专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120132719A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120132719A1
公开(公告)日：2012-05-31
申请号：US13368380
申请日：2012-02-08
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE , Munehiro KOZUMA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE , Munehiro KOZUMA
IPC分类号： G06K19/073
CPC分类号： G06K19/07749 , G06K7/0008 , G06K19/0716 , G06K2017/0045
摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.
摘要翻译：半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路由无线信号产生。这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

2. 发明申请

US20110261864A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110261864A1
公开(公告)日：2011-10-27
申请号：US13177583
申请日：2011-07-07
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE
IPC分类号： H04B1/56
CPC分类号： G06K19/07749
摘要： In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.
摘要翻译：在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从读取器/写入器到半导体器件。因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。半导体器件包括天线电路，发送电路，接收电路和运算处理电路。天线电路发送和接收无线电信号。发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

3. 发明申请

US20120081186A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE HAVING THE SAME 审中-公开
标题翻译：具有该半导体器件和电子器件的半导体器件
公开(公告)号：US20120081186A1
公开(公告)日：2012-04-05
申请号：US13316808
申请日：2011-12-12
申请人： Daisuke KAWAE , Masami ENDO , Yoshiyuki KUROKAWA , Takayuki IKEDA
发明人： Daisuke KAWAE , Masami ENDO , Yoshiyuki KUROKAWA , Takayuki IKEDA
IPC分类号： H03K3/03
CPC分类号： H03K3/0315 , G06F1/04 , G06K19/07749 , H03K2005/00045 , H03K2005/00084
摘要： A semiconductor device includes an antenna circuit for receiving a wireless signal, a power supply circuit generating power by the wireless signal received by the antenna circuit, and a clock generation circuit to which power is supplied. The clock generation circuit includes a ring oscillator which self-oscillates and a frequency divider which adjusts frequency of an output signal of the ring oscillator in an appropriate range. A digital circuit portion is driven by a clock having high frequency accuracy, so that a malfunction such as an incorrect operation or no response is prevented.
摘要翻译：半导体器件包括用于接收无线信号的天线电路，通过由天线电路接收的无线信号产生电力的电源电路以及供给电力的时钟产生电路。时钟发生电路包括自振荡的环形振荡器和将环形振荡器的输出信号的频率调整到适当范围的分频器。数字电路部分由具有高频精度的时钟驱动，从而防止诸如错误操作或不响应的故障。

4. 发明申请

US20110248268A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US20110248268A1
公开(公告)日：2011-10-13
申请号：US13167762
申请日：2011-06-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

5. 发明申请

US20090218568A1 THIN FILM TRANSISOTR AND DISPLAY DEVICE 有权
标题翻译：薄膜透镜和显示器件
公开(公告)号：US20090218568A1
公开(公告)日：2009-09-03
申请号：US12391398
申请日：2009-02-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

6. 发明申请

US20120024965A1 SEMICONDUCTOR DEVICE AND IC LABEL, IC TAG, AND IC CARD PROVIDED WITH THE SEMICONDUCTOR DEVICE 有权
标题翻译：具有半导体器件的半导体器件和IC标签，IC标签和IC卡
公开(公告)号：US20120024965A1
公开(公告)日：2012-02-02
申请号：US13267936
申请日：2011-10-07
申请人： Daisuke KAWAE , Takayuki IKEDA , Munehiro KOZUMA
发明人： Daisuke KAWAE , Takayuki IKEDA , Munehiro KOZUMA
IPC分类号： G06K19/067
CPC分类号： G06K19/0723 , G06K19/0701 , H01Q1/2225 , H01Q1/248 , H02M3/07
摘要： A charge accumulation circuit having a structure in which a capacitor is divided into a plurality of pieces and the divided capacitors are connected in parallel through switches is provided. The charge accumulation circuit controls the switch provided between the capacitors and thus can dynamically vary electrostatic capacitance of the charge accumulation circuit which applies a voltage to a constant voltage circuit.
摘要翻译：提供一种电荷累积电路，其具有将电容器分成多个部分的结构，并且分开的电容器通过开关并联连接。电荷累积电路控制在电容器之间提供的开关，从而可以动态地改变向恒压电路施加电压的电荷累积电路的静电电容。

7. 发明申请

US20110291013A1 PHOTODETECTOR 有权
标题翻译：照相机
公开(公告)号：US20110291013A1
公开(公告)日：2011-12-01
申请号：US13113470
申请日：2011-05-23
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Munehiro KOZUMA , Masataka IKEDA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Munehiro KOZUMA , Masataka IKEDA
IPC分类号： G01J5/00 , G01J1/42 , H01J40/14
CPC分类号： G06F3/0421 , G06F3/0428 , H01L27/144 , H01L27/14625 , H01L31/0232 , H01L31/02327
摘要： Influence of external light is suppressed. With a photodetector including a photodetector circuit which generates a data signal in accordance with illuminance of incident light and a light unit which overlaps with the photodetector circuit, a first data signal is generated by the photodetector circuit when the light unit is in an ON state, a second data signal is formed by the photodetector circuit when the light unit is in an OFF state, and the first data signal and the second data signal are compared, so that a difference data signal that is data of a difference between the two compared data signals is generated.
摘要翻译：外部光的影响被抑制。利用包括根据入射光的照度产生数据信号的光电检测器电路和与光电检测器电路重叠的光单元的光检测器，当光单元处于导通状态时，由光检测器电路产生第一数据信号，当光单元处于关闭状态时，第二数据信号由光检测器电路形成，并且比较第一数据信号和第二数据信号，使得作为两个比较数据之间的差的数据的差分数据信号生成信号。

8. 发明申请

US20110220889A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110220889A1
公开(公告)日：2011-09-15
申请号：US13039491
申请日：2011-03-03
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Munehiro KOZUMA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Munehiro KOZUMA
IPC分类号： H01L31/032
CPC分类号： H01L27/14643 , G02F1/1362 , G02F2001/13312 , H01L27/1225 , H01L27/14632 , H01L27/1464 , H04N5/378
摘要： An object is to achieve low-power consumption by reducing the off-state current of a transistor in a photosensor. A semiconductor device including a photosensor having a photodiode, a first transistor, and a second transistor; and a read control circuit including a read control transistor, in which the photodiode has a function of supplying charge based on incident light to a gate of the first transistor; the first transistor has a function of storing charge supplied to its gate and converting the charge stored into an output signal; the second transistor has a function of controlling reading of the output signal; the read control transistor functions as a resistor converting the output signal into a voltage signal; and semiconductor layers of the first transistor, the second transistor, and the read control transistor are formed using an oxide semiconductor.
摘要翻译：目的是通过降低光电传感器中的晶体管的截止电流来实现低功耗。一种半导体器件，包括具有光电二极管的光传感器，第一晶体管和第二晶体管; 以及包括读取控制晶体管的读取控制电路，其中光电二极管具有基于入射光向第一晶体管的栅极提供电荷的功能; 第一晶体管具有存储提供给其栅极的电荷并将存储的电荷转换为输出信号的功能; 第二晶体管具有控制输出信号的读取的功能; 读控制晶体管用作将输出信号转换成电压信号的电阻器; 并且使用氧化物半导体形成第一晶体管，第二晶体管和读控制晶体管的半导体层。

9. 发明申请

US20110215861A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20110215861A1
公开(公告)日：2011-09-08
申请号：US13037491
申请日：2011-03-01
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Munehiro KOZUMA , Takeshi AOKI
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Munehiro KOZUMA , Takeshi AOKI
IPC分类号： G05F1/10 , H01L31/113
CPC分类号： H01L27/14643 , G01J1/44 , H01L27/14609 , H04N5/378
摘要： A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor.
摘要翻译：半导体器件包括光电二极管，第一晶体管，第二晶体管和第三晶体管。第二晶体管和第三晶体管具有保持积累在第一晶体管的栅极中的电荷的功能。在第二晶体管和第三晶体管截止的期间，施加到第二晶体管的栅极的电压的电压电平被设定为低于第二晶体管的源极的电压电平，第二晶体管的漏极和施加到第三晶体管的栅极的电压的电压电平被设置为低于第三晶体管的源极的电压电平和第三晶体管的漏极的电压电平。

10. 发明申请

US20110215323A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110215323A1
公开(公告)日：2011-09-08
申请号：US13037889
申请日：2011-03-01
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Munehiro KOZUMA , Masataka IKEDA , Takeshi AOKI
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Munehiro KOZUMA , Masataka IKEDA , Takeshi AOKI
IPC分类号： H01L27/148 , H03B1/00
CPC分类号： H01L27/14616 , H01L27/14603 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L29/7869 , H01L31/1055 , H04N5/361 , H04N5/374 , H04N5/378
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
摘要翻译：在其中多个像素以矩阵形式布置的CMOS图像传感器中，其中沟道形成区域包括氧化物半导体的晶体管被用于处于像素部分的电荷累积控制晶体管和复位晶体管。在矩阵中排列的所有像素中执行信号电荷累积部分的复位操作之后，在所有像素中执行光电二极管的电荷累积操作，并且每行执行来自像素的信号的读取操作。因此，可以采取没有失真的图像。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式