会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Method for fabricating a back contact solar cell
    • 背接触太阳能电池的制造方法
    • US08461011B2
    • 2013-06-11
    • US13519249
    • 2011-01-18
    • Min Sung JeonWon Jae LeeEun Chel ChoJoon Sung Lee
    • Min Sung JeonWon Jae LeeEun Chel ChoJoon Sung Lee
    • H01L21/20
    • H01L31/1804H01L31/02363H01L31/0682Y02E10/547Y02P70/521
    • The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.
    • 本发明涉及背电极型太阳能电池的制造方法。 本文公开的背面电极型太阳能电池的制造方法包括:背面电极型太阳能电池的制造方法,其包括:准备n型结晶硅基板; 在所述基板的前表面,背面和侧面上形成热扩散控制膜; 通过将p型杂质离子注入到衬底的背面上来形成p型杂质区; 图案化热扩散控制膜,使得衬底的背面被选择性地暴露; 以及通过进行热扩散处理在所述基板的背面的露出区域和所述基板的前表面处形成低浓度前场层(n),形成高浓度背景层(n +),以及 通过激活p型杂质区域形成p +发射极区域。
    • 9. 发明授权
    • Method for forming SBT ferroelectric thin film
    • 形成SBT铁电薄膜的方法
    • US6090455A
    • 2000-07-18
    • US128938
    • 1998-08-05
    • Ho Gi KimWon Jae LeeSoon Gil YoonJoon Hyung Ahn
    • Ho Gi KimWon Jae LeeSoon Gil YoonJoon Hyung Ahn
    • C23C16/40C23C16/50H05H1/20
    • C23C16/40
    • A method for forming SBT ferroelectric thin film. Sr(C.sub.5 F.sub.6 HO.sub.2).sub.2, Bi(C.sub.6 H.sub.5).sub.3 and Ta(C.sub.2 H.sub.5 O).sub.5 are used as the precursors of Sr, Bi and Ta and bubbled at a temperature of 110-130.degree. C., 140-160.degree. C., and 120-140.degree. C., respectively. The deposition of the precursors on a substrate is carried out at 500-550.degree. C. in plasma by using an RF power of 100-150 W. Having a residual polarity (Pr) of 15 .mu.C/cm.sup.2 or higher and a coercive electric field (Ec) of 50 kV/cm or less and, the SBT ferroelectric thin film does not show a fatigue phenomenon until 1.times.10.sup.11 cycles as measured under 6V bipolar square pulse in the structure comprising Pt upper and lower electrodes and thus, can be applied for non-volatile memory devices.
    • 一种形成SBT铁电薄膜的方法。 Sr(C5F6HO2)2,Bi(C6H5)3和Ta(C2H5O)5用作Sr,Bi和Ta的前体,在110-130℃,140-160℃,120 -140℃。 通过使用100-150W的RF功率,在等离子体中在500-550℃下在基板上沉积前体。残留极性(Pr)为15μC/ cm 2以上,矫顽电 (Ec)为50kV / cm以下,SBT铁电薄膜在由Pt上下电极构成的6V双极性方波脉冲下测定的1×10 11个循环之前不显示疲劳现象,因此可以应用于 非易失性存储器件。