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1. 发明授权

US4176325A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4176325A
公开(公告)日：1979-11-27
申请号：US843365
申请日：1977-10-19
申请人： Takashi Kajimura , Kazutoshi Saito , Noriyuki Shige , Michiharu Nakamura , Jun-ichi Umeda , Masayoshi Kobayashi
发明人： Takashi Kajimura , Kazutoshi Saito , Noriyuki Shige , Michiharu Nakamura , Jun-ichi Umeda , Masayoshi Kobayashi
IPC分类号： H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device capable of emitting highly collimated beams, especially of a narrow beam divergence, is disclosed. A striped hetero-junction is formed on a predetermined semiconductor substrate by a first semiconductor layer (refractive index: n.sub.1, band gap: Eg.sub.1, thickness: d), a second semiconductor layer (n.sub.2) and a third semiconductor layer (n.sub.3), and the hetero-junction is sandwiched between portions of a fourth semiconductor layer (n.sub.4, Eg.sub.4) into a buried structure. At this time, the various materials are selected to follow the relations of d.ltoreq..lambda. (where .lambda. denotes the oscillation wavelength of the semiconductor laser), n.sub.2, n.sub.3
摘要翻译：公开了能够发射高度准直的光束，特别是窄的光束发散的半导体激光器件。通过第一半导体层（折射率：n1，带隙：Eg1，厚度：d），第二半导体层（n2）和第三半导体层（n3）在预定的半导体衬底上形成条纹异质结，以及异质结被夹在第四半导体层（n4，Eg4）的一部分成埋入结构。此时，选择各种材料以遵循dλ/λ（其中λ表示半导体激光器的振荡波长），n2，n3

2. 发明授权

US4315226A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4315226A
公开(公告)日：1982-02-09
申请号：US77735
申请日：1979-09-20
申请人： Naoki Chinone , Kazutoshi Saito , Noriyuki Shige , Ryoichi Ito
发明人： Naoki Chinone , Kazutoshi Saito , Noriyuki Shige , Ryoichi Ito
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S3/19
CPC分类号： H01S5/20 , H01S5/32 , H01S5/2004 , H01S5/2275
摘要： A semiconductor laser device is capable of producing an increased optical output power with improved optical characteristics without being subjected to mode distortions in the output beam, while retaining advantageous features inherent to a semiconductor laser device of a buried heterostructure. The semiconductor laser device comprises an optical confinement region which is constituted by at least first, second, third and fourth semiconductor layers successively laminated on a predetemined semiconductor substrate. The second semiconductor layer has a relatively small refractive index and a relatively wide band gap as compared with those of the third semiconductor layer, while the first and the fourth semiconductor layers which are of the conductivity types opposite to each other have relatively small refractive indexes as compared with the second and the third semiconductor layers. The band gaps of the fourth and the second semiconductor layers are relatively large as compared with that of the third semiconductor layer. Difference in the band gap at least between the second and the third semiconductor layers is not smaller than 0.15 eV.
摘要翻译：半导体激光器件能够在保持输入光束中的模式失真的同时保持有益特征，同时保持掩埋异质结构的半导体激光器件固有的特性，从而可以产生具有改进的光学特性的增加的光输出功率。半导体激光器件包括由至少第一，第二，第三和第四半导体层构成的光限制区，该半导体层依次层压在预先形成的半导体衬底上。与第三半导体层相比，第二半导体层具有相对较小的折射率和相对宽的带隙，而导电类型彼此相反的第一和第四半导体层的折射率相对较小，与第二和第三半导体层相比。与第三半导体层相比，第四和第二半导体层的带隙相对较大。至少在第二和第三半导体层之间的带隙的差异不小于0.15eV。

3. 发明授权

US06798595B2 Magnetic recording playback device 失效
标题翻译：磁记录播放装置
公开(公告)号：US06798595B2
公开(公告)日：2004-09-28
申请号：US09936416
申请日：2001-11-26
申请人： Kazutoshi Saito
发明人： Kazutoshi Saito
IPC分类号： G11B509
CPC分类号： G11B20/1833 , G11B5/09 , G11B20/18
摘要： In a magnetic recording playback device, since minimum redundant bytes required for satisfying a target error rate are added, the addition of more redundant bytes than are necessary is reduced, whereby overwrite of the drive due to the redundant bytes is reduced. The size of redundant bytes to be added in a formatter block is varied according to the defect condition or electric characteristic of a medium on which data are to be written, or the electric characteristics of a write head for writing the data and an MR head for reproducing the written data.
摘要翻译：在磁记录回放装置中，由于增加了满足目标错误率所需的最小冗余字节，因此减少了比所需更多的冗余字节的增加，从而减少了由冗余字节引起的驱动器的重写。要在格式化器块中添加的冗余字节的大小根据要写入数据的介质的缺陷条件或电特性或用于写入数据的写入头的电特性和用于复制书面资料。

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