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1. 发明授权

US4176325A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4176325A
公开(公告)日：1979-11-27
申请号：US843365
申请日：1977-10-19
申请人： Takashi Kajimura , Kazutoshi Saito , Noriyuki Shige , Michiharu Nakamura , Jun-ichi Umeda , Masayoshi Kobayashi
发明人： Takashi Kajimura , Kazutoshi Saito , Noriyuki Shige , Michiharu Nakamura , Jun-ichi Umeda , Masayoshi Kobayashi
IPC分类号： H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device capable of emitting highly collimated beams, especially of a narrow beam divergence, is disclosed. A striped hetero-junction is formed on a predetermined semiconductor substrate by a first semiconductor layer (refractive index: n.sub.1, band gap: Eg.sub.1, thickness: d), a second semiconductor layer (n.sub.2) and a third semiconductor layer (n.sub.3), and the hetero-junction is sandwiched between portions of a fourth semiconductor layer (n.sub.4, Eg.sub.4) into a buried structure. At this time, the various materials are selected to follow the relations of d.ltoreq..lambda. (where .lambda. denotes the oscillation wavelength of the semiconductor laser), n.sub.2, n.sub.3
摘要翻译：公开了能够发射高度准直的光束，特别是窄的光束发散的半导体激光器件。通过第一半导体层（折射率：n1，带隙：Eg1，厚度：d），第二半导体层（n2）和第三半导体层（n3）在预定的半导体衬底上形成条纹异质结，以及异质结被夹在第四半导体层（n4，Eg4）的一部分成埋入结构。此时，选择各种材料以遵循dλ/λ（其中λ表示半导体激光器的振荡波长），n2，n3

2. 发明授权

US4337443A Semiconductor laser device with facet passivation film 失效
标题翻译：半导体激光器件具有刻面钝化膜
公开(公告)号：US4337443A
公开(公告)日：1982-06-29
申请号：US124266
申请日：1980-02-25
申请人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
发明人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of (.lambda./4).multidot.m where .lambda. represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.
摘要翻译：公开了一种半导体激光元件，其包括沉积在激光元件的至少光学输出面上的非晶材料的膜，并且包含硅和氢作为不可缺少的成分。优选在（λ/ 4）×m附近选择非晶膜的厚度，其中λ表示非晶膜中的激光的波长，m表示奇整数。可以将非透明绝缘材料的膜沉积在非晶膜上，从而构成复合膜。利用所公开的半导体激光元件的结构，可以将激光元件的阈值电流的增加抑制到最小，同时可以提高最大光输出功率。

3. 发明授权

US4503540A Phase-locked semiconductor laser device 失效
标题翻译：锁相半导体激光器件
公开(公告)号：US4503540A
公开(公告)日：1985-03-05
申请号：US368150
申请日：1982-04-14
申请人： Hisao Nakashima , Jun-ichi Umeda , Takao Kuroda , Takashi Kajimura , Hiroshi Matsuda
发明人： Hisao Nakashima , Jun-ichi Umeda , Takao Kuroda , Takashi Kajimura , Hiroshi Matsuda
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/40 , H01S3/19
CPC分类号： H01S5/2203 , H01S5/4043 , H01S5/0424 , H01S5/2275
摘要： A phase-locked semiconductor laser device comprising a laminated structure in which a plurality of first semiconductor layers having the substantially same composition are stacked in a manner to be sandwiched between second semiconductor layers having a band gap wider, and a refractive index lower, than those of said first semiconductor layers; a third semiconductor layer which is disposed in contact with at least one of side faces of said laminated structure parallel to a traveling direction of a laser beam, which is not narrower in the band gap and not higher in the refractive index than said first semiconductor layers and which does not have the same conductivity type as, at least, that of said first semiconductor layers; means to inject current into an interface between said first semiconductor layers and said third semiconductor layer disposed on the side face of said laminated structure; and means to act as an optical resonator for the laser beam.
摘要翻译：一种锁相半导体激光器件，包括层叠结构，其中具有基本上相同组成的多个第一半导体层以夹在带隙较宽的第二半导体层和折射率较低的第二半导体层之间的方式堆叠的所述第一半导体层; 第三半导体层，其与所述层叠结构的至少一个侧面平行设置成与激光束的行进方向平行，所述激光束的带隙不窄，折射率不高于所述第一半导体层并且其不具有至少与所述第一半导体层的导电类型相同的导电类型; 用于将电流注入到所述第一半导体层和设置在所述层叠结构的侧面上的所述第三半导体层之间的界面中的装置; 以及用作激光束的光学谐振器的装置。

4. 发明授权

US4426703A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4426703A
公开(公告)日：1984-01-17
申请号：US272039
申请日：1981-06-09
申请人： Takao Kuroda , Takashi Kajimura , Jun-ichi Umeda , Katsutoshi Saito
发明人： Takao Kuroda , Takashi Kajimura , Jun-ichi Umeda , Katsutoshi Saito
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/2059
摘要： In a semiconductor laser device wherein a stripe-shaped impurity-diffused region is disposed in at least parts of semiconductor layers of from a surface semiconductor layer of a semiconductor layer assembly constituting the semiconductor laser device to a second semiconductor layer lying in contact with a first semiconductor layer having an active region, the impurity-diffused region having the same conductivity type as that of the second semiconductor layer and extending at least from the surface semiconductor layer to a depth vicinal to the first semiconductor layer, the impurity region serving as a current path; a semiconductor laser device characterized in that a third semiconductor layer in which the diffusion rate of an impurity for use in the formation of the impurity-diffused region is lower than in the second semiconductor layer is disposed between the surface semiconductor layer and the second semiconductor layer.
摘要翻译：在半导体激光器件中，其中条形杂质扩散区域设置在从构成半导体激光器件的半导体层组件的表面半导体层的半导体层的至少部分到与第一具有有源区的半导体层，杂质扩散区具有与第二半导体层相同的导电类型并且至少从表面半导体层延伸到与第一半导体层相邻的深度，杂质区用作电流路径; 一种半导体激光器件，其特征在于，在所述表面半导体层和所述第二半导体层之间设置有其中用于形成所述杂质扩散区域的杂质的扩散速率低于所述第二半导体层的第三半导体层。

5. 发明授权

US4369513A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4369513A
公开(公告)日：1983-01-18
申请号：US204012
申请日：1980-10-31
申请人： Jun-ichi Umeda , Takashi Kajimura
发明人： Jun-ichi Umeda , Takashi Kajimura
IPC分类号： H01S5/042 , H01S5/10 , H01S5/40 , H01S3/19
CPC分类号： H01S5/10 , H01S5/4031 , H01S5/0425
摘要： Disclosed is a semiconductor laser element having on a predetermined semiconductor substrate a stacked region for optical confinement including an active layer and clad layers, a first electrode disposed on the semiconductor substrate side and a second electrode disposed over the stacked region, and means for constructing an optical resonator, the semiconductor laser element comprising the fact that the means to inject current into the active layer is formed of a plurality of stripe conductive regions which are juxtaposed in traveling direction of a laser beam, and that laser radiations emitted in correspondence with the respective stripe conductive regions form a simply connected net and give rise to nonlinear interactions among them. As a typical example of the current injection means, the conductive regions have a strip-shaped pattern which includes a broader portion and a narrower portion. A coupled-multiple-stripe laser element in which the phases and wavelengths of the laser radiations of the respective strips are uniform is realized.
摘要翻译：公开了一种半导体激光元件，其特征在于，在规定的半导体基板上具有包括有源层和包层的光限制用的堆叠区域，配置在半导体基板侧的第一电极和配置在堆叠区域上的第二电极，光学谐振器，该半导体激光元件包括以下事实：注入有源层的电流的装置由在激光束的行进方向上并列的多个条状导电区域形成，并且与相应的激光辐射相对应地发射的激光辐射条纹导电区域形成简单连接的网络，并引起它们之间的非线性相互作用。作为电流注入装置的典型实例，导电区域具有包括较宽部分和较窄部分的条状图案。实现了各条带的激光辐射的相位和波长均匀的耦合多条激光元件。

6. 发明授权

US4509173A Phase-locked semiconductor laser device 失效
标题翻译：锁相半导体激光器件
公开(公告)号：US4509173A
公开(公告)日：1985-04-02
申请号：US366324
申请日：1982-04-07
申请人： Jun-ichi Umeda , Hisao Nakashima , Takashi Kajimura , Takao Kuroda
发明人： Jun-ichi Umeda , Hisao Nakashima , Takashi Kajimura , Takao Kuroda
IPC分类号： H01S5/00 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4068
摘要： A semiconductor laser device is provided with a semiconductor substrate and at least a semiconductor assembly for optical confinement formed on the substrate which includes an active layer and cladding layers. A first electrode is disposed on the semiconductor assembly and a second electrode is disposed on the semiconductor substrate. To provide a phase-locked semiconductor laser device of high quality, a plurality of regions are provided in the semiconductor assembly which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting with a traveling direction of the laser beam. These regions can be discretely disposed over or under the active layer and give rise to a nonlinear interaction between adjacent laser emission regions formed by the plurality of regions.
摘要翻译：半导体激光装置设置有半导体基板和至少一个形成在基板上的用于光学限制的半导体组件，该半导体组件包括有源层和包层。第一电极设置在半导体组件上，第二电极设置在半导体衬底上。为了提供高质量的锁相半导体激光器件，在半导体组件中设置多个区域，其实际上导致激光束在与行进方向相交的方向上的复合折射率的变化激光束。这些区域可以离散地设置在有源层上或下方，并产生由多个区域形成的相邻激光发射区域之间的非线性相互作用。

7. 发明授权

US4432091A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4432091A
公开(公告)日：1984-02-14
申请号：US342357
申请日：1982-01-25
申请人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki , Jun-ichi Umeda
发明人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki , Jun-ichi Umeda
IPC分类号： H01L21/208 , H01S5/00 , H01S5/10 , H01S3/19
CPC分类号： H01S5/10
摘要： In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination (.theta.) relative to an axis which is perpendicular to optically flat faces constituting said optical resonator. The inclination angle .theta. (rad) should most preferably lie in a range of: ##EQU1## where .theta..sub.z denotes a reflection angle, .theta..sub.c a critical angle, W 1/2 of a thickness of a waveguide, and l a cavity length. The laser device is effective for preventing laser facets from breaking down, and can produce high power.
摘要翻译：在具有至少第一半导体层的半导体激光器件中，以夹着第一半导体层的方式形成并且具有比第一半导体层的折射率更宽的带隙和更低折射率的第二和第三半导体层，光学谐振器和载体注入装置; 一种半导体激光器件，其特征在于，至少所述第一半导体层相对于垂直于构成所述光谐振器的光学平面的轴线具有倾斜角（θ）。倾斜角度θ（rad）应最优选在以下范围内：θz表示反射角，θc临界角，波导厚度的W 1/2，以及l腔长度。激光装置有效防止激光刻面破碎，并能产生高功率。

8. 发明授权

US4404678A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4404678A
公开(公告)日：1983-09-13
申请号：US365606
申请日：1982-04-05
申请人： Kunio Aiki , Michiharu Nakamura , Jun-ichi Umeda
发明人： Kunio Aiki , Michiharu Nakamura , Jun-ichi Umeda
IPC分类号： H01L33/00 , H01S5/10 , H01S5/223 , H01S3/19
CPC分类号： H01S5/10 , H01L33/0025 , H01S5/2232 , H01S5/0655 , H01S5/1064 , H01S5/2234 , H01S5/3203 , H01S5/3211
摘要： A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides light-output versus current characteristics free of either kinks or any anomalies.
摘要翻译：本发明的半导体激光器件通过在带槽或投影的衬底上生长平面双异质（DH）层，具有沿接合面的内置的被动引导机构。它在最低横向模式下稳定工作，并提供光输出与电流特性，无扭曲或任何异常现象。

9. 发明授权

US4326176A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4326176A
公开(公告)日：1982-04-20
申请号：US786758
申请日：1977-04-12
申请人： Kunio Aiki , Michiharu Nakamura , Jun-ichi Umeda
发明人： Kunio Aiki , Michiharu Nakamura , Jun-ichi Umeda
IPC分类号： H01L33/00 , H01S5/10 , H01S5/223 , H01S3/19
CPC分类号： H01S5/10 , H01L33/0025 , H01S5/2232 , H01S5/0655 , H01S5/1064 , H01S5/2234 , H01S5/3203 , H01S5/3211
摘要： A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides light-output versus current characteristics fee of either kinks or any anomalies.
摘要翻译：本发明的半导体激光器件通过在带槽或投影的衬底上生长平面双异质（DH）层，具有沿接合面的内置的被动引导机构。它在最低横向模式下稳定运行，并提供扭曲或任何异常现象的光输出与电流特性费用。

10. 发明授权

US4257011A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4257011A
公开(公告)日：1981-03-17
申请号：US929013
申请日：1978-07-28
申请人： Michiharu Nakamura , Shigeo Yamashita , Takao Kuroda , Jun-ichi Umeda
发明人： Michiharu Nakamura , Shigeo Yamashita , Takao Kuroda , Jun-ichi Umeda
IPC分类号： H01S5/12 , H01S5/223 , H01S3/19
CPC分类号： H01S5/12 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser device has stabilized longitudinal and transverse modes without excess optical noise for a modulated signal generated by mode interaction. The fundamental construction of the semiconductor laser device comprises a structure wherein a first semiconductor layer is sandwiched between second and third semiconductor layers which have a greater band gap and lower index of refraction than the first semiconductor layer. That region of at least one of the second and third semiconductor layers which is remote from the first semiconductor layer corresponds substantially to a radiation region and serves as a light non-absorptive region in the shape of a stripe. A semiconductor layer has portions lying on both sides of the semiconductor layer remote from the first semiconductor layer and has an effective complex refractive-index for laser light discontinuous at both ends of the semiconductor layer remote from the first semiconductor layer. Periodic corrugations which intersect orthogonally to the lengthwise direction of the stripe-shaped light non-absorptive region are formed in at least one interface of the semiconductor layers in a manner to include at least a region corresponding to the light non-absorptive region.
摘要翻译：半导体激光器件对于通过模式相互作用产生的调制信号具有稳定的纵向和横向模式而没有过多的光学噪声。半导体激光器件的基本结构包括其中第一半导体层夹在具有比第一半导体层更大的带隙和较低的折射率的第二和第三半导体层之间的结构。远离第一半导体层的第二和第三半导体层中的至少一个的区域基本上对应于辐射区域，并且用作条纹形状的光非吸收区域。半导体层具有位于远离第一半导体层的半导体层的两侧的部分，并且对于远离第一半导体层的半导体层的两端处的不连续的激光具有有效的复合折射率。以至少包括对应于光非吸收区域的区域的方式，在半导体层的至少一个界面中形成与条形光非吸收区域的长度方向垂直相交的周期波纹。

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