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1. 发明申请

US20070123666A1 Polymerization methods using the catalysts 有权
公开(公告)号：US20070123666A1
公开(公告)日：2007-05-31
申请号：US11581470
申请日：2006-10-17
申请人： Young Chung , Il Jung , Sung Chun , Young Park , Dai Choi , Sung Yoon , TaeSun Lim , Jungmin Lee
发明人： Young Chung , Il Jung , Sung Chun , Young Park , Dai Choi , Sung Yoon , TaeSun Lim , Jungmin Lee
IPC分类号： C08F4/80
CPC分类号： C08F4/70 , C08F32/08
摘要： Provided is a method of preparing a cyclic olefin polymer by addition polymerization of a cyclic olefin monomer, the method including contacting a metal catalyst complex represented by Formula 1 below with a cyclic olefin monomer represented by Formula 2 below: [M(L1)x(L′2)y(L3)z]a[Ani]b wherein M is a Group X metal; [M(L1)x(L′2)y(L3)z] is a cationic complex; L1 is an anionic hydrocarbyl-containing ligand; L′2 is a neutral ligand; L3 is an N-heterocyclic carbene ligand; [Ani] is an anion capable of weakly coordinating with the metal M; x is 1 or 2; y is 0 to 4; z is 1 or 2; 2≦x+y+z≦6; a and b are respectively the number of cations and the number of anions capable of weakly coordinating with the metal M and are each a number of 1-10 which is used to satisfy the net charge balance of the metal catalyst complex, and wherein for each of L1, L′2, and L3, when a plurality of ligands are present in a molecule of the metal catalyst complex, the ligands may be the same or different, and wherein m is an integer of 0 to 4; and R7, R′7, R″7, and R″′7 are each independently a polar functional group or a nonpolar functional group. According to the method of the present invention, a high molecular weight cyclic olefin addition polymer can be produced in a high yield even when using a polar functional group-containing cyclic olefin monomer. A polymer produced using the method shows good thermal stability.

2. 发明申请

US20070093624A1 Catalysts for polymerizing cyclic olefin 有权
标题翻译：用于聚合环烯烃的催化剂
公开(公告)号：US20070093624A1
公开(公告)日：2007-04-26
申请号：US11542166
申请日：2006-10-04
申请人： Young Chung , Il Jung , Sung Chun , Young Park , Sung Yoon , TaeSun Lim , Jungmin Lee , Dai Choi
发明人： Young Chung , Il Jung , Sung Chun , Young Park , Sung Yoon , TaeSun Lim , Jungmin Lee , Dai Choi
IPC分类号： C08F4/80
CPC分类号： C07F15/006 , C08F4/7034 , C08F4/80
摘要： Provided is a metal catalyst complex for preparing a cyclic olefin-based polymer by addition polymerization of a cyclic olefin-based monomer, which is represented by Formula 1 below: [M(L1)x(L′2)y(L3)z]a[Ani]b wherein M is a Group X metal; [M(L1)x(L′2)y(L3)z] is a cationic precatalyst; L1 is an anionic hydrocarbyl-containing ligand; L′2 is a neutral ligand; L3 is an N-heterocyclic carbene ligand; [Ani] is an anion capable of weakly coordinating with the metal M; x is 1 or 2; y is 0 to 4; z is 1 or 2; 2≦x+y+z≦6; a and b are each 1 to 10. The metal catalyst complex has an N-heterocyclic carbene ligand, and thus, is excellent in thermal stability and reactivity.
摘要翻译：本发明提供一种通过下述式1表示的环状烯烃系单体的加成聚合制备环状烯烃系聚合物的金属催化剂配合物：＆lt;线内配方说明=“在线式”末端= “铅”？> [M（L 1）（L'2 ）（L _{（L 3）（L 3 >）Z是阳离子预催化剂; L 1是含阴离子烃基的配体; L'2是中性配体; L 3是N-杂环卡宾配体; [Ani]是能够与金属M弱配位的阴离子; x为1或2; y为0〜4; z为1或2; 2 <= x + y + z <= 6; a和b各自为1〜10。金属催化剂配合物具有N-杂环卡宾配体，因此具有优异的热稳定性和反应性。}

3. 发明申请

US20060058477A1 Catalyst system for polymerizing cyclic olefin having polar functional group, polymerizing method using the catalyst system, olefin polymer produced by the method and optical anisotropic film comprising the olefin polymer 有权
标题翻译：用于聚合具有极性官能团的环烯烃的催化剂体系，使用催化剂体系的聚合方法，通过该方法制备的烯烃聚合物和包含烯烃聚合物的光学各向异性膜
公开(公告)号：US20060058477A1
公开(公告)日：2006-03-16
申请号：US11227093
申请日：2005-09-16
申请人： Sung Yoon , Young Won , Young Park , Sung Chun , Dai Choi , Won Kim , Taesun Lim , Heon Kim , Jung Lee , Kyung Paik
发明人： Sung Yoon , Young Won , Young Park , Sung Chun , Dai Choi , Won Kim , Taesun Lim , Heon Kim , Jung Lee , Kyung Paik
IPC分类号： C08F4/06 , B01J31/00
CPC分类号： C08F4/70
摘要： A catalyst system capable of producing a cyclic olefin polymer having a polar functional group and a high molecular weight with a high yield in which a catalyst is not deactivated due to polar functional groups of monomers, and a method of producing polymers using the same are provided. The catalyst system for polymerization of olefin according to the present invention has good thermal and chemical stability, and thus, in the method of preparing polyolefin using the catalyst system, the deactivation of a catalyst due to a polar functional group of the monomer can be prevented, and thus a high yield of the cyclic olefin polymer with a high molecular weight can be obtained when a ratio of the catalyst to the monomer is 1:5000, and the removal of a catalyst residue is not required.
摘要翻译：提供一种催化剂体系，其能够制备具有极性官能团和高分子量的环状烯烃聚合物，其高产率，其中由于单体的极性官能团而不使催化剂失活，以及使用其制备聚合物的方法。本发明的烯烃聚合用催化剂体系具有良好的热稳定性和化学稳定性，因此在使用该催化剂体系的聚烯烃的制造方法中，可以防止由于单体的极性官能团引起的催化剂的失活因此，当催化剂与单体的比例为1:5000时，可以获得高产率的具有高分子量的环状烯烃聚合物，并且不需要除去催化剂残余物。

4. 发明申请

US20070027277A1 Method of preparing phosphonium compound for cyclic olefin polymerization 有权
标题翻译：制备环烯烃聚合的鏻化合物的方法
公开(公告)号：US20070027277A1
公开(公告)日：2007-02-01
申请号：US11492059
申请日：2006-07-25
申请人： Sungcheol Yoon , Young Won , Young Park , Sung Chun , Dai Choi
发明人： Sungcheol Yoon , Young Won , Young Park , Sung Chun , Dai Choi
IPC分类号： C08F4/80 , C07F9/02
CPC分类号： C07F9/5435 , C07F9/5407
摘要： Provided is a method of preparing a phosphonium compound by reacting a protic phosphonium compound represented by [(R1)—P(R2)a(R2′)b]HX and a salt compound represented by [C][Ani]. Therefore, a phosphonium compound used as a cocatalyst for the preparation of a polar cyclic olefin polymer can be produced at high yield.
摘要翻译：本发明提供一种通过使由[（R 1'） - P（R 2）N a表示的质子鏻化合物反应制备鏻化合物的方法。（R 2'）b H]和由[C] [Ani]表示的盐化合物。因此，可以以高收率制造用作制备极性环烯烃聚合物的助催化剂的鏻化合物。

5. 发明申请

US20070133272A1 Phase change memory device having semiconductor laser unit 有权
标题翻译：具有半导体激光器单元的相变存储器件
公开(公告)号：US20070133272A1
公开(公告)日：2007-06-14
申请号：US11635279
申请日：2006-12-07
申请人： Byoung Yu , Seung Lee , Sangouk Ryu , Sung Yoon , Young Park , Kyu Choi , Nam Lee
发明人： Byoung Yu , Seung Lee , Sangouk Ryu , Sung Yoon , Young Park , Kyu Choi , Nam Lee
IPC分类号： G11C11/00
CPC分类号： H01L45/1213 , G11C13/0004 , G11C13/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/1666
摘要： Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
摘要翻译：提供了一种相变存储器件，包括：相变存储器单元，包括相变层图案; 激光束聚焦单元将激光束局部聚焦在相变存储单元的相变层图案上; 以及向激光束聚焦单元产生并发射激光束的半导体激光器单元。因此，相变存储器件中的设定或复位操作使用局部施加的激光束，从而在单位电池的操作期间降低消耗功率并防止存储在相邻单元中的信息的破坏或改变。

6. 发明申请

US20070025226A1 Phase change memory device and method of manufacturing the same 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20070025226A1
公开(公告)日：2007-02-01
申请号：US11490405
申请日：2006-07-20
申请人： Young Park , Sang Ryu , Sung Yoon , Nam Lee , Kyu Choi , Seung Lee , Byoung Yu
发明人： Young Park , Sang Ryu , Sung Yoon , Nam Lee , Kyu Choi , Seung Lee , Byoung Yu
IPC分类号： G11B7/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Provided are a phase change memory device and a method of fabricating the same capable of maximizing a contact area of a phase change layer and a heating electrode. The memory device includes a heating electrode and a phase change layer. The heating electrode covers at least one side exposed by a pore and a portion of a surface of a lower electrode and includes a recess region. The phase change layer is stacked on the heating electrode filling up the recess region. The memory device may maximize a contact area of the phase change layer and the heating electrode, thereby greatly reducing power consumption.
摘要翻译：提供一种相变存储器件及其制造方法，其能够最大化相变层和加热电极的接触面积。存储装置包括加热电极和相变层。加热电极覆盖由孔隙和下部电极的表面的一部分露出的至少一个侧面，并且包括凹部区域。相变层层叠在填充凹部的加热电极上。存储器件可以使相变层和加热电极的接触面积最大化，从而大大降低功耗。

7. 发明申请

US20070173010A1 Embedded phase-change memory and method of fabricating the same 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US20070173010A1
公开(公告)日：2007-07-26
申请号：US11633216
申请日：2006-12-04
申请人： Seung-Yun Lee , Sangouk Ryu , Sung Yoon , Young Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Sangouk Ryu , Sung Yoon , Young Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： G11C19/08 , H01L21/8249 , H01L31/00 , H01L31/117
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

8. 发明申请

US20080064687A1 Novel thiourea derivatives and the pharmaceutical compositions containing the same 有权
标题翻译：新型硫脲衍生物和含有它们的药物组合物
公开(公告)号：US20080064687A1
公开(公告)日：2008-03-13
申请号：US11727413
申请日：2007-03-26
申请人： Young Suh , Uh Oh , Hee Kim , Jee Lee , Hyeung Park , Ok Park , Yong Lee , Young Park , Yung Joo , Jin Choi , Kyung Lim , Sun Kim , Jin Kim , Hyun Koh , Joo Moh , Yeon Jeong , Jung Yi , Young Oh
发明人： Young Suh , Uh Oh , Hee Kim , Jee Lee , Hyeung Park , Ok Park , Yong Lee , Young Park , Yung Joo , Jin Choi , Kyung Lim , Sun Kim , Jin Kim , Hyun Koh , Joo Moh , Yeon Jeong , Jung Yi , Young Oh
IPC分类号： C07C335/02 , A61K31/155 , A61K31/17 , A61K31/215 , A61K31/341 , A61K31/381 , A61K31/40 , A61K31/403 , A61K31/415 , A61K31/425 , A61K31/44 , A61K31/4965 , A61K31/497 , A61K31/5375 , A61K31/54 , A61P1/00 , A61P11/00 , A61P25/00 , C07D403/02 , C07D333/22 , C07D307/02 , C07D279/12 , C07D279/06 , C07D277/30 , C07D265/30 , C07D241/04 , C07D231/56 , C07D211/70 , C07D209/18 , C07D207/30 , A61P9/00 , C07C257/00 , C07C275/18
CPC分类号： C07D333/42 , C07C311/08 , C07C311/47 , C07C333/20 , C07C335/12 , C07C335/14 , C07C335/20 , C07C335/26 , C07C2601/14 , C07C2602/10 , C07D207/323 , C07D207/416 , C07D207/42 , C07D209/08 , C07D209/14 , C07D213/40 , C07D213/61 , C07D213/76 , C07D217/06 , C07D231/14 , C07D231/56 , C07D233/64 , C07D235/14 , C07D239/42 , C07D241/12 , C07D241/24 , C07D277/28 , C07D295/13 , C07D295/215 , C07D295/32 , C07D307/52 , C07D311/58 , C07D317/58 , C07D333/20
摘要： The present invention relates to novel thiourea derivatives as a modulator for vanilloid receptor (VR) and the pharmaceutical compositions containing the same. As diseases associated with the activity of vanilloid receptor, pain acute pain, chronic pain, neuropathic pain, post-operative pain, migraine, arthralgia, neuropathies, nerve injury, diabetic neuropathy, neurodegeneration, neurotic skin disorder, stroke, urinary bladder hypersensitiveness, irritable bowel syndrome, a respiratory disorder such as asthma or chronic obstructive pulmonary disease, irritation of skin, eye or mucous membrane, fervescence, stomach-duodenal ulcer, inflammatory bowel disease and inflammatory diseases can be enumerated. The present invention provides a pharmaceutical composition for prevention or treatment of these diseases.
摘要翻译：本发明涉及作为香草素受体（VR）的调节剂的新型硫脲衍生物以及含有它们的药物组合物。作为与香草素受体活动有关的疾病，疼痛急性疼痛，慢性疼痛，神经性疼痛，手术后疼痛，偏头痛，关节痛，神经病变，神经损伤，糖尿病性神经病变，神经变性，神经性皮肤病，中风，膀胱过敏反应，易怒肠综合征，哮喘或慢性阻塞性肺疾病等呼吸系统疾病，皮肤，眼睛或粘膜的刺激，发热，胃十二指肠溃疡，炎性肠病和炎症性疾病。本发明提供了用于预防或治疗这些疾病的药物组合物。

9. 发明申请

US20080044567A1 Method of Depositing Thin Film 失效
标题翻译：沉积薄膜的方法
公开(公告)号：US20080044567A1
公开(公告)日：2008-02-21
申请号：US11571547
申请日：2005-12-14
申请人： Tae Seo , Young Park , Ki Lee , Sahng Lee
发明人： Tae Seo , Young Park , Ki Lee , Sahng Lee
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76861
摘要： Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited. If it is possible to continuously deposit Ti/TiN thin films on 1-6 substrates in one chamber, it is possible to set only one chamber among 4 chambers in a PM period, thereby an operating ratio of a cluster tool can be significantly improved. When Ti/TiN is continuously deposited in one chamber, the time needed to move a substrate from a Ti chamber to a TiN chamber is reduced, thus treatment efficiency of the substrate per unit time is significantly increased.
摘要翻译：公开了一种沉积薄膜的方法，其中薄膜连续地沉积到一个室中，并且将1-6个晶片装入室中。在该方法中，能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。该方法包括：（a）将至少一个衬底装载到腔室中，（b）将Ti薄膜沉积到衬底上，进行调整，使得保持第一工艺间隙;（c）移动晶片块使得第一工艺间隙改变为第二工艺间隙，以便控制沉积Ti薄膜的衬底的工艺间隙，（d）将TiN薄膜沉积到衬底上，移动以设定第二工艺间隙，（e）卸载沉积有Ti / TiN薄膜的基板。如果可以在一个室中的1-6个基板上连续沉积Ti / TiN薄膜，则可以在PM周期内在4个室中仅设置一个室，从而可以显着提高簇工具的运行比。当在一个室中连续沉积Ti / TiN时，将衬底从Ti室移动到TiN室所需的时间减少，因此每单位时间衬底的处理效率显着提高。

10. 发明申请

US20070152655A1 Handler for testing semiconductor devices 失效
公开(公告)号：US20070152655A1
公开(公告)日：2007-07-05
申请号：US11713683
申请日：2007-03-05
申请人： Chul Ham , Ho Song , Young Park , Woo Lim , Jae Seo
发明人： Chul Ham , Ho Song , Young Park , Woo Lim , Jae Seo
IPC分类号： G01R31/28
CPC分类号： G01R31/2893 , G01R31/2867
摘要： A handler for testing semiconductor devices is disclosed which is capable of simplifying the process carried out in an exchanging station, namely, the process of loading/unloading semiconductor devices in/from test trays, and greatly increasing the number of simultaneously testable semiconductor devices. The handler includes a loading station, an unloading station, test trays, an exchanging station comprising a horizontal moving unit for horizontally moving a selected one of the test trays by a predetermined pitch at a working place, a test station in which at least one test board having a plurality of test sockets to be electrically connected with semiconductor devices is mounted, the test station performing a test while connecting the semiconductor devices in one of the test trays, which is fed from the exchanging station to the test station, to the test sockets, device transfer units for transfer the semiconductor devices between the loading station and the exchanging station and between the exchanging station and the unloading station, respectively, and a tray transfer unit for transfer the test trays between the exchanging station and the test station.

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