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    • 7. 发明授权
    • Magnetic disk and method of and apparatus for manufacturing magnetic disk
    • 磁盘及磁盘制造方法及装置
    • US5879569A
    • 1999-03-09
    • US677960
    • 1996-07-10
    • Hiroshi MatsumotoHiroshi YashikiYoichi InomataTatsuya YonedaKazuhiko TsutsumiNoriyuki ShigeTokuho Takagaki
    • Hiroshi MatsumotoHiroshi YashikiYoichi InomataTatsuya YonedaKazuhiko TsutsumiNoriyuki ShigeTokuho Takagaki
    • G11B5/82G11B5/84B44C1/22
    • G11B5/8408G11B5/82
    • To provide a magnetic disk excellent in floating and sliding characteristics in a low floating area. A magnetic disk having a feature that variations in the height of the projections on each surface of protective films in floating ensured areas on both sides of the magnetic disk are .+-.15%, and a magnetic disk device on which the magnetic disk is mounted. A surface processing apparatus for a magnetic disk, including: a first electrode for fixing the magnetic disk, the first electrode having an inside diameter larger than the inside diameter of the non-magnetic substrate; an electrically grounded shield for shielding the first electrode; a second electrode, disposed in parallel to the surface of the magnetic disk, for generating plasma against the surface of the magnetic disk; and a plasma control member, disposed at a position separated from the outer edge of the magnetic disk by a specified distance, for controlling plasma generated against the surface of the magnetic disk; wherein a power is applied between the first and second electrodes for plasma-etching the surface of the magnetic disk.
    • 提供在低浮动区域中浮动和滑动特性优异的磁盘。 具有这样的特征的磁盘,其特征在于,在磁盘两侧的浮动确保区域中的保护膜的每个表面上的突起的高度变化为+/- 15%,以及安装有磁盘的磁盘装置 。 一种用于磁盘的表面处理装置,包括:用于固定磁盘的第一电极,第一电极的内径大于非磁性基板的内径; 用于屏蔽第一电极的电接地屏蔽; 第二电极,平行于磁盘的表面设置,用于产生等离子体抵靠磁盘的表面; 以及等离子体控制构件,设置在与磁盘的外边缘分开一定距离的位置,用于控制对磁盘表面产生的等离子体; 其中在所述第一和第二电极之间施加电力以等离子体刻蚀所述磁盘的表面。
    • 10. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4315226A
    • 1982-02-09
    • US77735
    • 1979-09-20
    • Naoki ChinoneKazutoshi SaitoNoriyuki ShigeRyoichi Ito
    • Naoki ChinoneKazutoshi SaitoNoriyuki ShigeRyoichi Ito
    • H01S5/20H01S5/227H01S5/32H01S3/19
    • H01S5/20H01S5/32H01S5/2004H01S5/2275
    • A semiconductor laser device is capable of producing an increased optical output power with improved optical characteristics without being subjected to mode distortions in the output beam, while retaining advantageous features inherent to a semiconductor laser device of a buried heterostructure. The semiconductor laser device comprises an optical confinement region which is constituted by at least first, second, third and fourth semiconductor layers successively laminated on a predetemined semiconductor substrate. The second semiconductor layer has a relatively small refractive index and a relatively wide band gap as compared with those of the third semiconductor layer, while the first and the fourth semiconductor layers which are of the conductivity types opposite to each other have relatively small refractive indexes as compared with the second and the third semiconductor layers. The band gaps of the fourth and the second semiconductor layers are relatively large as compared with that of the third semiconductor layer. Difference in the band gap at least between the second and the third semiconductor layers is not smaller than 0.15 eV.
    • 半导体激光器件能够在保持输入光束中的模式失真的同时保持有益特征,同时保持掩埋异质结构的半导体激光器件固有的特性,从而可以产生具有改进的光学特性的增加的光输出功率。 半导体激光器件包括由至少第一,第二,第三和第四半导体层构成的光限制区,该半导体层依次层压在预先形成的半导体衬底上。 与第三半导体层相比,第二半导体层具有相对较小的折射率和相对宽的带隙,而导电类型彼此相反的第一和第四半导体层的折射率相对较小, 与第二和第三半导体层相比。 与第三半导体层相比,第四和第二半导体层的带隙相对较大。 至少在第二和第三半导体层之间的带隙的差异不小于0.15eV。