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1. 发明授权

US5289721A Semiconductor pressure sensor 失效
标题翻译：半导体压力传感器
公开(公告)号：US5289721A
公开(公告)日：1994-03-01
申请号：US756223
申请日：1991-09-09
申请人： Yukihiko Tanizawa , Hiroshi Okada , Kazuhisa Ikeda , Tsuyoshi Fukada
发明人： Yukihiko Tanizawa , Hiroshi Okada , Kazuhisa Ikeda , Tsuyoshi Fukada
IPC分类号： G01L9/00 , G01L7/08 , G01L9/06
CPC分类号： G01L9/0042 , G01L9/0054 , Y10T29/49103
摘要： A semiconductor pressure sensor comprises a silicon substrate having a surface orientation of substantially (110), a diaphragm formed from the substrate, strain gauges disposed on the diaphragm, and a base joined with the substrate. The diaphragm has an octagonal shape whose sides are orthogonal to axis , , and , respectively. This sensor causes substantially no output error and no fluctuation between output characteristics of the strain gauges irrespective of a change in temperature.
摘要翻译：半导体压力传感器包括具有基本上（110）的表面取向的硅衬底，由衬底形成的隔膜，设置在隔膜上的应变计和与衬底接合的基底。隔膜具有八边形，其侧面分别与轴线<100>，<110>和<111>正交。该传感器基本上不产生输出误差，并且不管温度变化如何，都不会产生应变计的输出特性之间的波动。

2. 发明授权

US06194236B1 Electrochemical etching method for silicon substrate having PN junction 有权
标题翻译：具有PN结的硅衬底的电化学蚀刻方法
公开(公告)号：US06194236B1
公开(公告)日：2001-02-27
申请号：US09247908
申请日：1999-02-11
申请人： Minekazu Sakai , Tsuyoshi Fukada , Yukihiko Tanizawa , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Yukihiko Tanizawa , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： H01L2166
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

3. 发明授权

US5949118A Etching method for silicon substrates and semiconductor sensor 失效
标题翻译：硅衬底和半导体传感器的蚀刻方法
公开(公告)号：US5949118A
公开(公告)日：1999-09-07
申请号：US637128
申请日：1996-04-24
申请人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： G01L9/00 , H01L29/84 , H01L29/82
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

4. 发明授权

US4838089A Semiconductor pressure sensor 失效
标题翻译：半导体压力传感器
公开(公告)号：US4838089A
公开(公告)日：1989-06-13
申请号：US46582
申请日：1987-05-06
申请人： Hiroshi Okada , Yukihiro Kato , Osamu Ina , Kazuhisa Ikeda
发明人： Hiroshi Okada , Yukihiro Kato , Osamu Ina , Kazuhisa Ikeda
IPC分类号： G01L9/04 , G01L9/00 , G01L19/14 , H01L29/84
CPC分类号： G01L19/148 , G01L19/0038 , G01L19/0084 , G01L19/14 , G01L19/141 , H01L2224/48091 , H01L2224/48472 , H01L2224/49171 , H01L2924/3025
摘要： The semiconductor pressure sensor embodying the present invention comprises a housing. A sensor board is located in this housing. A pressure-sensing chip, which is formed of a semiconductor and capable of measuring the pressure of a pressure medium, is mounted on the sensor board. Another semiconductor chip, which operates in cooperation with the pressure-sensing chip, is also mounted on the sensor board. A shielding member is located in the housing. This shielding member encloses the pressure-sensing chip in such a manner that the pressure-sensing chip is isolated from the semiconductor chip, and defines a storage chamber which is airtight from the other regions in the housing and adapted to store the pressure-sensing chip. The interior of the housing, except for the storage chamber, is filled with filler, so as to protect the semiconductor chip.
摘要翻译：体现本发明的半导体压力传感器包括壳体。传感器板位于该壳体中。由传感器板安装由半导体形成并能够测量压力介质的压力的压力感测芯片。与传感芯片配合工作的另一半导体芯片也安装在传感器板上。屏蔽构件位于壳体中。该屏蔽构件以这样的方式包围压力感测芯片，使得压力感测芯片与半导体芯片隔离，并且限定了从壳体中的其它区域气密地存储并适于存储压力感测芯片的存储室。除了储存室之外，壳体的内部填充有填料，以保护半导体芯片。

5. 发明授权

US08476894B2 Monitoring circuit, method for outputting monitor signal, and optical receiver 有权
标题翻译：监控电路，监控信号输出方法，光接收机
公开(公告)号：US08476894B2
公开(公告)日：2013-07-02
申请号：US12801051
申请日：2010-05-19
申请人： Hiroshi Okada
发明人： Hiroshi Okada
IPC分类号： G01R31/00
CPC分类号： G01R19/0092
摘要： A monitoring circuit of the present invention provides a monitor signal with which a magnitude of a current flowing across a photodetector, such as a photodiode, can be calculated accurately over a wide temperature range on the basis of a value of the monitor signal. The monitoring circuit of the present invention includes: a current mirror circuit for outputting a monitor current proportional to an input current, the current mirror circuit having an input point for receiving the input current, the input point being connected to a photodetector and a load resistor, which are connected thereto in parallel; and an output circuit for outputting a monitor signal indicating a difference between a monitor electric potential proportional to the monitor current, and an offset electric potential proportional to an offset current which flows across the load resistor concurrently with the monitor current.
摘要翻译：本发明的监视电路提供一种监视信号，通过该监视信号，可以根据监视信号的值，在宽的温度范围内精确地计算流过光电探测器（例如光电二极管）的电流大小。本发明的监视电路包括：电流镜电路，用于输出与输入电流成比例的监视电流，电流镜电路具有用于接收输入电流的输入点，输入点连接到光电检测器和负载电阻器，其并联连接; 以及输出电路，用于输出指示与监视电流成比例的监视电位之间的差异的监视信号和与监视电流同时流过负载电阻的偏移电流成比例的偏移电位。

6. 发明授权

US08367033B2 Fullerene-based material and process for producing fullerene-based material 有权
标题翻译：富勒烯材料和富勒烯类材料的制造方法
公开(公告)号：US08367033B2
公开(公告)日：2013-02-05
申请号：US12297728
申请日：2007-04-20
申请人： Hiroshi Okada , Yoshinori Sibata , Kuniyoshi Yokoo , Yuzo Mizobuchi , Kenji Omote , Yasuhiko Kasama
发明人： Hiroshi Okada , Yoshinori Sibata , Kuniyoshi Yokoo , Yuzo Mizobuchi , Kenji Omote , Yasuhiko Kasama
IPC分类号： C01B31/02
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15 , C01B32/152
摘要： In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.
摘要翻译：为了分离和纯化内生的富勒烯，使用甲苯进行溶剂洗涤，以将内嵌的富勒烯浓缩在残留物中，但是由于内部富勒烯以外的杂质不能被充分除去，因此不能有效地纯化内生的富勒烯。因此，内嵌式富勒烯通过使用对内嵌式富勒烯具有高溶解度的溶剂如氯萘或四氢化萘并将内面富勒烯浓缩在溶剂中来分离和纯化。通过溶剂萃取分离和纯化的内嵌富勒烯具有簇结构，其中内部富勒烯被空的富勒烯包围。因此，该内嵌式富勒烯是高度稳定的，并且是适用于医疗和电子等各个领域的有用材料。

7. 发明授权

US08058642B2 Light-receiving device 有权
标题翻译：光接收装置
公开(公告)号：US08058642B2
公开(公告)日：2011-11-15
申请号：US12443575
申请日：2008-07-18
申请人： Yasuhiro Iguchi , Hiroshi Okada , Yuichi Kawamura
发明人： Yasuhiro Iguchi , Hiroshi Okada , Yuichi Kawamura
IPC分类号： H01L31/0352
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/14649 , H01L31/03046 , Y02E10/544
摘要： A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.
摘要翻译：提供能够接收1.7μm〜3.5μm的近红外到中红外光的受光元件装置。基板由InP形成，超晶格光接收层由通过交替堆叠包括In，Ga，As，N的III-V族化合物半导体的下降层形成的2型结的超晶格形成，并且包含Ga，As，Sb的III-V族化合物半导体的上升层。下降层和上升层的膜厚分别为3nm〜10nm。超晶格光接收层的整个厚度为2μm-7μm。超晶格光接收层的构成膜与InP的晶格失配为±0.2％以下。

8. 发明授权

US08008948B2 Peak voltage detector circuit and binarizing circuit including the same circuit 有权
标题翻译：峰值电压检测电路和二值化电路包括相同电路
公开(公告)号：US08008948B2
公开(公告)日：2011-08-30
申请号：US12000304
申请日：2007-12-11
申请人： Yasuaki Makino , Hiroshi Okada , Reiji Iwamoto , Nobukazu Oba , Shinji Nakatani , Norikazu Ohta , Hideki Hosokawa
发明人： Yasuaki Makino , Hiroshi Okada , Reiji Iwamoto , Nobukazu Oba , Shinji Nakatani , Norikazu Ohta , Hideki Hosokawa
IPC分类号： G01R19/00 , G06M1/10
CPC分类号： G01R19/04
摘要： A peak voltage detector circuit detects a peak voltage of an input voltage. The input voltage is input into a first input terminal of a comparator. A counter circuit counts up a counter value in synchronization with a first clock signal, when a signal output from the comparator is in a first state. The counter circuit counts down the counter value in synchronization with a second clock signal. A digital-analog conversion circuit outputs an output voltage corresponding to the counter value, and the output voltage is input into a second input terminal of the comparator. The first clock signal has a wave period shorter than that of the second clock signal.
摘要翻译：峰值电压检测电路检测输入电压的峰值电压。输入电压被输入到比较器的第一输入端。当从比较器输出的信号处于第一状态时，计数器电路与第一时钟信号同步地计数计数器值。计数器电路与第二个时钟信号同步地计数计数器值。数字模拟转换电路输出对应于计数器值的输出电压，输出电压被输入到比较器的第二输入端。第一时钟信号具有比第二时钟信号短的波周期。

9. 发明申请

US20110037893A1 Imaging Module 有权
标题翻译：成像模块
公开(公告)号：US20110037893A1
公开(公告)日：2011-02-17
申请号：US12988493
申请日：2009-04-10
申请人： Hiroshi Okada
发明人： Hiroshi Okada
IPC分类号： H04N5/225
CPC分类号： H04N5/2252 , G02B7/021 , G02B13/001 , G03B17/02 , H04N5/2257
摘要： An imaging module includes an imaging substrate mounting an imaging device thereon, a resin holder including a substrate securing portion to which the imaging substrate is secured, a lens support barrel supporting a lens at an inside thereof, and a holding portion which protrudes toward a subject from the substrate securing portion and includes a through hole configured to permit retention of the holder in an external structure, a metal securing member disposed at a side of the substrate securing portion of the holder facing a subject, and a metal holding plate including a securing region which is secured to and electrically connected to the securing member, and a holding portion adjacent region which overlaps a part around the through hole of the holding portion and includes a through hole configured to communicate with the through hole.
摘要翻译：成像模块包括在其上安装成像装置的成像基板，包括固定有成像基板的基板固定部分的树脂保持器，在其内侧支撑透镜的透镜支撑筒以及向主体突出的保持部并且包括通孔，该通孔被配置为允许保持器保持在外部结构中;金属固定构件，其设置在所述保持器的面向被检体的基板固定部分的一侧;金属保持板，其包括固定固定到电连接到固定构件的区域和与保持部分的通孔周围的部分重叠的保持部分相邻区域，并且包括与通孔相连通的通孔。

10. 发明申请

US20100322286A1 QUICK-RESPONSE THERMOCOUPLE FOR HIGH-SPEED FLUID 审中-公开
标题翻译：用于高速流体的快速热电偶
公开(公告)号：US20100322286A1
公开(公告)日：2010-12-23
申请号：US12666105
申请日：2008-10-24
申请人： Kozo Toyama , Mitsuaki Mochizuki , Hiroshi Okada , Shinichi Fukushima , Junichi Sano
发明人： Kozo Toyama , Mitsuaki Mochizuki , Hiroshi Okada , Shinichi Fukushima , Junichi Sano
IPC分类号： G01K7/02
CPC分类号： G01K13/02 , G01K1/08 , G01K1/18 , G01K7/02
摘要： An object of the invention is to provide a thermocouple having a high response speed without receiving mechanical damages such as bending and curving even when it is used in a high-speed fluid. The invention provides a quick-response thermocouple for high-speed fluid in which a sheathed thermocouple having a small outer diameter that is formed by housing, in a metal sheath, a positive-side thermocouple filament and a negative-side thermocouple filament embedded within a powder of an inorganic insulating material, and by forming a temperature sensing point at a tip portion thereof by bonding the tips of the positive-side thermocouple filament and the negative-side thermocouple filament together at the tip portion thereof, is inserted in a protective tube having a large outer diameter so that the tip portion is exposed, in which a portion of the sheathed thermocouple that is exposed from the protective tube is inserted in a protective cylinder having a bottom cover with a hole on a tip side through which the sheathed thermocouple is inserted and having a plurality of through windows, the tip of the sheathed thermocouple is slightly exposed from the bottom cover of the protective cylinder, and the bottom cover of the protective cylinder and the sheathed thermocouple as well as the protective cylinder and a lower portion of the protective tube are welded.
摘要翻译：本发明的目的是提供一种具有高响应速度的热电偶，即使在高速流体中使用时也不会受到弯曲和弯曲等机械损伤。本发明提供了一种用于高速流体的快速响应热电偶，其中具有小外径的铠装热电偶通过在金属外壳中容纳正嵌入的热电偶丝和负侧热电偶丝而形成无机绝缘材料的粉末，并且通过在顶端部分处将正侧热电偶丝和负侧热电偶丝的末端接合在一起的顶端处形成温度感测点，插入保护管中具有大的外径，使得尖端部分露出，其中从保护管暴露的一部分铠装热电偶被插入到具有底盖的保护筒中，该保护筒具有在顶端侧的孔，护套热电偶插入并具有多个通孔，该护套热电偶的尖端稍微暴露于保护层的底盖 e气缸，保护筒的底盖和护套热电偶以及保护筒和保护管的下部焊接。

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