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1. 发明申请

US20070133272A1 Phase change memory device having semiconductor laser unit 有权
标题翻译：具有半导体激光器单元的相变存储器件
公开(公告)号：US20070133272A1
公开(公告)日：2007-06-14
申请号：US11635279
申请日：2006-12-07
申请人： Byoung Yu , Seung Lee , Sangouk Ryu , Sung Yoon , Young Park , Kyu Choi , Nam Lee
发明人： Byoung Yu , Seung Lee , Sangouk Ryu , Sung Yoon , Young Park , Kyu Choi , Nam Lee
IPC分类号： G11C11/00
CPC分类号： H01L45/1213 , G11C13/0004 , G11C13/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/1666
摘要： Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
摘要翻译：提供了一种相变存储器件，包括：相变存储器单元，包括相变层图案; 激光束聚焦单元将激光束局部聚焦在相变存储单元的相变层图案上; 以及向激光束聚焦单元产生并发射激光束的半导体激光器单元。因此，相变存储器件中的设定或复位操作使用局部施加的激光束，从而在单位电池的操作期间降低消耗功率并防止存储在相邻单元中的信息的破坏或改变。

2. 发明申请

US20070025226A1 Phase change memory device and method of manufacturing the same 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20070025226A1
公开(公告)日：2007-02-01
申请号：US11490405
申请日：2006-07-20
申请人： Young Park , Sang Ryu , Sung Yoon , Nam Lee , Kyu Choi , Seung Lee , Byoung Yu
发明人： Young Park , Sang Ryu , Sung Yoon , Nam Lee , Kyu Choi , Seung Lee , Byoung Yu
IPC分类号： G11B7/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Provided are a phase change memory device and a method of fabricating the same capable of maximizing a contact area of a phase change layer and a heating electrode. The memory device includes a heating electrode and a phase change layer. The heating electrode covers at least one side exposed by a pore and a portion of a surface of a lower electrode and includes a recess region. The phase change layer is stacked on the heating electrode filling up the recess region. The memory device may maximize a contact area of the phase change layer and the heating electrode, thereby greatly reducing power consumption.
摘要翻译：提供一种相变存储器件及其制造方法，其能够最大化相变层和加热电极的接触面积。存储装置包括加热电极和相变层。加热电极覆盖由孔隙和下部电极的表面的一部分露出的至少一个侧面，并且包括凹部区域。相变层层叠在填充凹部的加热电极上。存储器件可以使相变层和加热电极的接触面积最大化，从而大大降低功耗。

3. 发明申请

US20050170586A1 Method of manufacturing non-volatile DRAM 审中-公开
标题翻译：制造非易失性DRAM的方法
公开(公告)号：US20050170586A1
公开(公告)日：2005-08-04
申请号：US10820189
申请日：2004-04-06
申请人： Kyu Choi
发明人： Kyu Choi
IPC分类号： G11C11/34 , G11C11/405 , G11C14/00 , G11C16/04 , H01L21/8239 , H01L21/8242 , H01L27/105 , H01L27/108
CPC分类号： G11C16/0425 , G11C11/405 , G11C14/00 , G11C14/0018 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/10894
摘要： A method of forming a non-volatile DRAM includes, in part, forming a first polysilicon layer above a first dielectric layer to form a control gate of the non-volatile device disposed in the non-volatile DRAM, forming sidewall spacers adjacent the first polysilicon layer, forming a second polysilicon layer that forms a guiding gate of the non-volatile device disposed in the non-volatile DRAM and a gate of an MOS transistor disposed in the non-volatile DRAM, delivering first implants to the body region to form lightly doped areas in the body region, delivering second implants to the body region to define source and drain regions, forming second sidewall spacers above the body region to define regions receiving lightly dopes implants and to define a conducting region of a capacitor disposed in the non-volatile DRAM.
摘要翻译：形成非易失性DRAM的方法部分地包括在第一介电层上形成第一多晶硅层以形成设置在非易失性DRAM中的非易失性器件的控制栅极，形成邻近第一多晶硅的侧壁间隔物形成第二多晶硅层，其形成设置在非易失性DRAM中的非易失性器件的引导栅极和设置在非易失性DRAM中的MOS晶体管的栅极，将第一植入物递送到身体区域以形成轻微的在身体区域中的掺杂区域，将第二植入物递送到身体区域以限定源极和漏极区域，在身体区域上方形成第二侧壁间隔，以限定接收轻度掺杂植入物的区域，并且限定设置在非区域中的电容器的导电区域，易失性DRAM。

4. 发明申请

US20060007772A1 Non-volatile memory device 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20060007772A1
公开(公告)日：2006-01-12
申请号：US11189548
申请日：2005-07-25
申请人： Kyu Choi
发明人： Kyu Choi
IPC分类号： G11C8/02
CPC分类号： G11C14/00
摘要： A non-volatile memory device includes a guiding gate that extends along a first portion of the device's channel length and a control gate that extends along a second portion of the device's channel length. The first and second portions of the channel length do not overlap. The guiding gate, which overlays the substrate above the channel region, is insulated from the semiconductor substrate in which the device is formed via an oxide layer. The channel region under the guiding gate has a doping concentration greater than the doping concentration of the substrate. The remaining portion of the channel region has a doping concentration greater than the doping concentration of the substrate but less than the doping concentration of the channel region under the guiding gate. The control gate, which also overlays the substrate above the channel region, is insulated from the substrate via an oxide-nitride-oxide layer.
摘要翻译：非易失性存储器件包括沿器件沟道长度的第一部分延伸的引导门和沿设备通道长度的第二部分延伸的控制栅极。通道长度的第一和第二部分不重叠。在通道区域上方覆盖衬底的引导栅极与通过氧化物层形成器件的半导体衬底绝缘。引导栅极下方的沟道区域的掺杂浓度大于衬底的掺杂浓度。沟道区的剩余部分的掺杂浓度大于衬底的掺杂浓度，但是小于引导栅下的沟道区的掺杂浓度。也在通道区域上方覆盖衬底的控制栅极通过氧化物 - 氮化物 - 氧化物层与衬底绝缘。

5. 发明申请

US20070238449A1 Service restriction apparatus and method for portable communication device 审中-公开
标题翻译：用于便携式通信设备的服务限制装置和方法
公开(公告)号：US20070238449A1
公开(公告)日：2007-10-11
申请号：US11729432
申请日：2007-03-28
申请人： Jeon Park , Kyu Choi , Jung Lee
发明人： Jeon Park , Kyu Choi , Jung Lee
IPC分类号： H04M3/42
CPC分类号： H04W48/02 , H04L63/0236 , H04L63/083 , H04M1/663 , H04M1/667 , H04M1/72577 , H04W4/00 , H04W8/26 , H04W12/00514 , H04W12/06 , H04W12/08 , H04W76/10
摘要： A service restriction apparatus and method for a portable phone. A utilization restriction method for a portable communication device includes determining whether a service restriction function is activated when an incoming or outgoing call request is detected; determining whether a phone number of the incoming or outgoing call is registered in a communication-allowed phone number list if a service restriction function is activated; attempting to process the incoming or outgoing call if the phone number is registered in the communication-allowed phone number list; and blocking the incoming or outgoing call if the phone number is not registered in the communication-allowed phone number list.
摘要翻译：一种用于便携式电话的服务限制装置和方法。一种用于便携式通信设备的利用限制方法包括：当检测到呼入或呼出呼叫请求时确定服务限制功能是否被激活; 如果启用了服务限制功能，则确定在通话允许的电话号码列表中是否登记了呼入或呼出电话的电话号码; 如果电话号码注册在通信允许的电话号码列表中，则尝试处理来电或去电; 如果电话号码没有注册在允许通信的电话号码列表中，则阻止呼入或拨出呼叫。

6. 发明申请

US20070242514A1 NAND-structured nonvolatile memory cell 审中-公开
标题翻译： NAND结构的非易失性存储单元
公开(公告)号：US20070242514A1
公开(公告)日：2007-10-18
申请号：US11373818
申请日：2006-03-10
申请人： David Choi , Kyu Choi
发明人： David Choi , Kyu Choi
IPC分类号： G11C11/34
CPC分类号： H01L27/115 , G11C16/0483 , H01L27/11521
摘要： A multitude of NAND flash memory cells coupled to a bit line of a NAND flash memory array includes, in part, a highly doped source region coupled to a first terminal and a highly doped drain region coupled to a second terminal of the multitude of cells. Each NAND memory cell includes, in part, a first gate layer and a second gate layer both adapted to receive a voltage. The second gate layers of the NAND flash memory cells are connected to one another.
摘要翻译：耦合到NAND闪速存储器阵列的位线的多个NAND快闪存储器单元部分地包括耦合到耦合到多个单元的第二端子的第一端子和高掺杂漏极区域的高掺杂源极区域。每个NAND存储器单元部分地包括适于接收电压的第一栅极层和第二栅极层。 NAND闪存单元的第二栅极层彼此连接。

7. 发明申请

US20060193174A1 Non-volatile and static random access memory cells sharing the same bitlines 审中-公开
标题翻译：共享相同位线的非易失性和静态随机存取存储单元
公开(公告)号：US20060193174A1
公开(公告)日：2006-08-31
申请号：US11067313
申请日：2005-02-25
申请人： David Choi , Eui Kwon , Kyu Choi
发明人： David Choi , Eui Kwon , Kyu Choi
IPC分类号： G11C11/34 , G11C14/00
CPC分类号： G11C14/00
摘要： A memory cell structure includes non-volatile as well as SRAM memory cells that share the same bitline and operate differentially. The SRAM cell includes first and second MOS transistors that are coupled to the same true and complementary bit lines that the non-volatile memory cells are coupled to. The non-volatile memory cells are erased prior to being programmed. Programming of the non-volatile memory cells may be carried out via hot-electron injection or Fowler-Nordheim tunneling. Data stored in the non-volatile memory cells may be transferred to the SRAM cell. The differential reading and writing of data reduces over-erase of the non-volatile devices.
摘要翻译：存储单元结构包括非易失性以及共享相同位线并且差分操作的SRAM存储器单元。 SRAM单元包括耦合到与非易失性存储单元耦合的相同真和互补位线的第一和第二MOS晶体管。在编程之前擦除非易失性存储单元。非易失性存储器单元的编程可以通过热电子注入或Fowler-Nordheim隧道进行。存储在非易失性存储单元中的数据可以被传送到SRAM单元。差分读取和写入数据减少了非易失性器件的过度擦除。

8. 发明申请

US20050219913A1 Non-volatile memory array 审中-公开
标题翻译：非易失性存储器阵列
公开(公告)号：US20050219913A1
公开(公告)日：2005-10-06
申请号：US10819669
申请日：2004-04-06
申请人： Kyu Choi , Sheau-suey Li
发明人： Kyu Choi , Sheau-suey Li
IPC分类号： G11C16/04 , G11C16/06 , G11C16/10
CPC分类号： G11C16/0425 , G11C16/0466 , G11C16/10
摘要： Each non-volatile memory cell of an array of includes a guiding gate extending along a first portion of the cell's channel and a control gate extending along a second portion of the cell's channel. The first and second portions of the channel do not overlap. The guiding gate, which overlays the substrate above the channel, is insulated from the substrate via an oxide layer. The control gate, which also overlays the substrate above the channel region, is insulated from the substrate via an oxide-nitride-oxide layer. Each row of the array has a first terminal coupled to the guiding gates, and a second terminal coupled to the control gates of the cells disposed in that row. Each column of the array has a first terminal coupled to the drain regions, and a second terminal coupled to the source regions of the cells disposed in that column.
摘要翻译：阵列的每个非易失性存储单元包括沿单元通道的第一部分延伸的引导门和沿着单元通道的第二部分延伸的控制栅。通道的第一和第二部分不重叠。引导栅极覆盖通道上方的衬底，通过氧化物层与衬底绝缘。也在通道区域上方覆盖衬底的控制栅极经由氧化物 - 氮化物 - 氧化物层与衬底绝缘。阵列的每一列具有耦合到引导栅极的第一端子，以及耦合到设置在该行中的单元的控制栅极的第二端子。阵列的每列具有耦合到漏极区的第一端子和耦合到设置在该列中的单元的源极区域的第二端子。

9. 发明申请

US20050004771A1 Apparatus for measuring fruit properties including a function for automatically controlling the intensity of light from a light source 失效
标题翻译：用于测量水果特性的装置，包括用于自动控制来自光源的光的强度的功能
公开(公告)号：US20050004771A1
公开(公告)日：2005-01-06
申请号：US10484692
申请日：2001-10-26
申请人： Kang Lee , Kyu Choi , Dong Choi , Soo Lee , Ki Lee
发明人： Kang Lee , Kyu Choi , Dong Choi , Soo Lee , Ki Lee
IPC分类号： G01N33/02 , G01N21/35 , G01N31/00
CPC分类号： G01N33/025 , G01N21/3563 , G01N21/359 , Y10S250/91
摘要： An apparatus for measuring fruit properties, in order to classify fruit according to internal qualities, measures the sweetness of a fruit sample using near-infrared spectroscopy. The apparatus includes a pair of waveguides (12), a pair of optic emitter/sensor assemblies (14), a light-interrupting unit (20), and a light detector (40). The light detector calculates the intensity of light, transmitted from a light source and received by the optical emitter/sensor assemblies, thus allowing spectral analysis and interpretation for the determination of sweetness and acidity of a variety of fruits. The light detector controls the light-interrupting unit to interrupt the optical path when the light intensity is reduced. The apparatus is suitable for use in an automated line, for effective and reliable measurement of internal fruit properties, to improve operational efficiency and precision in fruit selection.
摘要翻译：用于测量水果性质的装置，以便根据内部品质对水果进行分类，使用近红外光谱测量水果样品的甜度。该装置包括一对波导（12），一对光发射器/传感器组件（14），光中断单元（20）和光检测器（40）。光检测器计算从光源传输并由光发射器/传感器组件接收的光的强度，从而允许光谱分析和解释以确定各种水果的甜度和酸度。当光强度降低时，光检测器控制光中断单元中断光路。该设备适用于自动化生产线，有效和可靠地测量内部果实的性质，以提高果实选择的操作效率和精度。

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