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    • 7. 发明申请
    • Method of Depositing Thin Film
    • 沉积薄膜的方法
    • US20080044567A1
    • 2008-02-21
    • US11571547
    • 2005-12-14
    • Tae SeoYoung ParkKi LeeSahng Lee
    • Tae SeoYoung ParkKi LeeSahng Lee
    • C23C16/00
    • H01L21/76843H01L21/28556H01L21/76861
    • Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited. If it is possible to continuously deposit Ti/TiN thin films on 1-6 substrates in one chamber, it is possible to set only one chamber among 4 chambers in a PM period, thereby an operating ratio of a cluster tool can be significantly improved. When Ti/TiN is continuously deposited in one chamber, the time needed to move a substrate from a Ti chamber to a TiN chamber is reduced, thus treatment efficiency of the substrate per unit time is significantly increased.
    • 公开了一种沉积薄膜的方法,其中薄膜连续地沉积到一个室中,并且将1-6个晶片装入室中。 在该方法中,能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。 该方法包括:(a)将至少一个衬底装载到腔室中,(b)将Ti薄膜沉积到衬底上,进行调整,使得保持第一工艺间隙;(c)移动晶片块使得第一工艺间隙 改变为第二工艺间隙,以便控制沉积Ti薄膜的衬底的工艺间隙,(d)将TiN薄膜沉积到衬底上,移动以设定第二工艺间隙,(e) 卸载沉积有Ti / TiN薄膜的基板。 如果可以在一个室中的1-6个基板上连续沉积Ti / TiN薄膜,则可以在PM周期内在4个室中仅设置一个室,从而可以显着提高簇工具的运行比。 当在一个室中连续沉积Ti / TiN时,将衬底从Ti室移动到TiN室所需的时间减少,因此每单位时间衬底的处理效率显着提高。