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1. 发明申请

US20120132719A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120132719A1
公开(公告)日：2012-05-31
申请号：US13368380
申请日：2012-02-08
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE , Munehiro KOZUMA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE , Munehiro KOZUMA
IPC分类号： G06K19/073
CPC分类号： G06K19/07749 , G06K7/0008 , G06K19/0716 , G06K2017/0045
摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.
摘要翻译：半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路由无线信号产生。这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

2. 发明申请

US20110261864A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110261864A1
公开(公告)日：2011-10-27
申请号：US13177583
申请日：2011-07-07
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE
IPC分类号： H04B1/56
CPC分类号： G06K19/07749
摘要： In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.
摘要翻译：在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从读取器/写入器到半导体器件。因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。半导体器件包括天线电路，发送电路，接收电路和运算处理电路。天线电路发送和接收无线电信号。发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

3. 发明申请

US20120081186A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE HAVING THE SAME 审中-公开
标题翻译：具有该半导体器件和电子器件的半导体器件
公开(公告)号：US20120081186A1
公开(公告)日：2012-04-05
申请号：US13316808
申请日：2011-12-12
申请人： Daisuke KAWAE , Masami ENDO , Yoshiyuki KUROKAWA , Takayuki IKEDA
发明人： Daisuke KAWAE , Masami ENDO , Yoshiyuki KUROKAWA , Takayuki IKEDA
IPC分类号： H03K3/03
CPC分类号： H03K3/0315 , G06F1/04 , G06K19/07749 , H03K2005/00045 , H03K2005/00084
摘要： A semiconductor device includes an antenna circuit for receiving a wireless signal, a power supply circuit generating power by the wireless signal received by the antenna circuit, and a clock generation circuit to which power is supplied. The clock generation circuit includes a ring oscillator which self-oscillates and a frequency divider which adjusts frequency of an output signal of the ring oscillator in an appropriate range. A digital circuit portion is driven by a clock having high frequency accuracy, so that a malfunction such as an incorrect operation or no response is prevented.
摘要翻译：半导体器件包括用于接收无线信号的天线电路，通过由天线电路接收的无线信号产生电力的电源电路以及供给电力的时钟产生电路。时钟发生电路包括自振荡的环形振荡器和将环形振荡器的输出信号的频率调整到适当范围的分频器。数字电路部分由具有高频精度的时钟驱动，从而防止诸如错误操作或不响应的故障。

4. 发明申请

US20110248268A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US20110248268A1
公开(公告)日：2011-10-13
申请号：US13167762
申请日：2011-06-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

5. 发明申请

US20090218568A1 THIN FILM TRANSISOTR AND DISPLAY DEVICE 有权
标题翻译：薄膜透镜和显示器件
公开(公告)号：US20090218568A1
公开(公告)日：2009-09-03
申请号：US12391398
申请日：2009-02-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

6. 发明申请

US20110057725A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110057725A1
公开(公告)日：2011-03-10
申请号：US12943591
申请日：2010-11-10
申请人： Takayuki IKEDA , Yoshiyuki KUROKAWA , Masami ENDO
发明人： Takayuki IKEDA , Yoshiyuki KUROKAWA , Masami ENDO
IPC分类号： H03H11/24
CPC分类号： G06K19/07749 , G06F1/189 , G06F1/26
摘要： A semiconductor device such as an RFID, which can easily generate a given stable potential, is provided. Circuits included in a semiconductor device are categorized depending on whether a given stable power source potential is necessary. A power source potential generated from a wireless signal received by an antenna with the use of the antenna and a rectifier circuit is supplied to a circuit which needs a given stable power source potential through a regulator. On the other hand, a power source potential generated by the rectifier circuit is supplied to a circuit other than the circuit which needs the arbitrary power source potential. Thus, a semiconductor device including a regulator circuit easily designed with a smaller layout can be provided, and the semiconductor device can easily generate a given stable power source potential.
摘要翻译：提供了诸如RFID的半导体器件，其可以容易地产生给定的稳定电位。包括在半导体器件中的电路根据是否需要给定的稳定电源电位进行分类。由使用天线和整流电路由天线接收的无线信号产生的电源电位通过调节器提供给需要给定稳定电源电位的电路。另一方面，由整流电路产生的电源电位被供给到需要任意电源电位的电路以外的电路。因此，可以提供包括容易设计成具有较小布局的调节器电路的半导体器件，并且半导体器件可以容易地产生给定的稳定的电源电位。

7. 发明申请

US20120024965A1 SEMICONDUCTOR DEVICE AND IC LABEL, IC TAG, AND IC CARD PROVIDED WITH THE SEMICONDUCTOR DEVICE 有权
标题翻译：具有半导体器件的半导体器件和IC标签，IC标签和IC卡
公开(公告)号：US20120024965A1
公开(公告)日：2012-02-02
申请号：US13267936
申请日：2011-10-07
申请人： Daisuke KAWAE , Takayuki IKEDA , Munehiro KOZUMA
发明人： Daisuke KAWAE , Takayuki IKEDA , Munehiro KOZUMA
IPC分类号： G06K19/067
CPC分类号： G06K19/0723 , G06K19/0701 , H01Q1/2225 , H01Q1/248 , H02M3/07
摘要： A charge accumulation circuit having a structure in which a capacitor is divided into a plurality of pieces and the divided capacitors are connected in parallel through switches is provided. The charge accumulation circuit controls the switch provided between the capacitors and thus can dynamically vary electrostatic capacitance of the charge accumulation circuit which applies a voltage to a constant voltage circuit.
摘要翻译：提供一种电荷累积电路，其具有将电容器分成多个部分的结构，并且分开的电容器通过开关并联连接。电荷累积电路控制在电容器之间提供的开关，从而可以动态地改变向恒压电路施加电压的电荷累积电路的静电电容。

8. 发明申请

US20110204207A1 PHOTODETECTOR CIRCUIT 有权
标题翻译：光电二极管
公开(公告)号：US20110204207A1
公开(公告)日：2011-08-25
申请号：US13024391
申请日：2011-02-10
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA
IPC分类号： H01L27/146
CPC分类号： H01L31/0224 , H01L27/1443 , H01L27/14632 , H04N5/335 , H04N5/365
摘要： A photodetector circuit is provided that includes: a first wiring connected to an input terminal; a second wiring connected to an output terminal; and first and second photosensors each including a first terminal connected to the first wiring and a second terminal connected to the second wiring, wherein the first wiring and the second wiring are arranged in parallel, and the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, the first photosensor, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, the second photosensor, and the second wiring.
摘要翻译：提供一种光检测器电路，其包括：连接到输入端的第一布线; 连接到输出端子的第二布线; 以及第一和第二光电传感器，每个包括连接到第一布线的第一端子和连接到第二布线的第二端子，其中第一布线和第二布线并联布置，并且第一路径的电阻值之和输入端子经由第一布线输出到第一布线，第一光电传感器和第二布线与通过第一布线，第二光电传感器和第二布线的从输入端到输出端的第二路径的电阻值之和相等第二线。

9. 发明申请

US20110109592A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20110109592A1
公开(公告)日：2011-05-12
申请号：US12914656
申请日：2010-10-28
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Shunpei YAMAZAKI
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Shunpei YAMAZAKI
IPC分类号： G06F3/042
CPC分类号： G06F3/0421 , G02F1/13338 , G06F3/0412 , G06F3/0416 , G06F3/042 , G06F2203/04101 , H01L27/1225 , H01L27/14612 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14649 , H01L27/14678 , H01L29/7869
摘要： The display device has a display panel where a photosensor and a transistor including an oxide semiconductor layer are arranged. The display device detects a shadow of the object, which is projected on the display panel when the object approaches the display panel and blocks ambient light, with a photosensor, whereby a position or motion of the object is detected. Even when the object is not in contact with the display panel, the object can be detected.
摘要翻译：显示装置具有布置有光电传感器和包括氧化物半导体层的晶体管的显示面板。当物体接近显示面板并且用光电传感器阻挡环境光时，显示装置检测被投影在显示面板上的物体的阴影，由此检测物体的位置或运动。即使物体与显示面板不接触，也可以检测物体。

10. 发明申请

US20120146027A1 PHOTODETECTOR CIRCUIT, INPUT DEVICE, AND INPUT/OUTPUT DEVICE 有权
标题翻译：光电传感器电路，输入设备和输入/输出设备
公开(公告)号：US20120146027A1
公开(公告)日：2012-06-14
申请号：US13313539
申请日：2011-12-07
申请人： Hikaru TAMURA , Yoshiyuki KUROKAWA , Takayuki IKEDA
发明人： Hikaru TAMURA , Yoshiyuki KUROKAWA , Takayuki IKEDA
IPC分类号： H01L31/112 , H01L31/0376
CPC分类号： H01L27/14692
摘要： An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor.
摘要翻译：抑制寄生电容对光检测器电路的光数据输出的不良影响。光检测器电路包括光电转换元件; 第一场效应晶体管; 第二场效应晶体管; 用作第一场效应晶体管的栅极的第一导电层; 设置在所述第一导电层上的绝缘层; 半导体层与第一导电层重叠，绝缘层插入其间; 电连接到半导体层的第二导电层; 电连接到所述半导体层的第三导电层，所述第三导电层与所述半导体层相对，所述第一导电层的一对侧表面与包括所述第一导电层的至少一个导电层重叠，所述第一导电层的绝缘层位于所述半导体层之间，并且其作为源和第一场效应晶体管的漏极。

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