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1. 发明授权

US6090455A Method for forming SBT ferroelectric thin film 失效
标题翻译：形成SBT铁电薄膜的方法
公开(公告)号：US6090455A
公开(公告)日：2000-07-18
申请号：US128938
申请日：1998-08-05
申请人： Ho Gi Kim , Won Jae Lee , Soon Gil Yoon , Joon Hyung Ahn
发明人： Ho Gi Kim , Won Jae Lee , Soon Gil Yoon , Joon Hyung Ahn
IPC分类号： C23C16/40 , C23C16/50 , H05H1/20
CPC分类号： C23C16/40
摘要： A method for forming SBT ferroelectric thin film. Sr(C.sub.5 F.sub.6 HO.sub.2).sub.2, Bi(C.sub.6 H.sub.5).sub.3 and Ta(C.sub.2 H.sub.5 O).sub.5 are used as the precursors of Sr, Bi and Ta and bubbled at a temperature of 110-130.degree. C., 140-160.degree. C., and 120-140.degree. C., respectively. The deposition of the precursors on a substrate is carried out at 500-550.degree. C. in plasma by using an RF power of 100-150 W. Having a residual polarity (Pr) of 15 .mu.C/cm.sup.2 or higher and a coercive electric field (Ec) of 50 kV/cm or less and, the SBT ferroelectric thin film does not show a fatigue phenomenon until 1.times.10.sup.11 cycles as measured under 6V bipolar square pulse in the structure comprising Pt upper and lower electrodes and thus, can be applied for non-volatile memory devices.
摘要翻译：一种形成SBT铁电薄膜的方法。 Sr（C5F6HO2）2，Bi（C6H5）3和Ta（C2H5O）5用作Sr，Bi和Ta的前体，在110-130℃，140-160℃，120 -140℃。通过使用100-150W的RF功率，在等离子体中在500-550℃下在基板上沉积前体。残留极性（Pr）为15μC/ cm 2以上，矫顽电（Ec）为50kV / cm以下，SBT铁电薄膜在由Pt上下电极构成的6V双极性方波脉冲下测定的1×10 11个循环之前不显示疲劳现象，因此可以应用于非易失性存储器件。

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