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    • 4. 发明授权
    • Dielectric ceramic material and monolithic ceramic electronic element
    • 介电陶瓷材料和单片陶瓷电子元件
    • US06489257B1
    • 2002-12-03
    • US09642194
    • 2000-08-18
    • Takashi HiramatsuJun IkedaHiroyuki WadaYukio Hamaji
    • Takashi HiramatsuJun IkedaHiroyuki WadaYukio Hamaji
    • C04B35468
    • H01G4/1227
    • A dielectric ceramic material containing BaTiO3 as a primary component and a rare earth element as an additional component, wherein the material satisfies the relation 0.7≦M/N so as to make the density of the rare earth metal uniform between crystal grains, and the material satisfies the relation 0.8≦L/M so as to make the density of the rare earth metal uniform in a crystal grain. In these relations, M represents the number of crystal grains satisfying the relation 0.5≦Di/D; N represents the number of crystal grains constituting the ceramic material; and L represents the number of crystal grains satisfying the relations 0.5≦Di/D and Si/Di≦0.3, wherein Di represents the mean density of the rare earth element in an arbitrary crystal grain i, D represents the mean density of the rare earth element in the entirety of the ceramic material, and Si represents the standard deviation of the density of the rare earth element in the crystal grain i.
    • 以BaTiO 3为主成分的电介质陶瓷材料和作为附加成分的稀土元素,其中该材料满足关系0.7 <= M / N,以使稀土金属的密度在晶粒之间均匀,而 材料满足0.8 <= L / M的关系,以使稀土金属的密度在晶粒中均匀。 在这些关系中,M表示满足0.5 <= Di / D的关系的晶粒的数量; N表示构成陶瓷材料的晶粒数; L表示满足0.5 <= Di / D和Si / Di <= 0.3的关系的晶粒数,其中Di表示任意晶粒i中稀土元素的平均密度,D表示 稀土元素在整个陶瓷材料中,Si表示稀土元素在晶粒i中的密度的标准偏差。
    • 6. 发明授权
    • Dielectric ceramic, method for producing the same, laminated ceramic electronic element, and method for producing the same
    • 介电陶瓷,其制造方法,层叠陶瓷电子元件及其制造方法
    • US06383323B1
    • 2002-05-07
    • US09935611
    • 2001-08-23
    • Nobuyuki WadaTakashi HiramatsuJun IkedaYukio Hamaji
    • Nobuyuki WadaTakashi HiramatsuJun IkedaYukio Hamaji
    • B32B3126
    • H01G4/1227C04B35/4682
    • A dielectric ceramic which exhibits small variation in dielectric constant, allows use of a base metal, can be fired in a reducing atmosphere and which is suitable for constituting a dielectric ceramic layer for, e.g., a laminated ceramic capacitor is obtained by firing barium titanate powder in which the c-axis/a-axis ratio in the perovskite structure is about 1.000 or more and less than about 1.003 and the amount of OH groups in the crystal lattice is about 2.0 wt. % or less. The barium titanate powder starting material preferably has a maximum particle size of about 0.3 &mgr;m or less and an average particle size of about 0.05-0.15 &mgr;m. Each particle of the barium titanate powder preferably comprises a low-crystallinity portion and a high-crystallinity portion, the diameter of the low-crystallinity portion being about 0.5 times or more the particle size of the powder. When sintered, the powder satisfies the ratio of (average grain size of the fired dielectric ceramic)/(average particle size of barium titanate powder starting material), R, of about 0.90-1.2, to thereby suppress considerable grain growth. A laminated ceramic electronic element including a laminate of a plurality of layers of the above-mentioned dielectric ceramic, as well as a method for producing the same, is described.
    • 介电常数变化小的电介质陶瓷可以使用贱金属,可在还原气氛中烧成,适用于构成电介质陶瓷层,例如通过烧结钛酸钡粉末得到层压陶瓷电容器 其中钙钛矿结构中的c轴/ a轴比为约1.000以上且小于约1.003,并且晶格中的OH基的量为约2.0重量%。 % 或更少。 钛酸钡粉末原料优选具有约0.3μm或更小的最大粒度和约0.05-0.15μm的平均粒度。 钛酸钡粉末的每个颗粒优选包含低结晶度部分和高结晶度部分,低结晶度部分的直径为粉末粒径的约0.5倍以上。 当烧结时,粉末满足(烧结的电介质陶瓷的平均粒径)/(平均粒径的钛酸钡粉末原料)的比例R为约0.90-1.2,从而抑制相当大的晶粒生长。 描述了包括上述介电陶瓷的多层的叠层体的层压陶瓷电子元件及其制造方法。
    • 10. 发明申请
    • Method of inspecting actual speed of semiconductor integrated circuit
    • 检查半导体集成电路实际速度的方法
    • US20060001434A1
    • 2006-01-05
    • US11128331
    • 2005-05-13
    • Takashi HiramatsuKinya DaioAkiko Fukuda
    • Takashi HiramatsuKinya DaioAkiko Fukuda
    • G01R27/00
    • G01R31/318577
    • It is an object to comprehensively carry out an actual speed inspection without reducing an operating speed in a normal mode in a scan test for a semiconductor integrated circuit. In order to operate a circuit at a proper frequency in a shift operation, to operate the circuit in an actual operation time in a capture operation, and to effectively implement different duty ratios from each other for a group of circuits having different operating frequency characteristics in the capture operation, the duty ratios of respective clocks are changed in a shift operation cycle immediately before a capture operation cycle and the respective clocks are set to have an equal duty ratio in a capture operation cycle. In that case, an NT signal control circuit for generating an NT signal to specify the switching of the shift operation and the capture operation is provided in a semiconductor integrated circuit to execute an operation in response to the NT signal within one clock cycle.
    • 在半导体集成电路的扫描试验中,不会降低正常模式下的运行速度,而是全面地进行实际的速度检查。 为了在移位操作中以适当的频率操作电路,在捕获操作中的实际操作时间内操作电路,并且为具有不同工作频率特性的一组电路有效地实现彼此不同的占空比 在捕获操作周期之前的移位操作周期中,各个时钟的占空比被改变,并且在捕获操作周期中各个时钟被设置为具有相等的占空比。 在这种情况下,在半导体集成电路中提供用于产生用于指定移位操作和捕捉操作的切换的NT信号的NT信号控制电路,以在一个时钟周期内响应于NT信号执行操作。