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1. 发明授权

US08877101B2 Method of manufacturing a light emitting, power generating or other electronic apparatus 有权
标题翻译：制造发光，发电或其他电子设备的方法
公开(公告)号：US08877101B2
公开(公告)日：2014-11-04
申请号：US13223293
申请日：2011-08-31
申请人： Mark D. Lowenthal , William Johnstone Ray , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Brad Oraw , Jeffrey Baldridge , Eric Anthony Perozziello
发明人： Mark D. Lowenthal , William Johnstone Ray , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Brad Oraw , Jeffrey Baldridge , Eric Anthony Perozziello
IPC分类号： H01L33/20 , H01L23/00 , H01L51/52 , H01L51/56 , H01L25/04 , H01L27/32 , H01L33/38 , H01L21/683
CPC分类号： H01L27/3281 , H01L21/6836 , H01L24/24 , H01L24/95 , H01L25/048 , H01L27/142 , H01L27/15 , H01L27/301 , H01L27/32 , H01L31/03044 , H01L31/035281 , H01L31/0475 , H01L31/068 , H01L31/1876 , H01L33/005 , H01L33/20 , H01L33/38 , H01L33/382 , H01L51/42 , H01L51/52 , H01L51/5203 , H01L51/56 , H01L2224/24137 , H01L2224/32225 , H01L2224/73267 , H01L2224/95101 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/13033 , H01L2924/13034 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , Y02E10/544 , Y02E10/547 , Y02P70/521 , H01L2924/00 , H01L2924/00014
摘要： An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary method of fabricating an electronic device comprises: depositing one or more first conductors; and depositing a plurality of diodes suspended in a mixture of a first solvent and a viscosity modifier. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.
摘要翻译：二极管的液体或凝胶悬浮液的示例性可印刷组合物包括多个二极管，第一溶剂和/或粘度调节剂。制造电子设备的示例性方法包括：沉积一个或多个第一导体; 以及沉积悬浮在第一溶剂和粘度调节剂的混合物中的多个二极管。各种示例性二极管的高度为约10至50微米和约5至25微米之间的横向尺寸。其它实施方案还可以包括多个基本上化学惰性的颗粒，其尺寸范围在约10至约50微米之间。

2. 发明授权

US08809126B2 Printable composition of a liquid or gel suspension of diodes 有权
标题翻译：二极管液体或凝胶悬浮液的可打印组合物
公开(公告)号：US08809126B2
公开(公告)日：2014-08-19
申请号：US13223279
申请日：2011-08-31
申请人： Mark D. Lowenthal , William Johnstone Ray , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Brad Oraw , Jeffrey Baldridge , Eric Anthony Perozziello
发明人： Mark D. Lowenthal , William Johnstone Ray , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Brad Oraw , Jeffrey Baldridge , Eric Anthony Perozziello
IPC分类号： H01L21/00
CPC分类号： H01L51/0007 , B82Y20/00 , H01L24/95 , H01L25/048 , H01L25/0753 , H01L27/3281 , H01L31/0203 , H01L31/035236 , H01L31/105 , H01L31/1852 , H01L31/1856 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/56 , H01L51/0004 , H01L51/448 , H01L51/52 , H01L51/5203 , H01L51/5237 , H01L51/56 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/13033 , H01L2924/13034 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , Y02E10/544 , Y02E10/549 , H01L2924/00
摘要： An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. In other exemplary embodiments a second solvent is also included, and the composition has a viscosity substantially between about 100 cps and about 25,000 cps at about 25° C. In an exemplary embodiment, a composition comprises: a plurality of diodes or other two-terminal integrated circuits; one or more solvents comprising about 15% to 99.9% of any of N-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 1-methoxy-2-propanol, N-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof; a viscosity modifier comprising about 0.10% to 2.5% methoxy propyl methylcellulose resin or hydroxy propyl methylcellulose resin or mixtures thereof; and about 0.01% to 2.5% of a plurality of substantially optically transparent and chemically inert particles having a range of sizes between about 10 to about 50 microns.
摘要翻译：二极管的液体或凝胶悬浮液的示例性可印刷组合物包括多个二极管，第一溶剂和/或粘度调节剂。在其它示例性实施方案中，还包括第二溶剂，并且组合物在约25℃下的粘度基本上在约100cps至约25,000cps之间。在示例性实施方案中，组合物包含：多个二极管或其它两端集成电路; 一种或多种包含约15％至99.9％的任何N-丙醇，异丙醇，二丙二醇，二甘醇，丙二醇，1-甲氧基-2-丙醇，N-辛醇，乙醇，四氢糠醇，环己醇和其混合物的; 包含约0.10％至2.5％甲氧基丙基甲基纤维素树脂或羟基丙基甲基纤维素树脂或其混合物的粘度调节剂; 和约0.01％至2.5％的多个基本上光学透明和化学惰性的颗粒，其尺寸范围在约10至约50微米之间。

3. 发明授权

US08679903B2 Vertical quadruple conduction channel insulated gate transistor 有权
标题翻译：垂直四通导通绝缘栅晶体管
公开(公告)号：US08679903B2
公开(公告)日：2014-03-25
申请号：US11829514
申请日：2007-07-27
申请人： Richard A. Blanchard
发明人： Richard A. Blanchard
IPC分类号： H01L21/00 , H01L21/84 , H01L21/8238
CPC分类号： H01L21/26533 , H01L21/76243 , H01L29/4238 , H01L29/66666 , H01L29/7827 , H01L29/7831 , H01L29/78642
摘要： A method is provided for fabricating a vertical insulated gate transistor. A horizontal isolation region is formed in a substrate to separate and electrically isolate upper and lower portions of the substrate. A vertical semiconductor pillar with one or more flanks and a cavity is formed so as to rest on the upper portion, and a dielectrically isolated gate is formed so as to include an internal portion within the cavity and an external portion resting on the flanks and on the upper portion. One or more internal walls of the cavity are coated with an isolating layer and the cavity is filled with a gate material so as to form the internal portion of the gate within the cavity and the external portion of the gate that rests on the flanks, and to form two connecting semiconductor regions extending between source and drain regions of the transistor.
摘要翻译：提供一种用于制造垂直绝缘栅极晶体管的方法。在衬底中形成水平隔离区以分离和电隔离衬底的上部和下部。形成具有一个或多个侧面和空腔的垂直半导体柱，以便搁置在上部上，并且形成介电隔离的栅极，以便在空腔内包括内部部分，并且将外部部分搁置在侧面上，上部分。空腔的一个或多个内壁涂覆有隔离层，并且空腔填充有栅极材料，以便形成位于空腔内的栅极的内部部分和搁置在侧面上的栅极的外部部分，以及以形成在晶体管的源极和漏极区之间延伸的两个连接半导体区域。

4. 发明授权

US08513732B2 High voltage power MOSFET having low on-resistance 失效
公开(公告)号：US08513732B2
公开(公告)日：2013-08-20
申请号：US11342484
申请日：2006-01-30
申请人： Richard A. Blanchard
发明人： Richard A. Blanchard
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L21/2255 , H01L21/2257 , H01L22/26 , H01L29/0634 , H01L29/0649 , H01L29/66712 , H01L2924/0002 , H01L2924/00
摘要： A power MOSFET is provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. First and second body regions are located in the epitaxial layer and define a drift region between them. The body regions have a second conductivity type. First and second source regions of the first conductivity type are respectively located in the first and second body regions. A plurality of trenches are located below the body regions in the drift region of the epitaxial layer. The trenches, which extend toward the substrate from the first and second body regions, are filled with a material that includes a dopant of the second conductivity type. The dopant is diffused from the trenches into portions of the epitaxial layer adjacent the trenches.

5. 发明授权

US08415879B2 Diode for a printable composition 有权
公开(公告)号：US08415879B2
公开(公告)日：2013-04-09
申请号：US13223297
申请日：2011-08-31
申请人： Mark D. Lowenthal , William Johnstone Ray , Neil O. Shotton , Richard A. Blanchard , Brad Oraw
发明人： Mark D. Lowenthal , William Johnstone Ray , Neil O. Shotton , Richard A. Blanchard , Brad Oraw
IPC分类号： H01J1/62
CPC分类号： H01J1/62 , H01L21/561 , H01L24/24 , H01L24/83 , H01L24/97 , H01L25/048 , H01L31/0224 , H01L31/022408 , H01L31/028 , H01L31/0304 , H01L31/03044 , H01L31/035281 , H01L31/042 , H01L31/0475 , H01L31/048 , H01L31/0504 , H01L31/1852 , H01L31/1856 , H01L33/002 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/36 , H01L33/38 , H01L51/42 , H01L51/50 , H01L51/52 , H01L51/5203 , H01L51/56 , H01L2224/04105 , H01L2224/24051 , H01L2224/24101 , H01L2224/24137 , H01L2224/73267 , H01L2224/82138 , H01L2224/83851 , H01L2224/95101 , H01L2224/97 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/13033 , H01L2924/13034 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , Y02E10/544 , Y02P70/521 , H01L2924/00014 , H01L2224/83 , H01L2224/82 , H01L2924/00
摘要： An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns; a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns.

6. 发明授权

US08395568B2 Light emitting, photovoltaic or other electronic apparatus and system 有权
标题翻译：发光，光伏或其他电子设备和系统
公开(公告)号：US08395568B2
公开(公告)日：2013-03-12
申请号：US12560334
申请日：2009-09-15
申请人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
发明人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
IPC分类号： H01L33/00
CPC分类号： H01L33/00 , B82Y20/00 , B82Y30/00 , H01L21/30 , H01L27/142 , H01L27/156 , H01L27/32 , H01L27/3281 , H01L31/0232 , H01L31/028 , H01L31/0304 , H01L31/03044 , H01L31/0328 , H01L31/0352 , H01L31/035281 , H01L31/0475 , H01L31/05 , H01L31/0504 , H01L31/0508 , H01L31/0512 , H01L31/0543 , H01L31/0547 , H01L31/068 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/58 , H01L33/60 , H01L33/62 , H01L51/0096 , H01L51/447 , H01L51/52 , H01L51/5203 , H01L51/5265 , H01L51/5271 , H01L51/5275 , H01L51/56 , H01L2251/5369 , H01L2924/0002 , Y02E10/52 , Y02E10/547 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.
摘要翻译：本发明提供了一种电子设备，例如包括发光二极管（LED）的发光装置或包括可通过印刷工艺产生的光伏二极管的发电装置，其使用半导体或其它基板颗粒墨水或悬浮液，使用透镜颗粒墨水或悬浮液。示例性装置包括基座; 至少一个第一导体; 耦合到所述至少一个第一导体的多个基本球形或光学谐振二极管; 耦合到所述多个二极管的至少一个第二导体; 以及悬挂在连接或沉积在二极管上的聚合物中的多个基本上球形的透镜。透镜和悬浮聚合物具有不同的折射率。在一些实施例中，透镜和二极管具有在大约10:1和2:1之间的平均直径或长度的比率。二极管可以是LED或光伏二极管，并且在一些实施例中，具有至少部分地形成为半球形壳或盖的结。

7. 发明授权

US08330213B2 Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges 有权
标题翻译：具有包含永久电荷的嵌入介质层的功率半导体器件，方法和结构
公开(公告)号：US08330213B2
公开(公告)日：2012-12-11
申请号：US12759696
申请日：2010-04-13
申请人： Mohamed N. Darwish , Jun Zeng , Richard A. Blanchard
发明人： Mohamed N. Darwish , Jun Zeng , Richard A. Blanchard
IPC分类号： H01L29/423
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0634 , H01L29/0661 , H01L29/0873 , H01L29/0882 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/7802 , H01L29/7813 , H01L29/8611
摘要： Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
摘要翻译：使用重新焊接的沟槽的功率器件在其侧壁处或附近具有永久电荷。这些沟槽垂直延伸到漂移区域。

8. 发明申请

US20120211834A1 MULTI-LEVEL LATERAL FLOATING COUPLED CAPACITOR TRANSISTOR STRUCTURES 有权
标题翻译：多级横向浮动耦合电容器晶体管结构
公开(公告)号：US20120211834A1
公开(公告)日：2012-08-23
申请号：US13461646
申请日：2012-05-01
申请人： Robert Kuo-Chang Yang , Muhammed Ayman Shibib , Richard A. Blanchard
发明人： Robert Kuo-Chang Yang , Muhammed Ayman Shibib , Richard A. Blanchard
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L27/0733 , H01L29/0634 , H01L29/0653 , H01L29/0692 , H01L29/407 , H01L29/7835
摘要： A semiconductor device includes an active region having a first floating charge control structure and a termination region having a second floating charge control structure. The second floating charge control structure is at least twice as long as the first floating control structure.
摘要翻译：半导体器件包括具有第一浮动电荷控制结构的有源区和具有第二浮置电荷控制结构的端接区。第二浮动充电控制结构至少是第一浮动控制结构的两倍。

9. 发明授权

US08133768B2 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system 有权
标题翻译：制造发光，光伏或其他电子设备和系统的方法
公开(公告)号：US08133768B2
公开(公告)日：2012-03-13
申请号：US12560371
申请日：2009-09-15
申请人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
发明人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
IPC分类号： H01L21/20
CPC分类号： H01L21/20 , G09G3/32 , G09G2300/0426 , G09G2300/0439 , G09G2330/028 , H01L27/3281 , H01L31/035281 , H01L31/0475 , H01L31/0508 , H01L31/0512 , H01L31/068 , H01L51/0096 , H01L51/5012 , H01L51/5203 , H01L51/5275 , H01L51/56 , H01L2251/5369 , Y02E10/547
摘要： The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.
摘要翻译：本发明提供一种制造电子设备的方法，例如具有发光二极管（LED）的照明装置或具有光伏二极管的发电装置。示例性方法包括在基底的多个通道内沉积第一导电介质以形成多个第一导体; 在多个通道内沉积悬浮在载体介质中的多个半导体衬底颗粒; 在每个半导体衬底颗粒和第一导体之间形成欧姆接触; 将半导体衬底微粒转换为多个半导体二极管; 沉积第二导电介质以形成耦合到所述多个半导体二极管的多个第二导体; 以及在多个二极管上沉积或附着悬挂在第一聚合物中的多个透镜。在各种实施例中，沉积，成型，耦合和转换步骤由印刷工艺或通过印刷工艺进行。

10. 发明授权

US08049271B2 Power semiconductor device having a voltage sustaining layer with a terraced trench formation of floating islands 有权
标题翻译：功率半导体器件具有具有形成浮岛的梯形沟槽形式的电压维持层
公开(公告)号：US08049271B2
公开(公告)日：2011-11-01
申请号：US12772258
申请日：2010-05-03
申请人： Richard A. Blanchard , Jean-Michel Guillot
发明人： Richard A. Blanchard , Jean-Michel Guillot
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/0623 , H01L29/0634 , H01L29/66272 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7813
摘要： A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region. A filler material is deposited in the terraced trench to substantially fill the trench, thus completing the voltage sustaining region. At least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.
摘要翻译：提供了形成功率半导体器件的方法。该方法开始于提供第二导电类型的衬底，然后在衬底上形成电压维持区域。通过在衬底上沉积第一导电类型的外延层并在外延层中形成至少一个梯形沟槽形成电压维持区。梯形沟槽具有多个宽度不同的部分，以在其间限定至少一个环形凸缘。阻挡材料沿着沟槽的壁沉积。通过阻挡材料注入第二导电类型的掺杂剂，所述阻挡材料衬在环形凸缘和所述沟槽底部并进入外延层的相邻部分。掺杂剂扩散以在外延层中形成至少一个环形掺杂区域和位于环形掺杂区域下方的至少一个其它区域。填充材料沉积在梯形沟槽中以基本上填充沟槽，从而完成电压维持区域。在电压维持区域上形成第二导电类型的至少一个区域以限定它们之间的接合。

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