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1. 发明申请

US20110248268A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US20110248268A1
公开(公告)日：2011-10-13
申请号：US13167762
申请日：2011-06-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

2. 发明申请

US20090218568A1 THIN FILM TRANSISOTR AND DISPLAY DEVICE 有权
标题翻译：薄膜透镜和显示器件
公开(公告)号：US20090218568A1
公开(公告)日：2009-09-03
申请号：US12391398
申请日：2009-02-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

3. 发明申请

US20120132719A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120132719A1
公开(公告)日：2012-05-31
申请号：US13368380
申请日：2012-02-08
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE , Munehiro KOZUMA
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE , Munehiro KOZUMA
IPC分类号： G06K19/073
CPC分类号： G06K19/07749 , G06K7/0008 , G06K19/0716 , G06K2017/0045
摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.
摘要翻译：半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路由无线信号产生。这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

4. 发明申请

US20110261864A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110261864A1
公开(公告)日：2011-10-27
申请号：US13177583
申请日：2011-07-07
申请人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE
发明人： Yoshiyuki KUROKAWA , Takayuki IKEDA , Masami ENDO , Hiroki DEMBO , Daisuke KAWAE , Takayuki INOUE
IPC分类号： H04B1/56
CPC分类号： G06K19/07749
摘要： In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.
摘要翻译：在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从读取器/写入器到半导体器件。因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。半导体器件包括天线电路，发送电路，接收电路和运算处理电路。天线电路发送和接收无线电信号。发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

5. 发明申请

US20080002454A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 失效
标题翻译：半导体器件和电子器件
公开(公告)号：US20080002454A1
公开(公告)日：2008-01-03
申请号：US11762146
申请日：2007-06-13
申请人： Takayuki INOUE , Yoshiyuki KUROKAWA , Takayuki IKEDA
发明人： Takayuki INOUE , Yoshiyuki KUROKAWA , Takayuki IKEDA
IPC分类号： G11C11/40
CPC分类号： G11C7/12 , H01L21/84 , H01L27/112 , H01L27/12
摘要： In relation to reading of data in a memory, it is an object to provide a semiconductor device mounted with a low power consumption memory. A semiconductor device including a word line, a bit line, and a memory cell electrically connected to the word line and the bit line, further includes a precharge circuit for making the bit line have an electric potential for reading data stored in the memory cell. The precharge circuit is provided for each bit line and connected to the bit line. Further, the precharge circuit is capable of making each bit line have an electric potential for reading the data stored in the memory cell for each bit line.
摘要翻译：关于在存储器中读取数据，目的是提供一种安装有低功耗存储器的半导体器件。包括字线，位线和电连接到字线和位线的存储单元的半导体器件还包括用于使位线具有用于读取存储在存储单元中的数据的电位的预充电电路。为每个位线提供预充电电路并连接到位线。此外，预充电电路能够使每个位线具有用于读取存储在每个位线的存储单元中的数据的电位。

6. 发明申请

US20100258802A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100258802A1
公开(公告)日：2010-10-14
申请号：US12754393
申请日：2010-04-05
申请人： Hiromichi GODO , Takayuki INOUE
发明人： Hiromichi GODO , Takayuki INOUE
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： An object is to provide an n-channel transistor and a p-channel transistor having a preferred structure using an oxide semiconductor. A first source or drain electrode which is electrically connected to a first oxide semiconductor layer and is formed using a stacked-layer structure including a first conductive layer containing a first material and a second conductive layer containing a second material, and a second source or drain electrode which is electrically connected to a second oxide semiconductor layer and is formed using a stacked-layer structure including a third conductive layer containing the first material and a fourth conductive layer containing the second material are included. The first oxide semiconductor layer is in contact with the first conductive layer of the first source or drain electrode, and the second oxide semiconductor layer is in contact with the third and the fourth conductive layers of the second source or drain electrode.
摘要翻译：目的是提供使用氧化物半导体的具有优选结构的n沟道晶体管和p沟道晶体管。第一源极或漏极，其电连接到第一氧化物半导体层，并且使用包括包含第一材料的第一导电层和包含第二材料的第二导电层的堆叠层结构形成，以及第二源极或漏极电连接到第二氧化物半导体层并且使用包括包含第一材料的第三导电层和包含第二材料的第四导电层的层叠结构形成的电极。第一氧化物半导体层与第一源极或漏极的第一导电层接触，并且第二氧化物半导体层与第二源极或漏极的第三导电层和第四导电层接触。

7. 发明申请

US20120100309A1 PLASMA TREATMENT APPARATUS AND PLASMA CVD APPARATUS 审中-公开
标题翻译：等离子体处理装置和等离子体CVD装置
公开(公告)号：US20120100309A1
公开(公告)日：2012-04-26
申请号：US13273258
申请日：2011-10-14
申请人： Hidekazu MIYAIRI , Yoichiro NUMASAWA , Takayuki INOUE , Kojiro TAKAHASHI , Mitsuhiro ICHIJO
发明人： Hidekazu MIYAIRI , Yoichiro NUMASAWA , Takayuki INOUE , Kojiro TAKAHASHI , Mitsuhiro ICHIJO
IPC分类号： C23C16/50 , C23C16/52 , C23C16/455
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45574
摘要： A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode.
摘要翻译：等离子体处理装置包括被室壁覆盖的处理室，其中上电极面向下电极; 以及通过所述上部电极和所述处理室与所述室壁隔开并与所述分隔板和喷淋板之间的第一气体扩散室连接的管线室。第一气体扩散室与分散板和上部电极之间的第二气体扩散室连接。第二气体扩散室与上部电极中的第一气体管连接。上电极和室壁设置在同一轴线上。分散板包括没有气孔的中心部分和具有多个气孔的周边部分。中心部分面向与上电极的电极平面连接的第一气体管的气体导入口。

8. 发明申请

US20120120742A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120120742A1
公开(公告)日：2012-05-17
申请号：US13359534
申请日：2012-01-27
申请人： Takayuki INOUE , Yoshiyuki KUROKAWA
发明人： Takayuki INOUE , Yoshiyuki KUROKAWA
IPC分类号： G11C7/10 , G11C7/00
CPC分类号： G11C5/141 , G11C5/142 , G11C29/70
摘要： An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.
摘要翻译：目的是提供一种具有存储器的半导体器件，其可以通过采用有利于使用备用存储单元的结构来有效地提高产量。半导体器件包括具有存储单元和备用存储单元的存储单元阵列，连接到存储单元和备用存储单元的解码器，连接到解码器的数据保持电路以及向数据提供电力的电池保持电路。备用存储单元根据数据保持电路的输出进行工作。

9. 发明申请

US20100302887A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100302887A1
公开(公告)日：2010-12-02
申请号：US12850736
申请日：2010-08-05
申请人： Takayuki INOUE , Yoshiyuki KUROKAWA
发明人： Takayuki INOUE , Yoshiyuki KUROKAWA
IPC分类号： G11C29/04
CPC分类号： G11C5/141 , G11C5/142 , G11C29/70
摘要： An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.
摘要翻译：目的是提供一种具有存储器的半导体器件，其可以通过采用有利于使用备用存储单元的结构来有效地提高产量。半导体器件包括具有存储单元和备用存储单元的存储单元阵列，连接到存储单元和备用存储单元的解码器，连接到解码器的数据保持电路以及向数据提供电力的电池保持电路。备用存储单元根据数据保持电路的输出进行工作。

10. 发明申请

US20130215464A1 IMAGE FORMING APPARATUS, SYSTEM, AND METHOD 审中-公开
标题翻译：图像形成装置，系统和方法
公开(公告)号：US20130215464A1
公开(公告)日：2013-08-22
申请号：US13761223
申请日：2013-02-07
申请人： Naohiko KUBO , Takayuki INOUE , Kohji YAMAMOTO , Yuka SAITO , Tomoyuki TAKAHIRA
发明人： Naohiko KUBO , Takayuki INOUE , Kohji YAMAMOTO , Yuka SAITO , Tomoyuki TAKAHIRA
IPC分类号： G06K15/00
CPC分类号： G06K15/40 , G06F3/1207 , G06F3/1219 , G06F3/1256 , G06F3/1286 , G06K15/1806 , G06K15/4005
摘要： In an image forming system, after receiving print data, print setting data, and a command to display a preview from an information processing apparatus, an image drawing unit in an image forming apparatus generates a preview image that reflects the print setting data from the print data and send it to the information processing apparatus. After receiving the print data, the print setting data, and the command to start printing from the information processing apparatus, the image drawing unit generates drawing data that reflects the print setting data from the print data, and an engine unit prints out an image on paper.
摘要翻译：在图像形成系统中，在从信息处理设备接收到打印数据，打印设置数据和显示预览的命令之后，图像形成设备中的图像绘制单元生成从打印机反映打印设置数据的预览图像数据并将其发送到信息处理设备。在从信息处理装置接收到打印数据，打印设置数据和开始打印的命令之后，图像绘制单元从打印数据生成反映打印设置数据的绘制数据，并且引擎单元打印出图像纸。

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