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1. 发明授权

US07486392B2 Method of inspecting for defects and apparatus for performing the method 有权
标题翻译：检查缺陷的方法和执行该方法的装置
公开(公告)号：US07486392B2
公开(公告)日：2009-02-03
申请号：US11476651
申请日：2006-06-29
申请人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
发明人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/4738
摘要： In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.
摘要翻译：在检查物体的方法中，将第一光照射到裸物体上，并且从裸物体反射第一反射信号。将第二光照射到经处理的物体上，并且第二反射信号从被处理物体反射。第一和第二反射信号被微分，从而产生相应的第一和第二差分信号。通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。从对应于信号偏离部分的处理对象的一部分检测缺陷。

2. 发明申请

US20070002317A1 Method of inspecting for defects and apparatus for performing the method 有权
标题翻译：检查缺陷的方法和执行该方法的装置
公开(公告)号：US20070002317A1
公开(公告)日：2007-01-04
申请号：US11476651
申请日：2006-06-29
申请人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
发明人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/4738
摘要： In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.
摘要翻译：在检查物体的方法中，将第一光照射到裸物体上，并且从裸物体反射第一反射信号。将第二光照射到经处理的物体上，并且第二反射信号从被处理物体反射。第一和第二反射信号被微分，从而产生相应的第一和第二差分信号。通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。从对应于信号偏离部分的处理对象的一部分检测缺陷。

3. 发明授权

US07446865B2 Method of classifying defects 有权
标题翻译：分类缺陷的方法
公开(公告)号：US07446865B2
公开(公告)日：2008-11-04
申请号：US11421019
申请日：2006-05-30
申请人： Ki-Suk Chung , Chung-Sam Jun , Yu-Sin Yang , Byung-Sug Lee , Ji-Young Shin , Tae-Sung Kim
发明人： Ki-Suk Chung , Chung-Sam Jun , Yu-Sin Yang , Byung-Sug Lee , Ji-Young Shin , Tae-Sung Kim
IPC分类号： G01N21/00
CPC分类号： G06T7/0004
摘要： A method of classifying defects of an object includes irradiating multi-wavelength light onto the object, splitting light reflected from the object into light beams, each of the light beams having different wavelengths, obtaining image information of the object based on each of the light beams, forming a characteristic matrix that represent the wavelengths and the image information, and analyzing the characteristic matrix to determine types of the defects on the object. Thus, the defects may be accurately classified using a difference between reactivity of each of the defects in accordance with variations of the wavelengths and inspection conditions.
摘要翻译：对物体的缺陷进行分类的方法包括将多波长光照射到物体上，将从物体反射的光分成光束，每个光束具有不同的波长，基于每个光束获得物体的图像信息，形成表示波长和图像信息的特征矩阵，并且分析特征矩阵以确定对象上的缺陷的类型。因此，可以使用根据波长的变化和检查条件的每个缺陷的反应性之间的差异来精确地分类缺陷。

4. 发明申请

US20060039598A1 Method and apparatus for inspecting substrate pattern 有权
标题翻译：检查基板图案的方法和装置
公开(公告)号：US20060039598A1
公开(公告)日：2006-02-23
申请号：US11207772
申请日：2005-08-22
申请人： Kye-Weon Kim , Chung-Sam Jun , Ki-Suk Chung , Sang-Mun Chon , Seong-Jin Kim , Byung-Sug Lee , Yu-Sin Yang
发明人： Kye-Weon Kim , Chung-Sam Jun , Ki-Suk Chung , Sang-Mun Chon , Seong-Jin Kim , Byung-Sug Lee , Yu-Sin Yang
IPC分类号： G06K9/00
CPC分类号： G01N21/21 , G01N21/33 , G01N21/9501 , G01N21/95607 , G01N2021/95615
摘要： A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.
摘要翻译：公开了使用统计推断功能检查检查图案的方法。关于由参考基板上的感兴趣单元处理形成的多个参考图案的光参考信号数据和参考图案特征数据，产生推理函数。

5. 发明授权

US07385689B2 Method and apparatus for inspecting substrate pattern 有权
标题翻译：检查基板图案的方法和装置
公开(公告)号：US07385689B2
公开(公告)日：2008-06-10
申请号：US11207772
申请日：2005-08-22
申请人： Kye-Weon Kim , Chung-Sam Jun , Ki-Suk Chung , Sang-Mun Chon , Seong-Jin Kim , Byung-Sug Lee , Yu-Sin Yang
发明人： Kye-Weon Kim , Chung-Sam Jun , Ki-Suk Chung , Sang-Mun Chon , Seong-Jin Kim , Byung-Sug Lee , Yu-Sin Yang
IPC分类号： G01N21/00
CPC分类号： G01N21/21 , G01N21/33 , G01N21/9501 , G01N21/95607 , G01N2021/95615
摘要： A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.
摘要翻译：公开了使用统计推断功能检查检查图案的方法。关于由参考基板上的感兴趣单元处理形成的多个参考图案的光参考信号数据和参考图案特征数据，产生推理函数。

6. 发明授权

US07394279B2 Method of measuring a surface voltage of an insulating layer 失效
标题翻译：测量绝缘层的表面电压的方法
公开(公告)号：US07394279B2
公开(公告)日：2008-07-01
申请号：US11461312
申请日：2006-07-31
申请人： Mi-Sung Lee , Yu-Sin Yang , Chung-Sam Jun , Byung-Sug Lee
发明人： Mi-Sung Lee , Yu-Sin Yang , Chung-Sam Jun , Byung-Sug Lee
IPC分类号： G01R31/26 , G01R19/00 , G01R31/08
CPC分类号： G01R31/2648 , G01R29/12 , G01R31/2656
摘要： In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.
摘要翻译：在测量绝缘层的表面电压的方法中，在耗尽区中测量表面电压的次数增加，从而可以获得关于耗尽区的精确数据。在积累区域和反转区域中测量表面电压的次数减少，从而可以快速获得关于耗尽区域的数据。

7. 发明申请

US20070202615A1 Method of measuring critical dimension 审中-公开
标题翻译：测量临界尺寸的方法
公开(公告)号：US20070202615A1
公开(公告)日：2007-08-30
申请号：US11702599
申请日：2007-02-06
申请人： Byung-Sug Lee , Mi-Sung Lee , Yu-Sin Yang , Yun-Jung Jee , Chung-Sam Jun
发明人： Byung-Sug Lee , Mi-Sung Lee , Yu-Sin Yang , Yun-Jung Jee , Chung-Sam Jun
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： H01L22/12
摘要： In a method of measuring a critical dimension for conductive structures or openings exposing conductive structures formed on a substrate, a corona ion charge is deposited on the conductive structures and/or an insulating layer having the openings in a measurement region of the substrate. The critical dimension of the conductive structures or the openings may be determined by comparing variations of a surface voltage caused by leakage current through the conductive structures with reference data to thereby improve reliability of the critical dimension measurement.
摘要翻译：在测量形成在衬底上的导电结构的导电结构或开口的临界尺寸的方法中，电晕离子电荷沉积在导电结构和/或在衬底的测量区域中具有开口的绝缘层上。可以通过将通过导电结构的漏电流引起的表面电压的变化与参考数据进行比较来确定导电结构或开口的临界尺寸，从而提高临界尺寸测量的可靠性。

8. 发明授权

US08050488B2 Method of analyzing a wafer sample 失效
标题翻译：分析晶圆样品的方法
公开(公告)号：US08050488B2
公开(公告)日：2011-11-01
申请号：US12041127
申请日：2008-03-03
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N21/95607 , G06T2207/10061 , G06T2207/30148
摘要： In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.
摘要翻译：在分析晶片样品的方法中，检测具有用相关曝光条件曝光的拍摄区域的晶片样品上的光致抗蚀剂图案的第一缺陷。图案的第一部分包括用与参考曝光条件相对应的曝光条件和参考曝光条件的公差误差范围曝光的拍摄区域。在图案的第二部分中的至少两个拍摄区域中重复存在的第一缺陷被设置为图案的第二缺陷。获得显示第二缺陷的第一参考图像。对应于第二缺陷的第一部分中的拍摄区域的第一缺陷被设置为对应于图案的弱点的第三缺陷。没有弱点的照射区域的曝光条件被设置为曝光处理的曝光余量。

9. 发明申请

US20090238445A1 Method of detecting a defect on an object 有权
标题翻译：检测物体上的缺陷的方法
公开(公告)号：US20090238445A1
公开(公告)日：2009-09-24
申请号：US12383017
申请日：2009-03-19
申请人： Yu-Sin Yang , Kyung-Suk Song , Ji-Hae Kim , Chung-Sam Jun
发明人： Yu-Sin Yang , Kyung-Suk Song , Ji-Hae Kim , Chung-Sam Jun
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In a method of detecting a defect on an object, a preliminary reference image can be obtained from a plurality of comparison regions defined on the object. The preliminary reference image is divided into reference zones by a similar brightness. Each of the reference zones is provided with substantially the same gray level, respectively, to obtain a reference image. Whether a defect exists in an inspection region in the comparison regions is determined using the reference image. Thus, defects in the inspection regions having different brightnesses can be detected using the properly obtained reference image.
摘要翻译：在检测物体上的缺陷的方法中，可以从对象上定义的多个比较区域中获得初步参考图像。初步参考图像以相似的亮度分为参考区域。每个参考区分别具有基本上相同的灰度级，以获得参考图像。使用参考图像确定在比较区域中的检查区域中是否存在缺陷。因此，可以使用适当地获得的参考图像来检测具有不同亮度的检查区域中的缺陷。

10. 发明授权

US07573568B2 Method and apparatus for detecting a photolithography processing error, and method and apparatus for monitoring a photolithography process 有权
标题翻译：用于检测光刻处理误差的方法和装置，以及用于监测光刻工艺的方法和装置
公开(公告)号：US07573568B2
公开(公告)日：2009-08-11
申请号：US10909238
申请日：2004-07-30
申请人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
发明人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G03F7/70608 , G03F7/70616
摘要： An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.
摘要翻译：用于监测光刻工艺的装置包括测量器和数据处理器。测量器测量衬底的光学特性。数据处理器基于光学测量器来确定衬底的缺陷。

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