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    • 7. 发明申请
    • Tungsten sputtering target and method of manufacturing the target
    • 钨溅射靶和制造目标的方法
    • US20050029094A1
    • 2005-02-10
    • US10363257
    • 2001-09-03
    • Koichi WatanabeYoichiro YabeTakashi IshigamiTakashi WatanabeHitoshi AoyamaYasuo KohsakaYukinobu Suzuki
    • Koichi WatanabeYoichiro YabeTakashi IshigamiTakashi WatanabeHitoshi AoyamaYasuo KohsakaYukinobu Suzuki
    • C23C14/34C23C14/00
    • C23C14/3414
    • The tungsten sputtering target of the present invention is characterized in that a half band width of a peak corresponding to a crystal plane (110) of the target is 0.35 or less when a surface of the target to be sputtered is analyzed by X-ray diffraction. Further, the method of manufacturing the tungsten sputtering target of the present invention is characterized by comprising the steps of: pressing a high purity tungsten powder to form a pressed compact; sintering the pressed compact to form a sintered body; working the sintered body to obtain a shape of a target; subjecting the target to a grinding work of at least one of rotary grinding and polishing; and subjecting the target to a finishing work of at least one of etching and reverse sputtering. According to the above structure, there can be provided a tungsten sputtering target and method of manufacturing the target capable of improving the in-plain uniformity in thickness of the W thin film formed on a substrate, and capable of effectively reducing the generation of the particles.
    • 本发明的钨溅射靶的特征在于,当通过X射线衍射分析待溅射靶的表面时,对应于靶的晶面(110)的峰的半带宽为0.35以下 。 此外,本发明的钨溅射靶的制造方法的特征在于包括以下步骤:将高纯度钨粉按压以形成压制成型体; 烧结压制成型体的烧结体; 加工烧结体以获得靶的形状; 使目标进行旋转研磨和抛光中的至少一个的研磨工作; 并对靶进行蚀刻和反溅镀中的至少一种的精加工。 根据上述结构,可以提供一种钨溅射靶和能够提高形成在基板上的W薄膜的厚度均匀性均匀化的靶的方法,能够有效地减少粒子的产生 。