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1. 发明授权

US5793061A Group-III nitride based light emitter 失效
标题翻译： III族氮化物基发光体
公开(公告)号：US5793061A
公开(公告)日：1998-08-11
申请号：US703482
申请日：1996-08-28
申请人： Youichiro Ohuchi , Hiroaki Okagawa , Shinichi Watabe , Kazuyuki Tadatomo
发明人： Youichiro Ohuchi , Hiroaki Okagawa , Shinichi Watabe , Kazuyuki Tadatomo
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32
摘要： A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer. The diode having a diffusion suppressive layer of the present invention has higher luminous intensity, greater forward voltage, and longer lifetime than the conventional diodes.
摘要翻译：一种III族氮化物基发光体，例如LED和LD，其具有双异质结构，并且在p型包覆层和有源层之间包括扩散抑制层。具有本发明的扩散抑制层的二极管具有比常规二极管更高的发光强度，更大的正向电压和更长的寿命。

2. 发明授权

US06734515B1 Semiconductor light receiving element 失效
标题翻译：半导体光接收元件
公开(公告)号：US06734515B1
公开(公告)日：2004-05-11
申请号：US09787502
申请日：2001-03-16
申请人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Masahiro Koto , Kazumasa Hiramatsu , Yutaka Hamamura , Sumito Shimizu
发明人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Masahiro Koto , Kazumasa Hiramatsu , Yutaka Hamamura , Sumito Shimizu
IPC分类号： H01L2714
CPC分类号： H01L31/0304 , H01L31/022408 , H01L31/1035 , H01L31/108 , Y02E10/544
摘要： A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode (2) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface (1a), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface (1a). In addition, when the light receiving element is of a photoconductive type, the aforementioned light receiving layer (1) is a first conductivity type i layer, and the aforementioned electrode (2) is an ohmic electrode of one polarity, and an ohmic electrode of the other polarity is formed directly or via a first conductivity type and low resistance GaN group semiconductor layer on the other surface of the light receiving layer (1).
摘要翻译：具有由GaN族半导体形成的受光层（1）的半导体光接收元件和形成在光接收层的一个表面上的光接收表面（1a）的电极（2），使得光（L）可以进入光接收层。当受光元件为肖特基势垒型时，上述电极（2）至少含有肖特基电极，其形成为在受光面（1a）上形成的边界线的总长度在被肖特基电极覆盖的区域和暴露区域之间的距离比受光面（1a）的外周长度长。此外，当光接收元件是光电导型时，上述光接收层（1）是第一导电型i层，上述电极（2）是一极性欧姆电极，欧姆电极另一极性直接或经由光接收层（1）的另一个表面上的第一导电类型和低电阻GaN族半导体层形成。

3. 发明授权

US06225650B1 GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof 失效
标题翻译：具有低位错密度的GAN基团晶体基体，其用途及其制造方法
公开(公告)号：US06225650B1
公开(公告)日：2001-05-01
申请号：US09046638
申请日：1998-03-24
申请人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Keiji Miyashita , Kazumasa Hiramatsu , Nobuhiko Sawaki , Katsunori Yahashi , Takumi Shibata
发明人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Keiji Miyashita , Kazumasa Hiramatsu , Nobuhiko Sawaki , Katsunori Yahashi , Takumi Shibata
IPC分类号： H01L310328
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02483 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/007 , H01L33/025 , H01S5/0213 , H01S5/22 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.
摘要翻译：一种GaN基晶体基底构件，包括基底衬底，掩模层，部分地覆盖所述基底衬底的表面以产生掩模区域，以及生长在其上的覆盖掩模层的GaN组晶体层，其部分地直接接触基底的非掩蔽区域，半导体元件的用途，其制造方法以及位错线的控制方法。本发明的制造方法能够使位于掩模区域或非掩蔽区域以上的GaN族晶体层的一部分具有低的位错密度。

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