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1. 发明申请

US20090269878A1 EMBEDDED WAVEGUIDE DETECTORS 审中-公开
标题翻译：嵌入式波形检测器
公开(公告)号：US20090269878A1
公开(公告)日：2009-10-29
申请号：US12420558
申请日：2009-04-08
申请人： Francisco A. Leon , Lawrence C. West , Yuichi Wada , Gregory L. Wojcik , Stephen Moffatt
发明人： Francisco A. Leon , Lawrence C. West , Yuichi Wada , Gregory L. Wojcik , Stephen Moffatt
IPC分类号： H01L21/20
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译：一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

2. 发明授权

US07075165B2 Embedded waveguide detectors 失效
标题翻译：嵌入式波导检测器
公开(公告)号：US07075165B2
公开(公告)日：2006-07-11
申请号：US10856750
申请日：2004-05-28
申请人： Francisco A. Leon , Lawrence C. West , Yuichi Wada , Gregory L. Wojcik , Stephen Moffatt
发明人： Francisco A. Leon , Lawrence C. West , Yuichi Wada , Gregory L. Wojcik , Stephen Moffatt
IPC分类号： H01L31/075
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译：一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

3. 发明授权

US07001788B2 Maskless fabrication of waveguide mirrors 失效
标题翻译：波导镜无掩模制造
公开(公告)号：US07001788B2
公开(公告)日：2006-02-21
申请号：US10858524
申请日：2004-05-28
申请人： Francisco A. Leon , Lawrence C. West , Gregory L. Wojcik , Yuichi Wada
发明人： Francisco A. Leon , Lawrence C. West , Gregory L. Wojcik , Yuichi Wada
IPC分类号： H01L21/00
CPC分类号： G02B6/12004 , G02B6/122 , G02B6/132 , G02B6/136 , G02B2006/121 , G02B2006/12104
摘要： A method of fabricating a waveguide mirror that involves etching a trench in a silicon substrate; depositing a film (e.g. silicon dioxide) over the surface of the silicon substrate and into the trench; ion etching the film to remove at least some of the deposited silicon dioxide and to leave a facet of film in inside corners of the trench; depositing a layer of SiGe over the substrate to fill up the trench; and planarizing the deposited SiGe to remove the SiGe from above the level of the trench.
摘要翻译：一种制造波导反射镜的方法，涉及蚀刻硅衬底中的沟槽; 在硅衬底的表面上沉积膜（例如二氧化硅）并进入沟槽; 离子蚀刻膜以去除沉积的二氧化硅中的至少一些并且在沟槽的内部角落留下膜的小面; 在衬底上沉积一层SiGe以填充沟槽; 并且平坦化沉积的SiGe以从沟槽的高度上方除去SiGe。

4. 发明授权

US07101725B2 Solution to thermal budget 失效
标题翻译：热预算解决方案
公开(公告)号：US07101725B2
公开(公告)日：2006-09-05
申请号：US10896754
申请日：2004-07-22
申请人： Yuichi Wada , Francisco A. Leon
发明人： Yuichi Wada , Francisco A. Leon
IPC分类号： H01L21/00
CPC分类号： G02B6/12004 , B82Y20/00 , C30B29/12 , C30B33/00 , G02B6/12 , G02B6/4214 , G02B6/43 , H01L21/84 , H01L27/1203 , H01L31/035254
摘要： A method of fabricating on optical detector, the method including providing a substrate that includes an optical waveguide formed therein and having a surface for fabricating microelectronic circuitry thereon; fabricating microelectronic circuitry on the substrate, the fabricating involving a plurality of sequential process phases; after a selected one of the plurality of sequential process phases has occurred and before the next process phase after the selected one of the plurality of process phases begins, fabricating an optical detector within the optical waveguide; and after fabricating the optical detector in the waveguide, completing the plurality of sequential process phases for fabricating the microelectronic circuitry.
摘要翻译：一种在光学检测器上制造的方法，所述方法包括提供包括其中形成的光波导并且具有用于在其上制造微电子电路的表面的衬底; 在衬底上制造微电子电路，该制造涉及多个连续的工艺阶段; 在所述多个顺序处理阶段中的所选择的一个已经发生并且在所述多个处理阶段中所选择的一个处理阶段开始之后的下一个处理阶段之前，在所述光波导内制造光学检测器; 并且在波导中制造光学检测器之后，完成用于制造微电子电路的多个顺序处理阶段。

5. 发明申请

US20050051767A1 Embedded waveguide detectors 失效
标题翻译：嵌入式波导检测器
公开(公告)号：US20050051767A1
公开(公告)日：2005-03-10
申请号：US10856750
申请日：2004-05-28
申请人： Francisco Leon , Lawrence West , Yuichi Wada , Gregory Wojcik , Stephen Moffatt
发明人： Francisco Leon , Lawrence West , Yuichi Wada , Gregory Wojcik , Stephen Moffatt
IPC分类号： G02B20060101 , G02B6/12 , H01L29/06 , H01L31/0232
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译：一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

6. 发明申请

US20070018270A1 Embedded waveguide detectors 审中-公开
标题翻译：嵌入式波导检测器
公开(公告)号：US20070018270A1
公开(公告)日：2007-01-25
申请号：US11484009
申请日：2006-07-10
申请人： Francisco Leon , Lawrence West , Yuichi Wada , Gregory Wojcik , Stephen Moffatt
发明人： Francisco Leon , Lawrence West , Yuichi Wada , Gregory Wojcik , Stephen Moffatt
IPC分类号： H01L31/00
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译：一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

7. 发明申请

US20060001261A1 Through-panel fixing device for piping member 失效
标题翻译：管道构件用面板固定装置
公开(公告)号：US20060001261A1
公开(公告)日：2006-01-05
申请号：US11168739
申请日：2005-06-28
申请人： Atsuo Miyajima , Masayuki Sasagawa , Yuichi Wada , Naomasa Kaneko , Toshikazu Ono
发明人： Atsuo Miyajima , Masayuki Sasagawa , Yuichi Wada , Naomasa Kaneko , Toshikazu Ono
IPC分类号： F16L27/00
CPC分类号： F16L5/10 , B60R16/0222 , F16L5/14
摘要： A piping member is mounted in a mounting hole of one panel by means of a first holder and in a mounting hole of the other panel by means of a second holder, respectively. Each of the first and the second holders has a through-hole for receiving the piping member therethrough, and a fit-in projecting portion that is fitted in the mounting hole so as to be positioned. Each of the first and the second holders also has a resilient lug and a collar portion for cooperatively clamping the panel with its inner and outer surfaces therebetween. The first holder holds the piping member relatively movably axially with respect to the first holder therethrough, while the second holder securely fixes the piping member axially with respect to the second holder therethrough.
摘要翻译：配管构件分别通过第一保持器安装在一个面板的安装孔中，并且分别通过第二保持器安装在另一个面板的安装孔中。第一和第二保持器中的每一个具有用于容纳管道构件的通孔，以及嵌合在安装孔中以便定位的嵌入突出部。第一和第二支架中的每一个还具有弹性凸耳和凸缘部分，用于协同地夹紧面板及其内表面和外表面之间的面板。第一保持器保持管道构件相对于第一保持件相对移动地相对移动，而第二保持器相对于第二保持件轴向地固定配管构件。

8. 发明授权

US06593252B1 Film deposition method and apparatus 失效
标题翻译：薄膜沉积方法和装置
公开(公告)号：US06593252B1
公开(公告)日：2003-07-15
申请号：US09830609
申请日：2001-04-30
申请人： Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
发明人： Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
IPC分类号： H01L21469
CPC分类号： H01L21/6715 , C23C18/08
摘要： The present invention is characterized by comprising a supply means (28) for supplying an organometallic fluid, which has an organic metal as a main component and which precipitates film deposition material using a pyrolytic decomposition reaction; an application means (126) for applying the organometallic fluid that is supplied by said supply means onto a to-be-processed body; and a heating means (52) for heating to a predetermined temperature the to-be-processed body to which is applied the organometallic fluid by said application means; wherein said application means (126) is characterized by being outfitted with an application fluid containing body (100), which is capable of containing said organometallic fluid and capable of coming into contact with and separation from said to-be-processed body.
摘要翻译：本发明的特征在于包括用于供应有机金属液体的供给装置（28），所述有机金属液体以有机金属为主要成分，并使用热分解反应沉淀成膜材料; 用于将由所述供给装置供应的有机金属液体施加到待处理体上的施加装置（126）以及加热装置（52），用于将由所述施加装置施加有机金属液体的待处理体加热到预定温度; 其特征在于，所述施加装置（126）的特征在于，其配备有能够容纳所述有机金属液体并且能够与所述待处理体接触并与其分离的涂布液体（100）。

9. 发明授权

US5624536A Processing apparatus with collimator exchange device 失效
标题翻译：具有准直器交换装置的处理装置
公开(公告)号：US5624536A
公开(公告)日：1997-04-29
申请号：US468471
申请日：1995-06-06
申请人： Yuichi Wada , Jiro Katsuki , Hiroshi Kobayashi
发明人： Yuichi Wada , Jiro Katsuki , Hiroshi Kobayashi
IPC分类号： C23C14/34 , C23C14/56 , H01J37/34 , H01L21/203
CPC分类号： H01J37/3447 , C23C14/34 , C23C14/564 , H01J37/3408
摘要： The sputtering system of the present invention includes a spare collimator storage chamber for accommodating one or more spare collimators and a processing chamber, which are provided in one-piece or in communication with each other through a gate valve. A used collimator in the processing chamber is quickly and readily replaced with a new collimator stored in the spare collimator storage chamber by a collimator exchanging device without exposing the interior of the processing chamber to atmospheric air.
摘要翻译：本发明的溅射系统包括用于容纳一个或多个备用准直器和处理室的备用准直器存储室，该备用准直器和处理室通过闸阀一体地设置或彼此连通。处理室中使用的准直器被准直器更换装置快速且容易地替换为存储在备用准直器存储室中的新的准直器，而不会使处理室的内部暴露于大气中。

10. 发明授权

US4642429A Switch 失效
标题翻译：开关
公开(公告)号：US4642429A
公开(公告)日：1987-02-10
申请号：US629833
申请日：1984-07-02
申请人： Teijiro Mori , Yuichi Wada , Yuji Sako , Hiroaki Tazawa , Hiroyuki Okado
发明人： Teijiro Mori , Yuichi Wada , Yuji Sako , Hiroaki Tazawa , Hiroyuki Okado
IPC分类号： H01H9/36 , H01H33/08
CPC分类号： H01H9/36
摘要： A switch characterized by a stationary contact element joined to a stationary contact, a movable contact element joined to a movable contact in a facing relationship to said stationary contact element, a first metallic arc extinguishing plate formed of a U-shaped vertical wall and disposed with its open end facing toward a tip of said stationary contact and which surround said stationary contact element, and a second metallic arc extinguishing plate disposed in parallel to and at the remote side from said contact elements of said first metallic arc extinguishing plate, said first metallic arc extinguishing plates being disposed at predetermined gaps relative to said stationary contact.
摘要翻译： PCT No.PCT / JP83 / 00397 Sec。 371日期1984年7月2日 102（e）日期1984年7月2日PCT提交1983年11月4日PCT公布。出版物WO84 / 02033 日期：1984年5月24日。一种开关，其特征在于，固定接触元件与固定触头接合，以与所述固定触点元件相对的方式接合到可动触头的可动触头元件，由U形触头构成的第一金属灭弧板，并且设置成其开口端朝向所述固定触点的尖端并且围绕所述固定触点元件;以及第二金属灭弧板，其与所述第一金属弧的所述接触元件平行且远离所述远离一侧设置所述第一金属灭弧板相对于所述固定触点设置在预定的间隙。

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