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1. 发明授权

US5793061A Group-III nitride based light emitter 失效
标题翻译： III族氮化物基发光体
公开(公告)号：US5793061A
公开(公告)日：1998-08-11
申请号：US703482
申请日：1996-08-28
申请人： Youichiro Ohuchi , Hiroaki Okagawa , Shinichi Watabe , Kazuyuki Tadatomo
发明人： Youichiro Ohuchi , Hiroaki Okagawa , Shinichi Watabe , Kazuyuki Tadatomo
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32
摘要： A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer. The diode having a diffusion suppressive layer of the present invention has higher luminous intensity, greater forward voltage, and longer lifetime than the conventional diodes.
摘要翻译：一种III族氮化物基发光体，例如LED和LD，其具有双异质结构，并且在p型包覆层和有源层之间包括扩散抑制层。具有本发明的扩散抑制层的二极管具有比常规二极管更高的发光强度，更大的正向电压和更长的寿命。

2. 发明授权

US5770887A Gan single crystal 失效
公开(公告)号：US5770887A
公开(公告)日：1998-06-23
申请号：US320263
申请日：1994-10-11
申请人： Kazuyuki Tadatomo , Shinichi Watabe , Hiroaki Okagawa , Kazumasa Hiramatsu
发明人： Kazuyuki Tadatomo , Shinichi Watabe , Hiroaki Okagawa , Kazumasa Hiramatsu
IPC分类号： C30B25/02 , H01L33/00 , H01L33/32 , C30B35/00 , H01L29/14
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/0075 , H01L33/0079
摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

3. 发明授权

US5810925A GaN single crystal 失效
标题翻译： GaN单晶
公开(公告)号：US5810925A
公开(公告)日：1998-09-22
申请号：US649492
申请日：1996-05-17
申请人： Kazuyuki Tadatomo , Shinichi Watabe , Hiroaki Okagawa , Kazumasa Hiramatsu
发明人： Kazuyuki Tadatomo , Shinichi Watabe , Hiroaki Okagawa , Kazumasa Hiramatsu
IPC分类号： C30B25/02 , H01L33/00 , H01L33/32
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/0075 , H01L33/0079
摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.
摘要翻译：双晶X射线摇摆曲线半峰全宽为5〜250秒，厚度为80μm以上的GaN单晶，具有优异品质的GaN单晶的制造方法和足够的厚度允许其用作基板和具有高亮度和高可靠性的半导体发光元件，其包括作为基板的具有优异质量和/或足够厚度的GaN单晶，其允许其用作基板。

4. 发明授权

US5631475A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US5631475A
公开(公告)日：1997-05-20
申请号：US498752
申请日：1995-07-06
申请人： Shinichi Watabe , Hiroaki Okagawa , Takayuki Hashimoto , Kazuyuki Tadatomo
发明人： Shinichi Watabe , Hiroaki Okagawa , Takayuki Hashimoto , Kazuyuki Tadatomo
IPC分类号： H01L29/205 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/30
摘要： A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m. According to the present invention, absorption of the emitted light by an electrode contact layer and the occurrence of an interfacial distortion between the electrode contact layer and the layer thereunder can be suppressed, and a semiconductor light emitting element permitting easy production thereof and having a high luminance and a long service life can be provided.
摘要翻译：一种半导体发光元件，包括形成在GaAs衬底上的AlGaInP有源层和AlGaInP包层的发光部分，以及AlGaAs层和GaxIn1-xP层（0.7≤x≤1.0）以上述顺序沉积在所述发光部分上，其中所述GaxIn1-xP层的厚度不大于1.0μm。根据本发明，可以抑制由电极接触层吸收发射的光，并且可以抑制电极接触层与其下面的层之间的界面变形的发生，并且可以容易地制造并具有高的半导体发光元件可以提供亮度和长的使用寿命。

5. 发明授权

US5414281A Semiconductor light emitting element with reflecting layers 失效
标题翻译：具有反射层的半导体发光元件
公开(公告)号：US5414281A
公开(公告)日：1995-05-09
申请号：US111508
申请日：1993-08-25
申请人： Shinichi Watabe , Tadatomo Kazuyuki , Hiroaki Okagawa
发明人： Shinichi Watabe , Tadatomo Kazuyuki , Hiroaki Okagawa
IPC分类号： H01L33/00 , H01L33/10 , H01L33/28 , H01L33/30 , H01L33/38 , H01L33/40
CPC分类号： H01L33/30 , H01L33/0087 , H01L33/10 , H01L33/28 , H01L33/405
摘要： A semiconductor light emitting element comprising a semiconductor substrate having a lower electrode on its back, a pn junction, a first light reflecting layer disposed between the substrate and the pn junction, an upper electrode, and a second light reflecting layer disposed between the pn junction and the upper electrode, the second light reflecting layer being capable of substantially reflecting the light heading toward the upper electrode, which preferably has, between the pn junction and the second light reflecting layer, a semiconductor layer having a wider bandgap than that of a light emitting layer formed by said pn junction. The semiconductor light emitting element of the invention is advantageous in that the light absorption in the upper electrode can be inhibited to permit efficient output of the light heading toward the upper electrode from the element, and luminance can be greatly increased by the effective output of the light from the element.
摘要翻译：一种半导体发光元件，包括其背面具有下电极的半导体衬底，pn结，设置在衬底和pn结之间的第一光反射层，上电极和设置在pn结之间的第二光反射层并且上电极，第二光反射层能够基本反射朝向上电极的光，其优选地具有在pn结和第二光反射层之间的具有比光的带隙更宽的带隙的半导体层由所述pn结形成的发光层。本发明的半导体发光元件的优点在于，可以抑制上部电极中的光吸收，从而能够有效地输出从元件向上部电极的方向的输出，并且通过有效输出可以大大提高亮度元素的光。

6. 发明授权

US5169608A Inorganic article for crystal growth and liquid-phase epitaxy apparatus using the same 失效
标题翻译：用于晶体生长和液相外延装置的无机物
公开(公告)号：US5169608A
公开(公告)日：1992-12-08
申请号：US587900
申请日：1990-09-25
申请人： Shinichi Watabe , Hirotaka Ito , Tokuzo Sukegawa
发明人： Shinichi Watabe , Hirotaka Ito , Tokuzo Sukegawa
IPC分类号： C30B19/06 , C30B35/00
CPC分类号： C30B35/002 , C30B19/06
摘要： An inorganic article used as a container for holding a solution for crystal growth according to the present invention is provided by filling the pores of substrate having a porous inorganic structure with an inorganic material which has a melting point of 400.degree. to 900.degree. C. A liquid-phase epitaxy apparatus according to the present invention is comprised of a crucible made of the inorganic article or from a material selected from P-BN, quartz and sapphire and has an arrangement with less sliding contact. Thus, the dispersion of diffusive elements contained in a solution during the epitaxial growth is prevented. Accordingly, both the article and the apparatus of the present invention permit growth of crystals having high quality and less structural defects, thus contributing to the production of a semiconductor device made of materials having high vapor pressure.
摘要翻译：通过用熔点为400〜900℃的无机材料填充具有多孔无机结构的基材的孔，提供用作保持本发明的结晶生长溶液的容器的无机制品。根据本发明的液相外延装置包括由无机制品制成的坩埚或由选自P-BN，石英和蓝宝石的材料制成的坩埚，并具有滑动接触较少的布置。因此，防止在外延生长期间包含在溶液中的扩散元素的分散。因此，本发明的制品和装置允许生长具有高质量和较少结构缺陷的晶体，从而有助于制造由具有高蒸气压的材料制成的半导体器件。

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