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1. 发明申请

US20070202615A1 Method of measuring critical dimension 审中-公开
标题翻译：测量临界尺寸的方法
公开(公告)号：US20070202615A1
公开(公告)日：2007-08-30
申请号：US11702599
申请日：2007-02-06
申请人： Byung-Sug Lee , Mi-Sung Lee , Yu-Sin Yang , Yun-Jung Jee , Chung-Sam Jun
发明人： Byung-Sug Lee , Mi-Sung Lee , Yu-Sin Yang , Yun-Jung Jee , Chung-Sam Jun
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： H01L22/12
摘要： In a method of measuring a critical dimension for conductive structures or openings exposing conductive structures formed on a substrate, a corona ion charge is deposited on the conductive structures and/or an insulating layer having the openings in a measurement region of the substrate. The critical dimension of the conductive structures or the openings may be determined by comparing variations of a surface voltage caused by leakage current through the conductive structures with reference data to thereby improve reliability of the critical dimension measurement.
摘要翻译：在测量形成在衬底上的导电结构的导电结构或开口的临界尺寸的方法中，电晕离子电荷沉积在导电结构和/或在衬底的测量区域中具有开口的绝缘层上。可以通过将通过导电结构的漏电流引起的表面电压的变化与参考数据进行比较来确定导电结构或开口的临界尺寸，从而提高临界尺寸测量的可靠性。

2. 发明授权

US07186577B2 Method for monitoring a density profile of impurities 有权
标题翻译：监测杂质浓度分布的方法
公开(公告)号：US07186577B2
公开(公告)日：2007-03-06
申请号：US10787772
申请日：2004-02-27
申请人： Yun-Jung Jee , Sun-Yong Choi , Chung-Sam Jun , Kwan-Woo Ryu
发明人： Yun-Jung Jee , Sun-Yong Choi , Chung-Sam Jun , Kwan-Woo Ryu
IPC分类号： H01L21/66
CPC分类号： G01N21/9501
摘要： A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.
摘要翻译：一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

3. 发明申请

US20060011837A1 Method of forming a three-dimensional image of a pattern to be inspected and apparatus for performing the same 有权
标题翻译：形成待检查图案的三维图像的方法及其执行方法
公开(公告)号：US20060011837A1
公开(公告)日：2006-01-19
申请号：US11180504
申请日：2005-07-12
申请人： Yun-Jung Jee , Chung-Sam Jun , Yu-Sin Yang , Tae-Kyoung Kim
发明人： Yun-Jung Jee , Chung-Sam Jun , Yu-Sin Yang , Tae-Kyoung Kim
IPC分类号： G21K7/00
CPC分类号： G21K7/00
摘要： In a method and apparatus for forming a three-dimensional image for an inspection pattern, a reference intensity function of an inspection X-ray is formed in accordance with a continuous scanning depth, and is differentiated with respect to the scanning depth. The differential reference intensity function is decomposed into a start function and a characteristic function. The differential reference intensity function is then repeatedly integrated while a temporary vertical profile function is substituted for the start function until the temporary intensity of a reference X-ray is within an allowable error range. The temporary vertical profile function satisfying the error range is selected as an optimal vertical profile function. A surface shape is combined to the optimal vertical profile function along a depth of the inspection pattern to thereby form the three-dimensional image for the inspection pattern.
摘要翻译：在用于形成检查图案的三维图像的方法和装置中，根据连续的扫描深度形成检查X射线的参考强度函数，并且相对于扫描深度是不同的。差分参考强度函数被分解为起始函数和特征函数。差分参考强度函数然后被重复地积分，而临时垂直轮廓函数被替换为开始函数，直到参考X射线的临时强度在可允许的误差范围内。选择满足误差范围的临时垂直剖面函数作为最佳垂直剖面函数。沿着检查图案的深度将表面形状组合到最佳垂直轮廓函数，从而形成用于检查图案的三维图像。

4. 发明授权

US07428328B2 Method of forming a three-dimensional image of a pattern to be inspected and apparatus for performing the same 有权
标题翻译：形成待检查图案的三维图像的方法及其执行方法
公开(公告)号：US07428328B2
公开(公告)日：2008-09-23
申请号：US11180504
申请日：2005-07-12
申请人： Yun-Jung Jee , Chung-Sam Jun , Yu-Sin Yang , Tae-Kyoung Kim
发明人： Yun-Jung Jee , Chung-Sam Jun , Yu-Sin Yang , Tae-Kyoung Kim
IPC分类号： G06K9/00
CPC分类号： G21K7/00
摘要： In a method and apparatus for forming a three-dimensional image for an inspection pattern, a reference intensity function of an inspection X-ray is formed in accordance with a continuous scanning depth, and is differentiated with respect to the scanning depth. The differential reference intensity function is decomposed into a start function and a characteristic function. The differential reference intensity function is then repeatedly integrated while a temporary vertical profile function is substituted for the start function until the temporary intensity of a reference X-ray is within an allowable error range. The temporary vertical profile function satisfying the error range is selected as an optimal vertical profile function. A surface shape is combined to the optimal vertical profile function along a depth of the inspection pattern to thereby form the three-dimensional image for the inspection pattern.
摘要翻译：在用于形成检查图案的三维图像的方法和装置中，根据连续的扫描深度形成检查X射线的参考强度函数，并且相对于扫描深度是不同的。差分参考强度函数被分解为起始函数和特征函数。差分参考强度函数然后被重复地积分，而临时垂直轮廓函数被替换为开始函数，直到参考X射线的临时强度在可允许的误差范围内。选择满足误差范围的临时垂直剖面函数作为最佳垂直剖面函数。沿着检查图案的深度将表面形状组合到最佳垂直轮廓函数，从而形成用于检查图案的三维图像。

5. 发明授权

US07310140B2 Method and apparatus for inspecting a wafer surface 有权
标题翻译：检查晶片表面的方法和装置
公开(公告)号：US07310140B2
公开(公告)日：2007-12-18
申请号：US10877684
申请日：2004-06-25
申请人： Tae-Min Eom , Yu-Sin Yang , Chung-Sam Jun , Yun-Jung Jee , Joung-Soo Kim , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi
发明人： Tae-Min Eom , Yu-Sin Yang , Chung-Sam Jun , Yun-Jung Jee , Joung-Soo Kim , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/55 , G01N2021/556
摘要： In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.
摘要翻译：在用于检查晶片表面的方法和装置中，将晶片装入室中。将包括用于感测晶片的垂直位置的第一光和用于检查晶片表面的第二光的入射光照射到晶片上。第一光被反射在晶片的检查区域或下一个检查区域上，并被检测以控制晶片位置。第二光被分散在检查区域上，并被检测以检查检查区域的晶片表面。在检查晶片的检查区域的表面之前检查晶片的位置信息并调整晶片的位置，以便能够精确地检查晶片表面。

6. 发明申请

US20070190904A1 Wafer holder and wafer conveyor equipped with the same 失效
标题翻译：晶圆架和晶圆输送机配备相同
公开(公告)号：US20070190904A1
公开(公告)日：2007-08-16
申请号：US11783534
申请日：2007-04-10
申请人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
发明人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
IPC分类号： B24B51/00
CPC分类号： H01L21/68785 , H01L21/6776
摘要： The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
摘要翻译：本发明涉及晶片保持器和相关的晶片输送系统。晶片保持器保持晶片并且在腔室内水平移动。晶片和晶片保持架之间的接触面积减小，并且由晶片保持器的部件之间的耳朵产生的潜在的污染物被气密的盖子所困住。由于晶片保持架在固定到导轨的同时水平移动，所以晶片传送系统减小了导轨和晶片保持器之间的摩擦。

7. 发明授权

US07220173B2 Wafer holder and wafer conveyor system equipped with the same 失效
标题翻译：晶圆架和晶圆输送系统配备相同
公开(公告)号：US07220173B2
公开(公告)日：2007-05-22
申请号：US11016247
申请日：2004-12-20
申请人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
发明人： Tae-Kyoung Kim , Yun-Jung Jee , Kyoung-Su Shin , Chung-Sam Jun
IPC分类号： B24B47/02
CPC分类号： H01L21/68785 , H01L21/6776
摘要： The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
摘要翻译：本发明涉及晶片保持器和相关的晶片输送系统。晶片保持器保持晶片并且在腔室内水平移动。晶片和晶片固定器之间的接触面积减小，并且由晶片保持器的部件之间的耳朵产生的潜在的污染物被气密的盖子所困住。由于晶片保持架在固定到导轨的同时水平移动，所以晶片传送系统减小了导轨和晶片保持器之间的摩擦。

8. 发明授权

US07186280B2 Method of inspecting a leakage current characteristic of a dielectric layer and apparatus for performing the method 有权
标题翻译：检查电介质层的漏电流特性的方法及其执行方法
公开(公告)号：US07186280B2
公开(公告)日：2007-03-06
申请号：US11175363
申请日：2005-07-07
申请人： Tae-Min Eom , Chung-Sam Jun , Yu-Sin Yang , Yun-Jung Jee
发明人： Tae-Min Eom , Chung-Sam Jun , Yu-Sin Yang , Yun-Jung Jee
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： G01R31/1263 , Y10T29/41
摘要： A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.
摘要翻译：一种在包括具有包括图案化结构的多个单元块，形成在图案化结构上的电介质层和外围电路区域的单元阵列区域的基板上检查介质层的漏电流的方法，包括沉积电晕离子电荷在从所述多个单元块中选择的单元块上测量由所选择的单元块上的介电层的漏电流引起的表面电压的方差。将表面电压的方差与参考数据进行比较，以确定电介质层的漏电流特性。

9. 发明申请

US20060022698A1 Method of inspecting a leakage current characteristic of a dielectric layer and apparatus for performing the method 有权
标题翻译：检查电介质层的漏电流特性的方法及其执行方法
公开(公告)号：US20060022698A1
公开(公告)日：2006-02-02
申请号：US11175363
申请日：2005-07-07
申请人： Tae-Min Eom , Chung-Sam Jun , Yu-Sin Yang , Yun-Jung Jee
发明人： Tae-Min Eom , Chung-Sam Jun , Yu-Sin Yang , Yun-Jung Jee
IPC分类号： G01R31/26
CPC分类号： G01R31/1263 , Y10T29/41
摘要： A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.
摘要翻译：一种在包括具有包括图案化结构的多个单元块，形成在图案化结构上的电介质层和外围电路区域的单元阵列区域的基板上检查介质层的漏电流的方法，包括沉积电晕离子电荷在从所述多个单元块中选择的单元块上测量由所选择的单元块上的介电层的漏电流引起的表面电压的方差。将表面电压的方差与参考数据进行比较，以确定电介质层的漏电流特性。

10. 发明申请

US20100156446A1 METHOD OF INSPECTING A SUBSTRATE 审中-公开
标题翻译：检查基板的方法
公开(公告)号：US20100156446A1
公开(公告)日：2010-06-24
申请号：US12641918
申请日：2009-12-18
申请人： Chun-Yong KIM , Mi-Ra Park , Yun-Jung Jee , Chung-Sam Jun
发明人： Chun-Yong KIM , Mi-Ra Park , Yun-Jung Jee , Chung-Sam Jun
IPC分类号： G01R31/02 , G01R31/26
CPC分类号： H01L22/20 , H01L22/14
摘要： A method of inspecting a substrate includes measuring a first current flowing between a first region and a second region of the substrate using a first probe. A second current flowing between the first region and the second region of the substrate may be measured using a second probe including a material different from that of the first probe. By comparing the first and second currents, it can be determined whether there is a change in a physical composition of the substrate and a change in a physical configuration of the substrate between the first region and the second region. Thus, when the current change is induced by the change in a physical configuration of the substrate, a determination error that the contaminants on the semiconductor substrate may exist based on the current change may be prevented.
摘要翻译：检查衬底的方法包括使用第一探针来测量在衬底的第一区域和第二区域之间流动的第一电流。可以使用包括不同于第一探针的材料的第二探针来测量在衬底的第一区域和第二区域之间流动的第二电流。通过比较第一和第二电流，可以确定衬底的物理组成是否存在变化以及衬底在第一区域和第二区域之间的物理结构的变化。因此，当通过基板的物理结构的变化引起电流变化时，可以防止基于电流变化存在半导体衬底上的污染物的确定误差。

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