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    • 4. 发明授权
    • Multilevel interconnection forming method for forming a semiconductor
device
    • 用于形成半导体器件的多层互连形成方法
    • US6066558A
    • 2000-05-23
    • US796695
    • 1997-03-04
    • Yumiko KawanoShigetoshi HosakaYuichi WadaHiroshi KobayashiTetsuya Yano
    • Yumiko KawanoShigetoshi HosakaYuichi WadaHiroshi KobayashiTetsuya Yano
    • H01L21/285H01L21/768H01L21/4763
    • H01L21/7685H01L21/2855H01L21/76847H01L21/76879H01L21/76882
    • The multilevel interconnection forming method of the present invention comprises the following. A metal film containing aluminum is deposited on an insulating film of a substrate, and the metal film is patterned, to form a wiring layer of a first layer. An interlayer dielectric film forming part of the first layer is formed on an entire surface of the substrate, such that the interlayer dielectric film covers the wiring layer from upside. A hole is formed at a predetermined position of the interlayer dielectric film such that the hole reaches the wiring layer of the first layer. Aluminum is selectively deposited and filled into the hole by a CVD method, such that the aluminum is filled at a volume ratio smaller than 100% with respect to the hole. An active metal film is formed on an entire upper surface of an interlayer dielectric film including the hole filled with the aluminum. A metal layer containing aluminum is formed on the active metal film. The metal layer is made to flow into the hole by reflowing, to completely fill the hole and to planarize the surface of the metal layer. The metal layer is subjected to be patterned, to form a wiring layer of a second layer, after the surface of the metal layer is planarized by the reflowing.
    • 本发明的多层互连形成方法包括以下。 在基板的绝缘膜上沉积含有铝的金属膜,对金属膜进行图案化,形成第一层的布线层。 形成第一层的一部分的层间电介质膜形成在基板的整个表面上,使得层间电介质膜从上方覆盖布线层。 在层间电介质膜的预定位置形成孔,使得孔到达第一层的布线层。 选择性地沉积铝并通过CVD法填充到孔中,使得以相对于孔相对于小于100%的体积比填充铝。 在包括填充有铝的孔的层间绝缘膜的整个上表面上形成活性金属膜。 在活性金属膜上形成含有铝的金属层。 通过回流使金属层流入孔中,以完全填充孔并使金属层的表面平坦化。 在通过回流使金属层的表面平坦化之后,对金属层进行图案化,形成第二层的布线层。
    • 5. 发明申请
    • EMBEDDED WAVEGUIDE DETECTORS
    • 嵌入式波形检测器
    • US20090269878A1
    • 2009-10-29
    • US12420558
    • 2009-04-08
    • Francisco A. LeonLawrence C. WestYuichi WadaGregory L. WojcikStephen Moffatt
    • Francisco A. LeonLawrence C. WestYuichi WadaGregory L. WojcikStephen Moffatt
    • H01L21/20
    • G02B6/12004G02B2006/12061H01L31/0232H01L31/0288H01L31/105H01L31/1812Y02E10/50
    • A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
    • 一种制造检测器的方法,包括:在衬底中形成沟槽,所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中,所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层,第二层和第三层的部分,以产生上部基本平坦的表面,并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。
    • 7. 发明授权
    • Film deposition method and apparatus
    • 薄膜沉积方法和装置
    • US06593252B1
    • 2003-07-15
    • US09830609
    • 2001-04-30
    • Yuichi WadaHiroyuki YaritaHisashi AidaNaomi Yoshida
    • Yuichi WadaHiroyuki YaritaHisashi AidaNaomi Yoshida
    • H01L21469
    • H01L21/6715C23C18/08
    • The present invention is characterized by comprising a supply means (28) for supplying an organometallic fluid, which has an organic metal as a main component and which precipitates film deposition material using a pyrolytic decomposition reaction; an application means (126) for applying the organometallic fluid that is supplied by said supply means onto a to-be-processed body; and a heating means (52) for heating to a predetermined temperature the to-be-processed body to which is applied the organometallic fluid by said application means; wherein said application means (126) is characterized by being outfitted with an application fluid containing body (100), which is capable of containing said organometallic fluid and capable of coming into contact with and separation from said to-be-processed body.
    • 本发明的特征在于包括用于供应有机金属液体的供给装置(28),所述有机金属液体以有机金属为主要成分,并使用热分解反应沉淀成膜材料; 用于将由所述供给装置供应的有机金属液体施加到待处理体上的施加装置(126) 以及加热装置(52),用于将由所述施加装置施加有机金属液体的待处理体加热到预定温度; 其特征在于,所述施加装置(126)的特征在于,其配备有能够容纳所述有机金属液体并且能够与所述待处理体接触并与其分离的涂布液体(100)。
    • 8. 发明授权
    • Switch
    • 开关
    • US4642429A
    • 1987-02-10
    • US629833
    • 1984-07-02
    • Teijiro MoriYuichi WadaYuji SakoHiroaki TazawaHiroyuki Okado
    • Teijiro MoriYuichi WadaYuji SakoHiroaki TazawaHiroyuki Okado
    • H01H9/36H01H33/08
    • H01H9/36
    • A switch characterized by a stationary contact element joined to a stationary contact, a movable contact element joined to a movable contact in a facing relationship to said stationary contact element, a first metallic arc extinguishing plate formed of a U-shaped vertical wall and disposed with its open end facing toward a tip of said stationary contact and which surround said stationary contact element, and a second metallic arc extinguishing plate disposed in parallel to and at the remote side from said contact elements of said first metallic arc extinguishing plate, said first metallic arc extinguishing plates being disposed at predetermined gaps relative to said stationary contact.
    • PCT No.PCT / JP83 / 00397 Sec。 371日期1984年7月2日 102(e)日期1984年7月2日PCT提交1983年11月4日PCT公布。 出版物WO84 / 02033 日期:1984年5月24日。一种开关,其特征在于,固定接触元件与固定触头接合,以与所述固定触点元件相对的方式接合到可动触头的可动触头元件,由U形触头构成的第一金属灭弧板, 并且设置成其开口端朝向所述固定触点的尖端并且围绕所述固定触点元件;以及第二金属灭弧板,其与所述第一金属弧的所述接触元件平行且远离所述远离一侧设置 所述第一金属灭弧板相对于所述固定触点设置在预定的间隙。