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1. 发明授权

US08703405B2 Methods of generating three-dimensional process window qualification 有权
标题翻译：生成三维过程窗口资格的方法
公开(公告)号：US08703405B2
公开(公告)日：2014-04-22
申请号：US13462250
申请日：2012-05-02
申请人： Young-Hoon Sohn , Sang-Kil Lee , Yu-Sin Yang
发明人： Young-Hoon Sohn , Sang-Kil Lee , Yu-Sin Yang
IPC分类号： G03F7/00
CPC分类号： G03F7/70616 , G03F7/705
摘要： In a method of generating a three-dimensional process window qualification, a photoresist layer is coated on a substrate including an underlying structure. A plurality of circular-shaped regions of the substrate are distinguished into 1 to n regions to partition the substrate into a center portion and an edge portion, n being a natural number greater than 2. 1 to n exposing ranges are set, including a common exposing condition for the 1 to n regions. A photoresist pattern is fox led by exposing each shot portion in the 1 to n regions using a split exposing condition in the 1 to n exposing ranges. The photoresist pattern is detected, and a normal photoresist pattern with respect to each of the 1 to n regions is selected to generate the three-dimensional process window qualification.
摘要翻译：在产生三维工艺窗口鉴定的方法中，光致抗蚀剂层被涂覆在包括下面的结构的衬底上。衬底的多个圆形区域被区分为1到n个区域，以将衬底分成中心部分和边缘部分，n是大于2的自然数，1至n个曝光范围被设置，包括公共暴露1〜n个区域的状况。光致抗蚀剂图案是通过在1至n个曝光范围内使用分割曝光条件曝光1至n个区域中的每个拍摄部分来引导的狐狸。检测光致抗蚀剂图案，并且选择相对于1至n个区域中的每一个的常规光致抗蚀剂图案以产生三维工艺窗口鉴定。

2. 发明授权

US08055057B2 Method for detecting defects in a substrate having a semiconductor device thereon 失效
标题翻译：用于检测其上具有半导体器件的衬底中的缺陷的方法
公开(公告)号：US08055057B2
公开(公告)日：2011-11-08
申请号：US12007680
申请日：2008-01-14
申请人： Moon-Shik Kang , Jong-An Kim , Myung-Sub Lee , Yu-Sin Yang , Ji-Hye Kim
发明人： Moon-Shik Kang , Jong-An Kim , Myung-Sub Lee , Yu-Sin Yang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G01N21/95607 , G01N21/9501 , G06T7/0006 , G06T2207/30148
摘要： An inspection apparatus and a method for detecting defects in a substrate having a semiconductor device thereon are provided. The method includes establishing a first inspection region including first patterns repeatedly formed in a first direction and a second inspection region including second patterns repeatedly formed in a second direction on the substrate, determining a first unit inspection size of the first inspection region and a second unit inspection size of the second inspection region, obtaining images of the first and second patterns by moving the substrate in the first direction, and detecting defects in the first and second inspection regions by comparing the obtained images of portions of the first and second inspection regions, respectively, with each other. The first inspection size and second inspection size function as comparison units if defects are detected. The substrate may face an image receiving member.
摘要翻译：提供一种用于检测其上具有半导体器件的衬底中的缺陷的检查装置和方法。该方法包括建立包括在第一方向上重复形成的第一图案的第一检查区域和包括在基板上沿第二方向重复形成的第二图案的第二检查区域，确定第一检查区域的第一单位检查尺寸和第二单元检查区域第二检查区域的检查尺寸，通过沿第一方向移动基板获得第一图案和第二图案的图像，并且通过比较获得的第一和第二检查区域的部分的图像来检测第一和第二检查区域中的缺陷，分别彼此。如果检测到缺陷，则第一检查尺寸和第二检查尺寸用作比较单元。基板可面向图像接收部件。

3. 发明授权

US08034640B2 Apparatus and method to inspect defect of semiconductor device 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US08034640B2
公开(公告)日：2011-10-11
申请号：US12627222
申请日：2009-11-30
申请人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
发明人： Ji-Young Shin , Young-Nam Kim , Jong-An Kim , Hyung-Suk Cho , Yu-Sin Yang
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.
摘要翻译：一种用于检查半导体器件的缺陷的装置和方法。由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像在下层。为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

4. 发明授权

US07697130B2 Apparatus and method for inspecting a surface of a wafer 有权
标题翻译：用于检查晶片表面的装置和方法
公开(公告)号：US07697130B2
公开(公告)日：2010-04-13
申请号：US12368020
申请日：2009-02-09
申请人： Woo-Seok Ko , Yu-Sin Yang , Young-Jee Yoon , Chung-Sam Jun
发明人： Woo-Seok Ko , Yu-Sin Yang , Young-Jee Yoon , Chung-Sam Jun
IPC分类号： G01N21/88 , G06F19/00
CPC分类号： G01N21/9501 , G01N2021/8858 , G01N2021/8861
摘要： A surface inspection apparatus and method increase wafer productivity, wherein to increase an efficiency of the surface inspection apparatus to detect defects during a scanning of the wafer surface, a scanning speed for a subsequent defect detection is varied according to an increase/decrease of defect density represented on a plurality of images acquired successively. When the density of defects is reduced, the scanning speed increases and a level of a skip rule increases, and when the density of defects increases, the scanning speed decreases and a level of the skip rule decreases to precisely detect defects, thereby increasing reliability, throughput, and productivity.
摘要翻译：表面检查装置和方法提高晶片生产率，其中为了提高表面检查装置在晶片表面的扫描期间的缺陷的效率，随后的缺陷检测的扫描速度根据缺陷密度的增加/减小而变化表示在连续获取的多个图像上。当缺陷密度降低时，扫描速度增加，跳跃规则的水平增加，并且当缺陷密度增加时，扫描速度降低，并且跳过规则的水平降低以精确地检测缺陷，从而提高可靠性，吞吐量和生产力。

5. 发明授权

US07486392B2 Method of inspecting for defects and apparatus for performing the method 有权
标题翻译：检查缺陷的方法和执行该方法的装置
公开(公告)号：US07486392B2
公开(公告)日：2009-02-03
申请号：US11476651
申请日：2006-06-29
申请人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
发明人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/4738
摘要： In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.
摘要翻译：在检查物体的方法中，将第一光照射到裸物体上，并且从裸物体反射第一反射信号。将第二光照射到经处理的物体上，并且第二反射信号从被处理物体反射。第一和第二反射信号被微分，从而产生相应的第一和第二差分信号。通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。从对应于信号偏离部分的处理对象的一部分检测缺陷。

6. 发明申请

US20080219547A1 METHOD OF ANALYZING A WAFER SAMPLE 失效
标题翻译：分析样品的方法
公开(公告)号：US20080219547A1
公开(公告)日：2008-09-11
申请号：US12041127
申请日：2008-03-03
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N21/95607 , G06T2207/10061 , G06T2207/30148
摘要： In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.
摘要翻译：在分析晶片样品的方法中，检测具有用相关曝光条件曝光的拍摄区域的晶片样品上的光致抗蚀剂图案的第一缺陷。图案的第一部分包括用与参考曝光条件相对应的曝光条件和参考曝光条件的公差误差范围暴露的照射区域。在图案的第二部分中的至少两个拍摄区域中重复存在的第一缺陷被设置为图案的第二缺陷。获得显示第二缺陷的第一参考图像。对应于第二缺陷的第一部分中的拍摄区域的第一缺陷被设置为对应于图案的弱点的第三缺陷。没有弱点的照射区域的曝光条件被设置为曝光处理的曝光余量。

7. 发明申请

US20080112608A1 Method of detecting defects in patterns and apparatus for performing the same 有权
标题翻译：检测图案中的缺陷的方法及其执行方法
公开(公告)号：US20080112608A1
公开(公告)日：2008-05-15
申请号：US11979776
申请日：2007-11-08
申请人： Yu-Sin Yang , Chung-Sam Jun , Jong-An Kim , Moon-Shik Kang , Ji-Hye Kim
发明人： Yu-Sin Yang , Chung-Sam Jun , Jong-An Kim , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/10056 , G06T2207/20056 , G06T2207/30148
摘要： In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.
摘要翻译：在检测图案中的缺陷的方法和执行该方法的装置中，可以获取半导体衬底上的检测区域的第一图像。可以通过执行傅里叶变换并执行低通滤波从第一图像获取第二图像。可以将第二图像与参考图像进行比较，从而检测出检测区域的缺陷。使用第二图像的每个像素的灰度级与参考图像之间的关系值来确定第二图像的缺陷的存在。当存在缺陷时，组合关系值最小的像素的水平和垂直位置以确定缺陷的位置。

8. 发明申请

US20080049219A1 WAFER INSPECTING METHOD 有权
标题翻译：波形检测方法
公开(公告)号：US20080049219A1
公开(公告)日：2008-02-28
申请号：US11693356
申请日：2007-03-29
申请人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
发明人： Ji-Hye Kim , Yu-Sin Yang , Jong-An Kim , Moon-Shik Kang , Ji-Young Shin
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/9501 , G01N2021/8864 , G01N2021/8867 , G01N2021/8887
摘要： A wafer inspecting method including the steps of: multi-scanning a pattern image of a unit inspection region in a normal state and a pattern image of a unit inspection region to be inspected, respectively, using different inspection conditions; comparing the multi-scanned pattern images in the normal state with the multi-scanned pattern images to be inspected obtained by the same inspection conditions, and storing differences between the pattern images as difference images; generating a discrimination difference image by calculating a balance between the stored difference images; and discriminating a defect from noise by using the discrimination difference image.
摘要翻译：一种晶片检查方法，包括以下步骤：使用不同的检查条件分别对正常状态下的单位检查区域的图案图像和要检查的单位检查区域的图案图像进行多次扫描; 将正常状态下的多扫描图案图像与通过相同检查条件获得的待检查的多扫描图案图像进行比较，并且将图案图像之间的差异存储为差分图像; 通过计算所存储的差分图像之间的平衡来产生鉴别差异图像; 以及通过使用辨别差异图像来区分缺陷和噪声。

9. 发明申请

US20070002317A1 Method of inspecting for defects and apparatus for performing the method 有权
标题翻译：检查缺陷的方法和执行该方法的装置
公开(公告)号：US20070002317A1
公开(公告)日：2007-01-04
申请号：US11476651
申请日：2006-06-29
申请人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
发明人： Yu-Sin Yang , Chung-Sam Jun , Ki-Suk Chung , Tae-Sung Kim , Byung-Sug Lee
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/4738
摘要： In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.
摘要翻译：在检查物体的方法中，将第一光照射到裸物体上，并且从裸物体反射第一反射信号。将第二光照射到经处理的物体上，并且第二反射信号从被处理物体反射。第一和第二反射信号被微分，从而产生相应的第一和第二差分信号。通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。从对应于信号偏离部分的处理对象的一部分检测缺陷。

10. 发明授权

US07113274B2 Method and apparatus for inspecting a substrate 有权
标题翻译：用于检查基板的方法和装置
公开(公告)号：US07113274B2
公开(公告)日：2006-09-26
申请号：US10777922
申请日：2004-02-11
申请人： Yu-Sin Yang , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Yu-Sin Yang , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： G01N21/00
CPC分类号： G01N21/4738 , G01N21/94 , G01N21/9501 , G01N21/956
摘要： In a method and an apparatus for inspecting defects on a substrate using a light beam, a light source irradiates light beams having different wavelengths onto the substrate. A detector detects first lights scattered from a surface of the substrate and second lights scattered from impurities on the substrate by irradiation of the light beams. An operation unit compares first intensities of the first lights with second intensities of the second lights in order to produce differential values therebetween, and selects a wavelength corresponding to a maximum value of the differential values. An inspection process for inspecting the defects on the substrate is performed using a light beam having the selected wavelength.
摘要翻译：在使用光束检查基板上的缺陷的方法和装置中，光源将具有不同波长的光束照射到基板上。检测器通过照射光束来检测从基板的表面散射的第一光和从基板上的杂质散射的第二光。操作单元将第一光的第一强度与第二光的第二强度进行比较，以便在其间产生微分值，并选择与差分值的最大值对应的波长。使用具有所选择的波长的光进行用于检查基板上的缺陷的检查处理。

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