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

10. 发明授权

US5679983A Highly purified metal material and sputtering target using the same 失效
标题翻译：高纯金属材料和使用其的溅射靶
公开(公告)号：US5679983A
公开(公告)日：1997-10-21
申请号：US454583
申请日：1995-05-31
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
摘要翻译：这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。高纯度金属的Al含量不大于10ppm。氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

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